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Liu B, Xiong J, Kan X, Liu S, Yang Z, Wang W, Zhao X, Yu Q, Zhu S, Wu J. External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles. Phys Chem Chem Phys 2024; 26:16883-16890. [PMID: 38833213 DOI: 10.1039/d4cp00482e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.
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Affiliation(s)
- Bin Liu
- College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Jingxian Xiong
- College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
| | - Xuefen Kan
- School of Transportation Engineering, Jiangsu Shipping College, Nantong 226010, China
| | - Sheng Liu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Zixin Yang
- College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
| | - Wenjing Wang
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
| | - Xinxin Zhao
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Qiang Yu
- College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and NanoBionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Sicong Zhu
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, The State Key Laboratory for Refractories and Metallurgy, Collaborative Innovation Center for Advanced Steels, International Research Institute for Steel Technology, Wuhan University of Science and Technology, Wuhan 430081, China.
- Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha 410073, China.
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Huan C, Cai Y, Kripalani DR, Zhou K, Ke Q. Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state. NANOSCALE HORIZONS 2023; 8:404-411. [PMID: 36723237 DOI: 10.1039/d2nh00573e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials tend to have the preferable formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermodynamically initiates from the interior part of the 2D backbone of germanium selenide (γ-GeSe). Interestingly, the Ge-vacancy (VGe) in the interior part of γ-GeSe possesses the lowest formation energy amongst the various types of defects considered. We also find a low diffusion barrier (1.04 eV) of VGe, which is half of those of sulfur vacancies in MoS2. The facile formation of mobile VGe is rooted in the antibonding coupling of the lone-pair Ge 4s and Se 4p states near the valence band maximum, which also exists in other gamma-phase MX (M = Sn, Ge; X = S, Te). The VGe is accompanied by a shallow acceptor level in the band gap and induces strong infrared light absorption and p-type conductivity. The VGe located in the middle cationic Ge sublattice is well protected by the surface Se layers - a feature that is absent in other atomically thin materials. Our work suggests that the unique well-buried inner VGe, with the potential of forming structurally protected ultrathin conducting filaments, may render the GeSe layer an ideal platform for quantum emitting, memristive, and neuromorphic applications.
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Affiliation(s)
- Changmeng Huan
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China.
| | - Devesh R Kripalani
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Kun Zhou
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Qingqing Ke
- School of Microelectronics Science and Technology, Sun Yat-sen university, Zhuhai 519082, China.
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai 519082, China
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Yang Y, Li F. 2D boron-nitride featuring B4 tetrahedros: An efficient photocatalyst for water splitting. MOLECULAR CATALYSIS 2022. [DOI: 10.1016/j.mcat.2022.112662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Das SR, Wakabayashi K, Tsukagoshi K, Dutta S. Ab-initio investigation of preferential triangular self-formation of oxide heterostructures of monolayer [Formula: see text]. Sci Rep 2020; 10:21737. [PMID: 33303881 PMCID: PMC7729869 DOI: 10.1038/s41598-020-78812-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Accepted: 12/01/2020] [Indexed: 11/17/2022] Open
Abstract
Triangular growth patterns of pristine two-dimensional (2D) transition metal dichalcogenides (TMDs) are ubiquitous in experiments. Here, we use first-principles calculations to investigate the growth of triangular shaped oxide islands upon layer-by-layer controlled oxidation in monolayer and few-layer [Formula: see text] systems. Pristine 2D TMDs with a trigonal prismatic geometry prefer the triangular growth morphology due to structural stability arising from the edge chalcogen atoms along its three sides. Our ab-initio energetics and thermodynamic study show that, since the Se atoms are more susceptible to oxygen replacement, the preferential oxidation happens along the Se zigzag lines, producing triangular islands of transition metal oxides. The thermodynamic stability arising from the preferential triangular self-formation of TMD based oxide heterostructures and their electronic properties opens a new avenue for their exploration in advanced electronic and optoelectronic devices.
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Affiliation(s)
- Soumya Ranjan Das
- Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati, Andhra Pradesh 517507 India
| | - Katsunori Wakabayashi
- Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337 Japan
- WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044 Japan
| | - Kazuhito Tsukagoshi
- WPI Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, 305-0044 Japan
| | - Sudipta Dutta
- Department of Physics, Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati, Andhra Pradesh 517507 India
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Hajra D, Sailus R, Blei M, Yumigeta K, Shen Y, Tongay S. Epitaxial Synthesis of Highly Oriented 2D Janus Rashba Semiconductor BiTeCl and BiTeBr Layers. ACS NANO 2020; 14:15626-15632. [PMID: 33090763 DOI: 10.1021/acsnano.0c06434] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The family of layered BiTeX (X = Cl, Br, I) compounds are intrinsic Janus semiconductors with giant Rashba-splitting and many exotic surface and bulk physical properties. To date, studies on these materials required mechanical exfoliation from bulk crystals which yielded thick sheets in nonscalable sizes. Here, we report epitaxial synthesis of Janus BiTeCl and BiTeBr sheets through a nanoconversion technique that can produce few triple layers of Rashba semiconductors (<10 nm) on sapphire substrates. The process starts with van der Waals epitaxy of Bi2Te3 sheets on sapphire and converts these sheets to BiTeCl or BiTeBr layers at high temperatures in the presence of chemically reactive BiCl3/BiBr3 inorganic vapor. Systematic Raman, XRD, SEM, EDX, and other studies show that highly crystalline BiTeCl and BiTeBr sheets can be produced on demand. Atomic level growth mechanism is also proposed and discussed to offer further insights into growth process steps. Overall, this work marks the direct deposition of 2D Janus Rashba materials and offers pathways to synthesize other Janus compounds belonging to MXY family members.
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Affiliation(s)
- Debarati Hajra
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
- Department of Physics, Arizona State University, Tempe, Arizona 85287, United States
| | - Renee Sailus
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Mark Blei
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Kentaro Yumigeta
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
- Department of Physics, Arizona State University, Tempe, Arizona 85287, United States
| | - Yuxia Shen
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Sefaattin Tongay
- Materials Science and Engineering, School for Engineering of Matter Transport of Energy, Arizona State University, Tempe, Arizona 85287, United States
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