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Li C, Wang L, Xu L, Ren X, Yao F, Lu J, Wang D, Liang Z, Huang P, Wu S, Jing H, Zhang Y, Dong G, Liu H, Ma C, Lyu Y, Wei X, Ren W, Wang K, Ye ZG, Chen F. Mn-inlaid antiphase boundaries in perovskite structure. Nat Commun 2024; 15:6735. [PMID: 39112446 PMCID: PMC11306794 DOI: 10.1038/s41467-024-51024-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2024] [Accepted: 07/23/2024] [Indexed: 08/10/2024] Open
Abstract
Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 μC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.
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Affiliation(s)
- Chao Li
- Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China
| | - Lingyan Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
| | - Liqiang Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China.
| | - Xuerong Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Fangzhou Yao
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China
| | - Jiangbo Lu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China
| | - Dong Wang
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China
| | | | - Ping Huang
- Laboratory for Complex, Collective and Critical phenomena (L3C), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Hongmei Jing
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China
| | - Yijun Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Guohua Dong
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Haixia Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Chuansheng Ma
- Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China
| | - Yinong Lyu
- The State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, China
| | - Xiaoyong Wei
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Ke Wang
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China
| | - Zuo-Guang Ye
- Department of Chemistry & 4D LABS, Simon Fraser University, Burnaby, B.C., Canada
| | - Feng Chen
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, China.
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Dai S, Xu L, Han K, Chen P, Wang K, Huang Z, Wu W, Chen F. Anomalous Lattice Evolution-Mediated Electrical Properties in Transparent KNN-Based Lead-Free Ferroelectric Films. Inorg Chem 2022; 61:19399-19406. [DOI: 10.1021/acs.inorgchem.2c03198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Affiliation(s)
- Song Dai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Liqiang Xu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Kun Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Pingfan Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Ke Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zhen Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, China
| | - Wenbin Wu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Condition, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Chen
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Condition, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, China
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Zhu K, Ge G, Yan F, Lin J, Bai H, Li G, Jiang H, Shen B, Zhai J, Chou X. Morphotropic Relaxor Boundary Construction Highly Boosts the Piezoelectric Properties of Bi-Based Lead-Free Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8115-8125. [PMID: 35119814 DOI: 10.1021/acsami.1c18936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
To achieve large electrostrain and low hysteresis, we further optimized a morphotropic phase boundary (MPB) by modulating its local polar symmetries. The construction of a morphotropic relaxor boundary (MRB) in thin films can be achieved by suitable introduction of Bi(Fe0.95Mn0.03Ti0.02)O3 into (Bi0.5Na0.5)TiO3-SrTiO3 to form a solid solution. The designed thin film achieves surprising piezoelectric properties with an inverse piezoelectric coefficient of 179.7 pm V-1 and negligible hysteresis. The composition of two relaxors with different local polar symmetries (tetragonal nanoregions and rhombohedral nanoregions), namely, an MRB, and the coexistence of multiscale domain structures can greatly weaken the anisotropy of polarization, degrade the energy barrier, attenuate the discontinuity of polarization, and achieve a large electrostrain and low hysteresis. The domain dynamics of the PNRs under the action of an external excitation field are analyzed to clarify the enhancement mechanism. This construction of MRBs is feasible for producing lead-free piezoelectric films with high-voltage electrical properties and low hysteresis, and various experimental design and theoretical references are provided.
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Affiliation(s)
- Kun Zhu
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Guanglong Ge
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Fei Yan
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Jinfeng Lin
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Hairui Bai
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Guohui Li
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Haitao Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Bo Shen
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Jiwei Zhai
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Xiujian Chou
- Key Laboratory of Instrumentation and Dynamic Measurement of Ministry of Education, North University of China, Taiyuan 030051, China
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Zhu K, Song B, Ge G, Lin J, Yan F, Xu L, Yan H, Shen B, Zhai J, Chou X. Construction of multi-domain coexistence enhanced piezoelectric properties of Bi0.5Na0.5TiO3-based thin films. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.05.050] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Yang M, Li S, Wang Y, Qi H, Lin K, Li Q, Xing X. Enhanced ferroelectricity in NaNbO 3–LaCoO 3:Mn epitaxial thin film. Inorg Chem Front 2021. [DOI: 10.1039/d1qi01041g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A (001)-oriented NaNbO3–LaCoO3:Mn ferroelectric thin film with enhanced tetragonal distortion and large remanent polarization (31 μC cm−2) achieved by chemical modification was successfully deposited on a SrRuO3-buffered LaAlO3 substrate.
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Affiliation(s)
- Mingdi Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Shan Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Yilin Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - He Qi
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
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