1
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Ghosh A, Yadav SNS, Tsai MH, Dubey A, Lin CT, Gwo S, Yen TJ. Superior Visible Photoelectric Response with Au/Cu 2NiSnS 4 Core-Shell Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2024; 16:12033-12041. [PMID: 38407045 PMCID: PMC10921381 DOI: 10.1021/acsami.3c17462] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 02/17/2024] [Accepted: 02/19/2024] [Indexed: 02/27/2024]
Abstract
The incorporation of plasmonic metal nanostructures into semiconducting chalcogenides in the form of core-shell structures provides a promising approach to enhancing the performance of photodetectors. In this study, we combined Au nanoparticles with newly developed copper-based chalcogenides Cu2NiSnS4 (Au/CNTS) to achieve an ultrahigh optoelectronic response in the visible regime. The high-quality Au/CNTS core-shell nanocrystals (NCs) were synthesized by developing a unique colloidal hot-injection method, which allowed for excellent control over sizes, shapes, and elemental compositions. The as-synthesized Au/CNTS hybrid core-shell NCs exhibited enhanced optical absorption, carrier extraction efficiency, and improved photosensing performance owing to the plasmonic-induced resonance energy transfer effect of the Au core. This effect led to a significant increase in the carrier density of the Au/CNTS NCs, resulting in a measured responsivity of 1.2 × 103 AW-1, a specific detectivity of 6.2 × 1011 Jones, and an external quantum efficiency of 3.8 × 105 % at an incident power density of 318.5 μW cm-2. These results enlighten a new era in the development of plasmonic core-shell nanostructure-based visible photodetectors.
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Affiliation(s)
- Anima Ghosh
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 106, Taiwan R.O.C
- Department
of Physics, School of Sciences and Humanities, SR University, Warangal 506371, India
| | - Shyam Narayan Singh Yadav
- Department
of Materials Science and Engineering, National
Tsing Hua University, No. 101 Section 2, Kuang Fu Road, Hsinchu
City 300, Taiwan R.O.C
| | - Ming-Hsiu Tsai
- Graduate
Institute of Electronics Engineering, National
Taiwan University, Taipei 106, Taiwan, R.O.C.
| | - Abhishek Dubey
- Department
of Materials Science and Engineering, National
Tsing Hua University, No. 101 Section 2, Kuang Fu Road, Hsinchu
City 300, Taiwan R.O.C
| | - Chih-Ting Lin
- Graduate
Institute of Electronics Engineering, National
Taiwan University, Taipei 106, Taiwan, R.O.C.
| | - Shangjr Gwo
- Department
of Physics, National Tsing Hua University, Hsinchu City 300, Taiwan R.O.C
- Research
Centre for Applied Science, Academia Sinica, Taipei 115, Taiwan R.O.C
| | - Ta-Jen Yen
- Department
of Materials Science and Engineering, National
Tsing Hua University, No. 101 Section 2, Kuang Fu Road, Hsinchu
City 300, Taiwan R.O.C
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2
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Ma H, Wang Y, Zhang Z, Liu J, Yu Y, Zuo S, Li B. A superior ternary Z-scheme photocatalyst of Bi/Black Phosphorus nanosheets/P-doped BiOCl containing interfacial P-P bond and metallic mediator for H 2O 2 production and RhB degradation. CHEMOSPHERE 2023; 330:138717. [PMID: 37076083 DOI: 10.1016/j.chemosphere.2023.138717] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 04/01/2023] [Accepted: 04/16/2023] [Indexed: 05/03/2023]
Abstract
Photocatalytic performance is significantly influenced by the efficiency of photogenerated electron-hole pairs separation and transfer. In this paper, rational designed Z-scheme Bi/Black Phosphorus Nanosheets/P-doped BiOCl (Bi/BPNs/P-BiOCl) nanoflower photocatalyst was synthesized by a facile in-situ reduction process. The interfacial P-P bond between Black phosphorus nanosheets (BPNs) and P-doped BiOCl (P-BiOCl) was investigated by the XPS spectrum. The Bi/BPNs/P-BiOCl photocatalysts exhibited enhanced photocatalytic performance for H2O2 production and RhB degradation. The optimally modified photocatalyst (Bi/BPNs/P-BiOCl-20) showed an excellent photocatalytic H2O2 generation rate of 4.92 mM/h and RhB degradation rate of 0.1169 min-1 under simulated sunlight irradiation, which was 1.79 times and 1.25 times greater than the P-P bond free Bi/BPNs/BiOCl-20. The mechanism was investigated through charge transfer route, radical capture experiments, and band gap structure analysis, indicating that the formation of Z-scheme heterojunctions and interfacial P-P bond not only enhances the redox potential of the photocatalyst but also facilitates the separation and migration of photogenerated electrons-holes. This work might provide a promising strategy for constructing Z-scheme 2D composite photocatalysts combining interfacial heterojunction and elemental doping engineering for efficient photocatalytic H2O2 production and organic dye pollutant degradation.
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Affiliation(s)
- Hecheng Ma
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
| | - Yimeng Wang
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
| | - Ziang Zhang
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
| | - Jianjun Liu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China.
| | - Yingchun Yu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
| | - Shengli Zuo
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
| | - Baoshan Li
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, PR China
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3
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Chang TY, Chen PL, Chen PS, Li WQ, Li JX, He MY, Chao JT, Ho CH, Liu CH. Van der Waals Heterostructure Photodetectors with Bias-Selectable Infrared Photoresponses. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32665-32674. [PMID: 35797527 DOI: 10.1021/acsami.2c06088] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A bias-selectable photodetector, which can sense the wavelength of interest by tuning the polarity of applied bias, is useful for target discrimination and identification applications. So far, those detectors are generally based on the back-to-back photodiode configuration via exploiting epitaxial semiconductors as optoelectronic materials, which inevitably lead to high fabrication costs and complex device architectures. Here, we demonstrate that our band-engineered van der Waals heterostructures can be applied as bias-selectable photodetectors. Our first prototypical device is mainly composed of black phosphorus (BP) and MoTe2 light absorbers sandwiching a thin MoS2 hole blocking layer. By varying the bias polarity, its spectral photoresponse can be switched between near-infrared and short-wave infrared bands, and our optoelectronic characterizations indicate that the detector can exhibit high external quantum efficiency (EQE) and fast operation speed. With this framework, we further demonstrate the detector with bias-selectable photoresponses within the mid-wave infrared band using BP/MoS2/arsenic-doped BP heterostructures and show that our developed detectors can be integrated into a single-pixel imaging system to capture dual-band infrared imaging.
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Affiliation(s)
- Tian-Yun Chang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Pei-Sin Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wei-Qing Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ming-Yuan He
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jen-Te Chao
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
| | - Chang-Hua Liu
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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4
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Chen PL, Chen Y, Chang TY, Li WQ, Li JX, Lee S, Fang Z, Li M, Majumdar A, Liu CH. Waveguide-Integrated van der Waals Heterostructure Mid-Infrared Photodetector with High Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24856-24863. [PMID: 35476925 DOI: 10.1021/acsami.2c01094] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Extending the operation wavelength of silicon photonics to the mid-infrared (mid-IR) band will significantly benefit critical application areas, including health care, astronomy, and chemical sensing. However, a major hurdle for mid-IR silicon photonics has been the lack of high-speed, high-responsivity, and low noise-equivalent power (NEP) photodetectors. Here, we demonstrate a van der Waals (vdW) heterostructure mid-IR photodetector integrated on a silicon-on-insulator (SOI) waveguide. The detector is composed of vertically stacked black phosphorus (BP)/molybdenum ditelluride (MoTe2). We measured high responsivity (up to 0.85 A/W) over a 3-4 μm spectral range, indicating that waveguide-confined light could strongly interact with vdW heterostructures on top. In addition, the waveguide-integrated detector could be modulated at high speed (>10 MHz) and its switching performance shows excellent stability. These results, together with the noise analysis, indicate that the NEP of the detector is as low as 8.2 pW/Hz1/2. This reported critical missing piece in the silicon photonic toolbox will enable the wide-spread adoption of mid-IR integrated photonic circuits.
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Affiliation(s)
- Po-Liang Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueyang Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Tian-Yun Chang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wei-Qing Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Seokhyeong Lee
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Zhuoran Fang
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Chang-Hua Liu
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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5
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Han D, Han X, Liu L, Li D, Liu Y, Liu Z, Liu D, Chen Y, Zhuo K, Sang S. Sub-ppb-Level Detection of Nitrogen Dioxide Based on High-Quality Black Phosphorus. ACS APPLIED MATERIALS & INTERFACES 2022; 14:13942-13951. [PMID: 35275490 DOI: 10.1021/acsami.2c00407] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The development of gas sensors based on two-dimensional (2D) layered materials has received lots of focus attributing to their excellent gas sensitivity. Here, a black phosphorus (BP) gas sensor device is fabricated based on high-quality few-layered BP microribbons using a facile route. Although BP is well known to oxidize in ambient conditions, energy dispersive spectroscopy (EDS) mapping manifests that the few-layered BP microribbons undergo slight oxidation and contamination during the grinding process. It is interesting that the surface and side of BP microribbons have nanoscale thin films and step-like nanoscale thin films, respectively, owing to the in-plane slip of the few-layered BP microribbons in the process of grinding, which are different from the conventional BP bulk crystals. The layered BP microribbon gas sensor demonstrated a high response to low-concentration NO2 and a very low limit of detection (LOD) of 0.4 ppb of NO2 under N2 and air conditions, which is the lowest LOD for NO2 detection reported so far. The mechanisms for excellently sensitive detection of NO2 for the BP microribbons have been investigated by first-principles calculations combined with experiment results, revealing that the sensitization mechanisms of the BP microribbon sensor are abundant nanoscale thin films, an optimum bandgap range with optimal carrier concentration, a hierarchical homojunction structure, and strong adsorption energy to NO2. In addition, the BP microribbon sensor demonstrated high selectivity to NO2, a low LOD under a high relative humidity, and good repeatability. The reported results of the BP sensor may provide great promise for improving the performance of other 2D material-based gas sensors and may expand sensing applications.
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Affiliation(s)
- Dan Han
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Xiaomei Han
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Lulu Liu
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Donghui Li
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Yan Liu
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Zhihua Liu
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Dongming Liu
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Yi Chen
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Kai Zhuo
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Shengbo Sang
- Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception, College of Information and Computer, Taiyuan University of Technology, Taiyuan 030024, China
- Key Lab of Advanced Transducers and Intelligent Control System of the Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
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6
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Jana S, Mukherjee S, Bhaktha B N S, Ray SK. Plasmonic Silver Nanoparticle-Mediated Enhanced Broadband Photoresponse of Few-Layer Phosphorene/Si Vertical Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:1699-1709. [PMID: 34932300 DOI: 10.1021/acsami.1c19309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report the superior broadband photodetection characteristics of few-layer phosphorene known as black phosphorus (BP) nanosheets integrated with silver nanoparticles (Ag NPs) using vertical heterojunctions on a Si platform. The exfoliation of BP nanosheets and preparation of an Ag NP:BP (Ag-BP) hybrid have been accomplished through environment-friendly and cost-effective chemical routes. The hybrid sample exhibits broadband light absorption with a strong plasmonic peak around ∼425 nm due to the localized surface plasmon resonance (LSPR) of Ag NPs of average size ∼6.0 nm. Spectroscopic analysis of the Ag-BP hybrid ascertains strong light-matter interactions around the LSPR band of Ag NPs. The size-dependent optical response of BP nanostructure/Si state-of-the-art broadband (300-1600 nm) photodiodes has been studied extensively. The enhancement of broadband photoresponse characteristics is demonstrated using the plasmonic Ag-BP 0D-2D hybrid nanostructure compared to pristine BP, where the peak responsivity in the former is shifted to the visible region (∼440 nm) compared to UV response (∼340 nm) of the latter. The tunable spectral responsivity with a peak value of ∼3.2 A/W (@ ∼440 nm and -5 V) for the Ag-BP/Si heterojunction device demonstrates the potential of plasmonic BP hybrids for future nanophotonic devices.
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Affiliation(s)
- Subhajit Jana
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Subhrajit Mukherjee
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Shivakiran Bhaktha B N
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
| | - Samit K Ray
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, West Bengal, India
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7
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Zeng Y, Guo Z. Synthesis and stabilization of black phosphorus and phosphorene: recent progress and perspectives. iScience 2021; 24:103116. [PMID: 34646981 PMCID: PMC8497852 DOI: 10.1016/j.isci.2021.103116] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Two-dimensional black phosphorus (BP) has triggered tremendous research interest owing to its unique crystal structure, high carrier mobility, and tunable direct bandgap. Preparation of few-layer BP with high quality and stability is very important for its related research and applications in biomedicine, electronics, and optoelectronics. In this review, the synthesis methods of BP, including the preparation of bulk BP crystal which is an important raw material for preparing few-layer BP, the popular top-down methods, and some direct growth strategies of few-layer BP are comprehensively overviewed. Then chemical ways to enhance the stability of few-layer BP are concretely introduced. Finally, we propose a selection rule of preparation methods of few-layer BP according to the requirement of specific BP properties for different applications. We hope this review would bring some insight for future researches on BP and contributes to the acceleration of BP's commercial progress.
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Affiliation(s)
- Yonghong Zeng
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zhinan Guo
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
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8
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Yang C, Wang G, Liu M, Yao F, Li H. Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors. NANOMATERIALS 2021; 11:nano11102688. [PMID: 34685129 PMCID: PMC8537528 DOI: 10.3390/nano11102688] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Revised: 10/06/2021] [Accepted: 10/08/2021] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.
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Affiliation(s)
- Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
| | - Guangcan Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
| | - Maomao Liu
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Fei Yao
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Huamin Li
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
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9
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Liu Y, Tan Y, Liu Y, Jiang X, Zhang H, Chen F. Tailored negative/positive photoresponse of BP via doping. NANOTECHNOLOGY 2021; 32:185201. [PMID: 33477126 DOI: 10.1088/1361-6528/abde62] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Black phosphorus (BP) is a promising material for photodetectors due to its excellent and broadband photoresponse. To realize a wide application of BP in photodetection, there is a continuous eagerness for new approaches to tailor photoresponse of BP for a specific purpose, such as high sensitivity and switching of negative/positive responses. Here, we demonstrate that the ion irradiation with controllable conditions can enhance the photoresponsivity of BP for two orders compared to the pristine one, and can select the positive/negative photoresponse of the BP. The range of the tailored photoresponse covers the whole optical spectrum, ranging from the visible (532 nm) to the mid-infrared (10 μm). This work shows a pathway to modulate the photoresponse of BP, which opens new possibilities for potential photonic applications.
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Affiliation(s)
- Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan, 250100, People's Republic of China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan, 250100, People's Republic of China
| | - Yanran Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan, 250100, People's Republic of China
| | - Xiantao Jiang
- Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Han Zhang
- Shenzhen Key Laboratory of Two Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandong, Jinan, 250100, People's Republic of China
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10
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Meng X, Fan C, An X, Yuan S, Jing Y, Liu Z, Sun C, Zhang Y, Zhang Z, Wang M, Zheng H, Li E. Aluminum doping effects on photoresponse characteristics of hydrothermal tin disulfide nanosheets. CrystEngComm 2021. [DOI: 10.1039/d1ce00588j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Photoresponse characteristics of Al-doped SnS2 nanosheets have been improved significantly by aluminum doping, compared to pristine SnS2. The response time was reduced by two orders of magnitude and the responsivity was increased one hundredfold.
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11
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Chang TY, Chen Y, Luo DI, Li JX, Chen PL, Lee S, Fang Z, Li WQ, Zhang YY, Li M, Majumdar A, Liu CH. Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides. NANO LETTERS 2020; 20:6824-6830. [PMID: 32816495 DOI: 10.1021/acs.nanolett.0c02818] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications in sensing, including environmental monitoring, defense, and medical diagnostics. Continued efforts are underway to realize on-chip sensors via heterogeneous integration of mid-IR emitters on a silicon photonic chip, but the uptake of such an approach is limited by the high costs and interfacial strains, associated with the processes of heterogeneous integrations. Here, the black phosphorus (BP)-based van der Waals (vdW) heterostructures are exploited as room-temperature LEDs. The demonstrated devices emit linearly polarized light, and the spectra cover the technologically important mid-IR atmospheric window. Additionally, the BP LEDs exhibit fast modulation speed and exceptional operation stability. The measured peak extrinsic quantum efficiency is comparable to the III-V/II-VI mid-IR LEDs. By leveraging the integrability of vdW heterostructures, we further demonstrate a silicon photonic waveguide-integrated BP LED.
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Affiliation(s)
- Tian-Yun Chang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueyang Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - De-In Luo
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Jia-Xin Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Liang Chen
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Seokhyeong Lee
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Zhuoran Fang
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Wei-Qing Li
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ya-Yun Zhang
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Chang-Hua Liu
- Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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