1
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Ardra M, Gayathri R, Swetha SV, Mohamed Imran P, Nagarajan S. Tweaking the Non-Volatile Write-Once-Read-Many-Times (WORM) Memory using Donor-Acceptor Architecture with Isatin as Core Acceptor. Chempluschem 2024; 89:e202400018. [PMID: 38446710 DOI: 10.1002/cplu.202400018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 03/04/2024] [Accepted: 03/06/2024] [Indexed: 03/08/2024]
Abstract
Organic memory devices have attracted attention because they promise flexible electronics, low manufacturing costs, and compatibility with large-scale integration. A series of new D-A architectures were synthesized employing different donor groups and the isatin moiety as the acceptor through Suzuki-Miyaura coupling reactions. Strong intramolecular interactions were observed in the synthesized compounds, further corroborated by an optimal bandgap. The SEM investigation confirmed good molecular ordering and superior thin film surface coverage. All the compounds demonstrated notable binary Write-Once-Read-Many-Times (WORM) memory behaviour. The threshold switching voltage for these D-A systems ranged from -0.79 to -2.37 V, with the compound having isobutyl substituent showing the lowest threshold voltage and maximum ON/OFF ratio of 102, thus outperforming others. The combined effects of charge transfer and charge trapping are responsible for the resistive switching mechanism prevailing in these systems. The alterations in D-A molecules that affect molecular packing, thin film morphology, and, finally, the memory performance of the active layer are highlighted in this work.
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Affiliation(s)
- Murali Ardra
- Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, 610005, India
| | - Ramesh Gayathri
- Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, 610005, India
| | - Senthilkumar V Swetha
- Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, 610005, India
| | | | - Samuthira Nagarajan
- Organic Electronics Division, Department of Chemistry, Central University of Tamil Nadu, Thiruvarur, 610005, India
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2
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Gayathri R, Akshaya M, Imran PM, Nagarajan S. Design of Triphenylamine-based D-π-A Systems for Efficient Ternary WORM Memory Devices. Chemistry 2024:e202402015. [PMID: 38926292 DOI: 10.1002/chem.202402015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Revised: 06/25/2024] [Accepted: 06/25/2024] [Indexed: 06/28/2024]
Abstract
The impact of various substituent moieties on the molecular framework of a conjugated D-A system in resistive switching memory property has been scrutinized through an array of novel D-π-A molecules. The synthesized molecules with triphenylamine (TPA) as the electron donor and dicyanovinylindanone (IC) as the electron acceptor demonstrated substantial non-volatile WORM (Write-Once Read-Many) memory behaviour with appreciable ON/OFF current ratios up to 105 and a lowest recorded threshold voltage of -0.80 V. The well-balanced combination of these potent electron donating and accepting units culminated in exceptional intramolecular charge transfer interactions and minimal band gap values (1.82-2.31 eV) for the molecules, as demonstrated by photophysical and electrochemical investigations. These factors, coupled with the thin-film morphological studies, corroborated the superior performance of the fabricated devices. A longer retention time of 2000s and an endurance of 100 cycles mark the substantial stability of the memory devices. Moreover, conversion from binary to ternary WORM memory was achieved by the effective tuning of the electronic properties of the D-A systems by various substituent moieties. Molecular simulation studies revealed that the resistive switching phenomenon arises from a synergistic interplay of charge transfer and charge trapping processes within these D-A systems.
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Affiliation(s)
- Ramesh Gayathri
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | - Madanan Akshaya
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | | | - Samuthira Nagarajan
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
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3
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Sun B, Chen Y, Zhou G, Cao Z, Yang C, Du J, Chen X, Shao J. Memristor-Based Artificial Chips. ACS NANO 2024; 18:14-27. [PMID: 38153841 DOI: 10.1021/acsnano.3c07384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2023]
Abstract
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior that is assembled with a physically integrated core processing unit (CPU) and memory unit and even possesses highly possible multistate electrical behavior, could avoid the von Neumann bottleneck of traditional computing devices and show a highly efficient ability of parallel computation and high information storage. These advantages position them as potential candidates for future data-centric computing requirements and add remarkable vigor to the research of next-generation artificial intelligence (AI) systems, particularly those that involve brain-like intelligence applications. This work provides an overview of the evolution of memristor-based devices, from their initial use in creating artificial synapses and neural networks to their application in developing advanced AI systems and brain-like chips. It offers a broad perspective of the key device primitives enabling their special applications from the view of materials, nanostructure, and mechanism models. We highlight these demonstrations of memristor-based nanoelectronic devices that have potential for use in the field of brain-like AI, point out the existing challenges of memristor-based nanodevices toward brain-like chips, and propose the guiding principle and promising outlook for future device promotion and system optimization in the biomedical AI field.
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Affiliation(s)
- Bai Sun
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Guangdong Zhou
- College of Artificial Intelligence, Brain-inspired Computing & Intelligent Control of Chongqing Key Lab, Southwest University, Chongqing 400715, People's Republic of China
| | - Zelin Cao
- National Local Joint Engineering Research Center for Precision Surgery & Regenerative Medicine, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Department of Hepatobiliary Surgery, the First Affiliated Hospital of Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chuan Yang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Junmei Du
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, People's Republic of China
| | - Xiaoliang Chen
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jinyou Shao
- Micro-and Nano-technology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
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4
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Lin X, Zhou P, Gao Y, Li T, Chen X, Li H, Jiang R, Chen Z, Zheng H. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S 62- Relaxation. Inorg Chem 2024; 63:775-783. [PMID: 38134353 DOI: 10.1021/acs.inorgchem.3c03787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2023]
Abstract
Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of Sn2- relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on Sn2- relaxation are still ambiguous. In this work, ionic [Zn(S6)2·Zn2(Bipy)2SO4 (1), Zn(S6)2·Zn(Pmbipy)3 (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)2 (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S62- relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6'-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S62- anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 °C, which has been verified by elongated S-S lengths and the strengthened C-H···S hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.
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Affiliation(s)
- Xiaoli Lin
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Panke Zhou
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Yiqun Gao
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Xiong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Rong Jiang
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
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5
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Li B, Zhang S, Xu L, Su Q, Du B. Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. Polymers (Basel) 2023; 15:4374. [PMID: 38006098 PMCID: PMC10675020 DOI: 10.3390/polym15224374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/07/2023] [Accepted: 11/07/2023] [Indexed: 11/26/2023] Open
Abstract
Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.
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Affiliation(s)
- Bixin Li
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an 710072, China
- School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
| | - Shiyang Zhang
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Lan Xu
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Qiong Su
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Bin Du
- School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China
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6
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Xie Y, Wang CY, Chen N, Cao Z, Wu G, Yin B, Li Y. Supramolecular Memristor Based on Bistable [2]Catenanes: Toward High-Density and Non-Volatile Memory Devices. Angew Chem Int Ed Engl 2023; 62:e202309605. [PMID: 37651501 DOI: 10.1002/anie.202309605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2023] [Revised: 08/31/2023] [Accepted: 08/31/2023] [Indexed: 09/01/2023]
Abstract
The ever-increasing demand for data storage and neuromorphic computing calls for innovative, high-density solutions, such as resistive random-access memory (RRAM). However, the integration of resistive switching and rectification at the nanoscale remains a formidable challenge. In this study, we introduce a bistable [2]catenane-based supramolecular junction that simultaneously functions as a resistive switch and a diode. All supramolecular junctions are highly stable and reproducible over thousands of resistive switching cycles, because the nano-confinement of two mechanically interlocked rings can stabilize the radical states of pyridinium moieties under ambient conditions. The successful realization of supramolecular junctions in functionality with a thickness of approximately 2 nm presents a promising avenue for the development of molecule-scale based RRAM for a better solution to high density and energy efficiency.
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Affiliation(s)
- Yu Xie
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Cai-Yun Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Ningyue Chen
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Zhou Cao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Guangcheng Wu
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Bangchen Yin
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Yuan Li
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
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7
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Angela VM, Harshini D, Imran PM, Bhuvanesh NSP, Nagarajan S. Efficient ternary WORM memory devices from quinoline-based D-A systems by varying the redox behavior of ferrocene. RSC Adv 2023; 13:28416-28425. [PMID: 37766933 PMCID: PMC10521766 DOI: 10.1039/d3ra05685f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2023] [Accepted: 09/07/2023] [Indexed: 09/29/2023] Open
Abstract
The design and synthesis of ferrocene-functionalized organic small molecules using quinoline cores are rendered to achieve a ternary write-once-read-many (WORM) memory device. Introducing an electron-withdrawing group into the ferrocene system changes the compounds' photophysical, electrochemical, and memory behavior. The compounds were synthesized with and without an acetylene bridge between the ferrocene unit and quinoline. The electrochemical studies proved the oxidation behavior with a slightly less intense reduction peak of the ferrocene unit, demonstrating that quinolines have more reducing properties than ferrocene with bandgaps ranging from 2.67-2.75 eV. The single crystal analysis of the compounds also revealed good interactive interactions, ensuring good molecular packing. This further leads to a ternary WORM memory with oxidation of the ferrocene units and charge transfer in the compounds. The devices exhibit on/off ratios of 104 and very low threshold voltages of -0.58/-1.02 V with stabilities of 103 s and 100 cycles of all the states through retention and endurance tests.
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Affiliation(s)
- Varghese Maria Angela
- Department of Chemistry, Organic Electronics Division, Central University of Tamil Nadu Thiruvarur 610 005 India
| | - Deivendran Harshini
- Department of Chemistry, Organic Electronics Division, Central University of Tamil Nadu Thiruvarur 610 005 India
| | | | | | - Samuthira Nagarajan
- Department of Chemistry, Organic Electronics Division, Central University of Tamil Nadu Thiruvarur 610 005 India
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8
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Zhou PK, Lin XL, Chee MY, Lew WS, Zeng T, Li HH, Chen X, Chen ZR, Zheng HD. Switching the memory behaviour from binary to ternary by triggering S 62- relaxation in polysulfide-bearing zinc-organic complex molecular memories. MATERIALS HORIZONS 2023. [PMID: 37070656 DOI: 10.1039/d3mh00037k] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)2-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2'-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (104.22/102.27/1 and 104.85/102.58/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S62- anions. The lower conjugated degrees in ZnS6(L)2 result in less compact packing; consequently, the adjacent S62- rings are too long to trigger the S62- relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
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Affiliation(s)
- Pan-Ke Zhou
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiao-Li Lin
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Mun Yin Chee
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Tao Zeng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Hao-Hong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Xiong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Zhi-Rong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fujian 350108, China.
| | - Hui-Dong Zheng
- Fujian Engineering Research Centre of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian, 350108, China.
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9
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Kamboj N, Betal A, Majumder M, Sahu S, Metre RK. Redox Switching Behavior in Resistive Memory Device Designed Using a Solution-Processable Phenalenyl-Based Co(II) Complex: Experimental and DFT Studies. Inorg Chem 2023; 62:4170-4180. [PMID: 36848532 DOI: 10.1021/acs.inorgchem.2c04264] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/01/2023]
Abstract
We herein report a novel square-planar complex [CoIIL], which was synthesized using the electronically interesting phenalenyl-derived ligand LH2 = 9,9'-(ethane-1,2-diylbis(azanediyl))bis(1H-phenalen-1-one). The molecular structure of the complex is confirmed with the help of the single-crystal X-ray diffraction technique. [CoIIL] is a mononuclear complex where the Co(II) ion is present in the square-planar geometry coordinated by the chelating bis-phenalenone ligand. The solid-state packing of [CoIIL] complex in a crystal structure has been explained with the help of supramolecular studies, which revealed that the π···π stacking present in the [CoIIL] complex is analogous to the one present in tetrathiafulvalene/tetracyanoquinodimethane charge transfer salt, well-known materials for their unique charge carrier interfaces. The [CoIIL] complex was employed as the active material to fabricate a resistive switching memory device, indium tin oxide/CoIIL/Al, and characterized using the write-read-erase-read cycle. The device has interestingly shown a stable and reproducible switching between two different resistance states for more than 2000 s. Observed bistable resistive states of the device have been explained by corroborating the electrochemical characterizations and density functional theory studies, where the role of the CoII metal center and π-conjugated phenalenyl backbone in the redox-resistive switching mechanism is proposed.
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Affiliation(s)
- Nisha Kamboj
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Moumita Majumder
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
| | - Ramesh K Metre
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan 342030, India
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10
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Roy G, Gupta R, Ranjan Sahoo S, Saha S, Asthana D, Chandra Mondal P. Ferrocene as an iconic redox marker: From solution chemistry to molecular electronic devices. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2022.214816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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11
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Wang G, Li H, Zhang Q, Zhang C, Yuan J, Wang Y, Lu J. Nanomicelles Array for Ultrahigh-Density Data Storage. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202637. [PMID: 35810450 DOI: 10.1002/smll.202202637] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 06/01/2022] [Indexed: 06/15/2023]
Abstract
High-density data storage devices based on organic and polymer materials are currently restricted by two key issues, size limitations and uniformity of memory cells. Herein, one triblock polymer is synthesized by ring-opening metathesis polymerization, where the polymer contains an electron-donor-acceptor (A1 D) segment, an electron-acceptor (A2 ) segment, and a hydrophilic segment, that shows ternary memory behavior in a conventional sandwich-type device. The polymers that have monodisperse molecular weight dispersity self-assemble into nanomicelles with a uniform size of 80 nm. Each nanomicelle is composed of an A1 DA2 -type hydrophobic core stabilized with a hydrophilic shell. Nanobowls based on conductive oxide are prepared via the template method, wherein the nanomicelles are present as independent nanoscale memory units to produce an array of micelle matrices. Investigations of the resulting nanomemory device using conductive atomic force microscopy show that the micelles exhibit a predominant semiconductor memory behavior. Compared to traditional ternary devices with a memory unit size of ≈1 mm, this innovative fabrication method based on arrayed uniform nanomicelles downscales the size of storage cells to 80 nm. Furthermore, the described system leads to a greatly enhanced storage density (>108 times over the same area), which opens up new paths for further development of ultrahigh-density data storage devices.
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Affiliation(s)
- Guan Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Qijian Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
- School of Materials Engineering, Changshu Institute of Technology, Changshu, 215500, P. R. China
| | - Cheng Zhang
- School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
| | - Junwei Yuan
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Yuxiang Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215123, P. R. China
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12
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Yan Q, Fan F, Zhang B, Liu G, Chen Y. MoS2 nanosheets functionalized with ferrocene-containing polymer via SI-ATRP for memristive devices with multilevel resistive switching. Eur Polym J 2022. [DOI: 10.1016/j.eurpolymj.2022.111316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2022]
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13
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Zhang Y, Dou F, Zhou Y, Zhao X, Chen J, Wang C, Wang S. Ternary Electrical Memory Devices Based on Polycarbazole: SnO 2 Nanoparticles Composite Material. Polymers (Basel) 2022; 14:polym14071494. [PMID: 35406367 PMCID: PMC9002687 DOI: 10.3390/polym14071494] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 02/05/2023] Open
Abstract
In this paper, a D–A polymer (PIB) containing carbazole as the donor group in the main chain and benzimidazole benzisoindolinone as the acceptor group was synthesized by Suzuki reaction. The Suzuki reaction, also known as the Suzuki coupling reaction, is a relatively new organic coupling reaction in which aryl or alkenyl boronic acids or boronic acid esters react with chlorine, bromine, iodoaromatic hydrocarbons or alkenes under the catalysis of zerovalent palladium complexes cross-coupling. A series of devices were fabricated by a spin-coating approach, and the devices all exhibited ternary resistance switching storage behavior. Among them, the composite device with the mass fraction of SnO2 NPs of 5 wt% has the best storage performance, with a threshold voltage of −0.4 V and a switching current ratio of 1:101.5:104.5. At the same time, the current of the device remained stable after a 3-h test. Furthermore, after 103 cycles, the current has no obvious attenuation. The device has good stability and continuity. Moreover, the conduction mechanism is further revealed. Inorganic nanoparticle composite devices have splendid memory performances and exhibit underlying application significance in storing data.
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Affiliation(s)
- Yingna Zhang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Feng Dou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Yijia Zhou
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
| | - Xiaofeng Zhao
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China;
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou 510640, China;
| | - Cheng Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
- Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University, Harbin 150080, China
- Correspondence: (C.W.); (S.W.)
| | - Shuhong Wang
- School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, China; (Y.Z.); (F.D.); (Y.Z.)
- Correspondence: (C.W.); (S.W.)
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14
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Lian H, Cheng X, Hao H, Han J, Lau MT, Li Z, Zhou Z, Dong Q, Wong WY. Metal-containing organic compounds for memory and data storage applications. Chem Soc Rev 2022; 51:1926-1982. [PMID: 35083990 DOI: 10.1039/d0cs00569j] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.
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Affiliation(s)
- Hong Lian
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Xiaozhe Cheng
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China.,Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
| | - Haotian Hao
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Jinba Han
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Mei-Tung Lau
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zikang Li
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zhi Zhou
- School of Chemistry and Materials Science, Hunan Agricultural University, Changsha 410128, China.
| | - Qingchen Dong
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Wai-Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
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15
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Wilkinson LA, Bennett TLR, Grace IM, Hamill J, Wang X, Au-Yong S, Ismael A, Jarvis SP, Hou S, Albrecht T, Cohen LF, Lambert C, Robinson BJ, Long NJ. Assembly, structure and thermoelectric properties of 1,1′-dialkynylferrocene ‘hinges’. Chem Sci 2022; 13:8380-8387. [PMID: 35919728 PMCID: PMC9297386 DOI: 10.1039/d2sc00861k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 06/24/2022] [Indexed: 11/21/2022] Open
Abstract
Dialkynylferrocenes exhibit attractive electronic and rotational features that make them ideal candidates for use in molecular electronic applications. However previous works have primarily focussed on single-molecule studies, with limited opportunities to translate these features into devices. In this report, we utilise a variety of techniques to examine both the geometric and electronic structure of a range of 1,1′-dialkynylferrocene molecules, as either single-molecules, or as self-assembled monolayers. Previous single molecule studies have shown that similar molecules can adopt an ‘open’ conformation. However, in this work, DFT calculations, STM-BJ experiments and AFM imaging reveal that these molecules prefer to occupy a ‘hairpin’ conformation, where both alkynes point towards the metal surface. Interestingly we find that only one of the terminal anchor groups binds to the surface, though both the presence and nature of the second alkyne affect the thermoelectric properties of these systems. First, the secondary alkyne acts to affect the position of the frontier molecular orbitals, leading to increases in the Seebeck coefficient. Secondly, theoretical calculations suggested that rotating the secondary alkyne away from the surface acts to modulate thermoelectric properties. This work represents the first of its kind to examine the assembly of dialkynylferrocenes, providing valuable information about both their structure and electronic properties, as well as unveiling new ways in which both of these properties can be controlled. Dialkynylferrocenes are interesting candidates for molecular electronics. Herein, numerous experiments are applied to probe their properties both as single-molecules and in monolayers, demonstrating unique geometric and thermoelectric properties.![]()
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Affiliation(s)
- Luke A. Wilkinson
- Department of Chemistry, Imperial College London, MSRH, White City, London, W12 0BZ, UK
- Department of Chemistry, University of York, Heslington, York, YO10 5DD, UK
| | - Troy L. R. Bennett
- Department of Chemistry, Imperial College London, MSRH, White City, London, W12 0BZ, UK
| | - Iain M. Grace
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | - Joseph Hamill
- Department of Chemistry, Birmingham University, Edgbaston, Birmingham, B15 2TT, UK
| | - Xintai Wang
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
- The Blackett Laboratory, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
| | - Sophie Au-Yong
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | - Ali Ismael
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | - Samuel P. Jarvis
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | - Songjun Hou
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | - Tim Albrecht
- Department of Chemistry, Birmingham University, Edgbaston, Birmingham, B15 2TT, UK
| | - Lesley F. Cohen
- The Blackett Laboratory, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK
| | - Colin Lambert
- Physics Department, Lancaster University, Lancaster, LA1 4YB, UK
| | | | - Nicholas J. Long
- Department of Chemistry, Imperial College London, MSRH, White City, London, W12 0BZ, UK
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16
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Zhang C, Li Y, Ma C, Zhang Q. Recent Progress of Organic–Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100086] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022] Open
Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology Suzhou University of Science and Technology Suzhou Jiangsu 215009 China
| | - Qichun Zhang
- Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR 999077 China
- Center of Super-Diamond and Advanced Films (COSDAF) City University of Hongkong Hong Kong SAR 999077 China
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17
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Xiong H, Ling S, Li Y, Duan F, Zhu H, Lu S, Du M. Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane. J Colloid Interface Sci 2021; 608:1126-1134. [PMID: 34735849 DOI: 10.1016/j.jcis.2021.10.126] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Revised: 10/12/2021] [Accepted: 10/21/2021] [Indexed: 01/12/2023]
Abstract
The recyclable, self-healing and easily-degradable transient electronic technology has aroused tremendous attention in flexible electronic products. However, integrating the above advantages into one single flexible electronic device is still a huge challenge. Herein, we demonstrate a flexible and recyclable bio-based memory device using fish colloid as the resistive switching layer on a polyimine substrate, which affords reliable mechanical and electrical properties under repetitive conformal deformation operation. This flexible bio-based memory device presents potential analog behaviors including memory characteristics and excitatory current response, which undergoes incremental potentiation in conductance under successive electrical pulses. Moreover, this device is expected to greatly alleviate the environmental problems caused by electronic waste. It can be decomposed rapidly in water and well recycled, which is a promising candidate for transient memories and information security. We believe that this study can provide new possibilities to the field of high-performance transient electronics and flexible resistive memory devices.
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Affiliation(s)
- Hanli Xiong
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Songtao Ling
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Fang Duan
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Han Zhu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Shuanglong Lu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
| | - Mingliang Du
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
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18
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Li Y, Qian Q, Ling S, Fan T, Zhang C, Zhu X, Zhang Q, Zhang Y, Zhang J, Yu S, Yao J, Ma C. A benzothiadiazole-containing π-conjugated small molecule as promising element for nonvolatile multilevel resistive memory device. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2020.121850] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
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19
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Zhang C, Li H, Lin S, Su Y, Zhang Q, Li Y, Wang K, Lu J. Fabrication of One-Dimensional Organic Nanofiber Networks via Electrophoretic Deposition for a Nonvolatile Memory Device. ACS APPLIED MATERIALS & INTERFACES 2020; 12:57254-57263. [PMID: 33315365 DOI: 10.1021/acsami.0c09763] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Despite many advanced growth methodologies for organic nanofibers (ONFs), the lack of efficient and scalable ONF-based film preparation technologies has long been a hindrance in their practical application in organic electronic devices. Here, a typical cathode electrophoretic deposition (C-EPD) technology was developed to controllably produce ONFs and their corresponding thin films. Using the solvent effect and an external electric field force during the C-EPD process, a one-dimensional ONF network was formed, which exhibits compact molecular packing and superior optoelectronic properties in the thin-film state. Prototype sandwich-structure memory devices based on these ONF films exhibited a binary nonvolatile memory performance significantly superior than that of the bulk materials. This study provides an efficient and scalable ONF fabrication technology for high-performance electronic devices in various potential applications.
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Affiliation(s)
- Cheng Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
| | - Shixin Lin
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
| | - Yanna Su
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
| | - Qijian Zhang
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P. R. China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Kuaibing Wang
- Jiangsu Key Laboratory of Pesticide Sciences, Department of Chemistry, College of Science, Nanjing Agricultural University, Nanjing 210095, P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, P. R. China
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20
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Liu Q, Lu JF, Jin LX. Effect of nitro substitution of azo-chalcone derivatives nano film on electrical memory properties. INORG NANO-MET CHEM 2020. [DOI: 10.1080/24701556.2020.1844236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- Quan Liu
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
| | - Jiu-Fu Lu
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
| | - Ling-Xia Jin
- Shaanxi Province Key Laboratory of Catalysis, College of Chemical and Environment Science, Shaanxi University of Technology, Hanzhong, P.R. China
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21
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Synthesis, crystal structures, optoelectronic properties and resistive memory application of π-conjugated heteroaromatic molecules. Tetrahedron 2020. [DOI: 10.1016/j.tet.2020.131471] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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22
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Park CJ, Han SW, Shin MW. Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM). ACS APPLIED MATERIALS & INTERFACES 2020; 12:32131-32142. [PMID: 32551480 DOI: 10.1021/acsami.0c06633] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In oxide-based RRAMs using reactive electrodes such as Al, the properties of spontaneously formed interfacial layers are critical factors in determining the resistive switching (RS) performance and reliability. This interfacial layer can provide the beneficial function of oxygen reservoir and series resistance, but is very labile and prone to deterioration, causing fatal reliability problems. Moreover, there are technical difficulties in manipulating and improving the functional interfacial layer due to the various interaction dynamics near the interface and the unstable thermodynamic properties of Al. In this work, laser-assisted interface engineering, which allows exquisite manipulation of the labile interfacial layer, is proposed to improve the reliability and performance of Al/ZnO/Al RRAMs. In addition to photothermal and photochemical effects, the proposed laser process enables fine control over out-diffusions of Al atoms in the vicinity of the ZnO/Al interface, forming a robust interfacial layer with a uniform morphology and abundant oxygen Frenkel pairs. This laser-engineered interfacial layer increases the RHRS/RLRS ratio by over 100-fold and reduces RHRS variation with improved oxygen reservoir ability. It also appears to reduce leakage current and power consumption by acting as a stable series resistance. The correlation between structural and stoichiometric properties of the functional interfacial layer and the performance and reliability of the RRAM is explicated. The results suggest that laser-assisted interface engineering can be one of the most promising methods to implement highly reliable, high-performance Al/ZnO/Al RRAMs.
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Affiliation(s)
- Chul Jin Park
- School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea
| | - Seung Woo Han
- School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea
| | - Moo Whan Shin
- School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea
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23
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Guo C, Zhang Q, Li H, Lu J. Solvent Vapor Annealing Upgraded Orderly Intermolecular Stacking and Crystallinity to Enhance Memory Device Performance. Chem Asian J 2020; 15:2493-2498. [DOI: 10.1002/asia.202000577] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2020] [Revised: 06/08/2020] [Indexed: 11/07/2022]
Affiliation(s)
- Chunxiu Guo
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Qijian Zhang
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Hua Li
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of ChemistryChemical Engineering and Materials ScienceCollaborative Innovation Center of Suzhou Nano Science and TechnologySoochow University Suzhou 215123 P. R. China
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24
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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