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He Y, Zhu Y, Wan Q. Oxide Ionic Neuro-Transistors for Bio-inspired Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:584. [PMID: 38607119 PMCID: PMC11013937 DOI: 10.3390/nano14070584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 03/24/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Current computing systems rely on Boolean logic and von Neumann architecture, where computing cells are based on high-speed electron-conducting complementary metal-oxide-semiconductor (CMOS) transistors. In contrast, ions play an essential role in biological neural computing. Compared with CMOS units, the synapse/neuron computing speed is much lower, but the human brain performs much better in many tasks such as pattern recognition and decision-making. Recently, ionic dynamics in oxide electrolyte-gated transistors have attracted increasing attention in the field of neuromorphic computing, which is more similar to the computing modality in the biological brain. In this review article, we start with the introduction of some ionic processes in biological brain computing. Then, electrolyte-gated ionic transistors, especially oxide ionic transistors, are briefly introduced. Later, we review the state-of-the-art progress in oxide electrolyte-gated transistors for ionic neuromorphic computing including dynamic synaptic plasticity emulation, spatiotemporal information processing, and artificial sensory neuron function implementation. Finally, we will address the current challenges and offer recommendations along with potential research directions.
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Affiliation(s)
- Yongli He
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yixin Zhu
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qing Wan
- Yongjiang Laboratory (Y-LAB), Ningbo 315202, China; (Y.H.); (Y.Z.)
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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2
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Zhang Q, Xia G, Li H, Sun Q, Gong H, Wang S. Solution-processed bilayer InGaZnO/In 2O 3thin film transistors at low temperature by lightwave annealing. NANOTECHNOLOGY 2024; 35:125202. [PMID: 38086071 DOI: 10.1088/1361-6528/ad14b5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 12/12/2023] [Indexed: 01/05/2024]
Abstract
At low temperatures about 230 °C, bilayer InGaZnO/In2O3thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In2O3bilayer TFTs with SiO2as dielectric layer show high electrical performances, such as a mobility of 7.63 cm2V-1s-1, a threshold voltage (Vth) of 3.8 V, and an on/off ratio higher than 107, which are superior to single-layer InGaZnO TFTs or In2O3TFTs. Moreover, bilayer InGaZnO/In2O3TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In2O3layer. By using high dielectric constant AlOxfilm, the InGaZnO/In2O3TFTs exhibit an improved mobility of 47.7 cm2V-1s-1. The excellent electrical performance of the solution-based InGaZnO/In2O3TFTs shows great application potential for low-cost flexible printed electronics.
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Affiliation(s)
- Qian Zhang
- School of Information Engineering, Hebei GEO University, Shijiazhuang 050031, People's Republic of China
| | - Guodong Xia
- Department of Material and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Hangyu Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Qiang Sun
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Hongyu Gong
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Sumei Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
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3
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Diao Y, Zhang Y, Li Y, Jiang J. Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:9779. [PMID: 38139625 PMCID: PMC10747618 DOI: 10.3390/s23249779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 11/30/2023] [Accepted: 12/05/2023] [Indexed: 12/24/2023]
Abstract
As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.
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Affiliation(s)
| | | | | | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
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Liu G, Xue Z, Zhang X, Liu Q, Kuang Y, He M, Xu J, Lv M, Xiu H, Zhai G, Liu D, Xia Y, Dai N, Dai M. Multifunctional Multigate One-Transistor with Thin Advanced Materials, Logic-in-Memory, and Artificial Synaptic Behaviors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55957-55964. [PMID: 37992220 DOI: 10.1021/acsami.3c10366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
The high device density and fabrication complexity have hampered the development of the electronics. The advanced designs, which could implement the functions of the circuits with higher device density but less fabrication complexity, are hence required. Meanwhile, the MoS2-based devices have recently attracted considerable attention owing to their advantages such as the ultrathin thickness. However, the MoS2-based multifunctional multigate one-transistor (MGT) designs with logic-in-memory and artificial synaptic functions have rarely been reported. Here, an MGT structure based on the MoS2 channel is proposed, with both the logic-in-memory and artificial synaptic behaviors and with more controllable processes than the manual transfer. The proposed MoS2-based MGT functions could be attributed to the semijunction mechanism and enhanced effect of the additional terminals with improved controllability. This study is the first to demonstrate that the neuromorphic computing, logic gate, and memory functions can all be achieved in a MoS2 MGT device without using any additional layers or plasticity to a transistor. The reported results provide a new strategy for developing brain-like systems and next-generation electronics using multifunctional designs and ultrathin materials.
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Affiliation(s)
- Guanyi Liu
- Department of Spine Surgery, Ningbo No. 6 Hospital, 1059 Zhongshandong Road, Ningbo, Zhejiang 315040, People's Republic of China
| | - Zhibiao Xue
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
- School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China
| | - Xiaoyang Zhang
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu 215123, China
| | - Qitao Liu
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Yongbo Kuang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Meng He
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
| | - Ji Xu
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Mingming Lv
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Hao Xiu
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Gangpeng Zhai
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu 215123, China
| | - Deyu Liu
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
| | - Yang Xia
- Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Mingzhi Dai
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China
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5
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Chen KT, Shih LC, Mao SC, Chen JS. Mimicking Pain-Perceptual Sensitization and Pattern Recognition Based on Capacitance- and Conductance-Regulated Neuroplasticity in Neural Network. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9593-9603. [PMID: 36752572 DOI: 10.1021/acsami.2c20297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Neuromorphic computing, inspired by the biological neuronal system, is a high potential approach to substantially alleviate the cost of computational latency and energy for massive data processing. Artificial synapses with regulable synaptic weights are the basis of neuromorphic computation, providing an efficient and low-power system to overcome the constraints of the von Neumann architecture. Here, we report an ITO/TaOx-based synaptic capacitor and transistor. With the drift motion of mobile-charged ions in the TaOx, the capacitance and channel conductance can be tuned to exhibit synaptic weight modulation. Robust stability in the cycle-to-cycle (C2C) variation is found in capacitance and conductance potentiation/depression weight updating of 0.9 and 1.8%, respectively. Simulation results show a higher classification accuracy of handwritten digit recognition (95%) in capacitance synapses than that in conductance synapses (84%). Besides, the synaptic capacitor consumes much less energy than the synaptic transistor. Moreover, the ITO/TaOx-based capacitor successfully emulates the pain-perceptual sensitization on top of the superior performance, indicating its promising potential in applying the capacitive neural network.
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Affiliation(s)
- Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Shi-Cheng Mao
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
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6
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Kim S, Yoo H. Recent Progress in Thin-Film Transistors toward Digital, Analog, and Functional Circuits. MICROMACHINES 2022; 13:2258. [PMID: 36557558 PMCID: PMC9783209 DOI: 10.3390/mi13122258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Revised: 12/11/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. Despite these advantages, most efforts for thin-film transistors still remain at the level of unit devices, so the circuit level for practical use needs to be further developed. In this regard, this review revisits digital and analog thin-film circuits using carbon nanotubes (CNTs), organic electrochemical transistors (OECTs), organic semiconductors, metal oxides, and two-dimensional materials. This review also discusses how to integrate thin-film circuits at the unit device level and some key issues such as metal routing and interconnection. Challenges and opportunities are also discussed to pave the way for developing thin-film circuits and their practical applications.
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7
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Fu YM, Li H, Wei T, Huang L, Hidayati F, Song A. Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:2933-2942. [PMID: 35782154 PMCID: PMC9245437 DOI: 10.1021/acsaelm.2c00395] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 04/25/2022] [Indexed: 05/17/2023]
Abstract
Temperature has always been considered as an essential factor for almost all kinds of semiconductor-based electronic components. In this work, temperature-dependent synaptic plasticity behaviors, which are mimicked by the indium-gallium-zinc oxide thin-film transistors gated with sputtered SiO2 electrolytes, have been studied. With the temperature increasing from 303 to 323 K, the electrolyte capacitance decreases from 0.42 to 0.11 μF cm-2. The mobility increases from 1.4 to 3.7 cm2 V-1 s-1, and the threshold voltage negatively shifts from -0.23 to -0.51 V. Synaptic behaviors under both a single pulse and multiple pulses are employed to study the temperature dependence. With the temperature increasing from 303 to 323 K, the post-synaptic current (PSC) at the resting state increases from 1.8 to 7.3 μA. Under a single gate pulse of 1 V and 1 s, the PSC signal altitude and the PSC retention time decrease from 2.0 to 0.7 μA and 5.1 × 102 to 2.5 ms, respectively. A physical model based on the electric field-induced ion drifting, ionic-electronic coupling, and gradient-coordinated ion diffusion is proposed to understand these temperature-dependent synaptic behaviors. Based on the experimental data on individual transistors, temperature-modulated pattern learning and memorizing behaviors are conceptually demonstrated. The in-depth investigation of the temperature dependence helps pave the way for further electrolyte-gated transistor-based neuromorphic applications.
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Affiliation(s)
- Yang Ming Fu
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Hu Li
- Shandong
Technology Center of Nanodevices and Integration, State Key Laboratory
of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250101, China
| | - Tianye Wei
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Long Huang
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Faricha Hidayati
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
| | - Aimin Song
- Department
of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.
- Shandong
Technology Center of Nanodevices and Integration, State Key Laboratory
of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250101, China
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8
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Ren J, Shen H, Liu Z, Xu M, Li D. Artificial Synapses Based on WSe 2 Homojunction via Vacancy Migration. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21141-21149. [PMID: 35481365 DOI: 10.1021/acsami.2c01162] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Artificial synapses based on two-dimensional (2D) transition metal dichalcogenides (TMDs) materials have attracted wide attention to boost the development of neuromorphic computing in recent years. Various structures have been adopted to build 2D-material-based artificial synapses. In lateral- and vertical-structures, the realization of synaptic function mainly results from the migration of the defects and vacancies, which requires the strong ion diffusion ability. Here, we successfully demonstrate an artificial synapse based on lateral WSe2 homojunction. The migration of Se vacancies from the thin region to the thick region has been promoted by applying negative gate voltage, resulting in n-type doping in the thick region due to the accumulation of Se vacancies, which would diminish the barrier width of the metal-semiconductor junctions in the thick region. Consequently, the transformation from a high-resistance state (HRS) to a low-resistance state (LRS) is achieved. Significantly, our device can efficiently emulate the biological synaptic functions with a large synaptic weight change. Additionally, the transition from short-term memory (STM) to long-term memory (LTM) can be accomplished with a simpler structure, which would be beneficial to realizing the large-scale integration of transistor-based artificial synapses.
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Affiliation(s)
- Junwen Ren
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hongzhi Shen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zeyi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ming Xu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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9
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Bolat S, Agiannis E, Yang SC, Futscher MH, Aribia A, Shorubalko I, Romanyuk YE. Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors. FRONTIERS IN ELECTRONICS 2022. [DOI: 10.3389/felec.2021.804474] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.
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10
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Yang JM, Jung YK, Lee JH, Kim YC, Kim SY, Seo S, Park DA, Kim JH, Jeong SY, Han IT, Park JH, Walsh A, Park NG. Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption. NANOSCALE HORIZONS 2021; 6:987-997. [PMID: 34668915 DOI: 10.1039/d1nh00452b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Flexible and transparent artificial synapses with extremely low energy consumption have potential for use in brain-like neuromorphic electronics. However, most of the transparent materials for flexible memristive artificial synapses were reported to show picojoule-scale high energy consumption with kiloohm-scale low resistance, which limits the scalability for parallel operation. Here, we report on a flexible memristive artificial synapse based on Cs3Cu2I5 with energy consumption as low as 10.48 aJ (= 10.48 × 10-18 J) μm-2 and resistance as high as 243 MΩ for writing pulses. Interface-type resistive switching at the Schottky junction between p-type Cu3Cs2I5 and Au is verified, where migration of iodide vacancies and asymmetric carrier transport owing to the effective hole mass is three times heavier than effective electron mass are found to play critical roles in controlling the conductance, leading to high resistance. There was little difference in synaptic weight updates with high linearity and 250 states before and after bending the flexible device. Moreover, the MNIST-based recognition rate of over 90% is maintained upon bending, indicative of a promising candidate for highly efficient flexible artificial synapses.
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Affiliation(s)
- June-Mo Yang
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Young-Kwang Jung
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
| | - Ju-Hee Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Yong Churl Kim
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - So-Yeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Dong-Am Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Jeong-Hyeon Kim
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Se-Yong Jeong
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - In-Taek Han
- Samsung Advanced Institute of Technology (SAIT), Suwon 443-803, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.
| | - Aron Walsh
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea.
- Department of Materials, Imperial College London, London SW7 2AZ, UK
| | - Nam-Gyu Park
- School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
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11
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Chen Y, Wang H, Yao Y, Wang Y, Ma C, Samorì P. Synaptic Plasticity Powering Long-Afterglow Organic Light-Emitting Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2103369. [PMID: 34369012 DOI: 10.1002/adma.202103369] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Long-lasting luminescence in optoelectronic devices is highly sought after for applications in optical data storage and display technology. While in light-emitting diodes this is achieved by exploiting long-afterglow organic materials as active components, such a strategy has never been pursued in light-emitting transistors, which are still rather unexplored and whose technological potential is yet to be demonstrated. Herein, the fabrication of long-afterglow organic light-emitting transistors (LAOLETs) is reported whose operation relies on an unprecedented strategy based on a photoinduced synaptic effect in an inorganic indium-gallium-zinc-oxide (IGZO) semiconducting channel layer, to power a persistent electroluminescence in organic light-emitting materials. Oxygen vacancies in the IGZO layer, produced by irradiation at λ = 312 nm, free electrons in excess yielding to a channel conductance increase. Due to the slow recombination kinetics of photogenerated electrons to oxygen vacancies in the channel layer, the organic material can be fueled by postsynaptic current and displays a long-lived light-emission (hundreds of seconds) after ceasing UV irradiation. As a proof-of-concept, the LAOLETs are integrated in active-matrix light-emitting arrays operating as visual UV sensors capable of long-lifetime green-light emission in the irradiated regions.
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Affiliation(s)
- Yusheng Chen
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Hanlin Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Yifan Yao
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Ye Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Chun Ma
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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12
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Liu Q, Zhao C, Zhao T, Liu Y, Mitrovic IZ, Xu W, Yang L, Zhao CZ. Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18961-18973. [PMID: 33848133 DOI: 10.1021/acsami.0c20947] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The ecofriendly combustion synthesis (ECS) and self-combustion synthesis (ESCS) have been successfully utilized to deposit high-k aluminum oxide (AlOx) dielectrics at low temperatures and applied for aqueous In2O3 thin-film transistors (TFTs) accordingly. The ECS and ESCS processes facilitate the formation of high-quality dielectrics at lower temperatures compared to conventional methods based on an ethanol precursor, as confirmed by thermal analysis and chemical composition characterization. The aqueous In2O3 TFTs based on ECS and ESCS-AlOx show enhanced electrical characteristics and counterclockwise transfer-curve hysteresis. The memory-like counterclockwise behavior in the transfer curve modulated by the gate bias voltage is comparable to the signal modulation by the neurotransmitters. ECS and ESCS transistors are employed to perform synaptic emulation; various short-term and long-term memory functions are emulated with low operating voltages and high excitatory postsynaptic current levels. High stability and reproducibility are achieved within 240 pulses of long-term synaptic potentiation and depression. The synaptic emulation functions achieved in this work match the demand for artificial neural networks (ANN), and a multilayer perceptron (MLP) is developed using an ECS-AlOx synaptic transistor for image recognition. A superior recognition rate of over 90% is achieved based on ECS-AlOx synaptic transistors, which facilitates the implementation of the metal-oxide synaptic transistor for future neuromorphic computing via an ecofriendly route.
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Affiliation(s)
- Qihan Liu
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Tianshi Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Yina Liu
- Department of Applied Mathematics, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Ivona Z Mitrovic
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
| | - Wangying Xu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, Shenzhen 518061, China
| | - Li Yang
- Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
| | - Ce Zhou Zhao
- Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 72Z, U.K
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Yang Q, Yang H, Lv D, Yu R, Li E, He L, Chen Q, Chen H, Guo T. High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8672-8681. [PMID: 33565852 DOI: 10.1021/acsami.0c22271] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read-write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 106, well off state as low as nearly 10-12 A, and low operation voltage of -3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.
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Affiliation(s)
- Qian Yang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Zhicheng College, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huihuang Yang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Dongxu Lv
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y. Solution-processed electronics for artificial synapses. MATERIALS HORIZONS 2021; 8:447-470. [PMID: 34821264 DOI: 10.1039/d0mh01520b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.
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Affiliation(s)
- Kuakua Lu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, P. R. China.
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15
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Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing. Sci Rep 2020; 10:16664. [PMID: 33028862 PMCID: PMC7542445 DOI: 10.1038/s41598-020-73705-w] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2020] [Accepted: 09/17/2020] [Indexed: 12/17/2022] Open
Abstract
The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and input signals from each other. Appropriate choice of the dielectric is crucial in achieving a wide range of operation frequencies in these devices. Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. Fabricated devices, yielding synaptic response for all audio frequencies (20 Hz to 20 kHz), are employed in an acoustic response system to show the potential for future research in neuro-acoustic signal processing with printed oxide electronics.
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