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Wang Z, Gao H, Wu D, Meng J, Deng J, Cui M. Defects and Defect Passivation in Perovskite Solar Cells. Molecules 2024; 29:2104. [PMID: 38731595 PMCID: PMC11085331 DOI: 10.3390/molecules29092104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Revised: 04/23/2024] [Accepted: 04/24/2024] [Indexed: 05/13/2024] Open
Abstract
Perovskite solar cells have made significant strides in recent years. However, there are still challenges in terms of photoelectric conversion efficiency and long-term stability associated with perovskite solar cells. The presence of defects in perovskite materials is one of the important influencing factors leading to subpar film quality. Adopting additives to passivate defects within perovskite materials is an effective approach. Therefore, we first discuss the types of defects that occur in perovskite materials and the mechanisms of their effect on performance. Then, several types of additives used in perovskite solar cells are discussed, including ionic compounds, organic molecules, polymers, etc. This review provides guidance for the future development of more sustainable and effective additives to improve the performance of solar cells.
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Affiliation(s)
| | - Hongli Gao
- School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
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Lim J, Kim MS, Jang W, Park JK, Wang DH. Versatile Pendant Polymer for Selective Charge Carrier Transport via Controlling the Supramolecular Self-Assembly. CHEMSUSCHEM 2021; 14:5167-5178. [PMID: 34459529 DOI: 10.1002/cssc.202101785] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Revised: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Polyvinyl carbazole (P0)-based pendant polymers were synthesized by modifying carbazole motifs with pyrene derivatives (P1 and P4) to manipulate the bandgap and frontier orbital energy levels. To establish the electronic properties of pendant polymers according to structural differences, the polymers were utilized as additional hole transport layers in planar-type perovskite solar cells and organic photovoltaic cells. When P4 with thiophene-pyrene pendant was used as hole transport layer, all device parameters, except open-circuit voltage, were significantly improved in comparison with P0 and P1 (conjugated with t-butyl pyrene derivatives). Since P4 had more electrically conductive thiophene units than benzene units with fewer alkyl groups, the supramolecular assembly of P4 was found to be more favorable in electronic devices. Furthermore, devices with P4 demonstrated lower dark current than others, which could potentially be useful for charge carrier transport and sensitive photo detecting devices.
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Affiliation(s)
- Jihyun Lim
- School of Integrative Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjack-gu, Seoul, 06974, Republic of Korea
| | - Min-Sung Kim
- Department of Chemistry, Hankuk University of Foreign Studies, Yongin, 17035, Gyeonggi-do, Republic of Korea
| | - Woongsik Jang
- School of Integrative Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjack-gu, Seoul, 06974, Republic of Korea
| | - Jin Kuen Park
- Department of Chemistry, Hankuk University of Foreign Studies, Yongin, 17035, Gyeonggi-do, Republic of Korea
| | - Dong Hwan Wang
- School of Integrative Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjack-gu, Seoul, 06974, Republic of Korea
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Marand ZR, Kermanpur A, Karimzadeh F, Barea EM, Hassanabadi E, Anaraki EH, Julián-López B, Masi S, Mora-Seró I. Structural and Electrical Investigation of Cobalt-Doped NiO x/Perovskite Interface for Efficient Inverted Solar Cells. NANOMATERIALS 2020; 10:nano10050872. [PMID: 32365967 PMCID: PMC7279223 DOI: 10.3390/nano10050872] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 04/07/2020] [Accepted: 04/15/2020] [Indexed: 11/17/2022]
Abstract
Inorganic hole-transporting materials (HTMs) for stable and cheap inverted perovskite-based solar cells are highly desired. In this context, NiOx, with low synthesis temperature, has been employed. However, the low conductivity and the large number of defects limit the boost of the efficiency. An approach to improve the conductivity is metal doping. In this work, we have synthesized cobalt-doped NiOx nanoparticles containing 0.75, 1, 1.25, 2.5, and 5 mol% cobalt (Co) ions to be used for the inverted planar perovskite solar cells. The best efficiency of the devices utilizing the low temperature-deposited Co-doped NiOx HTM obtained a champion photoconversion efficiency of 16.42%, with 0.75 mol% of doping. Interestingly, we demonstrated that the improvement is not from an increase of the conductivity of the NiOx film, but due to the improvement of the perovskite layer morphology. We observe that the Co-doping raises the interfacial recombination of the device but more importantly improves the perovskite morphology, enlarging grain size and reducing the density of bulk defects and the bulk recombination. In the case of 0.75 mol% of doping, the beneficial effects do not just compensate for the deleterious one but increase performance further. Therefore, 0.75 mol% Co doping results in a significant improvement in the performance of NiOx-based inverted planar perovskite solar cells, and represents a good compromise to synthesize, and deposit, the inorganic material at low temperature, without losing the performance, due to the strong impact on the structural properties of the perovskite. This work highlights the importance of the interface from two different points of view, electrical and structural, recognizing the role of a low doping Co concentration, as a key to improve the inverted perovskite-based solar cells’ performance.
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Affiliation(s)
- Zahra Rezay Marand
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Ahmad Kermanpur
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Fathallah Karimzadeh
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Eva M. Barea
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
| | - Ehsan Hassanabadi
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Textile Engineering Department, Textile Excellence & Research Centers, Amirkabir University of Technology, Tehran 15916-34311, Iran
| | - Elham Halvani Anaraki
- Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111, Iran; (A.K.); (F.K.); (E.H.A.)
| | - Beatriz Julián-López
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
| | - Sofia Masi
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Correspondence: (S.M.); (I.M.-S.)
| | - Iván Mora-Seró
- Institute of Advanced Materials (INAM), Universitat Jaume I, Av. Sos Baynat, s/n, 12071 Castelló, Spain; (Z.R.M.); (E.M.B.); (E.H.); (B.J.-L.)
- Correspondence: (S.M.); (I.M.-S.)
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