Spontaneous Symmetry Breaking of Nanoscale Spatiotemporal Pattern as the Origin of Helical Nanopore Etching in Silicon

Voltage- and Metal-assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review

Sculpting silicon at the micro and nano scales has been game-changing to mold bulk silicon properties and expand, in turn, applications of silicon beyond electronics, namely, in photonics, sensing, medicine, and mechanics, to cite a few. Voltage- and metal-assisted chemical etching (ECE and MaCE, respectively) of silicon in acidic electrolytes have emerged over other micro and nanostructuring technologies thanks to their unique etching features. ECE and MaCE have enabled the fabrication of novel structures and devices not achievable otherwise, complementing those feasible with the deep reactive ion etching (DRIE) technology, the gold standard in silicon machining. Here, a comprehensive review of ECE and MaCE for silicon micro and nano machining is provided. The chemistry and physics ruling the dissolution of silicon are dissected and similarities and differences between ECE and MaCE are discussed showing that they are the two sides of the same coin. The processes governing the anisotropic etching of designed silicon micro and nanostructures are analyzed, and the modulation of etching profile over depth is discussed. The preparation of micro- and nanostructures with tailored optical, mechanical, and thermo(electrical) properties is then addressed, and their applications in photonics, (bio)sensing, (nano)medicine, and micromechanical systems are surveyed. Eventually, ECE and MaCE are benchmarked against DRIE, and future perspectives are highlighted.

Solid-State Nanopore Array: Manufacturing and Applications

Nanopore brings extraordinary properties for a variety of potential applications in various industrial sectors. Since manufacturing of solid-state nanopore is first reported in 2001, solid-state nanopore has become a hot topic in the recent years. An increasing number of manufacturing methods have been reported, with continuously decreased sizes from hundreds of nanometers at the beginning to ≈1 nm until recently. To enable more robust, sensitive, and reliable devices required by the industry, researchers have started to explore the possible methods to manufacture nanopore array which presents unprecedented challenges on the fabrication efficiency, accuracy and repeatability, applicable materials, and cost. As a result, the exploration of fabrication of nanopore array is still in the fledging period with various bottlenecks. In this article, a wide range of methods of manufacturing nanopores are summarized along with their achievable morphologies, sizes, inner structures for characterizing the main features, based on which the manufacturing of nanopore array is further addressed. To give a more specific idea on the potential applications of nanopore array, some representative practices are introduced such as DNA/RNA sequencing, energy conversion and storage, water desalination, nanosensors, nanoreactors, and dialysis.

Production of Noble-Metal Nanohelices Based on Nonlinear Dynamics in Electrodeposition of Binary Copper Alloys

Spatiotemporal pattern formation is dynamic self-organization widely observed in nature and drives various functions. Among these functions, chirality plays a central role. The relationship between dynamic self-organization and chirality has been an open question; therefore, the production of chiral nanomaterials by dynamic self-organization has not been achieved. Here, we show that the confinement of a two-dimensional spatiotemporal micropattern via the electrodeposition of a binary Cu alloy into a nanopore induces mirror symmetry breaking to produce a helical nanostructure of the noble-metal component although it is still not yet possible to control the handedness at this stage. This result suggests that spatiotemporal symmetry breaking functions as a mirror symmetry breaking if cylindrical pores are given as the boundary condition. This study can be a model system of how spatiotemporal symmetry breaking plays a role in mirror symmetry breaking, and it proposes a new approach to producing helical nanomaterials through dynamic self-organization.

Enhancement of Oxidation of Silicon Carbide Originating from Stacking Faults Formed by Mode-Selective Phonon Excitation Using a Mid-Infrared Free Electron Laser

Silicon carbide (SiC) is a promising material for wide applications due to its excellent material properties including high physical and chemical stability as well as great electronic properties of a wide bandgap. The high stability, however, makes its surface processing difficult. Especially, electrochemical processing is not well-established because of low electrochemical reactivity. Here, we show that selective phonon excitation by a mid-infrared free electron laser (MIR-FEL) enhances the anodic reactions. The selective excitation of two different vibration modes of the Si-C bond induces two different stacking faults, which act as a current path. As an application, we discovered that MIR-FEL irradiation enables Pt electroless deposition. This work reveals the interactions among phonons, lattice defects, and electrochemical reactions, encouraging further development of not only electrochemical surface processing but also a new application of MIR-FEL.

Biased Symmetry Breaking and Chiral Control by Self-Replicating in Achiral Tetradentate Platinum (II) Complexes

Obtaining homochirality from biased symmetry-breaking of self-assembly in achiral molecules remains a great challenge due to the lack of ingenious strategies and controlling their handedness. Here, we report the first case of biased symmetry breaking from achiral platinum (II) liquid crystals which self-organize into an enantiomerically enriched single domain without selection of handedness in twist grain boundary TGB ^[ *^] phase. Most importantly, the chiral control of self-organization can be achieved by using above the homochiral liquid crystal films with determined handedness (P or M) as a template. Moreover, benefiting from self-assembled superhelix, these complexes exhibit prominent circularly polarized luminescence with high |g_lum | up to 3.4×10^-3 in the TGB ^[ *^] mesophase. This work paves a neoteric avenue for the development of chiral self-assemblies from achiral molecules.

The Role of the Molecular Hydrogen Formation in the Process of Metal-Ion Reduction on Multicrystalline Silicon in a Hydrofluoric Acid Matrix

Metal deposition on silicon in hydrofluoric acid (HF) solutions is a well-established process for the surface patterning of silicon. The reactions behind this process, especially the formation or the absence of molecular hydrogen (H2), are controversially discussed in the literature. In this study, several batch experiments with Ag+, Cu2+, AuCl4- and PtCl62- in HF matrix and multicrystalline silicon were performed. The stoichiometric amounts of the metal depositions, the silicon dissolution and the molecular hydrogen formation were determined analytically. Based on these data and theoretical considerations of the valence transfer, four reasons for the formation of H2 could be identified. First, H2 is generated in a consecutive reaction after a monovalent hole transfer (h+) to a Si-Si bond. Second, H2 is produced due to a monovalent hole transfer to the Si-H bonds. Third, H2 occurs if Si-Si back bonds of the hydrogen-terminated silicon are attacked by Cu2+ reduction resulting in the intermediate species HSiF3, which is further degraded to H2 and SiF62-. The fourth H2-forming reaction reduces oxonium ions (H3O+) on the silver/, copper/ and gold/silicon contacts via monovalent hole transfer to silicon. In the case of (cumulative) even-numbered valence transfers to silicon, no H2 is produced. The formation of H2 also fails to appear if the equilibrium potential of the 2H3O+/H2 half-cell does not reach the energetic level of the valence bands of the bulk or hydrogen-terminated silicon. Non-hydrogen-forming reactions in silver, copper and gold deposition always occur with at least one H2-forming process. The PtCl62- reduction to Pt proceeds exclusively via even-numbered valence transfers to silicon. This also applies to the reaction of H3O+ at the platinum/silicon contact. Consequently, no H2 is formed during platinum deposition.