1
|
Li Z, Ngai JHL, Ding J. Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1477. [PMID: 39330635 PMCID: PMC11434607 DOI: 10.3390/nano14181477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2024] [Revised: 09/04/2024] [Accepted: 09/06/2024] [Indexed: 09/28/2024]
Abstract
The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors' (TFTs') performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration.
Collapse
Affiliation(s)
- Zhao Li
- Security and Disruptive Technologies Portfolio, National Research Council Canada, 1200 Montreal Road, Ottawa, ON K1A 0R6, Canada; (J.H.L.N.); (J.D.)
| | | | | |
Collapse
|
2
|
Sung J, Chung S, Jang Y, Jang H, Kim J, Lee C, Lee D, Jeong D, Cho K, Kim YS, Kang J, Lee W, Lee E. Unveiling the Role of Side Chain for Improving Nonvolatile Characteristics of Conjugated Polymers-Based Artificial Synapse. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400304. [PMID: 38408158 DOI: 10.1002/advs.202400304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Indexed: 02/28/2024]
Abstract
Interest has grown in services that consume a significant amount of energy, such as large language models (LLMs), and research is being conducted worldwide on synaptic devices for neuromorphic hardware. However, various complex processes are problematic for the implementation of synaptic properties. Here, synaptic characteristics are implemented through a novel method, namely side chain control of conjugated polymers. The developed devices exhibit the characteristics of the biological brain, especially spike-timing-dependent plasticity (STDP), high-pass filtering, and long-term potentiation/depression (LTP/D). Moreover, the fabricated synaptic devices show enhanced nonvolatile characteristics, such as long retention time (≈102 s), high ratio of Gmax/Gmin, high linearity, and reliable cyclic endurance (≈103 pulses). This study presents a new pathway for next-generation neuromorphic computing by modulating conjugated polymers with side chain control, thereby achieving high-performance synaptic properties.
Collapse
Affiliation(s)
- Junho Sung
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Sein Chung
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Yongchan Jang
- Department of Polymer Science and Engineering, Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chan Lee
- Department of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Donghwa Lee
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Dongyeong Jeong
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Youn Sang Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Chemical and Biological Engineering, and Institute of Chemical Processes, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Suwon, 16229, Republic of Korea
| | - Joonhee Kang
- Department of Nanoenergy Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Wonho Lee
- Department of Polymer Science and Engineering, Department of Energy Engineering Convergence, Kumoh National Institute of Technology, Gumi, 39177, Republic of Korea
| | - Eunho Lee
- Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| |
Collapse
|
3
|
Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
Collapse
Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
| |
Collapse
|
4
|
Kim H, Oh S, Choo H, Kang DH, Park JH. Tactile Neuromorphic System: Convergence of Triboelectric Polymer Sensor and Ferroelectric Polymer Synapse. ACS NANO 2023; 17:17332-17341. [PMID: 37611149 DOI: 10.1021/acsnano.3c05337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Sensory neuromorphic systems are a promising technology, because they can replicate the way the human peripheral nervous system processes signals from the five sensory organs. Despite this potential, there are limited studies on how to implement these systems on a hardware neural network platform. In our research, we propose a tactile neuromorphic system that uses a poly(dimethylsiloxane) (PDMS)-based triboelectric sensor and a molybdenum disulfide (MoS2)/poly(vinylidene fluoride-trifluoro ethylene) (P(VDF-TrFE)) heterostructure-based ferroelectric synapse. The triboelectric sensor mimics a human tactile organ by converting tactile stimuli into electrical signals in real time. The ferroelectric synapse we developed demonstrates exceptional long-term potentiation/depression characteristics with a maximum dynamic range of 78 and a symmetrical value of 4.7. To assess the practicality of our proposed system, we conducted training and recognition simulations using Morse code alphabets and MNIST handwritten digits. The maximum recognition rate that we achieved was 96.17%.
Collapse
Affiliation(s)
- Hyeongjun Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan 15588, South Korea
| | - Hyongsuk Choo
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
| | - Dong-Ho Kang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, South Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16417, Korea
| |
Collapse
|
5
|
Shan L, Chen Q, Yu R, Gao C, Liu L, Guo T, Chen H. A sensory memory processing system with multi-wavelength synaptic-polychromatic light emission for multi-modal information recognition. Nat Commun 2023; 14:2648. [PMID: 37156788 PMCID: PMC10167252 DOI: 10.1038/s41467-023-38396-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Accepted: 04/25/2023] [Indexed: 05/10/2023] Open
Abstract
Realizing multi-modal information recognition tasks which can process external information efficiently and comprehensively is an urgent requirement in the field of artificial intelligence. However, it remains a challenge to achieve simple structure and high-performance multi-modal recognition demonstrations owing to the complex execution module and separation of memory processing based on the traditional complementary metal oxide semiconductor (CMOS) architecture. Here, we propose an efficient sensory memory processing system (SMPS), which can process sensory information and generate synapse-like and multi-wavelength light-emitting output, realizing diversified utilization of light in information processing and multi-modal information recognition. The SMPS exhibits strong robustness in information encoding/transmission and the capability of visible information display through the multi-level color responses, which can implement the multi-level pain warning process of organisms intuitively. Furthermore, different from the conventional multi-modal information processing system that requires independent and complex circuit modules, the proposed SMPS with unique optical multi-information parallel output can realize efficient multi-modal information recognition of dynamic step frequency and spatial positioning simultaneously with the accuracy of 99.5% and 98.2%, respectively. Therefore, the SMPS proposed in this work with simple component, flexible operation, strong robustness, and highly efficiency is promising for future sensory-neuromorphic photonic systems and interactive artificial intelligence.
Collapse
Affiliation(s)
- Liuting Shan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China
| | - Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Lujian Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China.
| |
Collapse
|
6
|
Yoon J, You B, Kim Y, Bak J, Yang M, Park J, Hahm MG, Lee M. Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18463-18472. [PMID: 36881815 DOI: 10.1021/acsami.3c00254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of ∼110 fJ, excellent linearity, and short-/long-term plasticity. Furthermore, the 2D Te synaptic device achieved reconfigurable MNIST recognition accuracy characteristics of 88.2%, even after harmful detergent environment infection. We believe that this work serves as a guide for developing futuristic neuromorphic edge computing.
Collapse
Affiliation(s)
- Jeechan Yoon
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Bolim You
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Yuna Kim
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Jina Bak
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Mino Yang
- Korea Basic Science Institute Seoul, 145 anam-ro Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jihyang Park
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Moonsang Lee
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| |
Collapse
|
7
|
Choi YJ, Roe DG, Choi YY, Kim S, Jo SB, Lee HS, Kim DH, Cho JH. Multiplexed Complementary Signal Transmission for a Self-Regulating Artificial Nervous System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205155. [PMID: 36437048 PMCID: PMC9875628 DOI: 10.1002/advs.202205155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/09/2022] [Indexed: 06/16/2023]
Abstract
Neuromorphic engineering has emerged as a promising research field that can enable efficient and sophisticated signal transmission by mimicking the biological nervous system. This paper presents an artificial nervous system capable of facile self-regulation via multiplexed complementary signals. Based on the tunable nature of the Schottky barrier of a complementary signal integration circuit, a pair of complementary signals is successfully integrated to realize efficient signal transmission. As a proof of concept, a feedback-based blood glucose level control system is constructed by incorporating a glucose/insulin sensor, a complementary signal integration circuit, an artificial synapse, and an artificial neuron circuit. Certain amounts of glucose and insulin in the initial state are detected by each sensor and reflected as positive and negative amplitudes of the multiplexed presynaptic pulses, respectively. Subsequently, the pulses are converted to postsynaptic current, which triggered the injection of glucose or insulin in a way that confined the glucose level to a desirable range. The proposed artificial nervous system demonstrates the notable potential of practical advances in complementary control engineering.
Collapse
Affiliation(s)
- Young Jin Choi
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722Republic of Korea
| | - Dong Gue Roe
- School of Electrical and Electronic EngineeringYonsei UniversitySeoul03722Republic of Korea
| | - Yoon Young Choi
- Department of Mechanical Science and EngineeringUniversity of Illinois at Urbana−ChampaignUrbanaIL61801USA
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Republic of Korea
| | - Sae Byeok Jo
- School of Chemical EngineeringSKKU Institute of Energy Science and Technology (SIEST)Sungkyunkwan University (SKKU)Suwon16419Republic of Korea
| | - Hwa Sung Lee
- Department of Materials Science and Chemical EngineeringHanyang UniversityAnsan15588Republic of Korea
| | - Do Hwan Kim
- Department of Chemical EngineeringHanyang UniversitySeoul04763Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular EngineeringYonsei UniversitySeoul03722Republic of Korea
| |
Collapse
|
8
|
Liu Y, Wang Y, Li X, Hu Z. A thermally crosslinked ion-gel gated artificial synapse. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
|
9
|
Li YT, Li JZ, Ren L, Xu K, Chen S, Han L, Liu H, Guo XL, Yu DL, Li DH, Ding L, Peng LM, Ren TL. Light-Controlled Reconfigurable Optical Synapse Based on Carbon Nanotubes/2D Perovskite Heterostructure for Image Recognition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:28221-28229. [PMID: 35679528 DOI: 10.1021/acsami.2c05818] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) halide perovskite material is characterized by a mixed conducting behavior that possesses both electronic and ionic conductivity. The study on the influence of the light on ion migration in the 2D perovskite is helpful to improve the performance of perovskite-based optoelectronic devices. Here, we constructed an exfoliated 2D perovskite/carbon nanotubes (CNTs) heterostructure optical synapse, in which CNTs can be used as nanoprobes to qualitatively observe the ion aggregation or dissipation process in 2D perovskite, and found that light significantly changes the memory curve of the reconfigurable optical synapses. Through the molecular dynamic simulation, the dynamic process of ion migration in the heterostructure was simulated and the electrostatic interaction effect of nonequilibrium charge distribution of CNTs on iodide ion was demonstrated. Finally, an effective light-controlled process was realized through the synapses, which in situ regulated the performance of the weight-value discretized BP (WD-BP) neural network. This work lays a foundation for the future development of intelligent nano-optoelectronic devices.
Collapse
Affiliation(s)
- Yu-Tao Li
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
- School of Integrated Circuits, The Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jun-Ze Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Li Ren
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Kui Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
| | - Sheng Chen
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Lei Han
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Hang Liu
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Xiao-Liang Guo
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Du-Li Yu
- College of Information Science and Technology, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - De-Hui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Tian-Ling Ren
- School of Integrated Circuits, The Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| |
Collapse
|
10
|
Shen CK, Chaurasiya R, Chen KT, Chen JS. Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16939-16948. [PMID: 35357811 DOI: 10.1021/acsami.2c03066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (ID-VG) analysis. This substantiates superior artificial synapse responses in ferroelectric-coupled ZTO TFT because the current potentiation and depression are individually improved. The ferroelectric-coupled ZTO TFT successfully emulates the essential features of the artificial synapse, including pair-pulsed facilitation (PPF) and potentiation/depression (P/D) characteristics. In addition, the device also mimics the memory consolidation behavior through intensified stimulation. This work demonstrates that the ferroelectric-coupled ZTO synaptic transistor possesses great potential as a hardware candidate for neuromorphic computing.
Collapse
Affiliation(s)
- Ching-Kang Shen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Rajneesh Chaurasiya
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Kuan-Ting Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
| |
Collapse
|
11
|
Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
Collapse
Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
| |
Collapse
|
12
|
Oh S, Lee JH, Seo S, Choo H, Lee D, Cho JI, Park JH. Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103808. [PMID: 34957687 PMCID: PMC8867203 DOI: 10.1002/advs.202103808] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 11/11/2021] [Indexed: 06/01/2023]
Abstract
Recently, three-terminal synaptic devices, which separate read and write terminals, have attracted significant attention because they enable nondestructive read-out and parallel-access for updating synaptic weights. However, owing to their structural features, it is difficult to address the relatively high device density compared with two-terminal synaptic devices. In this study, a vertical synaptic device featuring remotely controllable weight updates via e-field-dependent movement of mobile ions in the ion-gel layer is developed. This synaptic device successfully demonstrates all essential synaptic characteristics, such as excitatory/inhibitory postsynaptic current (E/IPSC), paired-pulse facilitation (PPF), and long-term potentiation/depression (LTP/D) by electrical measurements, and exhibits competitive LTP/D characteristics with a dynamic range (Gmax /Gmin ) of 31.3, and asymmetry (AS) of 8.56. The stability of the LTP/D characteristics is also verified through repeated measurements over 50 cycles; the relative standard deviations (RSDs) of Gmax /Gmin and AS are calculated as 1.65% and 0.25%, respectively. These excellent synaptic properties enable a recognition rate of ≈99% in the training and inference tasks for acoustic and emotional information patterns. This study is expected to be an important foundation for the realization of future parallel computing networks for energy-efficient and high-speed data processing.
Collapse
Affiliation(s)
- Seyong Oh
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Ju-Hee Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Seunghwan Seo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Hyongsuk Choo
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dongyoung Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jeong-Ick Cho
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16417, Korea
| |
Collapse
|
13
|
Lee M, Nam S, Cho B, Kwon O, Lee HU, Hahm MG, Kim UJ, Son H. Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap Level. NANO LETTERS 2021; 21:7879-7886. [PMID: 34328342 DOI: 10.1021/acs.nanolett.1c01885] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Artificial synaptic platforms are promising for next-generation semiconductor computing devices; however, state-of-the-art optoelectronic approaches remain challenging, owing to their unstable charge trap states and limited integration. We demonstrate wide-band-gap (WBG) III-V materials for photoelectronic neural networks. Our experimental analysis shows that the enhanced crystallinity of WBG synapses promotes better synaptic characteristics, such as effective multilevel states, a wider dynamic range, and linearity, allowing the better power consumption, training, and recognition accuracy of artificial neural networks. Furthermore, light-frequency-dependent memory characteristics suggest that artificial optoelectronic synapses with improved crystallinity support the transition from short-term potentiation to long-term potentiation, implying a clear emulation of the psychological multistorage model. This is attributed to the charge trapping in deep-level states and suppresses fast decay and nonradiative recombination in shallow traps. We believe that the fingerprints of these WBG synaptic characteristics provide an effective strategy for establishing an artificial optoelectronic synaptic architecture for innovative neuromorphic computing.
Collapse
Affiliation(s)
- Moonsang Lee
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Seunghyun Nam
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Ojun Kwon
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
| | - Hyun Uk Lee
- Research Center for Materials Analysis, Korea Basic Science Institute (KBSI), Daejeon 34133, Republic of Korea
| | - Myung Gwan Hahm
- Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea
| | - Un Jeong Kim
- Imaging Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
| | - Hyungbin Son
- School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| |
Collapse
|
14
|
Kim SH, Park MU, Lee C, Yi SG, Kim M, Choi Y, Cho JH, Yoo KH. Rectifying optoelectronic memory based on WSe 2/graphene heterostructures. NANOSCALE ADVANCES 2021; 3:4952-4960. [PMID: 36132353 PMCID: PMC9419859 DOI: 10.1039/d1na00504a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Accepted: 07/17/2021] [Indexed: 06/15/2023]
Abstract
van der Waals heterostructures composed of two-dimensional materials vertically stacked have been extensively studied to develop various multifunctional devices. Here, we report WSe2/graphene heterostructure devices with a top floating gate that can serve as multifunctional devices. They exhibit gate-controlled rectification inversion, rectified nonvolatile memory effects, and multilevel optoelectronic memory effects. Depending on the polarity of the gate voltage pulses (V Gp), electrons or holes can be trapped in the floating gate, resulting in rectified nonvolatile memory properties. Furthermore, upon repeated illumination with laser pulses, positive or negative staircase photoconductivity is observed depending on the history of V Gp, which is ascribed to the tunneling of electrons or holes between the WSe2 channel and the floating gate. These multifunctional devices can be used to emulate excitatory and inhibitory synapses that have different neurotransmitters. Various synaptic functions, such as potentiation/depression curves and spike-timing-dependent plasticity, have been also implemented using these devices. In particular, 128 optoelectronic memory states with nonlinearity less than 1 can be achieved by controlling applied laser pulses and V Gp, suggesting that the WSe2/graphene heterostructure devices with a top floating gate can be applied to optoelectronic synapse devices.
Collapse
Affiliation(s)
- Sung Hyun Kim
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Myung Uk Park
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - ChangJun Lee
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Sum-Gyun Yi
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Myeongjin Kim
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Yongsuk Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| | - Kyung-Hwa Yoo
- Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea
| |
Collapse
|
15
|
Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
Collapse
Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| |
Collapse
|
16
|
Roe DG, Kim S, Choi YY, Woo H, Kang MS, Song YJ, Ahn JH, Lee Y, Cho JH. Biologically Plausible Artificial Synaptic Array: Replicating Ebbinghaus' Memory Curve with Selective Attention. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007782. [PMID: 33644934 DOI: 10.1002/adma.202007782] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 01/19/2021] [Indexed: 06/12/2023]
Abstract
The nature of repetitive learning and oblivion of memory enables humans to effectively manage vast amounts of memory by prioritizing information for long-term storage. Inspired by the memorization process of the human brain, an artificial synaptic array is presented, which mimics the biological memorization process by replicating Ebbinghaus' forgetting curve. To construct the artificial synaptic array, signal-transmitting access transistors and artificial synaptic memory transistors are designed using indium-gallium-zinc-oxide and poly(3-hexylthiophene), respectively. To secure the desired performance of the access transistor in regulating the input signal to the synaptic transistor, the content of gallium in the access transistor is optimized. In addition, the operation voltage of the synaptic transistor is carefully selected to achieve memory-state efficiency. Repetitive learning characterizing Ebbinghaus' oblivion curves is realized using an artificial synaptic array with optimized conditions for both transistor components. This successfully demonstrates a biologically plausible memorization process. Furthermore, selective attention for information prioritization in the human brain is mimicked by selectively applying repetitive learning to a synaptic transistor with a high memory state. The demonstrated biologically plausible artificial synaptic array provides great scope for advancement in bioinspired electronics.
Collapse
Affiliation(s)
- Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yoon Young Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Hwije Woo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
| | - Young Jae Song
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Yoonmyung Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| |
Collapse
|
17
|
Kim S, Roe DG, Choi YY, Woo H, Park J, Lee JI, Choi Y, Jo SB, Kang MS, Song YJ, Jeong S, Cho JH. Artificial stimulus-response system capable of conscious response. SCIENCE ADVANCES 2021; 7:7/15/eabe3996. [PMID: 33837079 PMCID: PMC8034844 DOI: 10.1126/sciadv.abe3996] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2020] [Accepted: 02/24/2021] [Indexed: 05/12/2023]
Abstract
A stimulus-response system and conscious response enable humans to respond effectively to environmental changes and external stimuli. This paper presents an artificial stimulus-response system that is inspired by human conscious response and is capable of emulating it. The system is composed of an artificial visual receptor, artificial synapse, artificial neuron circuits, and actuator. By incorporating these artificial nervous components, a series of conscious response processes that markedly reduces response time as a result of learning from repeated stimuli are demonstrated. The proposed artificial stimulus-response system offers the promise of a new research field that would aid the development of artificial intelligence-based organs for patients with neurological disorders.
Collapse
Affiliation(s)
- Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Dong Gue Roe
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Korea
| | - Yoon Young Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea
| | - Hwije Woo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Joongpill Park
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon 16419, Korea
| | - Jong Ik Lee
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Korea
| | - Yongsuk Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea
| | - Sae Byeok Jo
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Korea
- Institute of Emergent Materials, Sogang University, Seoul 04107, Korea
| | - Young Jae Song
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
| | - Sohee Jeong
- Department of Energy Science and Center for Artificial Atoms, Sungkyunkwan University, Suwon 16419, Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Korea.
| |
Collapse
|
18
|
Jeon YR, Choi J, Kwon JD, Park MH, Kim Y, Choi C. Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe 2 Material. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10161-10170. [PMID: 33591167 DOI: 10.1021/acsami.0c18784] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe2) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO2/Pt, Ag/Ti/HfO2/Pt, and Ag/NbSe2/HfO2/Pt were studied as both memory and neuromorphic devices. Both the inserted Ti and NbSe2 buffer layers effectively control the stochastic Ag-ion diffusion, leading to suppressed variation of switching characteristics, which is a critical issue in an atomic switch device. Especially, the device with the 2D NbSe2 buffer layer strikingly enhanced the device reliability in both endurance and retention. In conjunction with scanning transmission electron microscopy (STEM) and energy-dispersive spectrometry (EDS) analysis of the control of the Ag-ion migration, it was understood that filament connection is interrelated with the SET and RESET processes. Besides resistive behaviors in the memory device, various synapse functions such as spike-rate-dependent plasticity (SRDP), forgetting curve, potentiation, and depression were demonstrated with an atomic switch with the 2D NbSe2 buffer layer. Furthermore, the emulated long-term synaptic property was simulated using the MNIST 28 × 28 pixel database. Using adopting a CVD 2D NbSe2 blocking layer, the stochastic Ag-ion diffusion behavior is well-controlled and therefore stable switching and synapse functions are attained.
Collapse
Affiliation(s)
- Yu-Rim Jeon
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jungmin Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
| |
Collapse
|
19
|
Yao X, Zhang Y, Jin W, Hu Y, Cui Y. Carbon Nanotube Field-Effect Transistor-Based Chemical and Biological Sensors. SENSORS (BASEL, SWITZERLAND) 2021; 21:995. [PMID: 33540641 PMCID: PMC7867273 DOI: 10.3390/s21030995] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 01/25/2021] [Accepted: 01/26/2021] [Indexed: 02/05/2023]
Abstract
Chemical and biological sensors have attracted great interest due to their importance in applications of healthcare, food quality monitoring, environmental monitoring, etc. Carbon nanotube (CNT)-based field-effect transistors (FETs) are novel sensing device configurations and are very promising for their potential to drive many technological advancements in this field due to the extraordinary electrical properties of CNTs. This review focuses on the implementation of CNT-based FETs (CNTFETs) in chemical and biological sensors. It begins with the introduction of properties, and surface functionalization of CNTs for sensing. Then, configurations and sensing mechanisms for CNT FETs are introduced. Next, recent progresses of CNTFET-based chemical sensors, and biological sensors are summarized. Finally, we end the review with an overview about the current application status and the remaining challenges for the CNTFET-based chemical and biological sensors.
Collapse
Affiliation(s)
- Xuesong Yao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China; (X.Y.); (Y.Z.)
| | - Yalei Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China; (X.Y.); (Y.Z.)
| | - Wanlin Jin
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-Optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China;
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, Frontiers Science Center for Nano-Optoelectronics, and Department of Electronics, Peking University, Beijing 100871, China;
| | - Yue Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, China; (X.Y.); (Y.Z.)
| |
Collapse
|
20
|
Lu K, Li X, Sun Q, Pang X, Chen J, Minari T, Liu X, Song Y. Solution-processed electronics for artificial synapses. MATERIALS HORIZONS 2021; 8:447-470. [PMID: 34821264 DOI: 10.1039/d0mh01520b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Artificial synaptic devices and systems have become hot topics due to parallel computing, high plasticity, integration of storage, and processing to meet the challenges of the traditional Von Neumann computers. Currently, two-terminal memristors and three-terminal transistors have been mainly developed for high-density storage with high switching speed and high reliability because of the adjustable resistivity, controllable ion migration, and abundant choices of functional materials and fabrication processes. To achieve the low-cost, large-scale, and easy-process fabrication, solution-processed techniques have been extensively employed to develop synaptic electronics towards flexible and highly integrated three-dimensional (3D) neural networks. Herein, we have summarized and discussed solution-processed techniques in the fabrication of two-terminal memristors and three-terminal transistors for the application of artificial synaptic electronics mainly reported in the recent five years from the view of fabrication processes, functional materials, electronic operating mechanisms, and system applications. Furthermore, the challenges and prospects were discussed in depth to promote solution-processed techniques in the future development of artificial synapse with high performance and high integration.
Collapse
Affiliation(s)
- Kuakua Lu
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, P. R. China.
| | | | | | | | | | | | | | | |
Collapse
|
21
|
Corletto A, Shapter JG. Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 8:2001778. [PMID: 33437571 PMCID: PMC7788638 DOI: 10.1002/advs.202001778] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Revised: 07/30/2020] [Indexed: 05/09/2023]
Abstract
Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.
Collapse
Affiliation(s)
- Alexander Corletto
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| | - Joseph G. Shapter
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| |
Collapse
|