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Fragkos S, Symeonidou E, Lasserre E, Fabre B, Descamps D, Petit S, Tsipas P, Mairesse Y, Dimoulas A, Beaulieu S. Excited State Band Mapping and Ultrafast Nonequilibrium Dynamics in Topological Dirac Semimetal 1T-ZrTe 2. NANO LETTERS 2024; 24:13397-13404. [PMID: 39383126 PMCID: PMC11505392 DOI: 10.1021/acs.nanolett.4c04019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2024] [Revised: 10/04/2024] [Accepted: 10/04/2024] [Indexed: 10/11/2024]
Abstract
We performed time- and polarization-resolved extreme ultraviolet momentum microscopy on the topological Dirac semimetal candidate 1T-ZrTe2. Excited state band mapping uncovers the previously inaccessible linear dispersion of the Dirac cone above the Fermi level. We study the orbital texture of bands using linear dichroism in photoelectron angular distributions. These observations provide hints about the topological character of 1T-ZrTe2. Time-, energy-, and momentum-resolved nonequilibrium carrier dynamics reveal that intra- and interband scattering processes play a major role in the relaxation mechanism, leading to multivalley electron-hole accumulation near the Fermi level. We also show that electrons' inverse lifetime has a linear dependence as a function of their excess energy. Our time- and polarization-resolved XUV photoemission results shed light on the excited state electronic structure of 1T-ZrTe2 and provide valuable insights into the relatively unexplored field of quantum-state-resolved ultrafast dynamics in 3D topological Dirac semimetals.
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Affiliation(s)
- Sotirios Fragkos
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Evgenia Symeonidou
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, 15310 Athens, Greece
- School
of Chemistry, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece
| | - Emile Lasserre
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Baptiste Fabre
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Dominique Descamps
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Stéphane Petit
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Polychronis Tsipas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, 15310 Athens, Greece
| | - Yann Mairesse
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
| | - Athanasios Dimoulas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, 15310 Athens, Greece
| | - Samuel Beaulieu
- Université
de Bordeaux - CNRS - CEA, CELIA, UMR5107, F33405 Talence, France
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2
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Zhang H, Wu Y, Huang Z, Shen X, Li B, Zhang Z, Wu R, Wang D, Yi C, He K, Zhou Y, Liu J, Li B, Duan X. Synthesis of Two-Dimensional MoO 2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect. NANO LETTERS 2023; 23:2179-2186. [PMID: 36862981 DOI: 10.1021/acs.nanolett.2c04721] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very interesting owing to their potential application in magnetic storage or sensor devices. Here, we report the synthesis of 2D MoO2 nanoplates grown by a chemical vapor deposition (CVD) method and observe large LMR and nonlinear Hall behavior in MoO2 nanoplates. As-obtained MoO2 nanoplates exhibit rhombic shapes and high crystallinity. Electrical studies indicate that MoO2 nanoplates feature a metallic nature with an excellent conductivity of up to 3.7 × 107 S m-1 at 2.5 K. MoO2 nanoplates display a large LMR of up to 455% at 3 K and -9 T. A thickness-dependent LMR analysis suggests that LMR values increase upon increasing the thickness of nanoplates. Besides, nonlinearity has been found in the magnetic-field-dependent Hall resistance, which decreases with increasing temperatures. Our studies highlight that MoO2 nanoplates are promising materials for fundamental studies and potential applications in magnetic storage devices.
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Affiliation(s)
- Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Yangwu Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Ruixia Wu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Chen Yi
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Kun He
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Yucheng Zhou
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Bo Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, People's Republic of China
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3
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Correa L, Ferreira PP, de Faria LR, Fim VM, da Luz MS, Torikachvili MS, Heil C, Eleno LTF, Machado AJS. Superconductivity in Te-Deficient ZrTe 2. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:5162-5168. [PMID: 36960103 PMCID: PMC10026068 DOI: 10.1021/acs.jpcc.2c08836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/17/2022] [Revised: 02/27/2023] [Indexed: 06/18/2023]
Abstract
We present structural, electrical, and thermoelectric potential measurements on high-quality single crystals of ZrTe1.8 grown from isothermal chemical vapor transport. These measurements show that the Te-deficient ZrTe1.8, which forms the same structure as the nonsuperconducting ZrTe2, is superconducting below 3.2 K. The temperature dependence of the upper critical field (H c2) deviates from the behavior expected in conventional single-band superconductors, being best described by an electron-phonon two-gap superconducting model with strong intraband coupling. For the ZrTe1.8 single crystals, the Seebeck potential measurements suggest that the charge carriers are predominantly negative, in agreement with the ab initio calculations. Through first-principles calculations within DFT, we show that the slight reduction of Te occupancy in ZrTe2 unexpectedly gives origin to density of states peaks at the Fermi level due to the formation of localized Zr-d bands, possibly promoting electronic instabilities at the Fermi level and an increase at the critical temperature according to the standard BCS theory. These findings highlight that the Te deficiency promotes the electronic conditions for the stability of the superconducting ground state, suggesting that defects can fine-tune the electronic structure to support superconductivity.
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Affiliation(s)
- Lucas
E. Correa
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
| | - Pedro P. Ferreira
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
- Institute
of Theoretical and Computational Physics, Graz University of Technology, NAWI Graz, 8010 Graz, Austria
| | - Leandro R. de Faria
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
| | - Vitor M. Fim
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
| | - Mario S. da Luz
- Instituto
de Ciências Tecnológicas e Exatas, Universidade Federal do Triângulo Mineiro, 38025-180 Uberaba, Minas Gerais, Brazil
| | - Milton S. Torikachvili
- Department
of Physics, San Diego State University, San Diego, California 92182-1233, United States
| | - Christoph Heil
- Institute
of Theoretical and Computational Physics, Graz University of Technology, NAWI Graz, 8010 Graz, Austria
| | - Luiz T. F. Eleno
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
| | - Antonio J. S. Machado
- Universidade
de São Paulo, Escola de Engenharia
de Lorena, DEMAR, 12612-550 Lorena, Brazil
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5
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Li W, Zeng Y, Zhao Z, Zhang B, Xu J, Huang X, Hou Y. 2D Magnetic Heterostructures and Their Interface Modulated Magnetism. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50591-50601. [PMID: 34674524 DOI: 10.1021/acsami.1c11132] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.
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Affiliation(s)
- Wei Li
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yi Zeng
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zijing Zhao
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Biao Zhang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Junjie Xu
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxiao Huang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yanglong Hou
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
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6
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Lee WY, Kang MS, Kim GS, Park NW, Choi KY, Le CT, Rashid MU, Saitoh E, Kim YS, Lee SK. Role of Ferromagnetic Monolayer WSe 2 Flakes in the Pt/Y 3Fe 5O 12 Bilayer Structure in the Longitudinal Spin Seebeck Effect. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15783-15790. [PMID: 33769783 DOI: 10.1021/acsami.0c22345] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
The spin Seebeck effect (SSE) has attracted renewed interest as a promising phenomenon for energy harvesting systems. A noteworthy effort has been devoted to improving the SSE voltage by inserting ultrathin magnetic layers including Fe70Cu30 interlayers in Pt/Y3Fe5O12 (Pt/YIG) systems with increased spin-mixing conductance at the interfaces. Nevertheless, the responsible underlying physics associated with the role of the interlayer in Pt/YIG systems in the SSE is still unknown. In this paper, we demonstrate that with a monolayer tungsten diselenide (ML WSe2) interlayer in the Pt/YIG bilayer system, the longitudinal SSE (LSSE) voltage is significantly increased by the increased spin accumulation in the Pt layer; the spin fluctuation in ML WSe2 amplifies the spin current transmission because the in-plane-aligned WSe2 spins are coupled to thermally pumped spins under nonequilibrium magnetization conditions in the LSSE configuration at room temperature. The thermopower (VLSSE/ΔT) improves by 323% with respect to the value of the reference Pt/YIG bilayer sample in the LSSE at room temperature. In addition, the induced ferromagnetic properties of the ML WSe2 flakes on YIG increase the LSSE voltage (VLSSE) of the sample; the ferromagnetic properties are a result of the improved magnetic moment density in the ML WSe2 flakes and their two-dimensional (2D) ML nature in the LSSE under nonequilibrium magnetization conditions. The results can extend the application range of the materials in energy harvesting and provide important information on the physics of the LSSE with a transition metal dichalcogenide intermediate layer in spin transport.
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Affiliation(s)
- Won-Yong Lee
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Min-Sung Kang
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Gil-Sung Kim
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - No-Won Park
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Kwang-Yong Choi
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Chinh Tam Le
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Mamoon Ur Rashid
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Eiji Saitoh
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yong Soo Kim
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Sang-Kwon Lee
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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