Flexible and Giant Terahertz Modulation Based on Ultra-Strain-Sensitive Conductive Polymer Composites

Impact of the uniaxial strain on terahertz modulation characteristics in flexible epitaxial VO2 film across the phase transition

Exploring flexible electronics is on the verge of innovative breakthroughs in terahertz (THz) communication technology. Vanadium dioxide (VO₂) with insulator-metal transition (IMT) has excellent application potential in various THz smart devices, but the associated THz modulation properties in the flexible state have rarely been reported. Herein, we deposited an epitaxial VO₂ film on a flexible mica substrate via pulsed-laser deposition and investigated its THz modulation properties under different uniaxial strains across the phase transition. It was observed that the THz modulation depth increases under compressive strain and decreases under tensile strain. Moreover, the phase-transition threshold depends on the uniaxial strain. Particularly, the rate of the phase transition temperature depends on the uniaxial strain and reaches approximately 6 °C/% in the temperature-induced phase transition. The optical trigger threshold in laser-induced phase transition decreased by 38.9% under compressive strain but increased by 36.7% under tensile strain, compared to the initial state without uniaxial strain. These findings demonstrate the uniaxial strain-induced low-power triggered THz modulation and provide new insights for applying phase transition oxide films in THz flexible electronics.

Highly Flexible Ti3C2Tx MXene/Waterborne Polyurethane Membranes for High-Efficiency Terahertz Modulation with Low Insertion Loss

The dynamic control of terahertz (THz) wave transmission on flexible functional materials is a fundamental building block for wearable electronics and sensors in the THz range. However, achieving high-efficiency THz modulation and low insertion loss is a great challenge while maintaining the excellent flexibility and stretchability of the materials. Herein, we report a Ti₃C₂T_x MXene/waterborne polyurethane (WPU) membrane prepared by a vacuum-assisted filtration method, which exhibits excellent THz modulation properties across stretching. The hydrophilic Ti₃C₂T_x MXene and WPU enable the uniform 3D distribution of Ti₃C₂T_x MXene in the WPU matrix. Particularly, the stretchability with the maximum strain of the membranes can reach 200%, accompanied by dynamic tuning of THz transmittance for more than 90% and an insertion loss as low as -4.87 dB. The giant THz modulation continuously decreases with MXene content per unit area, accompanied by a lower density of the MXene interface and diminished THz absorption during stretching. Such a design opens a pathway for achieving flexible THz modulators with a high modulation depth and low insertion loss, which would be used for THz flexible and wearable devices.

Thermal and mechanical THz modulation of flexible all-dielectric metamaterial

The implementation of Terahertz (THz) modulation is critical for applications in high-speed wireless communications, security screening and so on. Therefore, it is particularly significant to obtain THz wave modulation devices with stable and flexible performance, easy manipulation of the modulation method, and multi-functionality. Here, we propose a flexible all-dielectric metamaterial by embedding zirconia (ZrO₂) microspheres into a vanadium dioxide/polydimethylsiloxane (VO₂/PDMS) composite, which can achieve thermal and mechanical tuning of THz wave transmission. When the temperature of the ZrO₂/VO₂/PDMS metamaterial increases, VO₂ changes from the insulating phase to the metallic phase, and the 1^st (at 0.304 THz) and 2^nd (at 0.414 THz) order magnetic resonances exhibit the tunability of 20 GHz and 15 GHz, respectively. When stretched, the 1^st and 2^nd order magnetic resonances show the tunability of 12 GHz and 10 GHz, respectively. In the meantime, there are accompanying changes in transmittance at the resonances. The ZrO₂/VO₂/PDMS all-dielectric metamaterial presented in this work provides an alternative strategy for developing actively tunable, flexible, and versatile THz devices. In addition, it has the merits of simple preparation and low cost, promising large-area and rapid preparation of meta-arrays.

Terahertz modulation characteristics of three nanosols under external field control based on microfluidic chip

Recently, with the widespread application of metamaterials in the terahertz (THz) modulation field, solid-state THz modulators have made breakthrough progress; however, there are still challenges in preparing flexible THz modulators with wide modulation bandwidths. In this study, a THz microfluidic chip was fabricated using cycloolefin copolymers with high transmission (90%) of THz waves. The THz modulation characteristics of TiO₂, Ag, and Fe₃O₄ nanosols under the control of an optical field, electric field, and magnetic field, respectively, were investigated. Under the action of photogenerated carrier migration, colloidal electrophoresis, and magneto-optical effect, all three nanosols exhibit broadband modulation performance in the frequency range of 0.3–2.4 THz, and the maximum modulation depth is 24%, 33%, and 54%, respectively. Contrary to previous studies based on traditional solid-state materials, this study innovatively explores the possibility of modulating THz waves with liquid materials, laying the foundation for the application of flexible liquid-film THz modulators.

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THz broadband amplitude modulation of liquid nanosols under external fields

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Using a microfluidic chip to reduce the absorption of THz waves by hydrogen bonds

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The experimental results lay a foundation for liquid-film THz modulators

Active and Smart Terahertz Electro-Optic Modulator Based on VO2 Structure

Modulating terahertz (THz) waves actively and smartly through an external field is highly desired in the development of THz spectroscopic devices. Here, we demonstrate an active and smart electro-optic THz modulator based on a strongly correlated electron oxide vanadium dioxide (VO2). With milliampere current excitation on the VO2 thin film, the transmission, reflection, absorption, and phase of THz waves can be modulated efficiently. In particular, the antireflection condition can be actively achieved and the modulation depth reaches 99.9%, accompanied by a 180° phase switching. Repeated and current scanning experiments confirm the high stability and multibit modulation of this electro-optic modulation. Most strikingly, by utilizing a feedback loop of "THz-electro-THz" geometry, a smart electro-optic THz control is realized. For instance, the antireflection condition can be stabilized precisely no matter what the initial condition is and how the external environment changes. The proposed electro-optic THz modulation method, taking advantage of strongly correlated electron material, opens up avenues for the realization of THz smart devices.

Optical-Transparent Self-Assembled MXene Film with High-Efficiency Terahertz Reflection Modulation

The modulation of the terahertz (THz) wave is fundamental for its applications in next-generation communications, biological imaging, sensing, and so forth. Searching for higher efficient modulation is still in progress, although plenty of materials have been explored for tuning THz wave. In this work, optical-transparent self-assembled MXene films are used to modulate the THz reflection at the SiO₂/MXene/air interface based on the impedance matching mechanism. By adjusting the number of stacked MXene layers/concentrations of MXene dispersions, the sheet conductivity of the MXene films will be changed so that the impedance at the SiO₂/MXene/air interface can be tuned and lead to a giant modulation of THz reflection. Particularly, we demonstrate that the MXene films have highly efficient THz modulation from antireflection to reflection-enhancing with a relative reflection of 27% and 406%, respectively. This work provides a new pathway for developing the MXene films with the combination of optical-transparency and high smart THz reflection characteristics, and the films can be applied for THz antireflection or reflection-enhancing.

Anodically Induced Chemical Etching of GaAs Wafers for a GaAs Nanowire-Based Flexible Terahertz Wave Emitter

A generic top-down approach for the preparation of extended arrays of high-aspect ratio GaAs nanowires (NWs) with different crystallographic orientations (i.e., [100] or [111]) and morphologies (i.e., porous, nonporous, tapered, or awl-like NWs) is reported. The method is based on the anodically induced chemical etching (AICE) of GaAs wafers in an oxidant-free aqueous HF solution at room temperature by using a patterned metal mesh and allows us to overcome the drawbacks of conventional metal-assisted chemical etching (MACE) processes. Local oxidative dissolution of GaAs in contact with a metal is achieved by externally injecting holes (h⁺) into the valence band (VB) of GaAs through the metal mesh. It is found that injection of holes (h⁺) through direct GaAs contact, rather than the metal mesh, does not yield uniform nanowires but porosify GaAs wafers due to the high cell potential. On the basis of experiments and numerical simulation for the spatial distribution of an electric field, a phenomenological model that explains the formation of GaAs NWs and their porosification behaviors is proposed. GaAs NWs exhibit excellent terahertz (THz) wave emission properties, which vary with either the length or the shape of the nanowires. By taking advantage of controlled porosification and easy transfer of GaAs NWs to foreign substrates, a flexible THz wave emitter is realized.