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Ding Y, Xiong S, Sun L, Wang Y, Zhou Y, Li Y, Peng J, Fukuda K, Someya T, Liu R, Zhang X. Metal nanowire-based transparent electrode for flexible and stretchable optoelectronic devices. Chem Soc Rev 2024; 53:7784-7827. [PMID: 38953906 DOI: 10.1039/d4cs00080c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
High-quality transparent electrodes are indispensable components of flexible optoelectronic devices as they guarantee sufficient light transparency and electrical conductivity. Compared to commercial indium tin oxide, metal nanowires are considered ideal candidates as flexible transparent electrodes (FTEs) owing to their superior optoelectronic properties, excellent mechanical flexibility, solution treatability, and higher compatibility with semiconductors. However, certain key challenges associated with material preparation and device fabrication remain for the practical application of metal nanowire-based electrodes. In this review, we discuss state-of-the-art solution-processed metal nanowire-based FTEs and their applications in flexible and stretchable optoelectronic devices. Specifically, the important properties of FTEs and a cost-benefit analysis of existing technologies are introduced, followed by a summary of the synthesis strategy, key properties, and fabrication technologies of the nanowires. Subsequently, we explore the applications of metal-nanowire-based FTEs in different optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Finally, the current status, future challenges, and emerging strategies in this field are presented.
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Affiliation(s)
- Yu Ding
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
| | - Sixing Xiong
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
| | - Lulu Sun
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Yiying Wang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Yinhua Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yaowen Li
- College of Chemistry, Soochow University, Suzhou 215123, P. R. China
| | - Jun Peng
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Kenjiro Fukuda
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Takao Someya
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
- Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Ruiyuan Liu
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
| | - Xiaohong Zhang
- Soochow Institute of Energy and Material Innovations, Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Institute of Functional Nano and Soft Materials (FUNSOM) and College of Energy, Soochow University, Suzhou 215006, P. R. China.
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou 215006, P. R. China
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Cho IW, Kim GY, Kim S, Lee YJ, Oh J, Ryu MY, Lee J, Lee MS, Jang SY, Lee K, Kang H. Naphthalene Diimide-Modified SnO 2 Enabling Low-Temperature Processing for Efficient ITO-Free Flexible Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402425. [PMID: 39007453 DOI: 10.1002/smll.202402425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 05/22/2024] [Indexed: 07/16/2024]
Abstract
A low-cost and indium-tin-oxide (ITO)-free electrode-based flexible perovskite solar cell (PSC) that can be fabricated by roll-to-roll processing shall be developed for successful commercialization. High processing temperatures present a challenge for the PSC fabrication on flexible substrates. The most efficient planar n-i-p PSC structures, which utilize a metal oxide as an electron transport layer (ETL), necessitate high annealing temperatures. In addition, the device performance deteriorates owing to the migration of halogen ions, which causes the oxidation of the metal electrodes. These drawbacks conflict with the development of highly efficient flexible PSCs fabricated on ITO-free transparent electrodes. Herein, an efficient ETL material that enables low-temperature processing is presented. Tin dioxide (SnO2) is modified by (sulfobetaine-N,N-dimethylamino)propyl naphthalene diimide (NDI-B) and used as an ETL. The NDI-B effectively reduces the interfacial nonradiative recombination between the ETL and perovskite and suppresses the ion migration by passivating oxygen-vacancy defects in SnO2 and strongly interacting with halogen ions, respectively. Based on the NDI-B-blended SnO2 ETL, a record PCE of 17.48% is achieved in the ITO-free flexible PSC fabricated at low temperature.
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Affiliation(s)
- Il-Wook Cho
- Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
- Department of Physics, Kangwon National University, 1, Gangwondaehak-gil, Chuncheon-si, 24341, Republic of Korea
| | - Ga Yeon Kim
- Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Sangcho Kim
- Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Yu-Jun Lee
- Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Jaewon Oh
- Department of Physics, Kangwon National University, 1, Gangwondaehak-gil, Chuncheon-si, 24341, Republic of Korea
| | - Mee-Yi Ryu
- Department of Physics, Kangwon National University, 1, Gangwondaehak-gil, Chuncheon-si, 24341, Republic of Korea
| | - Jinho Lee
- Department of Physics, Incheon National University, 119 Academy-ro, Incheon, 22012, Republic of Korea
| | - Min Soo Lee
- MSWAY CO, LTD., 801-1, 30, Digital-ro 32-gil, Guro-gu, Seoul, 08390, Republic of Korea
| | - Soo-Young Jang
- Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Kwanghee Lee
- Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
| | - Hongkyu Kang
- Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology (GIST), 123, Cheomdangwagi-ro, Buk-gu, Gwangju, 61005, Republic of Korea
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3
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Lee KH, Farheen R, Arshad Z, Ali M, Hassan H, Alshareef M, A Dahshan, Khalid U. Optimized Cu-doping in ZnO electro-spun nanofibers for enhanced photovoltaic performance in perovskite solar cells and photocatalytic dye degradation. RSC Adv 2024; 14:15391-15407. [PMID: 38741976 PMCID: PMC11089536 DOI: 10.1039/d4ra01544d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Accepted: 05/06/2024] [Indexed: 05/16/2024] Open
Abstract
Perovskite solar cells (PSCs) compete with conventional solar cells regarding their low-temperature processing and suitable power conversion efficiency. In PSCs, the electron transport layer (ETL) plays a vital role in charge extraction and avoiding recombination; however, poor charge transport of ETL leads to high internal resistance and associated low fill factors. To successfully resolve this challenge, copper-doped zinc oxide nanofibers as an electron transport layer are prepared with various doping levels of 1, 2, and 3 wt% using the electrospinning sol-gel method. The 3 wt% doping of Cu revealed the optimum performance as an ETL, as it offers an electrically efficient transporting structure. SEM images revealed a randomly oriented distribution of nanofibers with different sizes having mesoporous uniformity. Optical properties of doped nanofibers examined using UV-visible analysis showed an extended light absorption due to heteroatom-doping. Adding Cu into the ZnO leads to enhanced charge mobility across the electron transport material. According to Hall measurements, dopant concentration favors the conductivity and other features essentially required for charge extraction and transport. The solar cell efficiency of ZnO doped with 0%, 1%, 2%, and 3% Cu is 4.94%, 5.97%, 6.89%, and 9.79%, respectively. The antibacterial and photocatalytic activities of the prepared doped and undoped ZnO are also investigated. The better light absorption of Cu-ZnO showed a pronounced improvement in the photocatalytic activity of textile electrodes loaded with doped ZnO. The dye degradation rate reaches 95% in 180 min under visible light. In addition, these textile electrodes showed strong antibacterial activity due to the production of reactive oxygen species under light absorption.
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Affiliation(s)
- Kang Hoon Lee
- Department of Energy and Environment Engineering, Catholic University Korea
| | - Rabeea Farheen
- Department of Physics, Government College Women University Faisalabad Pakistan
| | - Zafar Arshad
- School of Engineering and Technology, National Textile University 37640 Faisalabad Pakistan
| | - Mumtaz Ali
- School of Engineering and Technology, National Textile University 37640 Faisalabad Pakistan
- Department of Organic and Nano Engineering, Hanyang University 222 Wangsimni-ro, Seongdong-gu Seoul 04763 Republic of Korea
| | - Hamza Hassan
- Department of Chemical Engineering, University of Engineering and Technology Peshawar Pakistan
| | - Mubark Alshareef
- Department of Chemistry, Faculty of Applied Science, Umm Al Qura University Makkah 24230 Saudi Arabia
| | - A Dahshan
- Department of Physics, College of Science, King Khalid University Abha Saudi Arabia
| | - Usama Khalid
- School of Engineering and Technology, National Textile University 37640 Faisalabad Pakistan
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Zainal Abidin NA, Arith F, Noorasid NS, Sarkawi H, Mustafa AN, Safie NE, Shah ASM, Azam MA, Chelvanathan P, Amin N. Dopant engineering for ZnO electron transport layer towards efficient perovskite solar cells. RSC Adv 2023; 13:33797-33819. [PMID: 38020037 PMCID: PMC10654892 DOI: 10.1039/d3ra04823c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 10/30/2023] [Indexed: 12/01/2023] Open
Abstract
The conventional electron transport layer (ETL) TiO2 has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO2 ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn2+ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.
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Affiliation(s)
- Nurul Aliyah Zainal Abidin
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - Faiz Arith
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - N Syamimi Noorasid
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - Hafez Sarkawi
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - A Nizamuddin Mustafa
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
- Department of Materials, Faculty of Engineering, Imperial College London London SW7 2AZ UK
| | - N E Safie
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - A S Mohd Shah
- Department of Electrical Engineering, College of Engineering, Universiti Malaysia Pahang Lebuhraya Tun Razak, Gambang Kuantan Pahang 26300 Malaysia
| | - M A Azam
- Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka 76100 Durian Tunggal Melaka Malaysia
- Center for Promotion of Educational Innovation, Shibaura Institute of Technology 3-7-5 Toyosu, Koto-ku Tokyo 135-8548 Japan
| | | | - Nowshad Amin
- Department of Electrical and Electronic Engineering, University of Science Engineering and Technology (USTC) Foy's Lake Chattogram 4202 Bangladesh
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Zhao Y, Kang J, Huang W, Kong P, An D, He G. Copper Nanowire/Polydopamine-Modified Sodium Alginate Composite Films with Enhanced Long-Term Stability and Adhesion for Flexible Organic Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37917355 DOI: 10.1021/acsami.3c13443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Copper nanowire (CuNW), with combined advantages of high conductivity and cost-effectiveness, is considered a promising material for the development of next-generation transparent conductive films (TCFs) in the field of flexible optoelectronics. However, the practical application of CuNW TCFs is hindered by some limitations, such as conductivity degradation and poor adhesion. Here, we demonstrate a stable CuNW composite film by embedding CuNWs into a polydopamine (PDA)-modified sodium alginate (NaAlg) matrix without sacrificing the optoelectronic properties of the CuNW network. The introduction of the PDA modifier significantly enhances the antiaging capability of the NaAlg layer, providing strengthened protection of the embedded CuNWs against moisture and oxygen, thereby resulting in minimal degradation of the conductivity of CuNWs for up to 9 months under ambient conditions. Simultaneously, the interface adhesion between the CuNW network and the substrate is further enhanced due to the abundance of catechol structures in PDA, allowing for the maintenance of the electrical conductivity of the CuNW network even under cyclic external bending stress and tape-peeling forces. In addition, embedding CuNWs into the polymer binding layer produces a CuNW composite film with a very smooth surface. A flexible OLED based on the PDA-modified NaAlg/CuNW TCF is successfully fabricated, exhibiting performance comparable to that of a traditional rigid indium tin oxide-based device, while also demonstrating remarkable mechanical durability. The modification strategy can promote practical applications of the CuNW network in flexible optoelectronic devices.
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Affiliation(s)
- Yu Zhao
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Jiachen Kang
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Wenzhe Huang
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Peng Kong
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Di An
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Gufeng He
- Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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Wang B, Yu S, Huang L. Zinc Oxide-Encapsulated Copper Nanowires for Stable Transparent Conductors. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2659. [PMID: 37836300 PMCID: PMC10574395 DOI: 10.3390/nano13192659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 09/16/2023] [Accepted: 09/26/2023] [Indexed: 10/15/2023]
Abstract
Cu nanowire (NW)-based transparent conductors are considered to be highly promising constituents of next-generation flexible transparent electronics. However, the fast oxidation of copper under ambient conditions hinders the use of Cu NWs. Herein, we demonstrate a low-cost and scalable approach for preparing a ZnO shell on the surface of Cu NWs under ambient conditions. The covered ZnO shells enhance the oxidative stability of Cu NWs. The optical and electrical properties of ZnO@Cu NWs remain similar to the original performance of the Cu NWs (for example, before encapsulating: 13.5 Ω/sq. at 84.3%, after encapsulating: 19.2 Ω/sq. at 86.7%), which indicates that encapsulation with a ZnO shell enables the preservation of the transparency and conductivity of Cu NW networks. More importantly, the ZnO@Cu NWs exhibit excellent stability in terms of long-term storage, hot/humid environments, and strong oxidizing atmosphere/solution.
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Affiliation(s)
- Bo Wang
- Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China;
| | - Shihui Yu
- Department of Electrical Engineering and Automation, Luoyang Institute of Science and Technology, Luoyang 471023, China;
| | - Liang Huang
- National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
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Nazir G, Lee SY, Lee JH, Rehman A, Lee JK, Seok SI, Park SJ. Stabilization of Perovskite Solar Cells: Recent Developments and Future Perspectives. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204380. [PMID: 36103603 DOI: 10.1002/adma.202204380] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Exceptional power conversion efficiency (PCE) of 25.7% in perovskite solar cells (PSCs) has been achieved, which is comparable with their traditional rivals (Si-based solar cells). However, commercialization-worthy efficiency and long-term stability remain a challenge. In this regard, there are increasing studies focusing on the interface engineering in PSC devices to overcome their poor technical readiness. Herein, the roles of electrode materials and interfaces in PSCs are discussed in terms of their PCEs and perovskite stability. All the current knowledge on the factors responsible for the rapid intrinsic and external degradation of PSCs is presented. Then, the roles of carbonaceous materials as substitutes for noble metals are focused on, along with the recent research progress in carbon-based PSCs. Furthermore, a sub-category of PSCs, that is, flexible PSCs, is considered as a type of exceptional power source due to their high power-to-weight ratios and figures of merit for next-generation wearable electronics. Last, the future perspectives and directions for research in PSCs are discussed, with an emphasis on their commercialization.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
| | - Seul-Yi Lee
- Department of Chemistry, Inha University, Incheon, 22212, Republic of Korea
- Department of Mechanical Engineering and Institute for Critical Technology and Applied Science, Virginia Tech, Blacksburg, VA, 24061, USA
| | - Jong-Hoon Lee
- Department of Chemistry, Inha University, Incheon, 22212, Republic of Korea
| | - Adeela Rehman
- Department of Chemistry, Inha University, Incheon, 22212, Republic of Korea
| | - Jung-Kun Lee
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA, 15260, USA
| | - Sang Il Seok
- Department of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Soo-Jin Park
- Department of Chemistry, Inha University, Incheon, 22212, Republic of Korea
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Zeng X, He P, Hu M, Zhao W, Chen H, Liu L, Sun J, Yang J. Copper inks for printed electronics: a review. NANOSCALE 2022; 14:16003-16032. [PMID: 36301077 DOI: 10.1039/d2nr03990g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Conductive inks have attracted tremendous attention owing to their adaptability and the convenient large-scale fabrication. As a new type of conductive ink, copper-based ink is considered to be one of the best candidate materials for the conductive layer in flexible printed electronics owing to its high conductivity and low price, and suitability for large-scale manufacturing processes. Recently, tremendous progress has been made in the preparation of cooper-based inks for electronic applications, but the antioxidation ability of copper-based nanomaterials within inks or films, that is, long-term reliability upon exposure to water and oxygen, still needs more exploration. In this review, we present a comprehensive overview of copper inks for printed electronics from ink preparation, printing methods and sintering, to antioxidation strategies and electronic applications. The review begins with an overview of the development of copper inks, followed by a demonstration of various preparation methods for copper inks. Then, the diverse printing techniques and post-annealing strategies used to fabricate conductive copper patterns are discussed. In addition, antioxidation strategies utilized to stabilize the mechanical and electrical properties of copper nanomaterials are summarized. Then the diverse applications of copper inks for electronic devices, such as transparent conductive electrodes, sensors, optoelectronic devices, and thin-film transistors, are discussed. Finally, the future development of copper-based inks and the challenges of their application in printed electronics are discussed.
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Affiliation(s)
- Xianghui Zeng
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Pei He
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Minglu Hu
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Weikai Zhao
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Huitong Chen
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Longhui Liu
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Jia Sun
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
| | - Junliang Yang
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, 410083, Hunan, People's Republic of China.
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Guo S, Qiao S, Liu J, Ma J, Wang S. Greatly improved photoresponse in the MAPbBr 3/Si heterojunction by introducing an ITO layer and optimizing MAPbBr 3 layer thickness. OPTICS EXPRESS 2022; 30:11536-11548. [PMID: 35473096 DOI: 10.1364/oe.453909] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Accepted: 03/12/2022] [Indexed: 06/14/2023]
Abstract
In this paper, a CH3NH3(MA)PbBr3/Si heterojunction photodetector (PD) is prepared, and a simple method is proposed to improve the performance by introducing an ITO conductive layer and modulating thickness of the MAPbBr3 layer. The results indicate that the MAPbBr3/Si heterojunction PD exhibits an ultra-broadband photoresponse ranging from 405 to 1064 nm, and excellent performances with the responsivity (R) of 0.394 mA/W, detectivity (D) of 0.11×1010 Jones, and response times of ∼2176/∼257 ms. When adding the ITO layer, the R and D are greatly improved to 0.426 A/W and 5.17×1010 Jones, which gets an increment of 1.08×105% and 4.7×103%, respectively. Meanwhile, the response times are reduced to ∼130/∼125 ms, and a good environmental stability is obtained. Moreover, it is found that the photoresponse is strongly dependent on the thickness of the MAPbBr3 layer. By modulating the MAPbBr3 layer thickness from ∼85 to ∼590 nm, the performances are further improved with the best R of ∼0.87 A/W, D of ∼1.92×1011 Jones, and response times of ∼129/∼130 ms achieved in the ∼215 nm-thick PD.
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10
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Chen TW, Ramachandran R, Chen SM, Anushya G, Divya Rani S, Mariyappan V, Elumalai P, Vasimalai N. High-Performance-Based Perovskite-Supported Nanocomposite for the Development of Green Energy Device Applications: An Overview. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1006. [PMID: 33919855 PMCID: PMC8070796 DOI: 10.3390/nano11041006] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Revised: 04/07/2021] [Accepted: 04/08/2021] [Indexed: 11/16/2022]
Abstract
Perovskite-based electrode catalysts are the most promising potential candidate that could bring about remarkable scientific advances in widespread renewable energy-storage devices, especially supercapacitors, batteries, fuel cells, solid oxide fuel cells, and solar-cell applications. This review demonstrated that perovskite composites are used as advanced electrode materials for efficient energy-storage-device development with different working principles and various available electrochemical technologies. Research efforts on increasing energy-storage efficiency, a wide range of electro-active constituents, and a longer lifetime of the various perovskite materials are discussed in this review. Furthermore, this review describes the prospects, widespread available materials, properties, synthesis strategies, uses of perovskite-supported materials, and our views on future perspectives of high-performance, next-generation sustainable-energy technology.
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Affiliation(s)
- Tse-Wei Chen
- Department of Materials, Imperial College London, London SW7 2AZ, UK;
| | - Rasu Ramachandran
- Department of Chemistry, The Madura College, Vidya Nagar, Madurai 625011, India;
| | - Shen-Ming Chen
- Electroanalysis and Bioelectrochemistry Lab, Department of Chemical Engineering and Biotechnology, National Taipei, University of Technology, No.1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan;
| | - Ganesan Anushya
- Department of Physics, S.A.V. Sahaya Thai Arts and Science (Women) College, Sahayam Nagar, Kumarapuram Road, Vadakkankulam, Tirunelveli 627116, India;
| | | | - Vinitha Mariyappan
- Electroanalysis and Bioelectrochemistry Lab, Department of Chemical Engineering and Biotechnology, National Taipei, University of Technology, No.1, Section 3, Chung-Hsiao East Road, Taipei 106, Taiwan;
| | - Perumal Elumalai
- Department of Green Energy Technology, Pondicherry University, Puducherry 605014, India;
| | - Nagamalai Vasimalai
- Department of Chemistry, B.S. Abdur Rahman Cresecent Institute of Science and Technology, Chennai 600048, India;
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Wang C, Li Y, Gong F, Zhang Y, Fang S, Zhang H. Advances in Doped ZnO Nanostructures for Gas Sensor. CHEM REC 2020; 20:1553-1567. [DOI: 10.1002/tcr.202000088] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Revised: 09/11/2020] [Accepted: 09/14/2020] [Indexed: 12/27/2022]
Affiliation(s)
- Chao‐Nan Wang
- College of Materials and Chemical Engineering Zhengzhou University of Light Industry Zhengzhou 450002 P. R. China
| | - Yu‐Liang Li
- College of Materials and Chemical Engineering Zhengzhou University of Light Industry Zhengzhou 450002 P. R. China
| | - Fei‐Long Gong
- College of Materials and Chemical Engineering Zhengzhou University of Light Industry Zhengzhou 450002 P. R. China
| | - Yong‐Hui Zhang
- College of Materials and Chemical Engineering Zhengzhou University of Light Industry Zhengzhou 450002 P. R. China
| | - Shao‐Ming Fang
- College of Materials and Chemical Engineering Zhengzhou University of Light Industry Zhengzhou 450002 P. R. China
| | - Hao‐Li Zhang
- State Key Laboratory of Applied Organic Chemistry (SKLAOC) Key Laboratory of Special Function Materials and Structure Design (MOE) College of Chemistry and Chemical Engineering Lanzhou University Lanzhou 730000 P. R. China
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