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Li M, Lu C, Gao L, Zhu M, Lyu X, Wang Y, Liu J, Wang L, Liu P, Song J, Tao H, Wang Q, Ji A, Li P, Cao Z, Lu N. Ultrasensitive Self-Powered Flexible Crystalline β-Ga 2O 3-Based Photodetector Obtained through Lattice Symmetry and Band Alignment Engineering. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42406-42414. [PMID: 39078147 DOI: 10.1021/acsami.4c05643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
Due to its portable and self-powered characteristics, the construction of Ga2O3-based semiconductor flexible devices that can improve the adaptability in various complex environments have drawn great attention in recent decades. However, conventional Ga2O3-based flexible heterojunctions are based on either amorphous or poor crystalline Ga2O3 materials, which severely limit the performance of the corresponding devices. Here, through lattice-symmetry and energy-band alignment engineering, we construct a high-quality crystalline flexible NiO/β-Ga2O3 p-n self-powered photodetector. Owing to its suitable energy-band alignment structure, the device shows a high photo-to-dark current ratio (1.71 × 105) and a large detection sensitivity (6.36 × 1014 Jones) under zero bias, which is superior than most Ga2O3 self-powered photodetectors even for those based on rigid substrates. Moreover, the fabricated photodetectors further show excellent mechanical stability and robustness in bending conditions, demonstrating their potential practical applications in flexible optoelectronic devices. These findings provide insights into the manipulation of crystal lattice and energy band engineering in flexible self-powered photodetectors and also offer guideline for designing other Ga2O3-based flexible electronic devices.
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Affiliation(s)
- Mengcheng Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chao Lu
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiangyu Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Yuqian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jin Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Pengyu Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiayi Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Huayu Tao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Qiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ailing Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Peigang Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Zexian Cao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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2
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Zhang Y, Qin Z, Gao H, Wang T, Gao C, Zhang X, Hu W, Dong H. Highly-Polarized Solar-Blind Ultraviolet Organic Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404309. [PMID: 38837485 DOI: 10.1002/adma.202404309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Revised: 05/28/2024] [Indexed: 06/07/2024]
Abstract
Developing high-performance polarization-sensitive ultraviolet photodetectors is crucial for their application in military remote sensing, detection, bio-inspired navigation, and machine vision. However, the significant absorption in the visible light range severely limits the application of polarization-sensitive ultraviolet photodetectors, such as high-quality anti-interference imaging. Here, based on a wide-bandgap organic semiconductor single crystal (trans-1,2-bis(5-phenyldithieno[2,3-b:3',2'-d]thiophen-2-yl)ethene, BPTTE), high-performance polarization-sensitive solar-blind ultraviolet photodetectors with a dichroic ratio close to 4.26 are demonstrated. The strong anisotropy of 2D grown BPTTE single crystals in molecular vibration and optical absorption is characterized by various techniques. Under voltage modulation, stable and efficient detection of polarized light is demonstrated, attributed to the intrinsic anisotropy of transition dipole moment in the bc crystal plane, rather than other factors. Finally, high-contrast polarimetric imaging and anti-interference imaging are successfully demonstrated based on BPTTE single crystal photodetectors, highlighting the potential of organic semiconductors for polarization-sensitive solar-blind ultraviolet photodetectors.
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Affiliation(s)
- Yu Zhang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhengsheng Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haikuo Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- College of Aeronautical Engineering, Shandong University of Aeronautics, Binzhou, 256600, China
| | - Tianyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Can Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiaotao Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou, 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
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3
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Li B, Dong Z, Xu W, Li G, Yang X, Feng S, Feng W, Lu W. Synthesis of InAl-alloyed Ga 2O 3 nanowires for self-powered ultraviolet detectors by a CVD method. RSC Adv 2024; 14:22847-22857. [PMID: 39035720 PMCID: PMC11258963 DOI: 10.1039/d4ra04176c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2024] [Accepted: 07/13/2024] [Indexed: 07/23/2024] Open
Abstract
Ga2O3 is a kind of wide-band gap semiconductor, which has great potential in deep ultraviolet detection because of its high efficiency and fast response. Doping can improve the photoelectric properties of Ga2O3 materials. In this paper, In and Al elements alloyed Ga2O3 nanowires (InAl-Ga2O3 NWs) were successfully grown on p-GaN using a cost-effective chemical vapor deposition method and a vertical structure. The GaN/InAl-Ga2O3 NWs p-n self-powered wide-gap UV photodetector (PD) was constructed based on sputtered gold film as the bottom and top electrodes, and spin coated with polymethyl methacrylate as the insulating layer in the vertical direction. The GaN/InAl-Ga2O3 UV PD exhibits excellent performances, including an extremely low dark current of 0.015 nA, a maximum photocurrent of about 16 nA at zero-bias voltage under 265 nm illumination, and a light-to-dark current ratio greater than 103. The responsivity is 0.94 mA W-1, the specific detectivity is 9.63 × 109 jones, and the good fast response/attenuation time is 31.2/69.6 ms. The self-powered characteristics are derived from the internal electric field formed between p-type GaN and n-type InAl-Ga2O3 NWs, which is conducive to the rapid separation and transfer of photogenerated carriers. This work provides an innovative mechanism of high-performance metal oxide nanowires for the application of p-n junction photodetectors, which can operate without any external bias.
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Affiliation(s)
- Bei Li
- School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices Chongqing 400054 P. R. China
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences Chongqing 400714 China
| | - Zhiyu Dong
- School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices Chongqing 400054 P. R. China
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences Chongqing 400714 China
| | - Wei Xu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences Chongqing 400714 China
| | - Guowei Li
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences Chongqing 400714 China
| | - Xiaozhan Yang
- School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices Chongqing 400054 P. R. China
| | - Shuanglong Feng
- School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices Chongqing 400054 P. R. China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing Key Laboratory of New Energy Storage Materials and Devices Chongqing 400054 P. R. China
| | - Wenqiang Lu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Multiscale Manufacturing Technology Lab, Chongqing School, University of Chinese Academy of Sciences Chongqing 400714 China
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Wen J, Wang Y, Zhang B, Chen R, Zhu H, Han X, Xiao H. High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga 2O 3 Single-Crystal Layer. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1165. [PMID: 38998770 PMCID: PMC11243192 DOI: 10.3390/nano14131165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2024] [Revised: 07/05/2024] [Accepted: 07/06/2024] [Indexed: 07/14/2024]
Abstract
The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. In this study, we present three types of UV PDs based on an unetched GaN, NP-GaN distributed Bragg reflector (DBR), and NP-GaN-DBR with a Ga2O3 single-crystal film (Ga2O3/NP-GaN-DBR). The unetched GaN PD does not exhibit a significant photoresponse. Compared to the NP-GaN-DBR PD device, the Ga2O3/NP-GaN-DBR PD demonstrates a larger light-dark current ratio (6.14 × 103) and higher specific detectivity (8.9 × 1010 Jones) under 365 nm at 5 V bias due to its lower dark current (3.0 × 10-10 A). This reduction in the dark current can be attributed to the insertion of the insulating Ga2O3 between the metal and the NP-GaN-DBR, which provides a thicker barrier thickness and higher barrier height. Additionally, the Ga2O3/NP-GaN-DBR PD device exhibits shorter rise/decay times (0.33/0.23 s) than the NP-GaN-DBR PD, indicating that the growth of a Ga2O3 layer on the DBR effectively reduces the trap density within the NP-GaN DBR structure. Although the device with a Ga2O3 layer presents low photoresponsivity (0.1 A/W), it should be feasible to use Ga2O3 as a dielectric layer based on the above-mentioned reasons.
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Affiliation(s)
- Junjie Wen
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Yuankang Wang
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Biao Zhang
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Rongrong Chen
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Hongyan Zhu
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Xinyu Han
- School of Integrated Circuits, Shandong University, Jinan 250100, China
| | - Hongdi Xiao
- School of Integrated Circuits, Shandong University, Jinan 250100, China
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5
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Cai Z, He X, Wang K, Hou X, Mei Y, Ying L, Zhang B, Long H. Enhancing Performance of GaN/Ga 2O 3 P-N Junction Uvc Photodetectors via Interdigitated Structure. SMALL METHODS 2024; 8:e2301148. [PMID: 38072623 DOI: 10.1002/smtd.202301148] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/01/2023] [Indexed: 07/21/2024]
Abstract
Ga2O3-based Ultraviolet-C photodetector (UVCPD) is considered the most promising UVCPD at present and is divided into Metal-Semiconductor-Metal (MSM) and PN junction types. Compared with MSM-PDs, PN-PDs exhibit superior transient performance due to the built-in electric field. However, current Ga2O3-based PN-PDs lack consideration for carrier collection and electric field distribution. In this study, PN-PDs with an interdigital n-Ga2O3 layer and finger electrodes are fabricated on p-GaN/n-Ga2O3 epilayers. Ultrafast response times of 31 µs (1/e decay) and 2.76 µs (fast component) are realized, which outperforms all Ga2O3 UVC-PDs up to now. Under 0 V self-powered, the responsivity (0.25 A W-1) of interdigital PD is enhanced by the interdigital electrode structure due to increasing carriers' collection length. Under bias, the performances of interdigital PD with 41.7 A W-1 responsivity and 8243 selection ratios are significantly elevated by enhancing the built-in electric field in the Ga2O3 region, which is 34.76 and 39.4 times those of traditional PDs, respectively. The intrinsic enhancing mechanism of interdigital structure is also investigated by interdigital PDs with various electrode spacings and perimeters. In summary, this paper not only reports a highly performed interdigitated structure p-GaN/n-Ga2O3 UVCPDs, but also provides guidelines for structure design in Ga2O3-based PN-PDs.
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Affiliation(s)
- Ziling Cai
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Xiyao He
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Kaikai Wang
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Xin Hou
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Yang Mei
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Leiying Ying
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Baoping Zhang
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
| | - Hao Long
- School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen, Fujian, 361005, China
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Kumar M, Park H, Seo H. Transformative Multifunction Deep Ultraviolet Photodetectors for On-Demand Applications: From Fast Optical Communication to Tunable In-Sensor Photocurrent Integration. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27550-27559. [PMID: 38764368 DOI: 10.1021/acsami.4c04421] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2024]
Abstract
The strategic utilization of photodetectors' transient response could open new frontiers from free-space optical communication to the emerging field of neuromorphic optoelectronics. Contrarily, while communication requires a fast response, neuromorphic applications benefit from a slow and integrative transient photocurrent. By integrating these functionalities in a single device, this study unveils a photodetector with tunable responses, bridging the gap between optical communication and neuromorphic sensing and creating a versatile platform with on-demand applications. Particularly, a Ga2O3-based photodetector was designed, exhibiting a photocurrent on/off ratio close to 104, high responsivity of 0.43 A/W, and detectivity 1.22 × 1013 Jones under deep ultraviolet illumination (λ ∼ 260 nm). The photodetector demonstrates transient time-dependent on operational voltage, ranging from 10-4 to 0.2 s. The underlying mechanism is attributed to the voltage-dependent balance between photocarrier generation and defect-related recombination, as revealed by electrostatic force microscopy. Additionally, we have demonstrated potential applications, including digital Morse code interpretation, tunable integration of optical inputs within the sensor, one-time readouts, and effective analog Morse code reading. Furthermore, the effectiveness of input information recognition using analog integration, even with anomalies, was demonstrated. This work establishes a versatile approach for tunable in-sensor optical processing, potentially useful for a wide range of applications, from free-space optical communication to neuromorphic sensing.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Hayoung Park
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea
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7
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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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8
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Feng G, Li S, Tian Y, Qi S, Guo D, Tang W. 2 in. Bulk β-Ga 2O 3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality. ACS OMEGA 2024; 9:22084-22089. [PMID: 38799343 PMCID: PMC11112554 DOI: 10.1021/acsomega.4c00405] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Revised: 04/06/2024] [Accepted: 04/11/2024] [Indexed: 05/29/2024]
Abstract
2 in. bulk β-Ga2O3 single crystals are successfully grown by the edge-defined film-fed growth method with a homemade furnace system. By considering the significance of wafer quality in future mass manufacture, a nine-point characterization method is developed to evaluate the full-scale quality of the processed 2 in. (100)-orientated β-Ga2O3 single-crystal wafers. Crystalline and structural characteristics were evaluated using X-ray diffraction and Raman spectroscopy, revealing decent crystalline quality with a mean full width at half-maximum value of 60.8 arcsec and homogeneous bonding structures. The statistical root-mean-square surface roughness, determined from nine scanning areas, was found to be only 0.196 nm, indicating superior surface quality. Linear optical properties and defect levels were further investigated using UV-visible spectrophotometry and photoluminescence spectroscopy. The high wafer-scale quality of the processed β-Ga2O3 wafers meets the requirements for homoepitaxial growth substrates in electronic and photonic devices with vertical configurations.
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Affiliation(s)
- Ganrong Feng
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Shan Li
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Yawen Tian
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Song Qi
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
| | - Daoyou Guo
- Center
for Optoelectronics Materials and Devices & Key Laboratory of
Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Weihua Tang
- College
of Integrated Circuit Science and Engineering & National and Local
Joint Engineering Laboratory for RF Integration and Micro-Packing
Technologies, Nanjing University of Posts
and Telecommunications, Nanjing 210023, China
- Beijing
GAO Semiconductor Co. Ltd., Beijing 101407, China
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9
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Ding S, Chen K, Xiu X, Shao P, Xie Z, Tao T, Liu B, Chen P, Chen D, Zhang R, Zheng Y. β-Ga 2O 3nanotube arrays for high-performance self-powered ultraviolet photoelectrochemical photodetectors. NANOTECHNOLOGY 2024; 35:175205. [PMID: 38271740 DOI: 10.1088/1361-6528/ad22a6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 01/25/2024] [Indexed: 01/27/2024]
Abstract
Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically alignedβ-Ga2O3nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area ofβ-Ga2O3NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA W-1(32.04 mA W-1) and a high detectivity of 1.58 × 1011Jones (1.01 × 1011Jones) were achieved for theβ-Ga2O3NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.
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Affiliation(s)
- Shan Ding
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Kai Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Xiangqian Xiu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Pengfei Shao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Peng Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, People's Republic of China
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10
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Zhang Y, Liu S, Xu R, Ruan S, Liu C, Ma Y, Li X, Chen Y, Zhou J. Solar-blind ultraviolet photodetector based on Nb 2C/ β-Ga 2O 3heterojunction. NANOTECHNOLOGY 2024; 35:165502. [PMID: 38150735 DOI: 10.1088/1361-6528/ad18e7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/27/2023] [Indexed: 12/29/2023]
Abstract
β-Ga2O3has been widely investigated for its stability and thermochemical properties. However, the preparation ofβ-Ga2O3thin films requires complex growth techniques and high growth temperatures, and this has hindered the application ofβ-Ga2O3thin films. In this study,β-Ga2O3thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based onβ-Ga2O3with a photocurrent of 2.54 × 10-6A and a dark current of 1.19 × 10-8A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W-1) and good stability. Thus, the Nb2C/β-Ga2O3heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.
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Affiliation(s)
- Yongfeng Zhang
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Shuainan Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Ruiliang Xu
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Shengping Ruan
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Caixia Liu
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yan Ma
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Xin Li
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
| | - Yu Chen
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Jingran Zhou
- College of Electronic Science & Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, People's Republic of China
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11
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Huang M, Wang Y, Yang L, Ren S, Wang L, Kang Y, Zhang N. The enhanced responsivity and response speed of SnO 2 visible-blind transparent photodetectors via the SiO 2 passivation layer. Dalton Trans 2024. [PMID: 38259030 DOI: 10.1039/d3dt03920j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Recently, transparent ultraviolet (UV) photodetectors have gained wide attention for their giant potential in integrated transparent electronics applications. SnO2 films as a common candidate for visible-blind transparent ultraviolet photodetectors have attracted increasing attention. In this work, high-performance visible-blind transparent UV photodetectors based on SnO2 thin film and a SiO2 passivation layer were successfully synthesized by the sol-gel spin coating method for the first time. The obtained SnO2/SiO2 hybrid device has a transmittance of nearly 80% in the visible band at 400-700 nm and demonstrates a high responsivity of 769 mA W-1 and a detection sensitivity of 1.24 × 1014 Jones under UV light illumination. The UV-C/UV-A rejection ratio is greater than 106, indicating that the device has good photo-selectivity. In addition, after the introdution of the SiO2 layer, the response speed is 2 times higher than that of pure SnO2. The presence of the SiO2 layer reduces the exposed area of SnO2, passivates the oxygen vacancies on the surface of SnO2 and inhibits the surface chemical adsorption. The above results provide a new perspective for improving the performance of SnO2 thin film for visible-blind transparent ultraviolet photodetectors.
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Affiliation(s)
- Mingkun Huang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
| | - Yue Wang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
| | - Lei Yang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
| | - Sen Ren
- Laboratory of Thin Film Techniques and Optical Test, Xi'an Technological University, Xi'an 710032, China
| | - Le Wang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
| | - Yuanhao Kang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
| | - Niumiao Zhang
- Institute of Photonics & Photon-Technology and School of Physics, Northwest University, Xi'an 710069, China.
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12
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Guo J, Ye B, Gu Y, Liu Y, Yang X, Xie F, Zhang X, Qian W, Zhang X, Lu N, Yang G. Broadband Photodetector for Ultraviolet to Visible Wavelengths Based on the BA 2PbI 4/GaN Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56014-56021. [PMID: 37994881 DOI: 10.1021/acsami.3c13114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
Two-dimensional (2D) organic-inorganic hybrid perovskites (OIPs) have exhibited ideal prospects for perovskite photodetectors (PDs) owing to their remarkable environmental stability, tunable band gap, and structural diversity. However, most perovskites face the great challenge of a narrow spectral response. Integrating 2D OIPs with a suitable wide band gap semiconductor gives opportunities to broaden the response spectra. Here, a photodetector based on the BA2PbI4/GaN heterostructure with a broadband photoresponse covering from the ultraviolet (UV) to visible band is designed. We demonstrate that the device is capable of detecting in the UV region by p-GaN being integrated with BA2PbI4. The morphology and material optical properties of BA2PbI4 are characterized by transmission electron microscopy (TEM) and photoluminescence (PL). Additionally, the current-voltage (I-V) characteristics and photoresponses of the BA2PbI4/GaN heterojunction photodetector are investigated. The response spectrum of the photodetector is broadened from the visible to UV region, exhibiting good rectifying behavior in the dark conditions and a broadband photoresponse from the UV to the visible region. Additionally, the energy band is used to analyze the current mechanism of the BA2PbI4/GaN heterojunction PD. This study is expected to provide a new insight of optoelectronic devices by integrating 2D OIPs such as BA2PbI4 and wide-band-gap semiconductors such as GaN to broaden the response spectra.
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Affiliation(s)
- Jiarui Guo
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Bingjie Ye
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Yan Gu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Yushen Liu
- Yancheng Polytechnic college, Yancheng 224005, China
| | - Xifeng Yang
- School of Electronic and Information Engineering, Suzhou Key Laboratory of Advanced Lighting and Display Technologies, Changshu Institute of Technology, Changshu 215556, China
| | - Feng Xie
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230039, China
| | - Xiumei Zhang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Weiying Qian
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Xiangyang Zhang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Naiyan Lu
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China
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13
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Ye L, Zhou S, Xiong Y, Tang J, Wang X, Li X, Pang D, Li H, Zhang H, Ye L, Cui Y, Li W. Self-powered Pt/a-Ga 2O 3/ITO vertical Schottky junction solar-blind photodetector with excellent detection performance. OPTICS EXPRESS 2023; 31:28200-28211. [PMID: 37710880 DOI: 10.1364/oe.494216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 07/27/2023] [Indexed: 09/16/2023]
Abstract
Self-powered solar-blind photodetectors (PDs) are promising for military and civilian applications owing to convenient operation, easy preparation, and weak-light sensitivity. In the present study, the solar-blind deep-ultraviolet (DUV) photodetector based on amorphous Ga2O3 (a-Ga2O3) and with a simple vertical stack structure is proposed by applying the low-cost magnetron sputtering technology. By tuning the thickness of the amorphous Ga2O3 layer, the device exhibits excellent detection performance. Under 3 V reverse bias, the photodetector achieves a high responsivity of 671A/W, a high detectivity of 2.21 × 1015 Jones, and a fast response time of 27/11 ms. More extraordinary, with the help of the built-in electric field at the interface, the device achieves an excellent performance in detection when self-powered, with an ultrahigh responsivity of 3.69 A/W and a fast response time of 2.6/6.6 ms under 254 nm light illumination. These results demonstrate its superior performance to most of the self-powered Schottky junction UV photodetectors reported to date. Finally, the Pt/a-Ga2O3/ITO Schottky junction photodiode detector is verified as a good performer in imaging, indicating its applicability in such fields as artificial intelligence, machine vision, and solar-blind imaging.
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14
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Huang S, Lin J, Lin X, Wang Z, Xie Y, Chen X, Kong X, Zheng W, Hu Q. Application of Graphene-Combined Rare-Earth Oxide (Sm 2O 3) in Solar-Blind Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37649-37657. [PMID: 37490695 DOI: 10.1021/acsami.3c06695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Rare-earth oxide Sm2O3 is theoretically expected to be used in the preparation of ultraviolet (UV) detectors with low dark currents and high radiation resistance due to its characteristics of a wide bandgap, a high dielectric constant, and high chemical stability. However, certain features that rare-earth oxides possess, such as high resistivity and weak photoelectric response currents, have hindered relevant research on these kinds of materials in the field of UV detection. In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time. Because of the high mobility of graphene (Gr) and the contribution of double built-in electric fields in the heterojunction, the collection efficiency of photogenerated carriers has been greatly improved, with the typical shortcomings of high resistivity and poor photoelectric response performance of rare-earth oxides having been overcome. This detector has exhibited outstanding performance at 0 V, including a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. Additionally, this detector has a detectivity as high as 1.2 × 1011 jones, which is at the front position of most ultraviolet detectors. The fabrication of this high-performance Sm2O3-based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors. Therefore, this project has important value for future research in relevant fields.
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Affiliation(s)
- Shiya Huang
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Jun Lin
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Xiuyu Lin
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Zhao Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Yuanyu Xie
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Xiong Chen
- Organic Optoelectronics Engineering Research Center of Fujian's Universities, Fujian Jiangxia University, Fuzhou, Fujian 350002, China
| | - Xiangzeng Kong
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China
| | - Qichang Hu
- Fujian Key Laboratory of Agricultural Information Sensoring Technology, College of Mechanical and Electrical Engineering, Fujian Agriculture and Forestry University, Fuzhou, Fujian 350002, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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15
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Yan S, Yang G, He H, Liu Q, Peng Q, Chen J, Li M, Lu Y, He Y. High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO 2/β-Ga 2O 3 Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:22263-22273. [PMID: 37114741 DOI: 10.1021/acsami.3c02209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Ga2O3 is a wide-bandgap semiconductor that has shown great potential for application in solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of Ga2O3-based self-driven solar-blind UV photodetectors are insufficient for practical applications at present because of the limited separation of photogenerated carriers in the devices. In this work, Hf0.5Zr0.5O2/β-Ga2O3 heterojunction-based self-driven solar-blind UV photodetectors are constructed by combining ferroelectric Hf0.5Zr0.5O2 (HfZrO2) material with Ga2O3, taking advantage of the ultrawide bandgap of HfZrO2 and the favorable II-type energy band configuration between both. Upon optimization, a HfZrO2/β-Ga2O3 heterojunction-based UV photodetector with a HfZrO2 layer thickness of 10 nm is shown to provide remarkable responsivity (R = (14.64 ± 0.3) mA/W) and detectivity (D* = (1.58 ± 0.03) × 1012 Jones), which are much superior to those of a single Ga2O3-based device toward 240 nm light illumination. Further, the device performance is adjustable with varying poling states of HfZrO2 and shows substantial enhancement in the upward poling state, benefiting from the constructive coupling of the ferroelectric depolarization electric field in HfZrO2 and the built-in electric field at the HfZrO2/β-Ga2O3 interface. Under illumination of weak light of 0.19 μW/cm2, the upward poled device shows significantly enhanced R (52.6 mA/W) and D* (5.7 × 1012 Jones) values. The performance of our device surpasses those of most previously reported Ga2O3-based self-driven photodetectors, indicating its great potential in practical applications for sensitive solar-blind UV detection.
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Affiliation(s)
- Shuang Yan
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Gaochen Yang
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Huanfeng He
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Qi Liu
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Qingqi Peng
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Jian Chen
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Mingkai Li
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Yinmei Lu
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
| | - Yunbin He
- Ministry of Education, Key Laboratory of Green Preparation and Application for Functional Materials, Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices, Hubei Key Laboratory of Polymer Materials, School of Materials Science & Engineering, Hubei University, Wuhan 430062, China
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16
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Hu T, Zhao L, Wang Y, Lin H, Xie S, Hu Y, Liu C, Zhu W, Wei Z, Liu J, Wang K. High-Sensitivity and Fast-Speed UV Photodetectors Based on Asymmetric Nanoporous-GaN/Graphene Vertical Junction. ACS NANO 2023; 17:8411-8419. [PMID: 37115108 DOI: 10.1021/acsnano.3c00263] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
GaN-based photodetectors are strongly desirable in many advanced fields, such as space communication, environmental monitoring, etc. However, the slow photo-response speed in currently reported high-sensitivity GaN-based photodetectors still hinders their applications. Here, we demonstrate a high-sensitivity and fast-speed UV photodetector based on asymmetric Au/nanoporous-GaN/graphene vertical junctions. The nanoporous GaN-based vertical photodetector shows an excellent rectification ratio up to ∼105 at +4 V/-4 V. The photo-responsivity and specific detectivity of the device is up to 1.01 × 104 A/W and 7.84 × 1014 Jones, respectively, more than three orders of magnitude higher than the control planar photodetector. With switching light on and off, the repeatable on/off current ratio of the nanoporous GaN-based vertical photodetector is ∼4.32 × 103, which is about 1.51 × 103 times to that of the control planar device. The measured rise/decay time is 12.2 μs/14.6 μs, which is the fastest value for the high-sensitivity GaN-based photodetectors to date. These results suggest that the asymmetric Au/nanoporous-GaN/graphene structure can improve the sensitivity and the photo-response speed of GaN-based PDs simultaneously.
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Affiliation(s)
- Tiangui Hu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Electrical Engineering, Tiangong University, No. 399, Binshuixi Road, Xiqing District, Tianjin 300387, China
| | - Yujing Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hailong Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shihong Xie
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Yin Hu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jian Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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17
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Kumar M, Lim S, Kim J, Seo H. Picoampere Dark Current and Electro-Opto-Coupled Sub-to-Super-linear Response from Mott-Transition Enabled Infrared Photodetector for Near-Sensor Vision Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210907. [PMID: 36740630 DOI: 10.1002/adma.202210907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 02/01/2023] [Indexed: 05/05/2023]
Abstract
Light-intensity selective superlinear photodetectors with ultralow dark current can provide an essential breakthrough for the development of high-performing near-sensor vision processing. However, the development of near-sensor vision processing is not only conceptually important for device operation (given that sensors naturally exhibit linear/sublinear responses), but also essential to get rid of the massive amount of data generated during object sensing and classification with noisy inputs. Therefore, achieving the giant superlinear photoresponse while maintaining the picoampere leakage current, irrespective of the measurement bias, is one of the most challenging tasks. Here, Mott material (vanadium dioxide) and silicon-based integrated infrared photodetectors are developed that show giant superlinear photoresponse (exponent >18) and ultralow dark current of 4.46 pA. Specifically, the device demonstrates an electro-opto-coupled insulator-to-metal transition, which leads to outstanding photocurrent on/off ratio (>106 ), a high responsivity (>1 mA W-1 ), and excellent detectivity (>1012 Jones), while maintaining response speed (τr = 6 µs and τf = 10 µs). Further, intensity-selective near-sensor processing is demonstrated and night vision pattern reorganization even with noisy inputs is exhibited. This research will pave the way for the creation of high-performance photodetectors with potential uses, such as in night vision, pattern recognition, and neuromorphic processing.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Seokwon Lim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Jisu Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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18
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Zhou S, Zheng Q, Yu C, Huang Z, Chen L, Zhang H, Li H, Xiong Y, Kong C, Ye L, Li W. A High-Performance ε-Ga 2O 3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging. MATERIALS (BASEL, SWITZERLAND) 2022; 16:ma16010295. [PMID: 36614634 PMCID: PMC9822404 DOI: 10.3390/ma16010295] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 12/20/2022] [Accepted: 12/23/2022] [Indexed: 05/27/2023]
Abstract
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.
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Affiliation(s)
| | | | | | | | | | - Hong Zhang
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
| | | | | | | | - Lijuan Ye
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
| | - Wanjun Li
- Correspondence: (H.Z.); (L.Y.); (W.L.); Tel.: +86-23-6536-2779 (W.L.)
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19
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Sheoran H, Fang S, Liang F, Huang Z, Kaushik S, Manikanthababu N, Zhao X, Sun H, Singh R, Long S. High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga 2O 3-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52096-52107. [PMID: 36346904 DOI: 10.1021/acsami.2c08511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 °C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to-dark-current ratio (PDCR) of the order of 105 at zero bias and >105 at higher biases of 5 and 10 V, which remains almost constant up to 125 °C. The high responsivity of 6.62 A/W is obtained at 10 V at room temperature (RT) under the weak illumination of 42.86 μW/cm2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 × 10-14 and 1.03 × 10-16 W/Hz1/2 and ultrahigh detectivity of 5.51 × 1011 and 3.10 × 1014 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 103 at zero bias and 105 at 5 V are obtained. These results demonstrate the potential of Ga2O3-based DUV PDs for solar-blind detection applications that require high-temperature robustness.
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Affiliation(s)
- Hardhyan Sheoran
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Shi Fang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Fangzhou Liang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Zhe Huang
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Shuchi Kaushik
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Nethala Manikanthababu
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
| | - Xiaolong Zhao
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi110016, India
| | - Shibing Long
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui230026, People's Republic of China
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20
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Gong W, Yan J, Gao F, Ding S, He G, Li L. High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga 2O 3/Au/MAPbBr 3 Sandwich Structure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47853-47862. [PMID: 36251575 DOI: 10.1021/acsami.2c11681] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga2O3, Au electrodes, and the MAPbBr3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga2O3/Au/MAPbBr3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga2O3 and MAPbBr3, which gives the β-Ga2O3/Au/MAPbBr3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.
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Affiliation(s)
- Weiqiang Gong
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Jun Yan
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Sunan Ding
- School of Microelectronics, Southern University of Science and Technology, Shenzhen518055, China
| | - Gaohang He
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
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Ma Y, Chen T, Zhang X, Tang W, Feng B, Hu Y, Zhang L, Zhou X, Wei X, Xu K, Mudiyanselage D, Fu H, Zhang B. High-Photoresponsivity Self-Powered a-, ε-, and β-Ga 2O 3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD. ACS APPLIED MATERIALS & INTERFACES 2022; 14:35194-35204. [PMID: 35877929 DOI: 10.1021/acsami.2c06927] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this paper, self-powered ultraviolet (UV) photodetectors with high response performance based on Ga2O3/p-GaN were fabricated by metal-organic chemical vapor deposition (MOCVD). The effects of different crystal phases of Ga2O3 (including a, ε, ε/β, and β) grown on p-GaN films on the performance of photodetectors were systematically studied. Moreover, an in situ GaON dielectric layer improved the responsivity of Ga2O3/p-GaN photodetectors by 20 times. All Ga2O3/p-GaN photodetectors showed self-power capability without bias. An ultralow dark current of 3.08 pA and a Iphoto/Idark ratio of 4.1 × 103 (1.8 × 103) under 254 nm (365 nm) light were obtained for the β-Ga2O3/p-GaN photodetector at 0 V bias. Furthermore, the β-Ga2O3/p-GaN photodetector showed excellent sensitivity with a high responsivity of 3.8 A/W (0.83 A/W), a fast response speed of 66/36 ms (36/73 ms), and a high detectivity of 1.12 × 1014 Jones (2.44 × 1013 Jones) under 254 nm (365 nm) light at 0 V bias. The carrier transport mechanism of the Ga2O3/p-GaN self-powered photodetector was also analyzed through the device energy band diagram. This work provides critical information for the design and fabrication of high-performance self-powered Ga2O3/p-GaN UV photodetectors, opening the door to a variety of photonic systems and applications without an external power supply.
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Affiliation(s)
- Yongjian Ma
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Tiwei Chen
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Xiaodong Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Wenbo Tang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Boyuan Feng
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, 215123 Suzhou, China
| | - Yu Hu
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Li Zhang
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Xin Zhou
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Xing Wei
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Kun Xu
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Dinusha Mudiyanselage
- Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Houqiang Fu
- Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, United States
| | - Baoshun Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
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22
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Zheng Z, Wang W, Wu F, Wang Z, Shan M, Zhao Y, Liu W, Jian P, Dai J, Lu H, Chen C. Flexible assembly of the PEDOT: PSS/ exfoliated β-Ga 2O 3 microwire hybrid heterojunction for high-performance self-powered solar-blind photodetector. OPTICS EXPRESS 2022; 30:21822-21832. [PMID: 36224894 DOI: 10.1364/oe.461342] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 05/22/2022] [Indexed: 06/16/2023]
Abstract
Motivated by the goals of fabricating highly reliable, high performance, and cost-efficient self-powered photodetector (PD) for numerous scientific research and civil fields, an organic-inorganic hybrid solar-blind ultraviolet (UV) PD based on PEDOT: PSS/exfoliated β-Ga2O3 microwire heterojunction was fabricated by a flexible and cost-effective assembly method. Benefiting from the heterojunction constructed by the highly crystalline β-Ga2O3 and the excellent hole transport layer PEDOT: PSS, the device presents a high responsivity of 39.8 mA/W at 250 nm and a sharp cut-off edge at 280 nm without any power supply. Additionally, the ultra-high normalized photo-to-dark current ratio (> 104 mW-1cm2) under reverse bias and the superior detectivity of 2.4×1012 Jones at zero bias demonstrate the excellent detection capabilities. Furthermore, the hybrid PD exhibits a rapid rise time (several milliseconds) and high rejection ratio (R250/R365: 5.8 × 103), which further highlights its good spectral selectivity for solar-blind UV. The prominent performance is mainly ascribed to the efficient separation of the photogenerated carriers by the large built-in electric field of the advanced heterojunction. This flexible assembly strategy for solar-blind UV PD combines the advantages of high efficiency, low cost and high performance, providing more potential for PD investigation and application in the future.
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Zhang D, Lin Z, Zheng W, Huang F. Pt/ZnGa 2O 4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5653-5660. [PMID: 35072470 DOI: 10.1021/acsami.1c23453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, a strategy of constructing a back-to-back heterojunction is proposed to fabricate Si-based photovoltaic photodetectors with high deep ultraviolet (DUV) spectral selectivity. By combining Pt with a thickness of 4 nm with a ZnGa2O4/Si heterojunction, a back-to-back heterojunction is successfully constructed. Based on that, a Pt/ZnGa2O4/p-Si DUV photovoltaic detector with a low dark current density (∼9.6 × 10-5 μA/cm2), a large photo-to-dark current ratio (PDCR, >105), and a fast response speed (decay time <50 ms) is fabricated. At 0 V bias, this device displays a photoresponsivity of about 1.36 mA/W and a high deep ultraviolet-visible (DUV-vis) rejection ratio (R258 nm/R420 nm) of ∼1.1 × 105, which are 1-2 orders of magnitude higher than those of most photovoltaic DUV detectors reported currently. Even at a working temperature of 470 K, the detectivity of this device can still reach ∼1.23 × 1010 Jones. In addition, compared with Au/ZnGa2O4/Si devices, the dark current and PDCR of this Pt/ZnGa2O4/Si device decrease by 2 orders of magnitude and increase by 1 order of magnitude, respectively. The enhanced performance of this ZnGa2O4/Si device can be attributed to the higher Schottky barrier established between Pt with a higher work function and ZnGa2O4. This strategy of adopting a back-to-back heterojunction device structure to hinder the visible light photoresponse of Si-based photodetectors and thus to reduce the dark current of a device can provide a reference for preparing photovoltaic DUV detectors with excellent performance.
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Affiliation(s)
- Dan Zhang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
| | - Zhuogeng Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Feng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
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24
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Yuan Y, Hao W, Mu W, Wang Z, Chen X, Liu Q, Xu G, Wang C, Zhou H, Zou Y, Zhao X, Jia Z, Ye J, Zhang J, Long S, Tao X, Zhang R, Hao Y. Toward emerging gallium oxide semiconductors: A roadmap. FUNDAMENTAL RESEARCH 2021. [DOI: 10.1016/j.fmre.2021.11.002] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023] Open
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25
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Liu C, Li X, Hu T, Zhu W, Yan F, Wu T, Wang K, Zhao L. A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector. NANOSCALE 2021; 13:17512-17520. [PMID: 34652361 DOI: 10.1039/d1nr04102a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 1017 Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.
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Affiliation(s)
- Chang Liu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Tiangui Hu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiesheng Wu
- Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- School of Electrical and Electronic Engineering, Tiangong University, 399 Binshuixi Road, Tianjin 300387, P. R. China.
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Al Fattah MF, Khan AA, Anabestani H, Rana MM, Rassel S, Therrien J, Ban D. Sensing of ultraviolet light: a transition from conventional to self-powered photodetector. NANOSCALE 2021; 13:15526-15551. [PMID: 34522938 DOI: 10.1039/d1nr04561j] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Clouds in the sky pass almost 80% of ultraviolet (UV) radiation to the earth's surface, which has a significant impact on humankind. Conventional UV photodetectors (PDs) require an external battery, which not only increases the device size but also has a limited life span and maintenance costs can be prohibitively expensive. An alternative and more technically-sound solution would be the use of self-powered UV PDs that can operate independently, eliminating the need for an external source. Although many exciting studies have been done and state-of-the-art research is underway to successfully fabricate self-powered UV PDs, periodic reviews on this topic are deemed essential so that the technology's readiness can be properly evaluated and critical challenges can be addressed in a timely manner. In this article, the key issues and most exciting developments made in recent years on built-in electric field assisted self-powered UV PDs based on p-n homojunctions, p-n heterojunctions, and Schottky junctions followed by energy harvester integrated UV PDs are extensively reviewed. Finally, a summary and comparison of different types of self-powered UV PDs as well as future challenges that need to be addressed are discussed. This review sets a foundation providing essential insights into the present status of self-powered UV PDs with which researchers can engage and deal with the major challenges.
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Affiliation(s)
- Md Fahim Al Fattah
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
| | - Asif Abdullah Khan
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
| | - Hossein Anabestani
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
| | - Md Masud Rana
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
| | - Shazzad Rassel
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
| | - Joel Therrien
- Department of Electrical and Computer Engineering, University of Massachusetts, Lowel, Massachusetts, USA
| | - Dayan Ban
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave, Waterloo, ON, Canada.
- School of Physics and Electronics, Henan University, No. 1 Jinming street, Kaifeng, Henan, P. R. China
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Mohan L, Ratnasingham SR, Panidi J, Daboczi M, Kim JS, Anthopoulos TD, Briscoe J, McLachlan MA, Kreouzis T. Determining Out-of-Plane Hole Mobility in CuSCN via the Time-of-Flight Technique To Elucidate Its Function in Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:38499-38507. [PMID: 34365787 DOI: 10.1021/acsami.1c09750] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Copper(I) thiocyanate (CuSCN) is a stable, low-cost, solution-processable p-type inorganic semiconductor used in numerous optoelectronic applications. Here, for the first time, we employ the time-of-flight (ToF) technique to measure the out-of-plane hole mobility of CuSCN films, enabled by the deposition of 4 μm-thick films using aerosol-assisted chemical vapor deposition (AACVD). A hole mobility of ∼10-3 cm2/V s was measured with a weak electric field dependence of 0.005 cm/V1/2. Additionally, by measuring several 1.5 μm CuSCN films, we show that the mobility is independent of thickness. To further validate the suitability of our AACVD-prepared 1.5 μm-thick CuSCN film in device applications, we demonstrate its incorporation as a hole transport layer (HTL) in methylammonium lead iodide (MAPbI3) perovskite solar cells (PSCs). Our AACVD films result in devices with measured power conversion efficiencies of 10.4%, which compares favorably with devices prepared using spin-coated CuSCN HTLs (12.6%), despite the AACVD HTLs being an order of magnitude thicker than their spin-coated analogues. Improved reproducibility and decreased hysteresis were observed, owing to a combination of excellent film quality, high charge-carrier mobility, and favorable interface energetics. In addition to providing a fundamental insight into charge-carrier mobility in CuSCN, our work highlights the AACVD methodology as a scalable, versatile tool suitable for film deposition for use in optoelectronic devices.
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Affiliation(s)
- Lokeshwari Mohan
- Department of Materials and Centre for Processable Electronics, Imperial College London, Molecular Sciences Research Hub, White City Campus, London W12 0BZ, U.K
- School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, Mile End Road, London E1 4NS, U.K
| | - Sinclair R Ratnasingham
- Department of Materials and Centre for Processable Electronics, Imperial College London, Molecular Sciences Research Hub, White City Campus, London W12 0BZ, U.K
- School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, Mile End Road, London E1 4NS, U.K
| | - Julianna Panidi
- Department of Physics and Centre for Processable Electronics, Imperial College London, South Kensington, London SW7 2AZ, U.K
| | - Matyas Daboczi
- Department of Physics and Centre for Processable Electronics, Imperial College London, South Kensington, London SW7 2AZ, U.K
| | - Ji-Seon Kim
- Department of Physics and Centre for Processable Electronics, Imperial College London, South Kensington, London SW7 2AZ, U.K
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Joe Briscoe
- School of Engineering and Materials Science and Materials Research Institute, Queen Mary University of London, Mile End Road, London E1 4NS, U.K
| | - Martyn A McLachlan
- Department of Materials and Centre for Processable Electronics, Imperial College London, Molecular Sciences Research Hub, White City Campus, London W12 0BZ, U.K
| | - Theo Kreouzis
- School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, U.K
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28
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Ma J, Xia X, Yan S, Li Y, Liang W, Yan J, Chen X, Wu D, Li X, Shi Z. Stable and Self-Powered Solar-Blind Ultraviolet Photodetectors Based on a Cs 3Cu 2I 5/β-Ga 2O 3 Heterojunction Prepared by Dual-Source Vapor Codeposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15409-15419. [PMID: 33779137 DOI: 10.1021/acsami.1c00387] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Self-powered solar-blind ultraviolet (UV) photodetectors have drawn worldwide attention in recent years because of their important applications in military and civilian areas. In this study, a dual-source vapor codeposition technique was employed, for the first time, to prepare a nontoxic copper halide Cs3Cu2I5, which was integrated with the β-Ga2O3 wafer to construct a type-II heterojunction for photodetection applications. By optimizing the annealing conditions, high-quality Cs3Cu2I5 films with dense morphology, high crystallinity, and a long carrier lifetime of 1.02 μs were acquired. Because of the high material integrity of Cs3Cu2I5 films and effective interfacial carrier transfer from Cs3Cu2I5 to β-Ga2O3, a heterojunction device demonstrates a good solar-blind UV response property and operates at zero bias. Typically, the photodetector presents a low dark current (∼1.2 pA), a high solar-blind/UVA rejection ratio (∼1.0 × 103), a relatively fast photoresponse speed (37/45 ms), and a high photo-to-dark current ratio (∼5.1 × 104) at zero bias. Moreover, even after 12-h continuous working and 2-month storage without encapsulation in ambient air, the photodetection ability of the device can almost be maintained, demonstrating outstanding air stability. Our results suggest that nontoxic Cs3Cu2I5 is able to serve as a prospective candidate for stable solar-blind UV photodetection.
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Affiliation(s)
- Jingli Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xiaochuan Xia
- School of Microelectronics, Dalian University of Technology, Dalian 116023, China
| | - Su Yan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Ying Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Wenqing Liang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Jingjing Yan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, 75 Daxue Road, Zhengzhou 450052, China
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Luo G, Zhang Z, Jiang J, Liu Y, Li W, Zhang J, Hao X, Wang W. Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers. RSC Adv 2021; 11:7682-7692. [PMID: 35423239 PMCID: PMC8695045 DOI: 10.1039/d0ra10420e] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Accepted: 01/14/2021] [Indexed: 11/21/2022] Open
Abstract
Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W-1 at 375 nm under 65 mW cm-2 illumination, rectification ratio: 5690 at ±1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W-1, 10.22 at ±1 V) and maintains the 100 ms response time.
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Affiliation(s)
- Guangcan Luo
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Ziling Zhang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Jing Jiang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Yang Liu
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Wei Li
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Jingquan Zhang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Xia Hao
- Institute of New Energy and Low-carbon Technology, Sichuan University Chengdu 610027 China
| | - Wenwu Wang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
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Li S, Zhi Y, Lu C, Wu C, Yan Z, Liu Z, Yang J, Chu X, Guo D, Li P, Wu Z, Tang W. Broadband Ultraviolet Self-Powered Photodetector Constructed on Exfoliated β-Ga 2O 3/CuI Core-Shell Microwire Heterojunction with Superior Reliability. J Phys Chem Lett 2021; 12:447-453. [PMID: 33356281 DOI: 10.1021/acs.jpclett.0c03382] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A heterojunction is an essential strategy for multispectral energy-conservation photodetection for its ability to separate photogenerated electron-hole pairs and tune the absorption edge by selecting semiconductors with appropriate bandgaps. A broadband ultraviolet (200-410 nm) self-powered photodetector is constructed on the exfoliated β-Ga2O3/CuI core-shell microwire heterostructure. Benefiting from the photovoltaic and photoconductive effects, our device performs an excellent ultraviolet (UV) discriminability with a UVC/visible rejection ratio (R225/R600) of 8.8 × 103 and a UVA/visible rejection ratio (R400/R600) of 2.7 × 102, and a self-powered photodetection with a responsivity of 8.46 mA/W, a detectivity of 7.75 × 1011 Jones, an on/off switching ratio of 4.0 × 103, and a raise/decay speed of 97.8/28.9 ms under UVC light. Even without encapsulation, the photodetector keeps a superior stability over ten months. The intrinsically physical insights of the device behaviors are investigated via energy band diagrams, and the charge carrier transfer characteristics of the β-Ga2O3/CuI interface are predicted by first principle calculation.
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Affiliation(s)
- Shan Li
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Yusong Zhi
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Chao Lu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Chao Wu
- Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Zuyong Yan
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Zeng Liu
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Jian Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xulong Chu
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- China Aerospace System Simulation Technology Co., Ltd. (Beijing), Beijing 100195,China
| | - Daoyou Guo
- Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Peigang Li
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Zhenping Wu
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Weihua Tang
- Laboratory of Information Functional Materials and Devices, School of Science, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
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Li KH, Kang CH, Min JH, Alfaraj N, Liang JW, Braic L, Guo Z, Hedhili MN, Ng TK, Ooi BS. Single-Crystalline All-Oxide α-γ-β Heterostructures for Deep-Ultraviolet Photodetection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53932-53941. [PMID: 33203211 DOI: 10.1021/acsami.0c15398] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent advancements in gallium oxide (Ga2O3)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga2O3 layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga2O3 layer grown on an α-Al2O3 substrate through an interfacial γ-In2O3 layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In2O3 provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga2O3, cubic γ-In2O3, and trigonal α-Al2O3, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga2O3/γ-In2O3 interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga2O3/γ-In2O3/α-Al2O3 all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 104%, and a specific detectivity of 3.09 × 1012 Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.
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Affiliation(s)
- Kuang-Hui Li
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Chun Hong Kang
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jung-Hong Min
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Nasir Alfaraj
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jian-Wei Liang
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Laurentiu Braic
- Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Zaibing Guo
- Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Mohamed Nejib Hedhili
- Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Tien Khee Ng
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Boon S Ooi
- Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Zhang T, Shen Y, Feng Q, Tian X, Cai Y, Hu Z, Yan G, Feng Z, Zhang Y, Ning J, Xu Y, Lian X, Sun X, Zhang C, Zhou H, Zhang J, Hao Y. The Investigation of Hybrid PEDOT:PSS/β-Ga 2O 3 Deep Ultraviolet Schottky Barrier Photodetectors. NANOSCALE RESEARCH LETTERS 2020; 15:163. [PMID: 32797318 PMCID: PMC7427831 DOI: 10.1186/s11671-020-03397-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Accepted: 08/05/2020] [Indexed: 06/11/2023]
Abstract
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕb increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga2O3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R254 nm/R400 nm up to 1.26 × 103 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga2O3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.
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Affiliation(s)
- Tao Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Yixian Shen
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Qian Feng
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Xusheng Tian
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Yuncong Cai
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Zhuangzhuang Hu
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Guangshuo Yan
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Zhaoqing Feng
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Yachao Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Jing Ning
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Yongkuan Xu
- China Electronics Technology Group Corporation No. 46 Research Institute, Tianjin, 300220 China
| | - Xiaozheng Lian
- China Electronics Technology Group Corporation No. 46 Research Institute, Tianjin, 300220 China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Opeics, Chinese Academy of Sciences, Changchun, 130033 China
| | - Chunfu Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Hong Zhou
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071 China
- Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, Xi’an, 710071 China
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Li J, Xi X, Lin S, Ma Z, Li X, Zhao L. Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11965-11971. [PMID: 32072811 DOI: 10.1021/acsami.9b22651] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of graphene with three-dimensional semiconductors can introduce unique optical and electrical properties that overcome the intrinsic limitation of the materials. Here, we report on the high sensitivity ultraviolet (UV) photodetectors based on monolayer graphene/nanoporous GaN heterojunctions. By investigating the reflectivity, photoluminescence, and Raman spectral characteristics of nanoporous GaN, we find that the increase in the porosity can help to improve its optical properties. The device based on the highest-porosity nanoporous GaN demonstrates rapid and linear response to UV photons, with an ultrahigh detectivity of 1.0 × 1017 Jones and a UV-visible rejection ratio of 4.8 × 107 at V = -1.5 V. We attribute such high sensitivity to the combination of the significantly enhanced light harvesting of high-porosity nanoporous GaN and the unique UV absorption, high mobility, and finite density of states of the monolayer graphene. The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xin Xi
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Shan Lin
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhanhong Ma
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Lixia Zhao
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
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Wang Y, Li L, Wang H, Su L, Chen H, Bian W, Ma J, Li B, Liu Z, Shen A. An ultrahigh responsivity self-powered solar-blind photodetector based on a centimeter-sized β-Ga 2O 3/polyaniline heterojunction. NANOSCALE 2020; 12:1406-1413. [PMID: 31872830 DOI: 10.1039/c9nr09095a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Wide band gap semiconductors are promising UV photodetector materials due to their suitable bandgap, high crystal quality, strong absorption and large carrier mobility. Up to now, deep UV photodetectors are mainly based on epitaxial thin films, which have some undesired properties such as p-type doping difficulty. Lattice mismatch hinders the further development of these devices. Here, a high performance self-powered solar-blind UV photodetector was realized by a facile combination of a centimeter-sized single crystal β-Ga2O3 microwire and polyaniline. Owing to the excellent organic/inorganic hybrid p-n junction, the device shows an ultrahigh responsivity of 21 mA W-1 at 246 nm with a sharp cut-off wavelength of 272 nm without an external power supply. Moreover, the dark current is 0.08 pA, which is smaller than those of almost all the previous metallic oxide based solar-blind UV photodetectors. The photodetector also shows a high UV/visible rejection ratio (102) at zero bias voltage. Finally, a physical model of the self-powered photodetector is also proposed. This work provides a simple, low-cost, and effective method for preparing high performance self-powered solar-blind UV photodetectors based on organic/inorganic heterojunctions.
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Affiliation(s)
- Yuefei Wang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
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Wang Y, Cui W, Yu J, Zhi Y, Li H, Hu ZY, Sang X, Guo EJ, Tang W, Wu Z. One-Step Growth of Amorphous/Crystalline Ga 2O 3 Phase Junctions for High-Performance Solar-Blind Photodetection. ACS APPLIED MATERIALS & INTERFACES 2019; 11:45922-45929. [PMID: 31718160 DOI: 10.1021/acsami.9b17409] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The pursuit of high-performance photodetectors functioning in the solar-blind spectrum is motivated by both scientific and practical applications ranging from secure communication, monitoring, sensing, etc. In particular, the fabrication of heterojunctions based on the wide band gap semiconductors has emerged as an attractive strategy to promote the high-efficient photogenerated electron/hole pair separation. However, the precisely controlled growth of heterojunctions remains a huge challenge. The lattice mismatch leads to the formation of defects and/or dislocations at the interface, deteriorating the performance of devices and limiting their envisioned applications. Here, we demonstrate a simple one-step growth of amorphous/crystalline Ga2O3 phase junctions by using sputtering technique, yielding a large responsivity of 0.81 A/W, a superior photo-to-dark current ratio over 107, and an ultrahigh response speed of ∼12 ns. Compared to the previous reported solar-blind photodetectors, the obtained detectivity ≈ 5.67 × 1014 Jones is increased by 2 orders of magnitude. Such excellent photoresponse characteristics can be understood by the interfacial built-in field-promoted electron/hole pair separation for the amorphous/crystalline Ga2O3 phase junctions. Our results provide a novel path toward realizing high-performance optoelectronics functioning in the solar-blind spectrum.
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Affiliation(s)
- Yuehui Wang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
| | | | - Jie Yu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
| | - Yusong Zhi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
| | - Haoran Li
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
| | | | | | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Weihua Tang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science , Beijing University of Posts and Telecommunications , Beijing 100876 , China
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Wang H, Chen H, Li L, Wang Y, Su L, Bian W, Li B, Fang X. High Responsivity and High Rejection Ratio of Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga 2O 3 Organic/Inorganic p-n Junction. J Phys Chem Lett 2019; 10:6850-6856. [PMID: 31623440 DOI: 10.1021/acs.jpclett.9b02793] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystallized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cutoff wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm/R280 nm) of 103, which is two orders of magnitude larger than the average value reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow bandpass response of only 17 nm in width. This work might be of great value in developing a high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
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Affiliation(s)
- Hebin Wang
- Department of Physics , Harbin Institute of Technology , Harbin 150001 , P. R. China
| | - Hongyu Chen
- Department of Physics , Harbin Institute of Technology , Harbin 150001 , P. R. China
| | - Li Li
- School of Life Science and Technology , Harbin Institute of Technology , Harbin 150080 , P. R. China
| | - Yuefei Wang
- Department of Physics , Harbin Institute of Technology , Harbin 150001 , P. R. China
| | - Longxing Su
- Department of Physical Science and Technology , ShanghaiTech University , Shanghai 201210 , P. R. China
| | - Wanpeng Bian
- Department of Physics , Harbin Institute of Technology , Harbin 150001 , P. R. China
| | - Bingsheng Li
- Center for Advanced Optoelectronic Functional Materials Research, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , P. R. China
| | - Xiaosheng Fang
- Department of Materials Science , Fudan University , Shanghai 200433 , P. R. China
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