Fabrication of a WS2/p-Si Heterostructure Photocathode Using Direct Hybrid Thermolysis

Pseudocapacitance-Induced Synaptic Plasticity of Tribo-Phototronic Effect Between Ionic Liquid and 2D MoS2

Contact-induced electrification, commonly referred to as triboelectrification, is the subject of extensive investigation at liquid-solid interfaces due to its wide range of applications in electrochemistry, energy harvesting, and sensors. This study examines the triboelectric between an ionic liquid and 2D MoS2 under light illumination. Notably, when a liquid droplet slides across the MoS2 surface, an increase in the generated current and voltage is observed in the forward direction, while a decrease is observed in the reverse direction. This suggests a memory-like tribo-phototronic effect between ionic liquid and 2D MoS2 . The underlying mechanism behind this tribo-phototronic synaptic plasticity is proposed to be ion adsorption/desorption processes resulting from pseudocapacitive deionization/ionization at the liquid-MoS2  interface. This explanation is supported by the equivalent electrical circuit modeling, contact angle measurements, and electronic band diagrams. Furthermore, the influence of various factors such as velocity, step size, light wavelength and intensity, ion concentration, and bias voltage is thoroughly investigated. The artificial synaptic plasticity arising from this phenomenon exhibits significant synaptic features, including potentiation/inhibition, paired-pulse facilitation/depression, and short-term memory (STM) to long-term memory (LTM) transition. This research opens up promising avenues for the development of synaptic memory systems and intelligent sensing applications based on liquid-solid interfaces.

Catalytic hydrolysis of sodium borohydride for hydrogen production using phosphorylated silica particles

Hydrolysis of sodium borohydride (NaBH₄) offers substantial applications in the production of hydrogen but requires an inexpensive catalyst. Herein, silica (SP) and phosphorylated silica (SP-PA) are used as a catalyst for the generation of hydrogen from NaBH₄ hydrolysis. The catalyst is prepared by sol-gel route synthesis by taking tetraethyl orthosilicate as the precursor of silica whereas phosphoric acid served as the gelation and phosphorylating agent. The prepared catalyst is characterized by FT-IR spectroscopy, XRD, SEM, and EDAX. The hydrogen generation rate at SP-PA particles (762.4 mL min^-1 g^-1) is higher than that of silica particles (133 mL min^-1 g^-1 of catalyst). The higher catalytic activity of SP-PA particles might be due to the acidic functionalities that enhance the hydrogen production rate. The kinetic parameters (activation energy and pre-exponential factor) are calculated from the Arrhenius plot and the thermodynamic parameters (enthalpy, entropy, and free energy change) are evaluated using the Erying plot. The calculated activation energy for NaBH₄ hydrolysis at SP-PA catalyst is 29.92 kJ.mol^-1 suggesting the high catalytic activity of SP-PA particles. The obtained entropy of activation (ΔS‡ =  - 97.75 JK^-1) suggested the Langmuir-Hinshelwood type associative mechanism for the hydrolysis of NaBH₄ at SP-PA particles.

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction

As a new class of two-dimensional (2D) materials and a group-VI chalcogen, tellurium (Te) has emerged as a p-type semiconductor with high carrier mobility. Potential applications include high-speed opto-electronic devices for communication. One method to enhance the performance of 2D material-based photodetectors is by integration with a IV group of semiconductors such as silicon (Si). In this work, we demonstrate a self-powered, high-speed, broadband photodetector based on the 2D Te/n-type Si heterojunction. The fabricated Te/n-type Si heterojunction exhibits high performance in the UV-vis-NIR light with a high responsivity of up to ∼250 mA/W and a photocurrent-to-dark current ratio (I _on/I _off) of ∼10⁶, fast response time of 8.6 μs, and superior repeatability and stability. The results show that the fabricated Te/n-type Si heterojunction photodetector has a strong potential to be utilized in ultrafast, broadband, and efficient photodetection applications.

Improved hydrogen evolution with SnS2 quantum dot-incorporated black Si photocathode

Black silicon (bSi), possessing appealing light-trapping properties and large specific surface area, ranks high among many other photocathode materials. However, the insufficient dynamics towards HER seriously bother black Si. Herein, a novel photoelectrode with ultrasmall size tin sulfide quantum dot (SnS₂ QD) incorporated black silicon was employed. Nanosized SnS₂ possesses numerous active sites for electrochemical reactions. Impressively, benefiting from SnS₂ QDs, the downward band bending of the Si Fermi level at the interface of electrolyte becomes higher, which remarkably suppresses the recombination of photo-generated carriers, thereby facilitating the participation of photo-generated electrons in PEC-HER. As a result, the thus-designed SnS₂/bSi reveals an exceptional PEC-HER activity with a positive onset potential of 0.235 V vs. reversible hydrogen electrode (RHE), a high photocurrent of 1.23 mA cm^-2 at 0 V vs. RHE, and long-term stability. Besides, the saturated photocurrent of ∼41 mA cm^-2 is achieved at about -0.51 V vs. RHE.

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications

Recently, atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted great interest in electronic and opto-electronic devices for high-integration-density applications such as data storage due to their small vertical dimension and high data storage capability. Here, we report a memristor based on free-standing multilayer molybdenum disulfide (MoS₂) with a high current on/off ratio of ∼10³ and a stable retention for at least 3000 s. Through light modulation of the carrier density in the suspended MoS₂ channel, the on/off ratio can be further increased to ∼10⁵. Moreover, the essential photosynaptic functions with short- and long-term memory (STM and LTM) behaviors are successfully mimicked by such devices. These results also indicate that STM can be transferred to LTM by increasing the light stimuli power, pulse duration, and number of pulses. The electrical measurements performed under vacuum and ambient air conditions propose that the observed resistive switching is due to adsorbed oxygen and water molecules on both sides of the MoS₂ channel. Thus, our free-standing 2D multilayer MoS₂-based memristors propose a simple approach for fabrication of a low-power-consumption and reliable resistive switching device for neuromorphic applications.

Coating of Phosphide Catalysts on p-Silicon by a Necking Strategy for Improved Photoelectrochemical Characteristics in Alkaline Media

The methodology of coating electrocatalysts on semiconductor substrates is critical for the catalytic performance of photoelectrochemical electrodes. A weakly bound coating leads to orders of magnitude lower efficiency and reliability compared to those required to meet the commercial demand. Herein, a facile strategy based on the hydrolysis of TiCl₄ is developed to solve the coating issue. Mesoporous tungsten phosphide (WP) particles were spin-coated and affixed onto TiO₂-protected planar p-Si by the formation of a TiO₂ necking layer between the catalyst particles and the substrates. Under 1 sun illumination, the as-prepared WP/TiO₂/Si photocathode yields a saturated current density of -35 mA cm^-2 and a durability of over 110 h with a current density over -15 mA cm^-2 at 0 V versus a reversible hydrogen electrode in a 1.0 M KOH solution, which is among the state-of-the-art performances of commercial planar Si-based photocathodes. The Kelvin probe force microscopy results suggest the successive transfer of photoelectrons from Si to TiO₂ and WP. The as-formed TiO₂ necking layer plays the key role in ensuring the surface catalytic activity and durability. This necking strategy is also applicable for coating other transition-metal phosphides, for example, MoP and FeP, thus offering a practical approach to meet the commercial requirement of low-cost, highly efficient, and durable photoelectrodes.

Boosting Solar Hydrogen Production of Molybdenum Tungsten Sulfide-Modified Si Micropyramids by Introducing Phosphate

Si is regarded as a promising photocathode material for solar hydrogen evolution reaction (HER) because of its small band gap and highly negative conduction band edge. However, bare Si electrodes have high overpotential because of sluggish HER kinetics on the surface. In this study, molybdenum tungsten sulfide (MoS₂-WS₂) was decorated on Si photocathodes as the co-catalyst to accelerate HER kinetics. The catalytic performance of MoS₂-WS₂ was further enhanced by introducing phosphate materials. Phosphate-modified molybdenum tungsten sulfide (PO-MoWS) was deposited on Si photoabsorbers to provide an optimal current of -15.0 mA cm^-2 at 0 V. Joint characterizations of X-ray photoelectron and X-ray absorption spectroscopies demonstrated that the phosphate material dominantly coordinated with the WS₂ component in PO-MoWS. Moreover, this phosphate material induced a large number of sulfur vacancies in the PO-MoWS/Si electrodes that contributed to the ideal catalytic activity. Herein, TiO₂ thin films were prepared as the protective layer to improve the stability of photocathodes. The PO-MoWS/2 nm TiO₂/Si electrode maintained 83.8% of the initial photocurrent after chronoamperometric measurement was performed for 8000 s.

Surface Plasmon-Enhanced Carbon Dot-Embellished Multifaceted Si(111) Nanoheterostructure for Photoelectrochemical Water Splitting

Because of the excellent electronic properties, Si is a well-established semiconducting material for PV technology. However, slow kinetics and a fast corroding nature make Si inefficient for the hydrogen evolution reaction (HER) in photoelectrochemical (PEC) applications. Herein, we demonstrate a multifacet Si nanowire (SiNW) decorated with surface plasmon-enhanced carbon quantum dots (AuCQDs) as efficient, stable, economical, and scalable photocathodes (PCs) for HER. The PEC performance of SiNW_AuCQDs has more than a fourfold efficiency enhancement than the pristine SiNW, which we have attributed to the combined effect of enhanced solar absorption and efficient carrier transport. The optimized PC SiNW_AuCQDs results in the highest photocurrent ∼1.7 mA/cm², an applied bias photon-to-current conversion efficiency of ∼0.8%, and H₂ gas evolution rate of ∼182.93 μmol·h^-1. Furthermore, these SiNW_AuCQDs PCs provide extraordinary stability under continuous operating conditions with 1 sun illumination (100 mW/cm²). The process-line compatible fabrication process of these PCs will open a new direction at the wafer-level designing of a heterostructure for large-scale solar-fuel conversion.

Novel Architecture Titanium Carbide (Ti3C2Tx) MXene Cocatalysts toward Photocatalytic Hydrogen Production: A Mini-Review

Low dimensional transition metal carbide and nitride (MXenes) have been emerging as frontier materials for energy storage and conversion. Ti3C2Tx was the first MXenes that discovered and soon become the most widely investigated among the MXenes family. Interestingly, Ti3C2Tx exhibits ultrahigh catalytic activity towards the hydrogen evolution reaction. In addition, Ti3C2Tx is electronically conductive, and its optical bandgap is tunable in the visible region, making it become one of the most promising candidates for the photocatalytic hydrogen evolution reaction (HER). In this review, we provide comprehensive strategies for the utilization of Ti3C2Tx as a catalyst for improving solar-driven HER, including surface functional groups engineering, structural modification, and cocatalyst coupling. In addition, the reaming obstacle for using these materials in a practical system is evaluated. Finally, the direction for the future development of these materials featuring high photocatalytic activity toward HER is discussed.