Maximizing Solar Water Splitting Performance by Nanoscopic Control of the Charge Carrier Fluxes across Semiconductor–Electrocatalyst Junctions

Metal-insulator-semiconductor photoelectrodes for enhanced photoelectrochemical water splitting

Photoelectrochemical (PEC) water splitting provides a scalable and integrated platform to harness renewable solar energy for green hydrogen production. The practical implementation of PEC systems hinges on addressing three critical challenges: enhancing energy conversion efficiency, ensuring long-term stability, and achieving economic viability. Metal-insulator-semiconductor (MIS) heterojunction photoelectrodes have gained significant attention over the last decade for their ability to efficiently segregate photogenerated carriers and mitigate corrosion-induced semiconductor degradation. This review discusses the structural composition and interfacial intricacies of MIS photoelectrodes tailored for PEC water splitting. The application of MIS heterostructures across various semiconductor light-absorbing layers, including traditional photovoltaic-grade semiconductors, metal oxides, and emerging materials, is presented first. Subsequently, this review elucidates the reaction mechanisms and respective merits of vacuum and non-vacuum deposition techniques in the fabrication of the insulator layers. In the context of the metal layers, this review extends beyond the conventional scope, not only by introducing metal-based cocatalysts, but also by exploring the latest advancements in molecular and single-atom catalysts integrated within MIS photoelectrodes. Furthermore, a systematic summary of carrier transfer mechanisms and interface design principles of MIS photoelectrodes is presented, which are pivotal for optimizing energy band alignment and enhancing solar-to-chemical conversion efficiency within the PEC system. Finally, this review explores innovative derivative configurations of MIS photoelectrodes, including back-illuminated MIS photoelectrodes, inverted MIS photoelectrodes, tandem MIS photoelectrodes, and monolithically integrated wireless MIS photoelectrodes. These novel architectures address the limitations of traditional MIS structures by effectively coupling different functional modules, minimizing optical and ohmic losses, and mitigating recombination losses.

Theory and Simulation of Metal-Insulator-Semiconductor (MIS) Photoelectrodes

A metal-insulator-semiconductor (MIS) structure is an attractive photoelectrode-catalyst architecture for promoting photoelectrochemical reactions, such as the formation of H₂ by proton reduction. The metal catalyzes the generation of H₂ using electrons generated by photon absorption and charge separation in the semiconductor. The insulator layer between the metal and the semiconductor protects the latter element from photo-corrosion and, also, significantly impacts the photovoltage at the metal surface. Understanding how the insulator layer determines the photovoltage and what properties lead to high photovoltages is critical to the development of MIS structures for solar-to-chemical energy conversion. Herein, we present a continuum model for charge-carrier transport from the semiconductor to the metal with an emphasis on mechanisms of charge transport across the insulator. The polarization curves and photovoltages predicted by this model for a Pt/HfO₂/p-Si MIS structure at different HfO₂ thicknesses agree well with experimentally measured data. The simulations reveal how insulator properties (i.e., thickness and band structure) affect band bending near the semiconductor/insulator interface and how tuning them can lead to operation closer to the maximally attainable photovoltage, the flat-band potential. This phenomenon is understood by considering the change in tunneling resistance with insulator properties. The model shows that the best MIS performance is attained with highly symmetric semiconductor/insulator band offsets (e.g., BeO, MgO, SiO₂, HfO₂, or ZrO₂ deposited on Si) and a low to moderate insulator thickness (e.g., between 0.8 and 1.5 nm). Beyond 1.5 nm, the density of filled interfacial trap sites is high and significantly limits the photovoltage and the solar-to-chemical conversion rate. These conclusions are true for photocathodes and photoanodes. This understanding provides critical insight into the phenomena enhancing and limiting photoelectrode performance and how this phenomenon is influenced by insulator properties. The study gives guidance toward the development of next-generation insulators for MIS structures that achieve high performance.

Substantial lifetime enhancement for Si-based photoanodes enabled by amorphous TiO2 coating with improved stoichiometry

Amorphous titanium dioxide (TiO₂) film coating by atomic layer deposition (ALD) is a promising strategy to extend the photoelectrode lifetime to meet the industrial standard for solar fuel generation. To realize this promise, the essential structure-property relationship that dictates the protection lifetime needs to be uncovered. In this work, we reveal that in addition to the imbedded crystalline phase, the presence of residual chlorine (Cl) ligands is detrimental to the silicon (Si) photoanode lifetime. We further demonstrate that post-ALD in-situ water treatment can effectively decouple the ALD reaction completeness from crystallization. The as-processed TiO₂ film has a much lower residual Cl concentration and thus an improved film stoichiometry, while its uniform amorphous phase is well preserved. As a result, the protected Si photoanode exhibits a substantially improved lifetime to ~600 h at a photocurrent density of more than 30 mA/cm². This study demonstrates a significant advancement toward sustainable hydrogen generation.

Metal-Free Triazine-Based 2D Covalent Organic Framework for Efficient H2 Evolution by Electrochemical Water Splitting

Hydrogen evolution reaction (HER) by electrochemical water splitting is one of the most active areas of energy research, yet the benchmark electrocatalysts used for this reaction are based on expensive noble metals. This is a major bottleneck for their large-scale operation. Thus, development of efficient metal-free electrocatalysts is of paramount importance for sustainable and economical production of the renewable fuel hydrogen by water splitting. Covalent organic frameworks (COFs) show much promise for this application by virtue of their architectural stability, nanoporosity, abundant active sites located periodically throughout the framework, and high electronic conductivity due to extended π-delocalization. This study concerns a new COF material, C₆ -TRZ-TFP, which is synthesized by solvothermal polycondensation of 2-hydroxybenzene-1,3,5-tricarbaldehyde (TFP) and 4,4',4''-(1,3,5-triazine-2,4,6-triyl)tris[(1,1'-biphenyl)-4-amine]. C₆ -TRZ-TFP displayed excellent HER activity in electrochemical water splitting, with a very low overpotential of 200 mV and specific activity of 0.2831 mA cm^-2 together with high retention of catalytic activity after a long duration of electrocatalysis in 0.5 m aqueous H₂ SO₄ . Density functional theory calculations suggest that the electron-deficient carbon sites near the π electron-donating nitrogen atoms are more active towards HER than those near the electron-withdrawing nitrogen and oxygen atoms.

Design Principles for Efficient and Stable Water Splitting Photoelectrocatalysts

ConspectusPhotoelectrochemical water splitting is a promising avenue for sustainable production of hydrogen used in the chemical industry and hydrogen fuel cells. The basic components of most photoelectrochemical water splitting systems are semiconductor light absorbers coupled to electrocatalysts, which perform the desired chemical reactions. A critical challenge for the design of these systems is the lack of stability for the majority of desired semiconductors under operating water splitting conditions. One strategy to address this issue is to protect the semiconductor by covering it with a stabilizing insulator layer, creating a metal-insulator-semiconductor (MIS) architecture, which has demonstrated improved stability. In addition to enhanced stability, the insulator layer may significantly affect the electron and hole transfer, which governs the recombination rates. Furthermore, the insertion of an insulator layer leads to the introduction of additional insulator/electrocatalyst and insulator/semiconductor interfaces. These interfaces can impact the system's performance significantly, and they need to be carefully engineered to optimize the efficiencies of MIS systems. In this Account, we describe our recent progress in shedding light on the critical role of the insulator and the interfaces on the performance of MIS systems. We discuss our findings by focusing on the concrete example of planar n-type Si protected by a HfO₂ insulator layer and coupled to a Ni or Ir electrocatalyst that performs the oxygen evolution reaction, one of the water splitting half-reactions. To improve our fundamental understanding of the insulator layer, we precisely control the HfO₂ insulator thickness using atomic layer deposition (ALD), and we perform a series of rigorous electrochemical experiments coupled with theory and modeling. We demonstrate that by tuning the insulator thickness, we can control the flux and recombination of photogenerated electrons and holes to optimize the generated photovoltage. Despite optimizing the thickness, we find that the maximum generated photovoltage in MIS systems is often significantly lower than the upper performance limit, i.e., there are additional losses in the system that could not be addressed by optimizing the insulator thickness. We identify the sources of these losses and describe strategies to minimize them by a combination of improving the semiconductor light absorption, removing nonidealities associated with interfacial defects, and finding alternative insulators with improved charge carrier selectivity. Finally, we quantify the improvements that can be obtained by implementing these specific strategies. Our collective work outlines strategies to analyze MIS systems, identify the sources of efficiency losses, and optimize the design to approach the fundamental performance limits. These general approaches are broadly applicable to photoelectrochemical materials that utilize sunlight to produce value-added chemicals.

Grain Boundaries Boost Oxygen Evolution Reaction in NiFe Electrocatalysts

In a polycrystalline material, the grain boundaries (GBs) can be effective active sites for catalytic reactions by providing an electrodynamically favorable surface. Previous studies have shown that grain boundary density is related to the catalytic activity of the carbon dioxide reduction reaction, but there is still no convincing evidence that the GBs provide surfaces with enhanced activity for oxygen evolution reaction (OER). Combination of various electrochemical measurements and chemical analysis reveals the GB density at surface of NiFe electrocatalysts directly affects the overall OER. In situ electrochemical microscopy vividly shows that the OER occurs mainly at the GB during overall reaction. It is observed that the reaction determining steps are altered by grain boundary densities and the meaningful work function difference between the inside of grain and GBs exists. High-resolution transmission electron microscopy shows that extremely high index planes are exposed at the GBs, enhancing the oxygen evolution activity. The specific nature of GBs and its effects on the OER demonstrated in this study can be applied to the various polycrystalline electrocatalysts.

A high-performance silicon photoanode enabled by oxygen vacancy modulation on NiOOH electrocatalyst for water oxidation

Silicon (Si) is an attractive photoanode material for photoelectrochemical (PEC) water splitting. However, Si photoanode towards the oxygen evolution reaction (OER) is highly challenged due to its poor stability and catalytic inactivity. The integration of highly active electrocatalysts with Si photoanodes has been considered to be an effective strategy to improve their OER performance by accelerating the reaction kinetics and inhibiting Si photocorrosion. In this work, ultra-small NiFe nanoparticles are deposited onto the n-Si/Ni/NiOOH surface to improve the activity and stability of Si photoanodes by engineering the electrocatalyst and Si interface. Ultra-small NiFe nanoparticles can introduce oxygen vacancies via modulating the local electronic structure of Ni hosts in NiOOH electrocatalysts for fast charge separation and transfer. Besides, NiFe nanoparticles can also serve as a co-catalyst exposing more active sites and as a protection layer preventing Si photocorrosion. The as-prepared n-Si/Ni/NiOOH/NiFe photoanode exhibits excellent OER activity with an onset potential of 1.0 V versus reversible hydrogen electrode (RHE) and a photocurrent density of ∼25.2 mA cm^-2 at 1.23 V versus RHE. This work provides a promising approach to design high-performance Si photoanodes by surface electrocatalyst engineering.