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Bai Y, Wang Y, Meng S. Ab Initio Self-Trapped Excitons. PHYSICAL REVIEW LETTERS 2024; 133:046903. [PMID: 39121420 DOI: 10.1103/physrevlett.133.046903] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Accepted: 06/14/2024] [Indexed: 08/11/2024]
Abstract
We propose a new formalism and an effective computational framework to study self-trapped excitons (STEs) in insulators and semiconductors from first principles. Using the many-body Bethe-Salpeter equation in combination with perturbation theory, we are able to obtain the mode- and momentum-resolved exciton-phonon coupling matrix element in a perturbative scheme and explicitly solve the real space localization of the electron (hole), as well as the lattice distortion. Further, this method allows us to compute the STE potential energy surface and evaluate the STE formation energy and Stokes shift. We demonstrate our approach using two-dimensional magnetic semiconductor chromium trihalides and a wide-gap insulator BeO, the latter of which features dark excitons, and make predictions of their Stokes shift and coherent phonon generation which we hope will spark future experiments such as photoluminescence and transient absorption studies.
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Ma Y, Liang H, Guan X, Xu S, Tao M, Liu X, Zheng Z, Yao J, Yang G. Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices? NANOSCALE HORIZONS 2024. [PMID: 39046195 DOI: 10.1039/d4nh00170b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/25/2024]
Abstract
With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.
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Affiliation(s)
- Yuhang Ma
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Huanrong Liang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Xinyi Guan
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Shuhua Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Meiling Tao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
| | - Xinyue Liu
- Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China.
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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Hoat DM, Van On V, Van Huan P, Guerrero-Sanchez J. Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC Adv 2024; 14:7241-7250. [PMID: 38419674 PMCID: PMC10901215 DOI: 10.1039/d3ra08866a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 02/12/2024] [Indexed: 03/02/2024] Open
Abstract
In this work, vacancy- and doping-based magnetism engineering in a non-magnetic 1T-PdO2 monolayer is explored in order to realize new two-dimensional (2D) spintronic materials. The pristine monolayer is an indirect gap semiconductor with a band gap of 1.45 (3.20) eV obtained using the PBE (HSE06) functional. Half-metallicity with a total magnetic moment of 3.95 μB is induced by creating a single Pd vacancy, where the magnetic properties are produced mainly by O atoms around the vacancy site. In contrast, the non-magnetic nature is preserved under the effects of a single O vacancy, however a band gap reduction in the order of 37.93% is achieved. Further doping with transition metals (TMs = V, Cr, Mn, and Fe) in the Pd sublattice and with non-metals (B, C, N, and F) in the O sublattice is investigated. TM impurities lead to the emergence of a diluted magnetic semiconductor nature, where total magnetic moments of 1.00, 2.00, and 3.00 μB are obtained in the V-, Cr(Fe)-, and Mn-doped systems, respectively. In these cases, the TMs' 3d electrons mainly originate the system's magnetism. Significant magnetization of the PdO2 monolayer is also achieved by doping with B, N, and F atoms, where either half-metallic or diluted magnetic semiconductor natures are induced. Herein, electronic and magnetic properties are regulated mainly by the interactions between the 2p orbital of the dopant, 4d orbital of the first neighbor Pd atoms, and 2p orbital of the second neighbor O atoms. Meanwhile, C impurity induces no magnetism in the PdO2 monolayer because of the strong electronic hybridization with their neighbor atoms. Results presented herein may introduce efficient approaches to engineer magnetism in a non-magnetic PdO2 monolayer, such that the functionalized systems are further recommended for prospective spintronic applications.
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Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University Binh Duong Province Vietnam
| | - Phan Van Huan
- Faculty of Basic Science, Binh Duong University, Binh Duong Province Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
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Van On V, Guerrero-Sanchez J, Hoat DM. Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping. Phys Chem Chem Phys 2024; 26:3587-3596. [PMID: 38214549 DOI: 10.1039/d3cp04977a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00μB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52μB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00μB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00μB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.
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Affiliation(s)
- Vo Van On
- Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Código Postal 22800, Baja California, Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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Nguyen Thi BN, Ha CV, Thi Ha Lien N, Guerrero-Sanchez J, Hoat DM. Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers. Phys Chem Chem Phys 2023; 25:32569-32577. [PMID: 37999640 DOI: 10.1039/d3cp02115g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2023]
Abstract
In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and ab initio molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1μB. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.
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Affiliation(s)
- Bich Ngoc Nguyen Thi
- Institute of Physics, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Cau Giay, Hanoi, Vietnam
| | - Chu Viet Ha
- Faculty of Physics, TNU-University of Education, Thai Nguyen, 250000, Vietnam
| | - Nghiem Thi Ha Lien
- Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan, Ba Dinh, Hanoi, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam.
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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Huy HA, Nguyen DK, Ha CV, Toan DD, Nguyen HN, Sanchez JG, Hoat DM. Functionalization of an ionic honeycomb KF monolayer via doping. NANOSCALE ADVANCES 2023; 5:4480-4488. [PMID: 37638150 PMCID: PMC10448308 DOI: 10.1039/d3na00351e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/21/2023] [Indexed: 08/29/2023]
Abstract
Doping has been widely employed to functionalize two-dimensional (2D) materials because of its effectiveness and simplicity. In this work, the electronic and magnetic properties of pristine and doped KF monolayers are investigated using first-principles calculations based on density functional theory (DFT). Phonon dispersion curves and ab initio molecular dynamics (AIMD) snapshots indicate good stability of the pristine material. The band structure shows an insulating behavior of the KF monolayer, with indirect gaps of 4.80 (6.53) eV as determined using the PBE (HSE06) functional. Its ionic character is also confirmed by the valence charge distribution and Bader charge analysis, and is generated by charge transfer from the K-4s orbital to the F-2p orbital. Doping at both anion and cation sites is explored using N/O and Ca/Sr as dopants, respectively, due to their dissimilar valence electronic configuration in comparison with that of the host atoms. It is found that the KF monolayer is significantly magnetized, where total magnetic moments of 2.00 and 1.00 μB are obtained via N and O/Ca/Sr doping, respectively. Moreover, the appearance of new middle-gap energy states leads to the development of a magnetic semiconductor nature, which is regulated by N-2p, O-2p, Ca-3d, Ca-4s, Sr-4d, and Sr-5s orbitals. Further investigation of codoping indicates that a magnetic-semiconductor nature is preserved, where the synergistic effects of dopants play a key role in the electronic and magnetic properties of the codoped systems. The results presented herein introduce doping as an efficient approach to functionalize the ionic KF monolayer to obtain prospective d0 spintronic materials, a functionality that is not accounted for by the pristine monolayer.
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Affiliation(s)
- Huynh Anh Huy
- Department of Physics, School of Education, Can Tho University Can Tho City Vietnam
| | - Duy Khanh Nguyen
- High-Performance Computing Lab (HPC Lab), Information Technology Center, Thu Dau Mot University Binh Duong Province Vietnam
| | - Chu Viet Ha
- Faculty of Physics, TNU-University of Education Thai Nguyen 250000 Vietnam
| | - Dang Duc Toan
- Iris Primary, Lower, Upper-Secondary School 586 CMT8 Street, Gia Sang Ward Thai Nguyen 250000 Vietnam
| | - Hang Nga Nguyen
- Dao Duy Tu High School Lane 26, Chu Van An Street, Hoang Van Thu Ward Thai Nguyen 250000 Vietnam
| | - J Guerrero Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código 22800 Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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Ha CV, Nguyen Thi BN, Trang PQ, Ponce-Pérez R, Kim Lien VT, Guerrero-Sanchez J, Hoat DM. Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers. RSC Adv 2023; 13:17968-17977. [PMID: 37323461 PMCID: PMC10263102 DOI: 10.1039/d3ra01867a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Accepted: 05/23/2023] [Indexed: 06/17/2023] Open
Abstract
Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 μB can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.
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Affiliation(s)
- Chu Viet Ha
- Faculty of Physics, TNU-University of Education Thai Nguyen Vietnam
| | - Bich Ngoc Nguyen Thi
- Institute of Physics, Vietnam Academy of Science and Technology 18 Hoang Quoc Viet, Cau Giay Hanoi Vietnam
| | - Pham Quynh Trang
- Faculty of Physics, TNU-University of Education Thai Nguyen Vietnam
| | - R Ponce-Pérez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
| | - Vu Thi Kim Lien
- Institute of Theoretical and Applied Research, Duy Tan University Hanoi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14 Ensenada Baja California Código Postal 22800 Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Hanoi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
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Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
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Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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Liu H, Ksenevich V, Zhao J, Gao J. Robust electronic properties of monolayer BeO against molecule adsorption. Phys Chem Chem Phys 2023; 25:8853-8860. [PMID: 36916352 DOI: 10.1039/d2cp05980k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2023]
Abstract
The stability of two-dimensional (2D) materials upon exposure to ambient conditions is significant for their applications. In this paper, the air stability of the BeO monolayer with and without vacancy defects is carefully studied via DFT calculations. Our results suggest high structural and electronic stability of BeO monolayers upon exposure to O2, N2, CO2 and H2O even with Be vacancies. O vacancies are not favorable in free-standing BeO monolayers and can be easily healed by H2O or CO2 adsorption. Due to the high stability, large band gap and atomic flat surface, BeO monolayers are expected to be an ideal encapsulation material for 2D electronic devices.
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Affiliation(s)
- Hongsheng Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
- Dalian University of Technology and Belarusian State University Joint Institute & Innovation Center, Dalian 116024, China
| | - Vitaly Ksenevich
- Dalian University of Technology and Belarusian State University Joint Institute & Innovation Center, Dalian 116024, China
- Faculty of Physics, Belarusian State University, Nezalezhnastsi av.4, Minsk 220030, Belarus
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
- State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment (Dalian University of Technology), Dalian 116024, China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
- State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment (Dalian University of Technology), Dalian 116024, China
- Dalian University of Technology and Belarusian State University Joint Institute & Innovation Center, Dalian 116024, China
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Li HX, Wang MH, Li Q, Cui ZH. Two-dimensional Be 2Al and Be 2Ga monolayer: anti-van't Hoff/Le Bel planar hexacoordinate bonding and superconductivity. Phys Chem Chem Phys 2023; 25:1105-1113. [PMID: 36514964 DOI: 10.1039/d2cp04595h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Because of the electron deficiency of boron, a triangular network with planar hexacoordination is the most common structural and bonding property for isolated boron clusters and two-dimensional (2D) boron sheets. However, this network is a rule-breaking structure and bonding case for all other main-group elements. Herein, the Be2M (M = Al and Ga) 2D monolayer with P6/mmm space group was found to be the lowest-energy structure with planar hexacoordinate Be/Al/Ga motifs. More interestingly, Be2Al and Be2Ga were observed to be intrinsic phonon-mediated superconductors with a superconducting critical temperature (Tc) of 5.9 and 3.6 K, respectively, where compressive strain could further enhance their Tc. The high thermochemical and kinetic stability of Be2M make a promising candidate for experimental realization, considering its high cohesive energy, absence of soft phonon modes, and good resistance to high temperature. Moreover, the feasibility of directly growing Be2M on the electride Ca2N substrate was further demonstrated, where its intriguing electronic and superconducting properties were well maintained in comparison with the freestanding monolayer. The Be2M monolayer with rule-breaking planar hexacoordinate motifs firmly pushes the ultimate connection of the "anti-van't Hoff/Le Bel" structure with promising physical properties.
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Affiliation(s)
- Hai-Xia Li
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China.
| | - Meng-Hui Wang
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China.
| | - Quan Li
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130023, People's Republic of China
| | - Zhong-Hua Cui
- Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China. .,Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Jilin University, Changchun 130023, China
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11
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Liu H, Feng K, Lu H, Meng X. First-principles calculations of the BeO monolayer with chemical functionalization. Phys Chem Chem Phys 2022; 24:7797-7804. [PMID: 35297445 DOI: 10.1039/d1cp05640a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, extensive experimental and theoretical studies on two-dimensional materials have attracted enormous interest in exploring the properties of these materials by decorating their surfaces. In the present work, we present a detailed investigation of the structures, and electronic and magnetic properties of pristine, hydrogenated, and fluorinated BeO monolayers using the ab initio density functional theory approach. Structurally, the most stable adsorption sites are directly above the host Be atom for half-hydrogenation, above the middle of the Be-O bond for half-fluorination, and directly above the host Be atom and below the host O atom for full-hydrogenation and full-fluorination. Moreover, the electronic and magnetic properties of the BeO monolayer exhibit high sensitivity to chemical functionalization: half-hydrogenation induces nonmagnetic-magnetic transition and the reduction of the band gap reaches about 75%. Full-hydrogenation results in metallization of the BeO monolayer. Half-fluorination makes the BeO monolayer a 100% spin polarized material regardless of the adsorption site. However, depending on different adsorption sites, full-fluorination can produce either magnetically half-metallic or nonmagnetic semiconductor structures. These results demonstrate that the tunability of the electronic and magnetic properties of the BeO monolayer can be realized by chemical functionalization for future nano-electronic and spintronic device applications.
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Affiliation(s)
- Hanlu Liu
- College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Kehan Feng
- College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Haiming Lu
- College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Xiangkang Meng
- College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
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Luo D, Yin K, Dronskowski R. Existence of BeCN 2 and Its First-Principles Phase Diagram: Be and C Introducing Structural Diversity. J Am Chem Soc 2022; 144:5155-5162. [DOI: 10.1021/jacs.2c00592] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Dongbao Luo
- Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry, RWTH Aachen University, 52056 Aachen, Germany
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, Liuxian Blvd, Nanshan District, 518055 Shenzhen, China
| | - Ketao Yin
- School of Physics and Electronic Engineering, Linyi University, 276005 Linyi, China
| | - Richard Dronskowski
- Chair of Solid-State and Quantum Chemistry, Institute of Inorganic Chemistry, RWTH Aachen University, 52056 Aachen, Germany
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, Liuxian Blvd, Nanshan District, 518055 Shenzhen, China
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Zhang B, Zhu W, Cao L, Yu Y, Qin D, Huang X, Deng Y. Toward Reduced Interface Contact Resistance: Controllable Surface Energy of Sb 2Te 3 Films via Tuning the Crystallization and Orientation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:10955-10965. [PMID: 35168322 DOI: 10.1021/acsami.1c22908] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electrical contact resistance between a metal and semiconductor is one of the keys to improving the output performance of thin-film thermoelectric devices. Herein, we reduced the interface contact resistance by controlling the surface energy of a Sb2Te3 semiconductor via tuning of the crystallization and orientation, preparing an intrinsically compact and flat Sb2Te3 film with high surface energy and low roughness, which can give rise to a low average specific contact resistivity (8.2 × 10-6 Ω cm2) with a Ni/Cu metal. The improvement in interface electrical properties is due to the increase in the surface energy and decrease in the surface roughness of the semiconductor surface, which lead to a transformation from three-dimensional island-shaped nucleation to two-dimensional layered nucleation for surface-attached metal films, forming a longitudinally tight connection contact with a low resistance. This approach allows the resistivity to become close to the fundamental theoretically calculated limit. Our work provides a new idea for reducing the contact resistivity of thin-film thermoelectric devices, which is conducive to supporting the development of thermoelectric semiconductor planarization.
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Affiliation(s)
- Bohan Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100083, China
| | - Wei Zhu
- Research Institute for Frontier Science, Beihang University, Beijing 100083, China
- Beijing Advanced Innovation Center for Biomedical Engineering, Beihang University, Beijing 100083, China
| | - Lili Cao
- Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing 100192, China
| | - Yuedong Yu
- School of Materials Science and Engineering, Beihang University, Beijing 100083, China
| | - Dongli Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100083, China
| | - Xin Huang
- School of Materials Science and Engineering, Beihang University, Beijing 100083, China
| | - Yuan Deng
- Research Institute for Frontier Science, Beihang University, Beijing 100083, China
- Hangzhou Innovation Institute, Beihang University, Hangzhou 310052, China
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14
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Islam ASJ, Islam MS, Mim NZ, Akbar MS, Hasan MS, Islam MR, Stampfl C, Park J. Vacancy-Induced Thermal Transport and Tensile Mechanical Behavior of Monolayer Honeycomb BeO. ACS OMEGA 2022; 7:4525-4537. [PMID: 35155944 PMCID: PMC8829849 DOI: 10.1021/acsomega.1c06491] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 01/14/2022] [Indexed: 06/14/2023]
Abstract
Because of the rapid shrinking trend of integrated circuits, the performances of nanodevices and nanomechanical systems are greatly affected by the joule heating and mechanical failure dilemma. In addition, structural defects are inevitable during experimental synthesis of nanomaterials, which may alter their physical properties significantly. Investigation of the thermal transport and mechanical behavior of nanostructured materials with structural defects is thus a crucial requirement. In this study, the thermal conductivity (TC) and tensile mechanical behavior of monolayer honeycomb BeO are systematically explored using molecular dynamics simulations. An infinite length bulk TC of ∼277.77 ± 8.93 W/mK was found for the pristine monolayer BeO. However, the insertion of 1% single vacancy (SV) and double vacancy (DV) defects reduces the TC by ∼36.98 and ∼33.52%, respectively. On the other hand, the uniaxial tensile loading produces asymmetrical fracture stress, elastic modulus, and fracture strain behaviors in the armchair and zigzag directions. The elastic modulus was reduced by ∼4.7 and ∼6.6% for 1% SV defects along the armchair and zigzag directions, respectively, whereas the reduction was ∼2.7 and ∼ 5.1% for 1% DV defects. Moreover, because of the strong symmetry-breaking effect, both the TC and mechanical strength were significantly lower for the SV defects than those for the DV defects. The highly softening and decreasing trends of the phonon modes with increasing vacancy concentration and temperature, respectively, were noticed for both types of defects, resulting in a reduction of the TC of the defected structures. These findings will be helpful for the understanding of the heat transport and mechanical characteristics of monolayer BeO as well as provide guidance for the design and control of BeO-based nanoelectronic and nanoelectromechanical devices.
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Affiliation(s)
- A. S.
M. Jannatul Islam
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
| | - Md. Sherajul Islam
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
- Department
of Electrical and Biomedical Engineering, University of Nevada, Reno, Nevada 89557, United States
| | - Nura Zannat Mim
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
| | - Md. Shahadat Akbar
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
| | - Md. Sayed Hasan
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
| | - Md. Rasidul Islam
- Department
of Electrical and Electronic Engineering, Khulna University of Engineering &Technology, Khulna 9203, Bangladesh
| | - Catherine Stampfl
- School
of Physics, The University of Sydney, Sydney, New South Wales 2006, Australia
| | - Jeongwon Park
- Department
of Electrical and Biomedical Engineering, University of Nevada, Reno, Nevada 89557, United States
- School
of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada
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15
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Yuan S, Xu B, Li S, Zhu W, Lei S, Guo W, Ren H. Highly efficient photocatalytic reduction of nitrogen into ammonia by single Ru atom catalyst supported by BeO monolayer. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.06.077] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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16
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Nguyen DK, Guerrero-Sanchez J, Hoat DM. Introducing the 1H-Na 2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties. Phys Chem Chem Phys 2022; 24:27505-27514. [DOI: 10.1039/d2cp04613j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
(a) Planar average potential (inset: Bader charge analysis) and (b) electronic localization function (iso-surface value: 0.85) of the Na2S monolayer.
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Affiliation(s)
- Duy Khanh Nguyen
- High-Performance Computing Lab (HPC Lab), Information Technology Center, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J. Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, 22800, Mexico
| | - D. M. Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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17
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Lien VTK, Van On V, Guerrero-Sanchez J, Rivas-Silva JF, Cocoletzi GH, Hoat DM. Theoretical prediction of alkali oxide M 2O (M = Na and K) monolayers and formation of their Janus structure. NEW J CHEM 2022. [DOI: 10.1039/d2nj03118c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Formation of the Janus structure.
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Affiliation(s)
- Vu Thi Kim Lien
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Vo Van On
- Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J. Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - J. F. Rivas-Silva
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla, 72570, Mexico
| | - Gregorio H. Cocoletzi
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla, 72570, Mexico
| | - D. M. Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
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18
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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19
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Bafekry A, Faraji M, Fadlallah MM, Hoat DM, Khatibani AB, Sarsari IA, Ghergherehchi M. Effect of adsorption and substitutional B doping at different concentrations on the electronic and magnetic properties of a BeO monolayer: a first-principles study. Phys Chem Chem Phys 2021; 23:24922-24931. [PMID: 34726216 DOI: 10.1039/d1cp03196a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The 2D form of the BeO sheet has been successfully prepared (Hui Zhang et al., ACS Nano, 2021, 15, 2497). Motivated by these exciting experimental results on the 2D layered BeO structure, we studied the effect of the adsorption of B atoms on BeO (B@BeO) and substitutional B atoms (B-BeO) at the Be site at different B concentrations. We investigated the structural stability and the mechanical, electronic, magnetic, and optical properties of the mentioned structures using first-principles calculations. We found out that hexagonal BeO monolayers with adsorbed and dopant B atoms have different mechanical stabilities at different concentrations. B@BeO and B-BeO monolayers are brittle structures, and B@BeO structures are more rigid than B-BeO monolayers (at the same B concentration). The adsorption and the formation energy per B atom decrease as the B concentration increases. In comparison, the work function increases when increasing the B concentration. The work function of B@BeO is higher than the corresponding value of B-BeO (at the same B concentration). The magnetic moment linearly increases as the B concentration increases. BeO is a semiconductor with an indirect bandgap of 5.3 eV. The B@BeO and B-BeO structures are semiconductors, except for 3B-BeO (14.2% doped concentration), which is a metal. The bandgap is 1.25 eV for most of the adsorbed atom concentrations. For B-BeO, the bandgap decreases to zero at a concentration of 14.2%. The bandgap of the B-BeO monolayer at different B concentrations is smaller than the corresponding values of the B@BeO monolayer, which indicates that B substitutional doping has a greater effect on the electronic structure of the BeO monolayer than B adsorption doping. We investigated the optical properties, including the dielectric function and absorption coefficient. The results indicate good optical absorption in the range of infrared and ultraviolet energies for the B adsorbed and doped BeO monolayer.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, Tehran, 19839 69411, Iran.
| | - M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - M M Fadlallah
- Department of Physics, Faculty of Science, Benha University, Benha, 13518, Egypt
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Hanoi, 100000, Vietnam.,Faculty of Natural Sciences, Duy Tan University, Da Nang, 550000, Vietnam
| | | | | | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
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20
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Bafekry A, Faraji M, Karbasizadeh S, Khatibani AB, Ziabari AA, Gogova D, Ghergherehchi M. Point defects in two-dimensional BeO monolayer: a first-principles study on electronic and magnetic properties. Phys Chem Chem Phys 2021; 23:24301-24312. [PMID: 34673868 DOI: 10.1039/d1cp03421a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Very recently, the 2D form of BeO monolayer has been successfully fabricated [Hui Zhang et al., ACS Nano, 2021, 15, 2497]. Motivated by these exciting experimental results on 2D layered BeO structures, the effect of atom adsorption, substitutional doping and vacancy defects on the electronic and magnetic properties of a hexagonal BeO monolayer have been systematically investigated employing density functional theory-based first-principles calculations. We found out that BeO monolayer is a semiconductor with an indirect band gap of 5.9 eV. Next, a plethora of atoms (27 in total) were adsorbed on the surface of BeO monolayer to tailor its electronic properties. The bond length, work function, difference in charge and magnetic moment were also calculated for all modifications covering the vacancy defects and substitutional doping. The band gap is also supplied for these changes, showing how these adjustments can provide amazing opportunities in granting a variety of options in band gap engineering and in transforming the BeO monolayer from a semiconductor to a dilute magnetic semiconductor or half-metal in view of different applications. The formation energy of the defects was also computed as an important indicator for the stability of the defected structures, when created in a real experiment. We have theoretically demonstrated several possible approaches to modify the properties of BeO monolayer in a powerful and controllable manner. Thus, we expect to inspire many experimental studies focused on two dimensional BeO growth and property tuning, and exploration for applications in advanced nanoelectronics.
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Affiliation(s)
- A Bafekry
- Department of Radiation Application, Shahid Beheshti University, 19839 69411 Tehran, Iran.
| | - M Faraji
- TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu, 06560, Ankara, Turkey
| | - S Karbasizadeh
- Department of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran
| | | | | | - D Gogova
- Central Laboratory of Solar Energy and New Energy Sources at the Bulg. Acad. Sci., 72 Tzarigtadsko Chaussee Blvd., 1784 Sofia, Bulgaria
| | - M Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, Korea.
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21
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Hoat DM, Nguyen DK, Guerrero-Sanchez J, Ponce-Pérez R, Rivas-Silva JF, Van On V, Cocoletzi GH. Nitrogen doping and oxygen vacancy effects on the fundamental properties of BeO monolayer: a DFT study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:325305. [PMID: 34082415 DOI: 10.1088/1361-648x/ac07cd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Accepted: 06/03/2021] [Indexed: 06/12/2023]
Abstract
In practice, modifying the fundamental properties of low-dimensional materials should be realized before incorporating them into nanoscale devices. In this paper, we systematically investigate the nitrogen (N) doping and oxygen vacancy (OV) effects on the electronic and magnetic properties of the beryllium oxide (BeO) monolayer using first-principles calculations. Pristine BeO single layer is a non-magnetic insulator with an indirectK-Γ gap of 5.300 eV. N doping induces a magnetic semiconductor nature, where the spin-up and spin-down band gaps depend on the dopant concentration and N-N separation. Creating one OV leads to the energy gap reduction of 31.06% with no spin-polarization, which is due to the abundant 2p electrons of the Be atoms nearest the OV site. The further increase to two OVs and varying the OV-OV distance affect the band gap values, however the spin independence is retained. The magnetic semiconducting behavior is also obtained by the simultaneous N doping and OV presence. Calculations reveal significant magnetization of the BeO@1N, BeO@2N-n, BeO@NOV-nsystems, which is produced mainly by the spin-up N-2p state. Except for the BeO@NOV-1 and BeO@NOV-2, whose magnetic properties are created by the spin-up 2p state of the Be atoms closest to the OV site. The variation of the N-N and N-OV distances keeps the ferromagnetic ordering in the BeO@2N and BeO@NOV layers. Results presented herein may propose efficient methods to artificially modify the physical properties of BeO monolayer, leading to the formation of novel two-dimensional (2D) materials for optoelectronic and spintronic applications.
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Affiliation(s)
- D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Duy Khanh Nguyen
- Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - R Ponce-Pérez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico
| | - J F Rivas-Silva
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570, Mexico
| | - Vo Van On
- Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam
| | - Gregorio H Cocoletzi
- Benemérita Universidad Autónoma de Puebla, Instituto de Física, Apartado Postal J-48, Puebla 72570, Mexico
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