Precise Arrays of Epitaxial Quantum Dots Nucleated by In Situ Laser Interference for Quantum Information Technology Applications

Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices

Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discussed, with emphasis on the characteristic advantages as well as the limitations of diverse technologies. This will provide guidelines for selecting suitable tools to handle quantum dot colloids throughout the fabrication of quantum dot based solid-state devices. Additionally, epitaxially fabricated single-particle level quantum dot arrays are discussed. These are extreme in terms of pattern resolution, and expand the potential application of quantum dots to quantum information processing.

Laser-assisted local metal-organic vapor phase epitaxy

Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by surface structuring is an effective means for controlling the location of material growth, as well as for improving crystalline properties of epitaxial layers, the commonly involved integral substrate heating presents a limitation, e.g., due to constraints ofr the thermal budget applicable to existing device structures. As a solution, an epitaxial growth approach using a laser source only locally heating the selected growth area, in combination with metal-organic precursors to feed a pyrolithic chemical reaction (also known as metal-organic vapor phase epitaxy, MOVPE), is presented. Without masking or surface structuring, local epitaxial growth of III-V compound semiconductor layers on a 50-1500 µm length-scale, with high structural and optical quality, is demonstrated. We discuss general design rules for reactor chamber, laser heating, temperature measurement, sample manipulation, gas mixing, and distinguish laser-assisted local MOVPE from conventional planar growth for the important compound semiconductor GaAs. Surface de-oxidation prior to growth is mandatory to realize smooth island surfaces. Linear growth rates in the range 0.5-9 µm/h are demonstrated. With increasing island diameter, the probability for plastic deformation within the island increases, depending on reactor pressure. A step-flow mode on the island surface can be achieved by establishing a sufficiently small temperature gradient across the island.

Synthesis, properties and catalysis of quantum dots in C–C and C-heteroatom bond formations

Luminescent quantum dots (QDs) represent a new form of carbon nanomaterials which have gained widespread attention in recent years, especially in the area of chemical sensing, bioimaging, nanomedicine, solar cells, light-emitting diode (LED), and electrocatalysis. Their extremely small size renders some unusual properties such as quantum confinement effects, good surface binding properties, high surface‐to‐volume ratios, broad and intense absorption spectra in the visible region, optical and electronic properties different from those of bulk materials. Apart from, during the past few years, QDs offer new and versatile ways to serve as photocatalysts in organic synthesis. Quantum dots (QD) have band gaps that could be nicely controlled by a number of factors in a complicated way, mentioned in the article. Processing, structure, properties and applications are also reviewed for semiconducting quantum dots. Overall, this review aims to summarize the recent innovative applications of QD or its modified nanohybrid as efficient, robust, photoassisted redox catalysts in C–C and C-heteroatom bond forming reactions. The recent structural modifications of QD or its core structure in the development of new synthetic methodologies are also highlighted. Following a primer on the structure, properties, and bio-functionalization of QDs, herein selected examples of QD as a recoverable sustainable nanocatalyst in various green media are embodied for future reference.

Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference

We demonstrate an effective method for fabricating large area periodic two-dimensional semiconductor nanostructures by means of single-pulse laser interference. Utilizing a pulsed nanosecond laser with a wavelength of 355 nm, precisely ordered square arrays of nanoholes with a periodicity of 300 nm were successfully obtained on UV photoresist and also directly via a resist-free process onto semiconductor wafers. We show improved uniformity using a beam-shaping system consisting of cylindrical lenses with which we can demonstrate highly regular arrays over hundreds of square micrometers. We propose that our novel observation of direct pattern transfer to GaAs is due to local congruent evaporation and subsequent droplet etching of the surface. The results show that single-pulse interference can provide a rapid and highly efficient route for the realization of wide-area periodic nanostructures on semiconductors and potentially on other engineering materials.