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Enomoto K, Miranti R, Liu J, Okano R, Inoue D, Kim D, Pu YJ. Anisotropic electronic coupling in three-dimensional assembly of CsPbBr 3 quantum dots. Chem Sci 2024; 15:13049-13057. [PMID: 39148765 PMCID: PMC11323341 DOI: 10.1039/d4sc01769b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2024] [Accepted: 07/13/2024] [Indexed: 08/17/2024] Open
Abstract
Cesium lead halide (CsPbX3, X = Cl, Br, or I) perovskite quantum dots (PeQDs) show promise for next-generation optoelectronics. In this study, we controlled the electronic coupling between PeQD multilayers using a layer-by-layer method and dithiol linkers of varying structures. The energy shift of the first excitonic peak from monolayer to bilayer decreases exponentially with increasing interlayer spacer distance, indicating the resonant tunnelling effect. X-ray diffraction measurements revealed anisotropic inter-PeQD distances in multiple layers. Photoluminescence (PL) analysis showed lower energy emission in the in-plane direction due to the electronic coupling in the out-of-plane direction, supporting the anisotropic electronic state in the PeQD multilayers. Temperature-dependent PL and PL lifetimes indicated changes in exciton behaviour due to the delocalized electronic state in PeQD multilayers. Particularly, the electron-phonon coupling strength increased, and the exciton recombination rate decreased. This is the first study demonstrating controlled electronic coupling in a three-dimensional ordered structure, emphasizing the importance of the anisotropic electronic state for high-performance PeQDs devices.
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Affiliation(s)
- Kazushi Enomoto
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Retno Miranti
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Jianjun Liu
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Rinkei Okano
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - Daishi Inoue
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
| | - DaeGwi Kim
- Department of Physics and Electronics, Osaka Metropolitan University Osaka 558-8585 Japan
| | - Yong-Jin Pu
- RIKEN Center for Emergent Matter Science (CEMS) Wako Saitama 351-0198 Japan
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Patera M, Zieliński M. Crystal field splitting and spontaneous polarization in InP crystal phase quantum dots. Sci Rep 2022; 12:15561. [PMID: 36114259 PMCID: PMC9481640 DOI: 10.1038/s41598-022-19076-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 08/24/2022] [Indexed: 11/11/2022] Open
Abstract
Crystal phase quantum dots are formed by vertically stacking zinc-blende and wurtzite phases during nanowire growth. In this work, we show, using an atomistic many-body approach, that crystal field splitting in the wurtzite phase, as well as spontaneous polarization originating from the phase interfaces, will strongly affect the properties of lowest hole states in InP crystal phase quantum dots, and in turn the excitonic optical spectra. We also show that the artifact-free modeling of crystal phase quantum dots should incorporate any additional potentials on equal footing with the electron-hole interaction. In this paper, we discuss a reliable theoretical framework that can be applied to investigate the electronic and optical properties of InP-based crystal phase quantum dots. The importance of accurate excitonic calculations for such systems is highlighted in view of their potential applications in nanowire photonics, yet further research is necessary for bringing theory and experiment in agreement.
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Affiliation(s)
- Martyna Patera
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Toruń, Poland
| | - Michał Zieliński
- Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Toruń, Poland.
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Stone D, Koley S, Remennik S, Asor L, Panfil YE, Naor T, Banin U. Luminescent Anisotropic Wurtzite InP Nanocrystals. NANO LETTERS 2021; 21:10032-10039. [PMID: 34807613 DOI: 10.1021/acs.nanolett.1c03719] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu3P nanocrystals. A comprehensive surface treatment with NOBF4 was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.
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Affiliation(s)
- David Stone
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Somnath Koley
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Sergei Remennik
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Lior Asor
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Yossef E Panfil
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Tom Naor
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Uri Banin
- Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
- The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
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Ren Z, Xu J, Le X, Lee C. Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G. MICROMACHINES 2021; 12:946. [PMID: 34442568 PMCID: PMC8398582 DOI: 10.3390/mi12080946] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2021] [Revised: 07/29/2021] [Accepted: 07/29/2021] [Indexed: 12/16/2022]
Abstract
Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.
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Affiliation(s)
- Zhihao Ren
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Jikai Xu
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
| | - Xianhao Le
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
| | - Chengkuo Lee
- Department of Electrical & Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore; (Z.R.); (J.X.); (X.L.)
- Center for Intelligent Sensors and MEMS (CISM), National University of Singapore, 5 Engineering Drive 1, Singapore 117608, Singapore
- National University of Singapore Suzhou Research Institute (NUSRI), Suzhou Industrial Park, Suzhou 215123, China
- NUS Graduate School for Integrative Science and Engineering, National University of Singapore, Singapore 117456, Singapore
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