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Liu A, Ding J, Tan Q, Yang P, Liu Y, Wang Q. Ultrahigh-performance photodetectors based on low-dimensional Cs 2AgBiBr 6/CdS heterojunction. J Colloid Interface Sci 2024; 679:316-323. [PMID: 39366261 DOI: 10.1016/j.jcis.2024.09.245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2024] [Revised: 09/28/2024] [Accepted: 09/29/2024] [Indexed: 10/06/2024]
Abstract
Lead-free double perovskite Cs2AgBiBr6 has garnered increasing attention in photoelectric applications owing to its good stability and excellent photoelectric properties. However, the poor carrier transport in Cs2AgBiBr6 thin films constraints their further application in photodetection. To overcome this issue, we have developed an innovative low-dimensional Cs2AgBiBr6/CdS heterojunction photodetector with substantially improved performance. The device achieved a high responsivity of 6.66 × 103 A/W, an outstanding specific detectivity of 2.10 × 1014 Jones, and an impressive external quantum efficiency of 1.88 × 106 %. Additionally, the on/off current ratio of the heterojunction device reached an impressive 6.18 × 107. These key parameters are significantly better than those of most previously reported Cs2AgBiBr6-based photodetectors. Furthermore, scanning photocurrent mapping and band arrangement analysis were performed to elucidate the mechanism of photocurrent generation and transport in the low-dimensional Cs2AgBiBr6/CdS heterojunction photodetectors. This study highlights the outstanding performance of Cs2AgBiBr6/CdS heterojunction and provides a simple and effective strategy for developing high-performance Cs2AgBiBr6-based photodetectors.
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Affiliation(s)
- Aimin Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China
| | - Jun Ding
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China
| | - Qiuhong Tan
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China; Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, China; Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China.
| | - Peizhi Yang
- Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China
| | - Yingkai Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China; Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, China; Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China
| | - Qianjin Wang
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, China; Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming 650500, China; Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China.
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2
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Lv Z, Gao H, Hu Y, Fan Y, Pan G, Zhang H, You W, Zhang Z, Mao Y. Ultraviolet-Visible-Near-Infrared Broadband Photodetector Enabled by Cs 2AgBiBr 6: Sn/Conjugated Polymer Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:51055-51064. [PMID: 39276066 DOI: 10.1021/acsami.4c09281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2024]
Abstract
Broadband photodetectors covering ultraviolet (UV) to near-infrared (NIR) wavelengths play an essential role in communications, imaging, and biosensing. Developing a single photodetector with a broadband optical response operating at room temperature can significantly reduce the complexity and cost of receiver systems for multispectral applications. In this work, utilizing the porous structure characteristics of Cs2AgBiBr6:Sn thin films, a self-powered detector with broad spectral response (UV-vis-NIR) was achieved by constructing an effective Cs2AgBiBr6:Sn/PDPP3T heterojunction. This photodetector possesses a broad response spectrum from 350 to 950 nm with an average detection rate exceeding 1011 Jones and maintains excellent photoelectric performance over two months. Sn2+ doping effectively reduces the bandgap of Cs2AgBiBr6, enhancing its near-infrared absorption and optimizing energy level alignment with conjugated polymer (diketopyrrolopyrrole-terthiophene, PDPP3T). More importantly, the porous structure derived from Sn doping significantly improves carrier extraction and transport under a near-infrared light response at the heterojunction interface. Utilizing its broad spectral response characteristics in the UV-vis-NIR range, a novel information transfer and encryption system employing full optical modulation has been realized within a single perovskite photodetector. This work provides a new approach to fabricating lead-free double perovskite broadband photodetectors with potential applications in photonic devices.
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Affiliation(s)
- Zhipeng Lv
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huiping Gao
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yayong Hu
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yunpeng Fan
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Gencai Pan
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huafang Zhang
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Wenwu You
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Zhenlong Zhang
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Yanli Mao
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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Li X, Shi J, Chen J, Tan Z, Lei H. Lead-Free Halide Double Perovskite for High-Performance Photodetectors: Progress and Perspective. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4490. [PMID: 37374671 DOI: 10.3390/ma16124490] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 06/06/2023] [Accepted: 06/13/2023] [Indexed: 06/29/2023]
Abstract
Lead halide perovskite has become a promising candidate for high-performance photodetectors (PDs) due to its attractive optical and electrical properties, such as high optical absorption coefficient, high carrier mobility, and long carrier diffusion length. However, the presence of highly toxic lead in these devices has limited their practical applications and even hindered their progress toward commercialization. Therefore, the scientific community has been committed to searching for low-toxic and stable perovskite-type alternative materials. Lead-free double perovskite, which is still in the preliminary stage of exploration, has achieved inspiring results in recent years. In this review, we mainly focus on two types of lead-free double perovskite based on different Pb substitution strategies, including A2M(I)M(III)X6 and A2M(IV)X6. We review the research progress and prospects of lead-free double perovskite photodetectors in the past three years. More importantly, from the perspective of optimizing the inherent defects in materials and improving device performance, we propose some feasible pathways and make an encouraging perspective for the future development of lead-free double perovskite photodetectors.
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Affiliation(s)
- Xiaoyan Li
- College of Engineering, Huazhong Agricultural University, Wuhan 430070, China
| | - Junzhe Shi
- College of Engineering, Huazhong Agricultural University, Wuhan 430070, China
| | - Jianjun Chen
- College of Engineering, Huazhong Agricultural University, Wuhan 430070, China
| | - Zuojun Tan
- College of Engineering, Huazhong Agricultural University, Wuhan 430070, China
| | - Hongwei Lei
- College of Engineering, Huazhong Agricultural University, Wuhan 430070, China
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Roy M, Kaur A, Alam A, Aslam M. BiOBr Surface-Functionalized Halide Double-Perovskite Films for Slow Ion Migration and Improved Stability. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18473-18481. [PMID: 36976570 DOI: 10.1021/acsami.3c00369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Surface-tailored lead-free halide double-perovskite (Cs2AgBiX6) thin films are utilized for ion migration studies. A thin surface layer of BiOBr/Cl is grown via intentional annealing of the halide films in ambient conditions. Herein, we physically stacked the two films, viz., Cs2AgBiBr6 and Cs2AgBiCl6, to thermally activate the halide ion migration at different temperatures (room temperature (RT)-150 °C). While annealing, the films' color changes from orange to pale yellow and transparent brown to yellow as a result of the migration of Br- ions from Cs2AgBiBr6 to Cs2AgBiCl6 and Cl- ions from Cs2AgBiCl6 to Cs2AgBiBr6, respectively. Annealing helps in homogenizing the halide ions throughout the films, consequently leading to a mixed phase, i.e., Cs2AgBiClxBr6-x/Cs2AgBiBrxCl6-x (x = 0 to 6) formation. The movement of ions is understood by absorption studies performed at regular time intervals. These investigations reveal a redshift (from 366 to 386 nm) and a blueshift (from 435 to 386 nm) in absorption spectra, indicating the migration of Br- and Cl- toward Cs2AgBiCl6 and Cs2AgBiBr6, respectively. The films characterized using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal the presence of a peak at 2θ = 10.90° and binding energy of 158.1 eV, respectively, corresponding to the formation of Bi-O bonds at the film surface. Also, XRD studies show a lower 2θ shift of the diffraction peak in the case of Cs2AgBiCl6 films and a higher 2θ shift in the case of Cs2AgBiB6 films, which further confirms the migration of Cl- and Br- from one film to the other. XPS investigations confirm the compositional change with a gradual increment in the concentration of Br-/Cl- with an increase in heating time for Cs2AgBiCl6/Cs2AgBiBr6 films. All these studies confirm thermal diffusion of halide ions in double-perovskite films. Further, from the exponential decay of the absorption spectra, the rate constant for halide (Br) ion diffusion is calculated, which shows an increment from 1.7 × 10-6 s-1 at RT to 12.1 × 10-3 s-1 at 150 °C. The temperature-dependent rate constant follows Arrhenius behavior and renders an activation energy of 0.42 eV (0.35 eV) for bromide (chloride) ion mobility. A larger estimated value as compared to the reported values for Cs2AgBiBr6 wafers (∼0.20 eV) reveals a slow mobility of halide ions in thin films of Cs2AgBiBr6/Cl6. The formation of a BiOBr passivation layer at the surface of Cs2AgBiBr6 thin film might be one of the plausible causes of the slow anion diffusion in the present work. Slow ion migration is an indication that the films are stable and of high-quality.
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Affiliation(s)
- Mrinmoy Roy
- Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
| | - Amandeep Kaur
- Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
| | - Aftab Alam
- Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
| | - M Aslam
- Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India
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5
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Li B, Li H, Sun Y, Humphrey MG, Zhang C, Huang Z. Defect-Dependent Nonlinear Absorption in the Lead-Free Double-Perovskite Cs 2AgBiBr 6. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10858-10867. [PMID: 36802476 DOI: 10.1021/acsami.2c23266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Lead-free perovskites have attracted increasing attention because they can address the toxicity and instability problems inherent to lead-halide perovskites. Furthermore, the nonlinear optical (NLO) properties of lead-free perovskites are rarely explored. Herein, we report significant NLO responses and defect-dependent NLO behavior of Cs2AgBiBr6. Specifically, a thin film of pristine Cs2AgBiBr6 exhibits strong reverse saturable absorption (RSA), while a film of Cs2AgBiBr6 with defects (denoted as Cs2AgBiBr6(D)) shows saturable absorption (SA). The nonlinear absorption coefficients are ca. 4.0 × 104 cm GW-1 (515 nm laser excitation) and 2.6 × 104 cm GW-1 (800 nm laser excitation) for Cs2AgBiBr6 and -2.0 × 104 cm GW-1 (515 nm laser excitation) and -7.1 × 103 cm GW-1 (800 nm laser excitation) for Cs2AgBiBr6(D). The optical limiting threshold of Cs2AgBiBr6 is 8.1 × 10-4 J cm-2 (515 nm laser excitation). The samples show excellent long-term performance stability in air. The RSA of pristine Cs2AgBiBr6 correlates with excited-state absorption (515 nm laser excitation) and excited-state absorption following two-photon absorption (800 nm laser excitation), while the defects in Cs2AgBiBr6(D) strengthen the ground-state depletion and Pauli blocking, resulting in SA.
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Affiliation(s)
- Bingyue Li
- School of Chemical Science and Engineering, Tongji University, Shanghai 200092, P. R. China
| | - Hui Li
- School of Chemical Science and Engineering, Tongji University, Shanghai 200092, P. R. China
| | - Yanhui Sun
- School of Chemical Science and Engineering, Tongji University, Shanghai 200092, P. R. China
| | - Mark G Humphrey
- Research School of Chemistry, Australian National University, Canberra, ACT 2601, Australia
| | - Chi Zhang
- School of Chemical Science and Engineering, Tongji University, Shanghai 200092, P. R. China
| | - Zhipeng Huang
- School of Chemical Science and Engineering, Tongji University, Shanghai 200092, P. R. China
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Li Z, Li Z, Zuo C, Fang X. Application of Nanostructured TiO 2 in UV Photodetectors: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109083. [PMID: 35061927 DOI: 10.1002/adma.202109083] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
As a wide-bandgap semiconductor material, titanium dioxide (TiO2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2 -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2 -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.
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Affiliation(s)
- Ziliang Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziqing Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Chaolei Zuo
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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7
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Jiang S, Huang R, Li W, Huang X, Sheng H, Wu F, Lv Y, Fu Y, Zhao C, Mai W. Low-Temperature Vapor-Phase Anion-Exchange Strategy for Wide-Bandgap Double-Perovskite Cs 2AgBiCl 6 Films toward Weak Ultraviolet Light Imaging. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26279-26286. [PMID: 35616486 DOI: 10.1021/acsami.2c06008] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Low-temperature synthesis of high-quality, high-stability, wide-bandgap perovskite films by solution methods is still challenging. Herein, large-scale wide-bandgap Cs2AgBiCl6 (CABC) double perovskite films are synthesized by a vapor-phase anion-exchange strategy. By dedicatedly designing an ultrathin TiO2 modification layer between the substrate and double perovskites, high-quality heterojunctions with matched energy band alignment are formed, contributing to a remarkably enhanced ON/OFF ratio of 2.4 × 104 (86 times) and a responsivity of 16 mA W-1 (12 times). Additionally, the ultraviolet photodetectors (UV PDs) exhibit an excellent UV detection limit of 1.18 μW cm-2 (20 nW), a broad linear dynamic range of 146 dB, and a high specific detectivity of 2.06 × 1011 Jones, as well as long-term stability. Finally, we further demonstrate a weak UV imaging system using CABC UV PDs as imaging sensors. The system is capable of imaging weak UV signals as low as 2.94 μW cm-2 (50 nW). Our results provide a feasible approach for low-temperature fabrication of wide-bandgap perovskite UV PDs and explore the promising application for weak UV detection and imaging.
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Affiliation(s)
- Shaowei Jiang
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Rongqing Huang
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Wanjun Li
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Xinyue Huang
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Haigang Sheng
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Fei Wu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Yibo Lv
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Yong Fu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Chuanxi Zhao
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Wenjie Mai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
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Ghosh J, Sellin PJ, Giri PK. Recent advances in lead-free double perovskites for x-ray and photodetection. NANOTECHNOLOGY 2022; 33:312001. [PMID: 35443239 DOI: 10.1088/1361-6528/ac6884] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Accepted: 04/19/2022] [Indexed: 06/14/2023]
Abstract
Over the last decade, lead halide perovskites have attracted significant research attention in the field of photovoltaics, light-emitting devices, photodetection, ionizing radiation detection, etc, owing to their outstanding optoelectrical properties. However, the commercial applications of lead-based perovskite devices are restricted due to the poor ambient stability and toxicity of lead. The encapsulation of lead-based devices can reduce the possible leakage of lead. However, it is hard to ensure safety during large-scale production and long-term storage. Recently, considerable efforts have been made to design lead-free perovskites for different optoelectronic applications. Metal halide double perovskites with the general formula of A2MIMIIIX6or A2MIVX6could be potentially considered as green and stable alternatives for different optoelectronic applications. In this review article, we focus on the recent progress and findings on lead-free halide double perovskites for x-ray and UV-vis photodetection applications. Lead-free halide double perovskite has recently drawn a great deal of attention for superior x-ray detection due to its high absorption coefficient, large carrier mobility-lifetime product, and large bulk resistance. In addition, these materials exhibit good performance in photodetection in the UV-vis region due to high photocarrier generation and efficient carrier separation. In this review, first, we define the characteristics of lead-free double perovskite materials. The fundamental characteristics and beneficial properties of halide perovskites for direct and indirect x-ray detection are then discussed. We comprehensively review recent developments and efforts on lead-free double perovskite for x-ray detection and UV-vis photodetection. We bring out the current challenges and opportunities in the field and finally present the future outlook for developing lead-free double perovskite-based x-ray and UV-vis photodetectors for practical applications.
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Affiliation(s)
- Joydip Ghosh
- Department of Physics, University of Surrey, Guildford, Surrey, United Kingdom
| | - P J Sellin
- Department of Physics, University of Surrey, Guildford, Surrey, United Kingdom
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati-781039, India
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Xiao B, Tan Y, Yi Z, Luo Y, Jiang Q, Yang J. Band Matching Strategy for All-Inorganic Cs 2AgBiBr 6 Double Perovskite Solar Cells with High Photovoltage. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37027-37034. [PMID: 34323074 DOI: 10.1021/acsami.1c07169] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The lead-free double perovskite has been proven to be one of the promising alternatives to solve the stability and toxicity problems of lead-based organic-inorganic hybrid perovskite solar cells. Here, high-quality Cs2AgBiBr6 double perovskite films with large grains and smooth surface have been prepared through a sequential-vapor-deposition method, and a low-cost and eco-friendly Cu2O film with a suitable energy level and good electrical properties was prepared as an efficient hole transport layer by vacuum vapor deposition for the first time. The Cu2O-based devices achieve a champion power conversion efficiency increasing from 1.03 to 1.52% and an enhancement of photovoltage from 1.083 to 1.198 V compared with their organic counterparts. More importantly, the Cu2O-based devices have excellent stability; they maintained the initial 96% efficiency under environmental conditions after 33 days of unpackaged storage. These results also point out the direction for the further development of these new promising perovskite solar cells.
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Affiliation(s)
- Bo Xiao
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yao Tan
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Zijun Yi
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yubo Luo
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Qinghui Jiang
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Junyou Yang
- State Key Laboratory of Material Processing and Die & Mould Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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10
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Li H, Pi C, Chen W, Zhou M, Wei J, Yi J, Song P, Alexey Y, Zhong Y, Yu X, Qiu J, Xu X. A Highly Stable Photodetector Based on a Lead-Free Double Perovskite Operating at Different Temperatures. J Phys Chem Lett 2021; 12:5682-5688. [PMID: 34114825 DOI: 10.1021/acs.jpclett.1c01416] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In recent years, considerable breakthroughs have been achieved in the explored photodetectors with improved performance and stability. However, such devices suffer from the drifting parameters (photoresponsivity, response time, and specific detectivity) in the case of evident operating temperature changes. Here, a double perovskite Cs2NaBiCl6-based ultraviolet (UV) photodetector is developed free from thermal disturbance, exhibiting a steady photoresponsivity (≈ 67.98 mA/W) and response time (≈ 16.42 ms) within a wide temperature range (from 273 to 333 K). Further studies demonstrate that the stability of the crystal structure endows the superior photodetection capability. This result unambiguously highlights the great potential of such double perovskite Cs2NaBiCl6 compound as an environmentally friendly alternative for UV photodetectors.
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Affiliation(s)
- Hao Li
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Chaojie Pi
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Weiqing Chen
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Min Zhou
- College of Physical Science and Technology, Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225002, Jiangsu, China
| | - Jumeng Wei
- College of Chemistry and Materials Engineering, Anhui Science and Technology University, Bengbu 233030, Anhui, China
| | - Jianhong Yi
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Peng Song
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Yakovlev Alexey
- Kuzbass State Technical University, 28 Vesennyaya Street, 650000 Kemerovo, Russia
| | - Yang Zhong
- College of Advanced Manufacturing Technologies, Tomsk Polytechnic University, 2a Lenin Avenue, 634050 Tomsk, Russia
| | - Xue Yu
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Jianbei Qiu
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
| | - Xuhui Xu
- College of Materials Science and Engineering, Key Laboratory of Advanced Materials of Yunnan Province, Kunming University of Science and Technology, Kunming 650093, Yunnan, China
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Li Y, Shi Z, Liang W, Ma J, Chen X, Wu D, Tian Y, Li X, Shan C, Fang X. Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives. MATERIALS HORIZONS 2021; 8:1367-1389. [PMID: 34846447 DOI: 10.1039/d0mh01567a] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb2+, including AB(ii)X3, A3B(iii)2X9, A2B(i)B(iii)'X6, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.
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Affiliation(s)
- Ying Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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Li Z, Wang P, Ma C, Igbari F, Kang Y, Wang KL, Song W, Dong C, Li Y, Yao J, Meng D, Wang ZK, Yang Y. Single-Layered MXene Nanosheets Doping TiO 2 for Efficient and Stable Double Perovskite Solar Cells. J Am Chem Soc 2021; 143:2593-2600. [PMID: 33535753 DOI: 10.1021/jacs.0c12739] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
The inorganic lead-free Cs2AgBiBr6 double perovskite structure is the promising development direction in perovskite solar cells (PSCs) to solve the problem of the instability of the APbX3 structure and lead toxicity. However, the low short-circuit current and power conversion efficiency (PCE) caused by the low crystallization of Cs2AgBiBr6 greatly limit the optoelectronic application. Herein, we adopt a simple strategy to dope single-layered MXene nanosheets into titania (Ti3C2Tx@TiO2) as a multifunctional electron transport layer for stable and efficient Cs2AgBiBr6 double PSCs. The single-layered MXene nanosheets significantly improve the electrical conductivity and electron extraction rate of TiO2; meanwhile, the single-layered MXene nanosheets change the surface wettability of the electron transport layer and promote the crystallization of the Cs2AgBiBr6 double perovskite in solar cell devices. Therefore, the PCE went up by more than 40% to 2.81% compared to that of a TiO2 based device, and the hysteresis was greatly suppressed. Furthermore, the device based on Ti3C2Tx@TiO2 showed the long-term operating stability. After storing the device for 15 days under ambient air conditions, the PCE still remained a retention rate of 93% of the initial one. Our finding demonstrates the potential of Ti3C2Tx@TiO2 in electron transfer material of high-performance double PSCs.
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Affiliation(s)
- Zhenxing Li
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Ping Wang
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Chang Ma
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China.,BTR New Energy Materials Inc., Bao'an District, Shenzhen 518106, China
| | - Femi Igbari
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Yikun Kang
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Kai-Li Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Weiyu Song
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Chong Dong
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Yanjie Li
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Jiasai Yao
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum (Beijing), Beijing 102249, China
| | - Dong Meng
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
| | - Zhao-Kui Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| | - Yang Yang
- Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States
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Wang HP, Li S, Liu X, Shi Z, Fang X, He JH. Low-Dimensional Metal Halide Perovskite Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003309. [PMID: 33346383 DOI: 10.1002/adma.202003309] [Citation(s) in RCA: 160] [Impact Index Per Article: 53.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2020] [Revised: 07/21/2020] [Indexed: 05/24/2023]
Abstract
Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.
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Affiliation(s)
- Hsin-Ping Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xinya Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
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