Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities

Engineering ultra-strong electron-phonon coupling and nonclassical electron transport in crystalline gold with nanoscale interfaces

Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature (T) for T > ΘD, where ΘD is the Debye temperature. This is because the coupling (λ) between the electrons and the lattice vibrations, or phonons, in these metals is weak, with λ ~ 0.1-0.2. In this work, we outline a nanostructuring strategy of crystalline Au where this concept of metallic transport breaks down. We show that by embedding a distributed network of ultra-small Ag nanoparticles (AgNPs) of radius ~ 1-2 nm inside a crystalline Au shell, the electron-phonon interaction can be enhanced, with an effective λ as high as  ≈ 20. With increasing AgNP density, the electrical resistivity deviates from T-linearity and approaches a saturation to the Mott-Ioffe-Regel scale ρMIR ~ ha/e2 for both disorder (T → 0) and phonon (T ≫ ΘD)-dependent components of resistivity (here, a = 0.3 nm, is the lattice constant of Au).

Interfacial engineering of halide perovskites and two-dimensional materials

Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.

Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties

Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi-domain III-V/Si are hybrid structures, composed of bulk photo-active semiconductors with 2D topological semi-metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first-principle calculations, it is shown that the bi-domain III-V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo-generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection. Besides, the original topological properties of the 2D semi-metallic inclusions are also discussed. This comb-like heterostructure not only merges the superior optical properties of semiconductors with good transport properties of metallic materials, but also combines the high efficiency and tunability afforded by III-V inorganic bulk materials with the flexible management of nano-scale charge carriers usually offered by blends of organic materials. Physical properties of these novel hybrid heterostructures can be of great interest for energy harvesting, photonic, electronic or computing devices.