High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS2 van der Waals Heterostructure

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V-1 s-1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV-visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.

Exploring the properties of Zr2CO2/GaS van der Waals heterostructures for optoelectronic applications

We investigate the structural, electronic, and optical properties of eight possible Zr2CO2/GaS van der Waals (vdW) heterostructures using first-principles calculations based on a hybrid functional. These structures display favorable stability, indicated by matching crystal structures and negative formation energies. In all considered configurations, these heterostructures act as indirect band gap semiconductors with a type-II band alignment, allowing efficient electron-hole separation. Optical studies reveal their suitability for optoelectronic applications. Zr2CO2/GaS under 4% biaxial compressive strain meets the criteria for photocatalytic water splitting, suggesting their potential for electronic and optoelectronic devices in the visible spectrum. Our findings present prospects for advanced photocatalytic materials and optical devices.

Dual-Junction Field-Effect Transistor with Ultralow Subthreshold Swing Approaching the Theoretical Limit

Metal-oxide-semiconductor field-effect transistors as basic electronic devices of integrated circuits have been greatly developed and widely used in the past decades. However, as the thickness of the conducting channel decreases, the interface electronic scattering between the gate oxide layer and the channel significantly impacts the performance of the transistor. To address this issue, van der Waals heterojunction field-effect transistors (vdWJFETs) have been proposed using two-dimensional semiconductors, which utilize the built-in electric field at the sharp van der Waals interface to regulate the channel conductance without the need of a complex gate oxide layer. In this study, a novel dual-junction vdWJFET composed of a MoS2 channel and a Te nanosheet gate has been developed. This device achieves an ultralow subthreshold swing (SS) and an extremely low current hysteresis, greatly surpassing the single-junction vdWJFET. In the transistor, the SS decreases from 475.04 to 68.3 mV dec-1, nearly approaching the theoretical limit of 60 mV dec-1 at room temperature. The pinch-off voltage (Vp) decreases from -4.5 to -0.75 V, with a current hysteresis of ∼10 mV and a considerable field-effect mobility (μ) of 36.43 cm2 V-1 s-1. The novel dual-junction vdWJFET provides a new approach to realize a transistor with a theoretical ideal SS and a negligible current hysteresis toward low-power electronic applications.

Large in-plane vibrational and optical anisotropy in natural 2D heterostructure abramovite

The design and formation of van der Waals (vdW) heterostructures with different two-dimensional (2D) materials provide an opportunity to create materials with extraordinary physical properties tailored toward specific applications. Mechanical exfoliation of natural vdW materials has been recognized as an effective way for producing high-quality ultrathin vdW heterostructures. Abramovite is one of such naturally occurring vdW materials, where the superlattice is composed of alternating Pb2BiS3 and SnInS4 2D material lattices. The forced commensuration between the two incommensurate constituent 2D material lattices induces in-plane structural anisotropy in the formed vdW heterostructure of abramovite, even though the individual 2D material lattices are isotropic in nature. Here, we show that ultrathin layers of vdW heterostructures of abramovite can be achieved by mechanical exfoliation of the natural mineral. Furthermore, the structural anisotropy induced highly anisotropic vibrational and optical responses of abramovite thin flakes are demonstrated by angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent third-harmonic generation. Our results not only establish abramovite as a promising natural vdW material with tailored linear and nonlinear optical properties for building future anisotropic integrated photonic devices, but also provide a deeper understanding of the origin of structural, vibrational and optical anisotropy in vdW heterostructures.

Natural 2D layered mineral cannizzarite with anisotropic optical responses

Cannizzarite is a naturally occurring mineral formed by van der Waals (vdW) stacking of alternating layers of PbS-like and Bi₂S₃-like two-dimensional (2D) materials. Although the PbS-type and Bi₂S₃-type 2D material layers are structurally isotropic individually, the forced commensuration between these two types of layers while forming the heterostructure of cannizzarite induces strong structural anisotropy. Here we demonstrate the mechanical exfoliation of natural cannizzarite mineral to obtain thin vdW heterostructures of PbS-type and Bi₂S₃-type atomic layers. The structural anisotropy induced anisotropic optical properties of thin cannizzarite flakes are explored through angle-resolved polarized Raman scattering, linear dichroism, and polarization-dependent anisotropic third-harmonic generation. Our study establishes cannizzarite as a new natural vdW heterostructure-based 2D material with highly anisotropic optical properties for realizing polarization-sensitive linear and nonlinear photonic devices for future on-chip optical computing and optical information processing.

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications

Molybdenum disulfide (MoS2) has attracted considerable research interest as a promising candidate for downscaling integrated electronics due to the special two-dimensional structure and unique physicochemical properties. However, it is still challenging to achieve large-area MoS2 monolayers with desired material quality and electrical properties to fulfill the requirement for practical applications. Recently, a variety of investigations have focused on wafer-scale monolayer MoS2 synthesis with high-quality. The 2D MoS2 field-effect transistor (MoS2-FET) array with different configurations utilizes the high-quality MoS2 film as channels and exhibits favorable performance. In this review, we illustrated the latest research advances in wafer-scale monolayer MoS2 synthesis by different methods, including Au-assisted exfoliation, CVD, thin film sulfurization, MOCVD, ALD, VLS method, and the thermolysis of thiosalts. Then, an overview of MoS2-FET developments was provided based on large-area MoS2 film with different device configurations and performances. The different applications of MoS2-FET in logic circuits, basic memory devices, and integrated photodetectors were also summarized. Lastly, we considered the perspective and challenges based on wafer-scale monolayer MoS2 synthesis and MoS2-FET for developing practical applications in next-generation integrated electronics and flexible optoelectronics.

Evolution of low-dimensional material-based field-effect transistors

Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.