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Che C, Tong S, Jia Y, Yang J, He X, Han S, Jiang Q, Ma Y. Chemical doping of unsubstituted perylene diimide to create radical anions with enhanced stability and tunable photothermal conversion efficiency. Front Chem 2023; 11:1187378. [PMID: 37179782 PMCID: PMC10166849 DOI: 10.3389/fchem.2023.1187378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2023] [Accepted: 03/31/2023] [Indexed: 05/15/2023] Open
Abstract
N-doping of perylene diimides (PDIs) to create stable radical anions is significant for harvesting photothermal energy due to their intensive absorption in the near-infrared (NIR) region and non-fluorescence. In this work, a facile and straightforward method has been developed to control the doping of perylene diimide to create radical anions using organic polymer polyethyleneimine (PEI) as a dopant. It was demonstrated that PEI is an effective polymer-reducing agent for the n-doping of PDI toward the controllable generation of radical anions. In addition to the doping process, PEI could suppress the self-assembly aggregation and improve the stability of PDI radical anions. Tunable NIR photothermal conversion efficiency (maximum 47.9%) was also obtained from the radical-anion-rich PDI-PEI composites. This research provides a new strategy to tune the doping level of unsubstituted semiconductor molecules for varying yields of radical anions, suppressing aggregation, improving stability, and obtaining the highest radical anion-based performance.
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Affiliation(s)
- Canyan Che
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Shaohua Tong
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Yanhua Jia
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Jiaji Yang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Xiandong He
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Shaobo Han
- School of Textile Materials and Engineering, Wuyi University, Jiangmen, China
| | - Qinglin Jiang
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
| | - Yuguang Ma
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, China
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Powell D, Zhang X, Nwachukwu CI, Miller EJ, Hansen KR, Flannery L, Ogle J, Berzansky A, Labram JG, Roberts AG, Whittaker-Brooks L. Establishing Self-Dopant Design Principles from Structure-Function Relationships in Self-n-Doped Perylene Diimide Organic Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204656. [PMID: 36040126 DOI: 10.1002/adma.202204656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Revised: 08/17/2022] [Indexed: 06/15/2023]
Abstract
Self-doping is a particular doping method that has been applied to a wide range of organic semiconductors. However, there is a lack of understanding regarding the relationship between dopant structure and function. A structurally diverse series of self-n-doped perylene diimides (PDIs) is investigated to study the impact of steric encumbrance, counterion selection, and dopant/PDI tether distance on functional parameters such as doping, stability, morphology, and charge-carrier mobility. The studies show that self-n-doping is best enabled by the use of sterically encumbered ammoniums with short tethers and Lewis basic counterions. Additionally, water is found to inhibit doping, which concludes that thermal degradation is merely a phenomenological feature of certain dopants, and that residual solvent evaporation is the primary driver of thermally activated doping. In situ grazing-incidence wide-angle X-ray scattering studies show that sample annealing increases the π-π stacking distance and shrinks grain boundaries for improved long-range ordering. These features are then correlated to contactless carrier-mobility measurements with time-resolved microwave conductivity before and after thermal annealing. The collective relationships between structural features and functionality are finally used to establish explicit self-n-dopant design principles for the future design of materials with improved functionality.
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Affiliation(s)
- Daniel Powell
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - Xueqiao Zhang
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, 97331, USA
| | | | - Edwin J Miller
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - Kameron R Hansen
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - Laura Flannery
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - Jonathan Ogle
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - Alex Berzansky
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
| | - John G Labram
- School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR, 97331, USA
| | - Andrew G Roberts
- Department of Chemistry, University of Utah, Salt Lake City, UT, 84112, USA
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Powell D, Whittaker-Brooks L. Concepts and principles of self-n-doping in perylene diimide chromophores for applications in biochemistry, energy harvesting, energy storage, and catalysis. MATERIALS HORIZONS 2022; 9:2026-2052. [PMID: 35670455 DOI: 10.1039/d2mh00279e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-doping is an essential method of increasing carrier concentrations in organic electronics that eliminates the need to tailor host-dopant miscibility, a necessary step when employing molecular dopants. Self-n-doping can be accomplished using amines or ammonium counterions as an electron source, which are being incorporated into an ever-increasingly diverse range of organic materials spanning many applications. Self-n-doped materials have demonstrated exemplary and, in many cases, benchmark performances in a variety of applications. However, an in-depth review of the method is lacking. Perylene diimide (PDI) chromophores are an important mainstay in the semiconductor literature with well-known structure-function characteristics and are also one of the most widely utilized scaffolds for self-n-doping. In this review, we describe the unique properties of self-n-doped PDIs, delineate structure-function relationships, and discuss self-n-doped PDI performance in a range of applications. In particular, the impact of amine/ammonium incorporation into the PDI scaffold on doping efficiency is reviewed with regard to attachment mode, tether distance, counterion selection, and steric encumbrance. Self-n-doped PDIs are a unique set of PDI structural derivatives whose properties are amenable to a broad range of applications such as biochemistry, solar energy conversion, thermoelectric modules, batteries, and photocatalysis. Finally, we discuss challenges and the future outlook of self-n-doping principles.
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Affiliation(s)
- Daniel Powell
- Department of Chemistry, University of Utah, Salt Lake City, Utah, 84112, USA.
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