1
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Ross RD, Lee K, Quintana Cintrón GJ, Xu K, Sheng H, Schmidt JR, Jin S. Stable Pentagonal Layered Palladium Diselenide Enables Rapid Electrosynthesis of Hydrogen Peroxide. J Am Chem Soc 2024; 146:15718-15729. [PMID: 38818811 DOI: 10.1021/jacs.4c00875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
Electrosynthesis of hydrogen peroxide (H2O2) via the two-electron oxygen reduction reaction (2e- ORR) is promising for various practical applications, such as wastewater treatment. However, few electrocatalysts are active and selective for 2e- ORR yet are also resistant to catalyst leaching under realistic operating conditions. Here, a joint experimental and computational study reveals active and stable 2e- ORR catalysis in neutral media over layered PdSe2 with a unique pentagonal puckered ring structure type. Computations predict active and selective 2e- ORR on the basal plane and edge of PdSe2, but with distinct kinetic behaviors. Electrochemical measurements of hydrothermally synthesized PdSe2 nanoplates show a higher 2e- ORR activity than other Pd-Se compounds (Pd4Se and Pd17Se15). PdSe2 on a gas diffusion electrode can rapidly accumulate H2O2 in buffered neutral solution under a high current density. The electrochemical stability of PdSe2 is further confirmed by long device operational stability, elemental analysis of the catalyst and electrolyte, and synchrotron X-ray absorption spectroscopy. This work establishes a new efficient and stable 2e- ORR catalyst at practical current densities and opens catalyst designs utilizing the unique layered pentagonal structure motif.
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Affiliation(s)
- R Dominic Ross
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Kwanpyung Lee
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Gerardo J Quintana Cintrón
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Kaylin Xu
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Hongyuan Sheng
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - J R Schmidt
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
| | - Song Jin
- Department of Chemistry, University of Wisconsin─Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States
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2
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Kumar S, Kumar A, Kumar A, Chakkar AG, Betal A, Kumar P, Sahu S, Kumar M. Catalytic synergy of WS 2-anchored PdSe 2 for highly sensitive hydrogen gas sensor. NANOSCALE 2024. [PMID: 38682669 DOI: 10.1039/d4nr00342j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/01/2024]
Abstract
Hydrogen (H2) is widely used in industrial processes and is one of the well-known choices for storage of renewable energy. H2 detection has become crucial for safety in manufacturing, storage, and transportation due to its strong explosivity. To overcome the issue of explosion, there is a need for highly selective and sensitive H2 sensors that can function at low temperatures. In this research, we have adequately fabricated an unreported van der Waals (vdWs) PdSe2/WS2 heterostructure, which exhibits exceptional properties as a H2 sensor. The formation of these heterostructure devices involves the direct selenization process using chemical vapor deposition (CVD) of Pd films that have been deposited on the substrate of SiO2/Si by DC sputtering, followed by drop casting of WS2 nanoparticles prepared by a hydrothermal method onto device substrates including pre-patterned electrodes. The confirmation of the heterostructure has been done through the utilization of powder X-ray diffraction (XRD), depth-dependent X-ray photoelectron spectroscopy (XPS) and field-emission scanning electron microscopy (FE-SEM) techniques. Also, the average roughness of thin films is decided by Atomic Force Microscopy (AFM). The comprehensive research shows that the PdSe2/WS2 heterostructure-based sensor produces a response that is equivalent to 67.4% towards 50 ppm H2 at 100 °C. The response could be a result of the heterostructure effect and the superior selectivity for H2 gas in contrast to other gases, including NO2, CH4, CO and CO2, suggesting tremendous potential for H2 detection. Significantly, the sensor exhibits fast response and a recovery time of 31.5 s and 136.6 s, respectively. Moreover, the explanation of the improvement in gas sensitivity was suggested by exploiting the energy band positioning of the PdSe2/WS2 heterostructure, along with a detailed study of variations in the surface potential. This study has the potential to provide a road map for the advancement of gas sensors utilizing two-dimensional (2D) vdWs heterostructures, which exhibit superior performance at low temperatures.
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Affiliation(s)
- Suresh Kumar
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Ashok Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Amit Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Atul G Chakkar
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175005, India
| | - Atanu Betal
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Pradeep Kumar
- School of Physical Sciences, Indian Institute of Technology Mandi, Mandi 175005, India
| | - Satyajit Sahu
- Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
| | - Mahesh Kumar
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342030, India.
- Department of Cybernetics, Nanotechnology and Data Processing, Faculty of Automatic Control, Electronics and Computer Science, Silesian University of Technology, Akademicka 16, 44-100 Gliwice, Poland
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3
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Yang J, Xie J, Jiang S, Zhang K, Li Q, Wang Y, Wang T, Su F. Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe 2 Ribbons. J Phys Chem Lett 2024; 15:4276-4285. [PMID: 38607948 DOI: 10.1021/acs.jpclett.4c00765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic and optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved optical pump-probe spectroscopy. In thin PdSe2 ribbons with a semiconductor phase, the photocarrier dynamics are found to be dominated by intraband hot-carrier cooling, interband recombination, and the exciton effect, showing weak crystalline orientation dependences. Conversely, in thick semimetal-phase PdSe2 ribbons, the photocarrier relaxations governed by the electron-optical/acoustic phonon scattering strongly depend on the sample orientation, albeit with a degradation in in-plane anisotropy following hot-carrier cooling. Furthermore, we analyze the correlations between photocarrier dynamics and anisotropic energy dispersions of electronic structures across a wide range in k space, as well as the contributions from the anisotropic electron-phonon couplings. Our study provides crucial insights for developing polarization-sensitive photoelectronic devices based on PdSe2.
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Affiliation(s)
- Jin Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiafeng Xie
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Shaolong Jiang
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Kai Zhang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Qi Li
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Yunfeng Wang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Tianwu Wang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Fuhai Su
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
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4
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Hoat DM, Van On V, Van Huan P, Guerrero-Sanchez J. Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC Adv 2024; 14:7241-7250. [PMID: 38419674 PMCID: PMC10901215 DOI: 10.1039/d3ra08866a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 02/12/2024] [Indexed: 03/02/2024] Open
Abstract
In this work, vacancy- and doping-based magnetism engineering in a non-magnetic 1T-PdO2 monolayer is explored in order to realize new two-dimensional (2D) spintronic materials. The pristine monolayer is an indirect gap semiconductor with a band gap of 1.45 (3.20) eV obtained using the PBE (HSE06) functional. Half-metallicity with a total magnetic moment of 3.95 μB is induced by creating a single Pd vacancy, where the magnetic properties are produced mainly by O atoms around the vacancy site. In contrast, the non-magnetic nature is preserved under the effects of a single O vacancy, however a band gap reduction in the order of 37.93% is achieved. Further doping with transition metals (TMs = V, Cr, Mn, and Fe) in the Pd sublattice and with non-metals (B, C, N, and F) in the O sublattice is investigated. TM impurities lead to the emergence of a diluted magnetic semiconductor nature, where total magnetic moments of 1.00, 2.00, and 3.00 μB are obtained in the V-, Cr(Fe)-, and Mn-doped systems, respectively. In these cases, the TMs' 3d electrons mainly originate the system's magnetism. Significant magnetization of the PdO2 monolayer is also achieved by doping with B, N, and F atoms, where either half-metallic or diluted magnetic semiconductor natures are induced. Herein, electronic and magnetic properties are regulated mainly by the interactions between the 2p orbital of the dopant, 4d orbital of the first neighbor Pd atoms, and 2p orbital of the second neighbor O atoms. Meanwhile, C impurity induces no magnetism in the PdO2 monolayer because of the strong electronic hybridization with their neighbor atoms. Results presented herein may introduce efficient approaches to engineer magnetism in a non-magnetic PdO2 monolayer, such that the functionalized systems are further recommended for prospective spintronic applications.
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Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University Binh Duong Province Vietnam
| | - Phan Van Huan
- Faculty of Basic Science, Binh Duong University, Binh Duong Province Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
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5
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Awasthi C, Khan A, Islam SS. PdSe 2/MoSe 2: a promising van der Waals heterostructure for field effect transistor application. NANOTECHNOLOGY 2024; 35:195202. [PMID: 38295411 DOI: 10.1088/1361-6528/ad2482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2023] [Accepted: 01/31/2024] [Indexed: 02/02/2024]
Abstract
The field-effect transistor (FET) is a fundamental component of semiconductors and the electronic industry. High on-current and mobility with layer-dependent features are required for outstanding FET channel material. Two-dimensional materials are advantageous over bulk materials owing to their higher mobility, high ON/OFF ratio, low tunneling current, and leakage problems. Moreover, two-dimensional heterostructures provide a better way to tune electrical properties. In this work, the two distinct possibilities of PdSe2/MoSe2heterostructure have been employed through mechanical exfoliation and analyzed their electrical response. These diffe approaches to heterostructure formation serve as crucial components of our investigation, allowing us to explore and evaluate the unique electronic properties arising from each design. This work demonstrates that the heterostructure possesses a better ON/OFF ratio of ∼5.78 × 105, essential in switching characteristics. Moreover, MoSe2provides a defect-free interface to PdSe2, resulting in a higher ON current of ∼10μA and mobility of ∼63.7 cm2V-1s-1, necessary for transistor applications. In addition, comprehending the process of charge transfer occurring at the interface between transition metal dichalcogenides is fundamental for advancing next-generation technologies. This work provides insights into the interface formed between the PdSe2and MoSe2that can be harnessed in transistor applications.
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Affiliation(s)
- Chetan Awasthi
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
| | - Afzal Khan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou-310027, People's Republic of China
- Institute of Micro-/Nanotechnology and Precision Engineering, School of Mechanical Engineering, Zhejiang University, Hangzhou-310058, People's Republic of China
| | - S S Islam
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
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6
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Zhang Y, Tian H, Li H, Yoon C, Nelson RA, Li Z, Watanabe K, Taniguchi T, Smirnov D, Kawakami RK, Goldberger JE, Zhang F, Lau CN. Quantum octets in high mobility pentagonal two-dimensional PdSe 2. Nat Commun 2024; 15:761. [PMID: 38278796 PMCID: PMC10817936 DOI: 10.1038/s41467-024-44972-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/11/2024] [Indexed: 01/28/2024] Open
Abstract
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
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Affiliation(s)
- Yuxin Zhang
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Haidong Tian
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Huaixuan Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Ryan A Nelson
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Ziling Li
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Roland K Kawakami
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
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7
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Jiang J, Xu W, Sun Z, Fu L, Zhang S, Qin B, Fan T, Li G, Chen S, Yang S, Ge W, Shen B, Tang N. Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe 2 for Artificial Synaptic Features. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306068. [PMID: 37963834 DOI: 10.1002/smll.202306068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 10/23/2023] [Indexed: 11/16/2023]
Abstract
Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two-terminal synaptic device based on a doped PdSe2 flake is proposed to imitate the key neural functions in an optical pathway. Due to the wavelength-dependent desorption of oxygen clusters near the intrinsic selenide vacancy defects, the doped PdSe2 photodetector achieves a high negative photoresponsivity of -7.8 × 103 A W-1 at 473 nm and a positive photoresponsivity of 181 A W-1 at 1064 nm. This wavelength-selective bi-direction photoresponse endows an all-optical pathway to imitate the fundamental functions of artificial synapses on a device level, such as psychological learning and forgetting capability, as well as dynamic logic functions. The underpinning photoresponse is further demonstrated on a flexible platform, providing a viable technology for neuromorphic computing in wearable electronics. Furthermore, the p-type doping results in an effective increase of the channel's electrical conductivity and a significant reduction in power consumption. Such low-power-consuming optical synapses with simple device architecture and low-dimensional features demonstrate tremendous promise for building multifunctional artificial neuromorphic systems in the future.
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Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhenhao Sun
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shixiong Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Teng Fan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Guoping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shuaiyu Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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8
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Jiang J, Xu W, Guo F, Yang S, Ge W, Shen B, Tang N. Polarization-Resolved Near-Infrared PdSe 2 p-i-n Homojunction Photodetector. NANO LETTERS 2023; 23:9522-9528. [PMID: 37823381 DOI: 10.1021/acs.nanolett.3c03086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Constructing high-quality homojunctions plays a pivotal role for the advancement of two-dimensional transition metal sulfide (TMDC) based optoelectronic devices. Here, a lateral PdSe2 p-i-n homojunction is constructed by electrostatic doping. Electrical measurements reveal that the homojunction diode exhibits a strong rectifying characteristic with a rectification ratio exceeding 104 and an ideality factor approaching 1. When functioning in photovoltaic mode, the device achieves a high responsivity of 1.1 A/W under 1064 nm illumination, with a specific detectivity of 1.3 × 1011 Jones and a high linearity of 45 dB. Benefiting from the lateral p-i-n structure, the junction capacitance is significantly reduced, and an ultrafast response (3/6 μs) is obtained. Additionally, the photodiode has the capability of polarization distinction due to the unique in-plane anisotropic structure of PdSe2, exhibiting a dichroic ratio of 1.6 at a 1064 nm wavelength. This high-performance polarization-sensitive near-infrared photodetector exhibits great potential in the next-generation optoelectronic applications.
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Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Fuqiang Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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9
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Li G, Zhang X, Wang Y, Bai Z, Zhao H, He J, He D. Ultrafast transient absorption measurements of photocarrier dynamics in PdSe 2. NANOSCALE 2023; 15:14994-14999. [PMID: 37664909 DOI: 10.1039/d3nr03173j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
We investigate the photocarrier dynamics in bulk PdSe2, a layered transition metal dichalcogenide with a novel pentagonal structure and unique electronic and optical properties. Using femtosecond transient absorption microscopy, we study the behavior of photocarriers in mechanically exfoliated bulk PdSe2 flakes at room temperature. By employing a 400 nm ultrafast laser pulse, electron-hole pairs are generated, and their dynamics are probed using an 800 nm detection pulse. Our findings reveal that the lifetime of photocarriers in bulk PdSe2 is approximately 210 ps. Furthermore, by spatially resolving the differential reflection signal, we determine a photocarrier diffusion coefficient of about 7.3 cm2 s-1. Based on these results, we estimate a diffusion length of around 400 nm and a photocarrier mobility of approximately 300 cm2 V-1 s-1. These results shed light on the ultrafast optoelectronic properties of PdSe2, offer valuable insights into photocarriers in this emerging material, and enable design of high-performance optoelectronic devices based on PdSe2.
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Affiliation(s)
- Guili Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Zhiying Bai
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, USA.
| | - Jiaqi He
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
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10
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Nelson RA, Deng Z, Ochs AM, Koster KG, Irvine CT, Heremans JP, Windl W, Goldberger JE. Axis dependent conduction polarity in the air-stable semiconductor, PdSe 2. MATERIALS HORIZONS 2023; 10:3740-3748. [PMID: 37404019 DOI: 10.1039/d3mh00537b] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
Axis-dependent conduction polarity (ADCP) is a unique electronic phenomena in which the charge polarity of carrier conduction can differ from p-type to n-type depending on the direction of travel through the crystal. Most materials that exhibit ADCP are metals, and very few semiconducting materials exhibit this effect. Here, we establish that PdSe2, a ∼0.5 eV band gap semiconductor that is air- and water-stable, exhibits ADCP, through the growth and characterization of the transport properties of crystals with extrinsic p- and n-type doping levels of Ir and Sb, respectively, in the 1016-1018 cm-3 range. Electron doped PdSe2 exhibits p-type conduction in the cross-plane direction and n-type conduction along the in-plane directions above an onset temperature of 100-200 K that varies with doping level. Lightly p-doped samples show p-type thermopower in all directions at low temperatures, but above ∼360 K the in-plane thermopower turns negative. Density functional theory calculations indicate that the origin of ADCP arises from the complementary effective mass anisotropies in the valence and conduction bands in this material, which facilitate hole transport in the cross-plane direction, and electron transport along the in-plane directions. ADCP occurs at temperatures with sufficient thermal population of both carrier types to overcome the extrinsic doping levels to exploit the effective mass anisotropy. In total, the development of this stable semiconductor in which thermally or optically excited holes and electrons inherently migrate along different directions opens up numerous potential applications in a multitude of technologies.
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Affiliation(s)
- Ryan A Nelson
- Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA.
| | - Ziling Deng
- Dept of Materials Science and Engineering, Fontana Laboratories Suite 2136, 140 W. 19th Ave., Columbus, OH 43210, USA
| | - Andrew M Ochs
- Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA.
| | - Karl G Koster
- Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA.
| | - Cullen T Irvine
- Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA.
| | - Joseph P Heremans
- Dept of Mechanical and Aerospace Engineering, The Ohio State University, 201 W. 19th Ave., Columbus, OH 43210, USA
- Dept of Physics, The Ohio State University, 191 W. Woodruff Ave., Columbus, OH 43210, USA
| | - Wolfgang Windl
- Dept of Materials Science and Engineering, Fontana Laboratories Suite 2136, 140 W. 19th Ave., Columbus, OH 43210, USA
| | - Joshua E Goldberger
- Dept of Chemistry and Biochemistry, The Ohio State University, 100 W. 18th Ave., Columbus, OH 43210, USA.
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11
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Xiao F, Lei W, Wang W, Ma Y, Gong X, Ming X. Layer-dependent electronic structures and optical properties of two-dimensional PdSSe. Phys Chem Chem Phys 2023; 25:11827-11838. [PMID: 37067819 DOI: 10.1039/d3cp00022b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/18/2023]
Abstract
Two-dimensional (2D) layered palladium dichalcogenides PdX2 (X = S and Se) have attracted increasing interest due to their tunable electronic structure and abundant physicochemical properties. Recently, as the sister material of PdX2, PdSSe has received increasing attention and shows great promise for technological applications and fundamental research. In the present study, we focus on the layer-dependent geometry, electronic structure, and optical properties of PdSSe using first-principles calculations. The lattice shrinkage effect present in the 2D structure is suppressed with increasing number of layers. Attributed to the strong interlayer coupling interactions, the band gap decreases from 2.30 to 0.83 eV with increased thickness. Particularly, the dispersion of the band edges on the high symmetry path changes considerably from the monolayer to bilayer PdSSe, resulting in shifts of the conduction band minimum and valence band maximum. The multilayer PdSSe shows band convergence feature with multi-valley for the conduction band, which are maintained with reduced effective mass. Furthermore, the increasing number of layers drives a wider absorption range in the visible light region, and the light absorption capability increases from ∼10% to ∼30%. Meanwhile, the band edge positions of the multilayer PdSSe are more appropriate for photocatalytic water splitting. Our theoretical study reveals the enhanced valley convergence, conductivity and optical absorption performance of the few-layer PdSSe, which suggests its promising application in thermoelectric conversion, solar harvesting and photocatalysis.
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Affiliation(s)
- Feng Xiao
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Yiping Ma
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xujia Gong
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xing Ming
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- MOE Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Key Laboratory of Low-dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
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12
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Lee M, Kim TW, Park CY, Lee K, Taniguchi T, Watanabe K, Kim MG, Hwang DK, Lee YT. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications. NANO-MICRO LETTERS 2022; 15:22. [PMID: 36580180 PMCID: PMC9800667 DOI: 10.1007/s40820-022-01001-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/11/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
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Affiliation(s)
- Minjong Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Tae Wook Kim
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Chang Yong Park
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Min-Gu Kim
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Information and Communication Engineering, Inha University, Incheon, 22212, Republic of Korea.
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
| | - Young Tack Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Electronic Engineering, Inha University, Incheon, 22212, Republic of Korea.
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13
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Wang Z, Ali N, Ali F, Choi H, Shin H, Yoo WJ. Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe 2 Semiconductor Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55787-55794. [PMID: 36474350 DOI: 10.1021/acsami.2c17821] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.
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Affiliation(s)
- Zhenping Wang
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Nasir Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Fida Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hyungyu Choi
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hoseong Shin
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Won Jong Yoo
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
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14
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Luo W, Oyedele AD, Mao N, Puretzky A, Xiao K, Liang L, Ling X. Excitation-Dependent Anisotropic Raman Response of Atomically Thin Pentagonal PdSe 2. ACS PHYSICAL CHEMISTRY AU 2022; 2:482-489. [PMID: 36465836 PMCID: PMC9706783 DOI: 10.1021/acsphyschemau.2c00007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 07/15/2022] [Accepted: 07/22/2022] [Indexed: 06/17/2023]
Abstract
The group-10 noble-metal dichalcogenides have recently emerged as a promising group of two-dimensional materials due to their unique crystal structures and fascinating physical properties. In this work, the resonance enhancement of the interlayer breathing mode (B1) and intralayer Ag 1 and Ag 3 modes in atomically thin pentagonal PdSe2 were studied using angle-resolved polarized Raman spectroscopy with 13 excitation wavelengths. Under the excitation energies of 2.33, 2.38, and 2.41 eV, the Raman intensities of both the low-frequency breathing mode B1 and high-frequency mode Ag 1 of all the thicknesses are the strongest when the incident polarization is parallel to the a axis of PdSe2, serving as a fast identification of the crystal orientation of few-layer PdSe2. We demonstrated that the intensities of B1, Ag 1, and Ag 3 modes are the strongest with the excitation energies between 2.18 and 2.38 eV when the incident polarization is parallel to PdSe2 a axis, which arises from the resonance enhancement caused by the absorption. Our investigation reveals the underlying interplay of the anisotropic electron-phonon and electron-photon interactions in the Raman scattering process of atomically thin PdSe2. It paves the way for future applications on PdSe2-based optoelectronics.
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Affiliation(s)
- Weijun Luo
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Akinola D. Oyedele
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
- Bredesen
Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Nannan Mao
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Alexander Puretzky
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xi Ling
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Division
of Materials Science and Engineering, Boston
University, Boston, Massachusetts 02215, United States
- The Photonics
Center, Boston University, Boston, Massachusetts 02215, United States
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15
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Li G, Chen Z, Zhang H, Yu M, Zhang H, Chen J, Wang Z, Yin S, Lin W, Gong P, Zeng L, Zhu X, Wei W, Tian M, Li L. Abnormal linear dichroism transition in two-dimensional PdPS. NANOSCALE 2022; 14:14129-14134. [PMID: 36111459 DOI: 10.1039/d2nr03587a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The linear dichroism (LD) conversion shows promising applications for polarized detectors, optical transition and light propagation. However, polarity reversal always occurs at a certain wavelength in LD materials, which can only distinguish two wavelength bands as wavelength-selective photodetectors. In this study, the multi-degree-of-freedom of optical anisotropy based on 2D PdPS flakes is carefully described, in which four critical switching wavelengths are observed. Remarkably, the quadruple LD conversion shows a significant wavelength-dependent behavior, allowing us to pinpoint five wavelength bands, 200-239 nm, 239-259 nm, 259-469 nm, 469-546 nm, and 546-700 nm, for a wavelength-selective approach to photodetectors. In addition, the polarized photoresponse under 532 nm was realized with an anisotropy factor of ∼1.51 and further illustrated the in-plane anisotropy. Raman spectroscopy of PdPS flakes also shows strong phonon anisotropy. The unique wavelength-selective property shows great potential for the miniaturization and integration of photodetectors.
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Affiliation(s)
- Gang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Zheng Chen
- High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, P. R. China.
| | - Hanlin Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Mengxi Yu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hui Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawnag Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Zihan Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Weichang Lin
- Applied Physics and Applied Mathematics Department, Fu Foundation School of Engineering and Applied Science, Columbia University, New York, NY 10027, USA
| | - Penglai Gong
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding 071002, China.
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Xiangde Zhu
- High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, P. R. China.
| | - Wensen Wei
- High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, P. R. China.
| | - Mingliang Tian
- High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, P. R. China.
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
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16
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Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, Rack PD, Rouleau CM, Meng X, Yoon M, Geohegan DB, Xiao K. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe 2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS NANO 2022; 16:13900-13910. [PMID: 35775975 DOI: 10.1021/acsnano.2c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe2 is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe2. Monoclinic PdSe2 is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe2 crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe2 flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe2 exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm2 V-1 s-1 and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
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Affiliation(s)
- Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Anna Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Austin Houston
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiangmin Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mina Yoon
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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17
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Xu S, Wang Y, Li Y. Pentagonal PdX2 (X = S, Se) nanosheets with X vacancies as high-performance electrocatalysts for the hydrogen evolution reaction. Phys Chem Chem Phys 2022; 24:9930-9935. [DOI: 10.1039/d2cp00393g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising catalysts for the hydrogen evolution reaction (HER). However, they typically require the engineering of additional actives sites (e.g. vacancies and dopants)...
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18
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Bravo S, Pacheco M, Correa JD, Chico L. Topological bands in PdSe 2 pentagonal monolayer. Phys Chem Chem Phys 2022; 24:15749-15755. [DOI: 10.1039/d2cp01822e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structure of monolayer pentagonal palladium diselenide (PdSe2) is analyzed from the topological band theory perspective. Employing first-principles calculations, effective models and symmetry indicators we find that the low-lying...
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19
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Fu C, Xiao YT, Xing Y, Tong XW, Wang J, Zhang ZX, Wang L, Wu D, Luo LB. Filterless Discrimination of Wavelengths in the Range from Ultraviolet to Near-Infrared Light Using Two PdSe 2/Thin Si/PdSe 2 Heterojunction Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43273-43281. [PMID: 34469096 DOI: 10.1021/acsami.1c12885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we present a wavelength sensor that is capable of distinguishing the spectrum in the range from ultraviolet (UV) to near-infrared (NIR) light. The filterless device is composed of two horizontally stacking PdSe2/20 μm Si/PdSe2 heterojunction photodetectors with a photovoltaic (PV) behavior, which makes it possible for the device to work at 0 bias voltage. Due to the relatively small thickness of Si and the wavelength-dependent absorption coefficient, the two PdSe2/20 μm Si/PdSe2 photodetectors according to theoretical simulation display a sharp contrast in distribution of the photoabsorption rate. As a result, the photocurrents of both photodetectors evolve in completely different ways with increasing wavelengths, leading to a monotonic decrease in the photocurrent ratio from 6800 to 22 when the wavelength gradually increases from 265 to 1050 nm. The corresponding relationship between both the photocurrent ratio and wavelength can be easily described by the monotonic function, which can help to precisely determine the wavelength in the range from 265 to 1050 nm, with an average relative error less than ±1.6%. It is also revealed that by slightly revising the monotonic function, the wavelength in other different temperatures can also be estimated.
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Affiliation(s)
- Can Fu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Yu-Tian Xiao
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Yue Xing
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Xiao-Wei Tong
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Jiang Wang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Zhi-Xiang Zhang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Li Wang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
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20
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Wang Y, Ren J. Strain-Driven Switchable Thermal Conductivity in Ferroelastic PdSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:34724-34731. [PMID: 34266241 DOI: 10.1021/acsami.1c07830] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Materials with either high or low lattice thermal conductivity are remarkable for thermal management with applying in high-power electronic, optoelectronic, and thermoelectric devices. The realization of thermal switch between high and low thermal conductivities can greatly promote the ability of thermal energy control. Here, based on first-principles calculations, we propose that ferroelastic PdSe2 can achieve continuous switchable thermal conductivity through strain-driven structural phase transition. Thermal switch we explored mainly stems from soft mechanical properties and strong anharmonicity of the structure after ferroelastic phase transition. We demonstrate that the maximum ratio of thermal switch can reach an order of magnitude, indicating PdSe2 as a promising candidate in thermal devices.
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Affiliation(s)
- Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai 200092, China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai 200092, China
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21
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Fang Y, Wang F, Wang R, Zhai T, Huang F. 2D NbOI 2 : A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101505. [PMID: 34096119 DOI: 10.1002/adma.202101505] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2021] [Revised: 04/05/2021] [Indexed: 06/12/2023]
Abstract
Exploring in-plane anisotropic 2D materials is of great significance to the fundamental studies and further development of polarizationsensitive optoelectronics. Herein, chiral niobium oxide diiodide (NbOI2 ) is introduced into the intriguing anisotropic 2D family with the experimental demonstration of anisotropic optical and electrical properties. 2D NbOI2 crystals exhibit highly anisotropic dispersed band structures around the Fermi surface and strong in-plane anisotropy of phonon vibrations owing to the different bonding modes of Nb atoms along the b- and c-axes. Consequently, the anisotropic factors of optical absorbance and photoresponsivity in 2D NbOI2 crystals reach up to 1.75 and 1.7, respectively. These anisotropic properties make 2D NbOI2 an interesting platform for novel polarization-sensitive optoelectronic applications.
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Affiliation(s)
- Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ruiqi Wang
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
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Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
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Yang H, Xiao Y, Zhang K, Chen Z, Pan J, Zhuo L, Zhong Y, Zheng H, Zhu W, Yu J, Chen Z. Self-powered and high-performance all-fiber integrated photodetector based on graphene/palladium diselenide heterostructures. OPTICS EXPRESS 2021; 29:15631-15640. [PMID: 33985260 DOI: 10.1364/oe.425777] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Accepted: 04/25/2021] [Indexed: 06/12/2023]
Abstract
An all-fiber integrated photodetector is proposed and demonstrated by assembling a graphene/palladium diselenide (PdSe2) Van der Waals heterostructure onto the endface of a standard optical fiber. A gold film is covered on the heterostructure working as an electrode and a mirror, which reflects back the unabsorbed residual light for further reusage. Owing to the low bandgap of PdSe2, the all-fiber photodetector shows a broadband photoresponse from 650 to 1550 nm with a high photoresponsivity of 6.68×104 AW-1, enabling a low light detection of 42.5 pW. And the fastest temporal response is about 660 µs. Taking advantage of heterostructures, the photodetector can work in self-powered mode with the on/off ratio about 82. These findings provide new strategies for integrating two-dimensional materials into optical fibers to realize integrated all-fiber devices with multi-function applications.
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Tai KL, Chen J, Wen Y, Park H, Zhang Q, Lu Y, Chang RJ, Tang P, Allen CS, Wu WW, Warner JH. Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors. ACS NANO 2020; 14:11677-11690. [PMID: 32809801 DOI: 10.1021/acsnano.0c04230] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Two-dimensional (2D) materials and van der Waals heterostructures with atomic-scale thickness provide enormous potential for advanced science and technology. However, insufficient knowledge of compatible synthesis impedes wafer-scale production. PdSe2 and Pd2Se3 are two of the noble transition-metal chalcogenides with excellent physical properties that have recently emerged as promising materials for electronics, optoelectronics, catalyst, and sensors. This research presents a feasible approach to synthesize PdSe2 and Pd2Se3 with inherently asymmetric structure on honeycomb lattice 2D monolayer substrates of graphene and MoS2. We directly deposit a molecular transition-metal precursor complex on the surface of the 2D substrates, followed by low-temperature selenization by chemical vapor flow. Parameter control leads to tuning of the material from monolayer nanocrystals with Pd2Se3 phase, to continuous few-layer PdSe2 films. Annular dark-field scanning transmission electron microscopy (ADF-STEM) reveals the structure, phase variations, and heteroepitaxy at the atomic level. PdSe2 with unconventional interlayer stacking shifts appeared as the kinetic product, whereas the bilayer PdSe2 and monolayer Pd2Se3 are the thermodynamic product. The epitaxial alignment of interlayer rotation and translation between the PdSe2 and underlying 2D substrate was also revealed by ADF-STEM. These results offer both nanoscale and atomic-level insights into direct growth of van der Waals heterostructures, as well as an innovative method for 2D synthesis by predetermined nucleation.
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Affiliation(s)
- Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
| | - Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Hyoju Park
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Qianyang Zhang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Peng Tang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Christopher S Allen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Electron Physical Sciences Imaging Center, Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
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