Vacuum-Deposited Blue Inorganic Perovskite Light-Emitting Diodes

Efficient and stable hybrid perovskite-organic light-emitting diodes with external quantum efficiency exceeding 40 per cent

Light-emitting diodes (LEDs) based on perovskite semiconductor materials with tunable emission wavelength in visible light range as well as narrow linewidth are potential competitors among current light-emitting display technologies, but still suffer from severe instability driven by electric field. Here, we develop a stable, efficient and high-color purity hybrid LED with a tandem structure by combining the perovskite LED and the commercial organic LED technologies to accelerate the practical application of perovskites. Perovskite LED and organic LED with close photoluminescence peak are selected to maximize photon emission without photon reabsorption and to achieve the narrowed emission spectra. By designing an efficient interconnecting layer with p-type interface doping that provides good opto-electric coupling and reduces Joule heating, the resulting green emitting hybrid LED shows a narrow linewidth of around 30 nm, a peak luminance of over 176,000 cd m-2, a maximum external quantum efficiency of over 40%, and an operational half-lifetime of over 42,000 h.

Strategic Buried Defect Passivation of Perovskite Emitting Layers by Guanidinium Chloride for High-Performance Pure Blue Perovskite Light Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) show promise for high-definition displays due to their exceptional electroluminescent properties. However, the performance of pure blue PeLEDs is hindered by the unfavorable ionic behavior of halides and the presence of defective antisites in blue-emitting perovskite materials. An unstable buried interface between charge transport layers and the perovskite emitting layer is a major issue that limits carrier transport and recombination behavior in PeLEDs. In this study, effective buried defect passivation of pure blue perovskite emitting layers by introducing guanidinium chloride (GACl) as a bottom-passivating layer is demonstrated. The GACl bottom layer not only passivates the point defects present at the buried interface but also provides chloride anions to suppress ion migration and halide vacancy formation. Along with the defect passivation, GACl also enforces phase purity of 2D layered structure in the perovskite emitting layers to improve crystallinity and optoelectronic properties. As a result, the PeLEDs with high brightness (1200 cd m-2) and excellent external quantum efficiency (6.61%) are achieved at a spectrally stable pure blue electroluminescence at 471 nm (band width = 17.63 nm). This study offers insights into the straightforward way for effective buried passivation for preparing high-performance PeLEDs.

Thermally Evaporated Blue Quasi-Two-Dimensional Perovskite Light-Emitting Diodes via Low-Dimensional Phase Distribution Arrangement

Perovskite light-emitting diodes (PeLEDs) have shown great potential in the display domain due to their wide color gamut, narrow emission, and low cost. In current PeLEDs manufacturing methods, thermal evaporation shows great competitiveness with its advantages of easy patterning, production line compatibility, and solvent-free processability. However, the development of thermally evaporated blue PeLEDs is limited by their low radiative recombination rate and high defect density. Herein, we report high-performance thermally evaporated blue PeLEDs by in situ introduction of ammonium cations. We confirm that phenethylammonium (PEA+) has lower adsorption energy, which significantly reduces the low-n phases in a quasi-2D perovskite film. The energy transfer rate is also promoted by the PEA+ addition. As a result, we fabricate blue PeLEDs with an external quantum efficiency of 1.56% by thermal evaporation. The strategy of arranging phase distribution could benefit the industrialization of full-color PeLEDs.

In Situ Hydrolysis of Phosphate Enabling Sky-Blue Perovskite Light-Emitting Diode with EQE Approaching 16.32

The performance of blue perovskite light-emitting diodes (PeLEDs) lags behind the green and red counterparts owing to high trap density and undesirable red shift of the electroluminescence spectrum under operation conditions. Organic molecular additives were employed as passivators in previous reports. However, most commonly have limited functions, making it challenging to effectively address both efficiency and stability issues simultaneously. Herein, we reported an innovatively dynamic in situ hydrolysis strategy to modulate quasi-2D sky-blue perovskites by the multifunctional passivator phenyl dichlorophosphate that not only passivated the defects but also underwent in situ hydrolysis reaction to stabilize the emission. Moreover, hydrolysis products were beneficial for low-dimensional phase manipulation. Eventually, we obtained high-performance sky-blue PeLEDs with a maximum external quantum efficiency (EQE) of 16.32% and an exceptional luminance of 5740 cd m-2. More importantly, the emission peak of devices located at 485 nm remained stable under different biases. Our work signified the significant advancement toward realizing future applications of PeLEDs.

High-Efficiency and Emission-Tunable Inorganic Blue Perovskite Light-Emitting Diodes Based on Vacuum Deposition

The fabrication of perovskite light-emitting diodes (PeLEDs) with vacuum deposition shows great potential and commercial value in realizing large-area display panel manufacturing. However, the electroluminescence (EL) performance of vacuum-deposited PeLEDs still lags behind the counterparts fabricated by solution process, especially in the field of blue PeLEDs. Here, the fabrication of high-quality CsPbBr3- x Clx film through tri-source co-evaporation is reported to achieve high photoluminescence quantum yield (PLQY). Compared with the conventional traditional dual-source co-evaporation, the tri-source co-evaporation method allows for freely adjustable elemental ratios, enabling the introduction of the lattice-matched Cs4 Pb(Br/Cl)6 phase with the quantum-limited effect into the inorganic CsPb(Br/Cl)3 emitter. By adjusting the phase distribution, the surface defects of the emitter can be effectively reduced, leading to better blue emission and film quality. Further, the effects of Cs/Pb ratio and Br/Cl ratio on the PLQY and carrier recombination dynamics of perovskite films are investigated. By optimizing the deposition rate of each precursor source, spectrally stable blue PeLEDs are achieved with tunable emission ranging from 468 to 488 nm. Particularly, the PeLEDs with an EL peak at 488 nm show an external quantum efficiency (EQE) of 4.56%, which is the highest EQE value for mixed-halide PeLEDs fabricated by vacuum deposition.

Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.

Efficient sky-blue cesium lead bromide light-emitting diodes with enhanced stability via synergistic interfacial induction and polymer scaffold inhibition

All inorganic CsPbX3 perovskite has aroused broad interests in building efficient light-emitting devices with wide color gamut and flexible fabrication process. So far, the realization of high-performance blue perovskite light-emitting devices (PeLEDs) is still a critical challenge. Herein, we propose an interfacial induction strategy to generate low-dimensional CsPbBr3 with sky blue emission by employing γ-aminobutyric acid (GABA) modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The interaction between GABA and Pb2+ inhibited the formation of bulk CsPbBr3 phase. Further assisted by the polymer networks, the sky-blue CsPbBr3 film exhibited much improved stability under both photoluminescence and electrical excitation. This can be ascribed to the scaffold effect and the passivation function of the polymer. Consequently, the obtained sky-blue PeLEDs exhibited an average external quantum efficiency (EQE) of 5.67% (maximum of 7.21%) with a maximum brightness of 3308 cd/m2 and a working lifespan reaching 0.41 h. The strategy in this work provides a new opportunity for exploitation the full potential of blue PeLEDs towards application in lighting and display devices.

All-Thermally Evaporated Blue Perovskite Light-Emitting Diodes for Active Matrix Displays

With the rapid progress of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of active matrix PeLED displays (AM-PeLEDs) is gaining increasing attention. However, the integration of high-resolution PeLED arrays with thin-film transistor backplanes remains a significant challenge for conventional spin-coating techniques. Here, the demonstration of large-area, blue-emitting AM-PeLEDs are demonstrated using a vacuum deposition technique, which is regarded as the most effective route for organic light-emitting diode displays. By the introduction of an in situ passivation strategy, the defects-related nonradiative recombination is largely suppressed, which leads to an improved photoluminescence quantum yield of vapor-deposited blue-emitting perovskites. The as-prepared blue PeLEDs exhibit a peak external quantum efficiency of 2.47% with pure-blue emission at 475 nm, which represents state-of-the-art performance for vapor-deposited pure-blue PeLEDs. Benefiting from the excellent uniformity and compatibility of thermal evaporation, the 6.67-inch blue-emitting AM-PeLED display with a high resolution of 394 pixels per inch is successfully demonstrated. The demonstration of blue-emitting AM-PeLED display represents a crucial step toward full-color perovskite display technology.

Microwave-Assisted Rapid Substitution of Ti for Zr to Produce Bimetallic (Zr/Ti)UiO-66-NH2 with Congenetic "Shell-Core" Structure for Enhancing Photocatalytic Removal of Nitric Oxide

Efficient nitric oxide (NO) removal without nitrogen dioxide (NO₂ ) emission is desired for the control of air pollution. Herein, a series of (Zr/Ti)UiO-66-NH₂ with congenetic shell-core structure, denoted as Ti-UION, are rapidly synthesized by microwave-assisted post-synthetic modification for NO removal. The optimal Ti-UION (i.e., 2.5Ti-UION) exhibits the highest activity of 80.74% without NO₂ emission with moisture, which is 21.65% greater than that of the UiO-66-NH₂ . The NO removal efficiency of 2.5Ti-UION further increases to 95.92% without photocatalyst deactivation under an anhydrous condition. This is because selectively produced NO₂ in photocatalysis is completely adsorbed into micropores, refreshing active sites for subsequent reaction. In addition, the enhanced photocatalytic activity after Ti substitution is due to the presence of Ti electron acceptor, the potential difference between the shell and core of Ti-UION crystal, and the high conductivity of TiO units. Additionally, the improved adsorption of gas molecules not only favors NO oxidation, but also avoids the emission of NO₂ . This work provides a feasible strategy for rapid metal substitution in metal-organic frameworks and insights into enhanced NO photodegradation.

The Synergy of the Buried Interface Surface Energy and Temperature for Thermal Evaporated Perovskite Light-Emitting Diodes

Multisource coevaporation is such a promising method for the preparation of perovskite films. However, there is limited research about the effects of the buried interface on thermal-evaporated perovskite light-emitting diodes (PeLEDs). In this study, the effects of buried interfaces on thermal-evaporated all-inorganic perovskite films are systematically investigated. It is found that the low-surface-energy buried interface promotes the formation of columnar grain by suppressing heterogeneous nucleation, and functional groups on the high-surface-energy interface have a significant effect on the actual element ratio of the film. The substrate temperature can affect the nucleation and film-formation kinetics of the columnar grains. As a result of the synergistic strategy, a peak external quantum efficiency (EQE) of 8.6% is achieved in the green PeLEDs with a stable emission peak at 516 nm, which is among the best thermal-evaporated PeLEDs reported. This work provides an insight into the preparation of perovskites by thermal evaporation and builds the groundwork for future studies.

In-situ growth of low-dimensional perovskite-based insular nanocrystals for highly efficient light emitting diodes

Regulation of perovskite growth plays a critical role in the development of high-performance optoelectronic devices. However, judicious control of the grain growth for perovskite light emitting diodes is elusive due to its multiple requirements in terms of morphology, composition, and defect. Herein, we demonstrate a supramolecular dynamic coordination strategy to regulate perovskite crystallization. The combined use of crown ether and sodium trifluoroacetate can coordinate with A site and B site cations in ABX₃ perovskite, respectively. The formation of supramolecular structure retard perovskite nucleation, while the transformation of supramolecular intermediate structure enables the release of components for slow perovskite growth. This judicious control enables a segmented growth, inducing the growth of insular nanocrystal consist of low-dimensional structure. Light emitting diode based on this perovskite film eventually brings a peak external quantum efficiency up to 23.9%, ranking among the highest efficiency achieved. The homogeneous nano-island structure also enables high-efficiency large area (1 cm²) device up to 21.6%, and a record high value of 13.6% for highly semi-transparent ones.

Temperature-Dependent Amplified Spontaneous Emission in CsPbBr3 Thin Films Deposited by Single-Step RF-Magnetron Sputtering

Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr₃ films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm²), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties.

Vacuum-Vapor-Deposited 0D/3D All-Inorganic Perovskite Composite Films toward Low-Threshold Amplified Spontaneous Emission and Lasing

Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO₂ substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm^-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr₃ phase enabled by the incorporation of the 0D Cs₄ PbBr₆ phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm^-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.

Stability of Perovskite Light-Emitting Diodes: Existing Issues and Mitigation Strategies Related to Both Material and Device Aspects

Metal halide perovskites combine excellent electronic and optical properties, such as defect tolerance and high photoluminescence efficiency, with the benefits of low-cost, large-area, solution-based processing. Composition- and dimension-tunable properties of perovskites have already been utilized in bright and efficient light-emitting diodes (LEDs). At the same time, there are still great challenges ahead to achieving operational and spectral stability of these devices. In this review, the origins of instability of perovskite materials, and reasons for their degradation in LEDs are considered. Then, strategies for improving the stability of perovskite materials are reviewed, such as compositional engineering, dimensionality control, defect passivation, suitable encapsulation matrices, and fabrication of core/shell perovskite nanocrystals. For improvement of the operational stability of perovskite LEDs, the use of inorganic charge-transport layers, optimization of charge balance, and proper thermal management are considered. The review is concluded with a detailed account of the current challenges and a perspective on the key approaches and opportunities on how to reach the goal of stable, bright, and efficient perovskite LEDs.

High-Throughput Synthesis of Thin Films for the Discovery of Energy Materials: A Perspective

Thin films are an integral part of many electronic and optoelectronic devices. They also provide an excellent platform for material characterization. Therefore, strategies for the fabrication of thin films are constantly developed and have significantly benefited from the advent of high-throughput synthesis (HTS) platforms. This perspective summarizes recent advances in HTS of thin films from experimentalists’ point of view. The work analyzes general strategies of HTS and then discusses their use in developing new energy materials for applications that rely on thin films, such as solar cells, light-emitting diodes, batteries, superconductors, and thermoelectrics. The perspective also summarizes some key challenges and opportunities in the HTS of thin films.

Enriched-Bromine Surface State for Stable Sky-Blue Spectrum Perovskite QLEDs With an EQE of 14.6

Halogen vacancies are of great concern in blue-emitting perovskite quantum-dot light-emitting diodes because they affect their efficiency and spectral shift. Here, an enriched-bromine surface state is realized using a facile strategy that employs a PbBr₂ stock solution for anion exchange based on Cd-doped perovskite quantum dots. It is found that the doped Cd ions are expected to reduce the formation energy of halogen vacancies filled by the external bromine ions, and the excess free bromine ions in solution are enriched in the surface by anchoring with halogen vacancies as sites, accompanied with the shedding of surface long-chain ligands during the anion exchange process, resulting in a Br-rich and "neat" surface. Moreover, the surface state exhibits good passivation of the surface defects of the controlled perovskite QDs and simultaneously increases the exciton binding energy, leading to excellent optical properties and stability. Finally, the sky-blue emitting perovskite quantum-dot light-emitting diodes (QLEDs) (490 nm) are conducted with a record external quantum efficiency of 14.6% and current efficiency of 19.9 cd A^-1 . Meanwhile, the electroluminescence spectra exhibit great stability with negligible shifts under a constant operating voltage from 3 to 7 V. This strategy paves the way for improving the efficiency and stability of perovskite QLEDs.

Dimensionality Controls Anion Intermixing in Electroluminescent Perovskite Heterojunctions

Metal halide perovskites have emerged as a promising group of materials for optoelectronic applications such as photovoltaics, light emission, and photodetectors. So-far, in particular, the stability of light-emitting devices is limited, which is in part attributed to the intrinsic ionic conductivity of these materials. High-performance devices inevitably contain heterojunctions similar to other optoelectronic devices based on oxide perovskites, II-VI, or III-V group semiconductors. To enable efficient heterojunctions, ion exchange at the interface between different layers should be controlled. Herein, we report a method that enables to control and monitor the extent of anion intermixing between solution-processed lead bromide and vacuum-deposited lead chloride perovskite films. Taking advantage of the ability to fine tune the layer thicknesses of the vacuum-deposited films, we systematically study the effect of film thickness on anionic intermixing. Using these multiple layers, we prepare proof of principle light-emitting devices exhibiting green and blue electroluminescence.

Efficient all-inorganic red perovskite light-emitting diodes with dual-interface-modified perovskites by vapor deposition

Interface engineering has been extensively used in perovskite light-emitting diodes (PeLEDs), which proves to be an effective and intelligent approach for surface defect passivation. However, the existing passivation strategy is restricted to the solution process, which results in poor compatibility with vapor-deposited PeLEDs and moderate controllability. Here, we propose a dual-interface modification strategy to facilitate the performance improvement of vapor-deposited all-inorganic red PeLEDs. An ultrathin phenylethanamine bromide (PEABr) layer is introduced to both the upper and lower interfaces of the vapor-deposited perovskite emission layer by vapor deposition. The vapor deposition of the PEABr with fine-controlled film thickness is a reliable and simple process and compatible with vapor-deposited all-inorganic PeLEDs. The dual-interface modification plays an observable role in manipulating the crystallization and surface morphology of the CsPbBrI₂ film, which is of significance for the improvement of the PeLEDs' performance. As a result, the red PeLEDs achieve a maximum luminance and external quantum efficiency of 2338 cd/m² and 1.75%, corresponding to enhancements of 2.75 and 5.25 times compared with those of PeLEDs without PEABr. This approach paves the way to high-efficiency all-evaporated all-inorganic PeLEDs.

Highly Emissive Quasi-2D Perovskites Enabled by a Multifunctional Molecule for Bright Light-Emitting Diodes

Quasi-two-dimensional (quasi-2D) perovskite has exhibited great potential to be an ideal luminescent material for perovskite light-emitting diodes (PeLEDs). However, the low-order phases (especially n = 1 phase) and the inevitable defects result in massive nonradiative recombination and poor emission efficiency. Herein, a multifunctional molecule of tetrabutylammonium dihydrogen phosphate (TDP) is introduced to simultaneously suppress the low-n phase, passivate the defects, and increase the exciton binding energy of the quasi-2D perovskite for massive radiative recombination and thus high emission efficiency. The multifunctional roles of TDP are realized by the synergistic effects of tetrabutylammonium cation and dihydrogen phosphate anion, both of which show strong interaction with the lead bromide octahedron of the perovskite. As a result, the TDP-incorporated perovskite films show a great enhancement of the emission efficiency with a remarkable increase in photoluminescence quantum yield (PLQY) from 34.6 to 96.9% at the wavelength of 522 nm. The strengthened radiative recombination promotes efficient emission efficiency with over 2.5-fold improvement in external quantum efficiency (EQE) and current efficiency (CE) from 3.27% and 10.83 cd A^-1 to 9.25% and 28.35 cd A^-1, respectively, as well as high brightness with over 37% enhancement from 12713 to 17536 cd m^-2. Consequently, this work contributes to an efficient approach to employ a multifunctional molecule for highly emissive quasi-2D perovskites and enhanced quasi-2D PeLED performances.

High-Performance Blue Quasi-2D Perovskite Light-Emitting Diodes via Balanced Carrier Confinement and Transfer

Extensive investigation of the passivating agents has been performed to suppress the perovskite defects. However, very few attentions have been paid to rationally design the passivating agents for the balance of the carrier confinement and transfer in quasi-2D perovskites, which is essential to achieve high-performance perovskite LEDs (PeLEDs). In this work, tributylphosphine oxide (TBPO) with moderate carbon chain length is demonstrated as a decent passivator for the quasi-2D perovskites by strengthening the carrier confinement for massive radiative recombination within the perovskites, and more importantly providing efficient carrier transfer in the quasi-2D perovskites. Benefiting from these interesting optoelectronic properties of TBPO-incorporated perovskites, we achieve high-efficient blue PeLEDs with an external quantum efficiency up to 11.5% and operational stability as long as 41.1 min without any shift of the electroluminescence spectra. Consequently, this work contributes an effective approach to promote the carrier confinement and transfer for high-performance and stable blue PeLEDs.

Highly Efficient Vacuum-Evaporated CsPbBr3 Perovskite Light-Emitting Diodes with an Electrical Conductivity Enhanced Polymer-Assisted Passivation Layer

Highly efficient vacuum-deposited CsPbBr₃ perovskite light-emitting diodes (PeLEDs) are demonstrated by introducing a separate polyethylene oxide (PEO) passivation layer. A CsPbBr₃ film deposited on the PEO layer via thermal co-evaporation of CsBr and PbBr₂ exhibits an almost 50-fold increase in photoluminescence quantum yield intensity compared to a reference sample without PEO. This enhancement is attributed to the passivation of interfacial defects of the perovskite, as evidenced by temperature-dependent photoluminescence measurements. However, direct application of PEO to an LED device is challenging because of the electrically insulating nature of PEO. This issue is solved by doping PEO layers with MgCl₂. This strategy results in an enhanced luminance and external quantum efficiency (EQE) of up to 6887 cd m^-2 and 7.6%, respectively. To the best of our knowledge, this is the highest EQE reported to date among vacuum-deposited PeLEDs.

Efficient and large-area all vacuum-deposited perovskite light-emitting diodes via spatial confinement

With rapid advances of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of patterned PeLEDs towards display panels is of increasing importance. However, most state-of-the-art PeLEDs are fabricated by solution-processed techniques, which are difficult to simultaneously achieve high-resolution pixels and large-scale production. To this end, we construct efficient CsPbBr3 PeLEDs employing a vacuum deposition technique, which has been demonstrated as the most successful route for commercial organic LED displays. By carefully controlling the strength of the spatial confinement in CsPbBr3 film, its radiative recombination is greatly enhanced while the nonradiative recombination is suppressed. As a result, the external quantum efficiency (EQE) of thermally evaporated PeLED reaches 8.0%, a record for vacuum processed PeLEDs. Benefitting from the excellent uniformity and scalability of the thermal evaporation, we demonstrate PeLED with a functional area up to 40.2 cm2 and a peak EQE of 7.1%, representing one of the most efficient large-area PeLEDs. We further achieve high-resolution patterned perovskite film with 100 μm pixels using fine metal masks, laying the foundation for potential display applications. We believe the strategy of confinement strength regulation in thermally evaporated perovskites provides an effective way to process high-efficiency and large-area PeLEDs towards commercial display panels.

Efficient Thermally Evaporated Perovskite Light-Emitting Devices via a Bilateral Interface Engineering Strategy

Physical vapor deposition has emerged as a promising strategy for efficient and stable all-inorganic perovskite light-emitting devices (PeLEDs). However, the thermally evaporated PeLEDs still suffer from unsatisfactory optoelectrical performance because of the massive nonradiative defects. Herein, we demonstrate an efficient bilateral interfacial defect-passivation strategy toward high-performance PeLEDs with a thermally deposited CsPbBr₃ emissive layer (EML). Specifically, the nonradiative defects from the bulk as well as the EML/charge transport layer (CTL) interface are significantly suppressed by implementing the 3-amino-1-propanol (3AP)-modified PEDOT:PSS and introducing ammonium salts, respectively. Simultaneously, both the 3AP induced less-conductive Cs₄PbBr₆ and ammonium salts can balance the charge injection into the EML effectively. As a result, we achieved efficient PeLEDs based on thermally evaporated CsPbBr₃ with a luminance of 15745 cd/m², current efficiency of 32 cd/A, external quantum efficiency of 8.86%, and lifetime of 3.74 h. The strategy proposed here may shed light on the development of highly efficient thermally evaporated PeLEDs.

Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

Surfaces and heterojunction interfaces, where defects and energy levels dictate charge-carrier dynamics in optoelectronic devices, are critical for unlocking the full potential of perovskite semiconductors. In this progress report, chemical structures of perovskite surfaces are discussed and basic physical rules for the band alignment are summarized at various perovskite interfaces. Common perovskite surfaces are typically decorated by various compositional and structural defects such as residual surface reactants, discrete nanoclusters, reactions by products, vacancies, interstitials, antisites, etc. Some of these surface species induce deep-level defect states in the forbidden band forming very harmful charge-carrier traps and affect negatively the interface band alignments for achieving optimal device performance. Herein, an overview of research progresses on surface and interface engineering is provided to minimize deep-level defect states. The reviewed subjects include selection of interface and substrate buffer layers for growing better crystals, materials and processing methods for surface passivation, the surface catalyst for microstructure transformations, organic semiconductors for charge extraction or injection, heterojunctions with wide bandgap perovskites or nanocrystals for mitigating defects, and electrode interlayer for preventing interdiffusion and reactions. These surface and interface engineering strategies are shown to be critical in boosting device performance for both solar cells and light-emitting diodes.

Lead halide perovskite for efficient optoacoustic conversion and application toward high-resolution ultrasound imaging

Lead halide perovskites have exhibited excellent performance in solar cells, LEDs and detectors. Thermal properties of perovskites, such as heat capacity and thermal conductivity, have rarely been studied and corresponding devices have barely been explored. Considering the high absorption coefficient (104~105 cm-1), low specific heat capacity (296-326 J kg-1 K-1) and small thermal diffusion coefficient (0.145 mm2 s-1), herein we showcase the successful use of perovskite in optoacoustic transducers. The theoretically calculated phonon spectrum shows that the overlap of optical phonons and acoustic phonons leads to the up-conversion of acoustic phonons, and thus results in experimentally measured low thermal diffusion coefficient. The assembled device of PDMS/MAPbI3/PDMS simultaneously achieves broad bandwidths (-6 dB bandwidth: 40.8 MHz; central frequency: 29.2 MHz), and high conversion efficiency (2.97 × 10-2), while all these parameters are the record values for optoacoustic transducers. We also fabricate miniatured devices by assembling perovskite film onto fibers, and clearly resolve the fine structure of fisheyes, which demonstrates the strong competitiveness of perovskite based optoacoustic transducers for ultrasound imaging.

Materials, photophysics and device engineering of perovskite light-emitting diodes

Here we provide a comprehensive review of a newly developed lighting technology based on metal halide perovskites (i.e. perovskite light-emitting diodes) encompassing the research endeavours into materials, photophysics and device engineering. At the outset we survey the basic perovskite structures and their various dimensions (namely three-, two- and zero-dimensional perovskites), and demonstrate how the compositional engineering of these structures affects the perovskite light-emitting properties. Next, we turn to the physics underpinning photo- and electroluminescence in these materials through their connection to the fundamental excited states, energy/charge transport processes and radiative and non-radiative decay mechanisms. In the remainder of the review, we focus on the engineering of perovskite light-emitting diodes, including the history of their development as well as an extensive analysis of contemporary strategies for boosting device performance. Key concepts include balancing the electron/hole injection, suppression of parasitic carrier losses, improvement of the photoluminescence quantum yield and enhancement of the light extraction. Overall, this review reflects the current paradigm for perovskite lighting, and is intended to serve as a foundation to materials and device scientists newly working in this field.

Vacuum-Processed Metal Halide Perovskite Light-Emitting Diodes: Prospects and Challenges

In less than a decade, organic-inorganic metal halide perovskites (MHPs) have shown tremendous progress in the field of light-emitting applications. Perovskite light-emitting diodes (PeLEDs) have reached external quantum efficiencies (EQE) exceeding 20 % and they have been recognized as a potential contender of the commercial display technologies. However, perovskite thin films in PeLEDs are generally deposited via a spin-coating process, which is not favourable for large area device fabrication. Despite the great success of solution-processed PeLEDs, very few articles have been reported on vacuum processed PeLEDs and the improvements in their optoelctronic performances are also progressing slowly. On the other hand, vacuum processing techniques are mostly used in organic LED technology as they can guarantee (i) the absence of solvent during thin-film growth, (ii) process scalability over large area substrates, and (iii) precise thin-film thickness control. This thin-film growth process is suitable for application in the advancement of a large variety of display technologies. In this Review, we present an overview of current research advances in the field of perovskite thin films grown via vacuum techniques, a study of their photophysical properties, and integration in PeLEDs for the generation of different colors. We also highlight the current challenges and future prospects for the further development of vacuum processed PeLEDs.

Efficient and Bright Pure-Blue All-Inorganic Perovskite Light-Emitting Diodes from an Ecofriendly Alloy

Metal halide perovskite light-emitting diodes (PeLEDs) have been regarded as alternative candidates for full-color display applications with rapid progress to surge the external quantum efficiencies (EQEs) over 20%. However, in contrast to the high efficiencies of green, red, and near-infrared PeLEDs, the performance of their blue cousins is still lagging behind, especially the pure-blue one. Obtaining blue perovskite films with negligible nonradiative recombination loss and high stability is of great importance to realize efficient and spectrally stable blue PeLEDs. In this work, through partially replacing the toxic lead ions (Pb²⁺) with ecofriendly strontium ions (Sr²⁺) to tune the emission wavelength along with using passivation strategies, all-inorganic pure-blue perovskite films with a high photoluminescence quantum yield of 60.7% were achieved, which then delivered PeLEDs with a luminance of 510 cd m^-2 and an EQE of 1.43%. The device yields a record radiance among the most efficient PeLEDs at 467 nm. In addition, the resultant PeLEDs displayed exceptional spectral stability during the electrical bias operation. Our work provides a promising avenue to develop environmentally friendly perovskite materials for efficient and spectrally stable pure-blue PeLEDs and beyond.

Focus on performance of perovskite light-emitting diodes

Perovskite-based optoelectronic devices, especially perovskite light-emitting diodes (PeLEDs) and perovskite solar cells, have recently attracted considerable attention. The National Renewable Energy Laboratory (NREL) chart inspires us to develop a counterpart for PeLEDs. In this study, we collect the record performance of PeLEDs including several new entries to address their latest external quantum efficiency (EQE), highest luminance, and stability status. We hope that these performance tables and future updated versions will show the frontiers of PeLEDs, assist researchers in capturing the overview of this field, identify the remaining challenges, and predict the promising research directions.

Inverse Growth of Large-Grain-Size and Stable Inorganic Perovskite Micronanowire Photodetectors

Control of forward and inverse reactions between perovskites and precursor materials is key to attaining high-quality perovskite materials. Many techniques focus on synthesizing nanostructured CsPbX₃ materials (e.g., nanowires) via a forward reaction (CsX + PbX₂ → CsPbX₃). However, low solubility of inorganic perovskites and complex phase transition make it difficult to realize the precise control of composition and length of nanowires using the conventional forward approach. Herein, we report the self-assembly inverse growth of CsPbBr₃ micronanowires (MWs) (CsPb₂Br₅ → CsPbBr₃ + PbBr₂↑) by controlling phase transition from CsPb₂Br₅ to CsPbBr₃. The two-dimensional (2D) structure of CsPb₂Br₅ serves as nucleation sites to induce initial CsPbBr₃ MW growth. Also, phase transition allows crystal rearrangement and slows down crystal growth, which facilitates the MW growth of CsPbBr₃ crystals along the 2D planes of CsPb₂Br₅. A CsPbBr₃ MW photodetector constructed based on the inverse growth shows a high responsivity of 6.44 A W^-1 and detectivity of ∼10¹² Jones. Large grain size, high crystallinity, and large thickness can effectively alleviate decomposition/degradation of perovskites, which leads to storage stability for over 60 days in humid environment (relative humidity = 45%) and operational stability for over 3000 min under illumination (wavelength = 400 nm, light intensity = 20.06 mW cm^-2).

Triple-halide wide-band gap perovskites with suppressed phase segregation for efficient tandems

Wide-band gap metal halide perovskites are promising semiconductors to pair with silicon in tandem solar cells to pursue the goal of achieving power conversion efficiency (PCE) greater than 30% at low cost. However, wide-band gap perovskite solar cells have been fundamentally limited by photoinduced phase segregation and low open-circuit voltage. We report efficient 1.67-electron volt wide-band gap perovskite top cells using triple-halide alloys (chlorine, bromine, iodine) to tailor the band gap and stabilize the semiconductor under illumination. We show a factor of 2 increase in photocarrier lifetime and charge-carrier mobility that resulted from enhancing the solubility of chlorine by replacing some of the iodine with bromine to shrink the lattice parameter. We observed a suppression of light-induced phase segregation in films even at 100-sun illumination intensity and less than 4% degradation in semitransparent top cells after 1000 hours of maximum power point (MPP) operation at 60°C. By integrating these top cells with silicon bottom cells, we achieved a PCE of 27% in two-terminal monolithic tandems with an area of 1 square centimeter.