Measurement of Exciton and Trion Energies in Multistacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes

Enhanced interactions of excitonic complexes in free-standing WS2

Excitonic complexes, bound states of electrons and holes, provide a promising platform in monolayer transition-metal dichalcogenide (TMDC) semiconductors for investigating diverse many-body interaction phenomena. The surrounding dielectric environment has been found to strongly influence the excitonic properties of the TMDC monolayers. While the impact of different dielectric surroundings on two-dimensional semiconductor materials and their strong correlations have been well studied, the effects on exciton formation and its properties resulting from a further reduction in dielectric screening remain elusive. In this study, we examined free-standing tungsten disulfide (WS2) monolayers, where the efficient generation of higher-order correlated excitonic complexes is readily observed. This phenomenon arises from the effective mutual interactions among excitons and internal carriers, attributed to the modulated exciton dynamics generated by the further reduced dielectric screening effect in the freestanding structure. The formation efficiency of excitonic complexes is enhanced and the multiple biexciton species (five particles such as charged biexcitons and acceptor/donor-bound biexcitons) are successfully induced under low excitation intensity and moderate temperature conditions. Our findings offer valuable insights into the influence of the dielectric environment on exciton interactions and enable a productive avenue for exploring fundamental many-body interactions, providing new possibilities for dielectric engineering of atomic thin semiconductors.

Pinhole-free 2D Ruddlesden-Popper perovskite layer with close packed large crystalline grains, suitable for optoelectronic applications

Here, we achieved pinhole-free 2D Ruddlesden-Popper Perovskite (RPP) BA₂PbI₄ layers with close packed crystalline grains with dimension of about 30 × 30 µm², which have been demonstrated to be favorable for optoelectronic applications, such as fast response RPP-based metal/semiconductor/metal photodetectors. We explored affecting parameters in hot casting of BA₂PbI₄ layers, and proved that oxygen plasma treatment prior to hot casting plays a significant role to achieve high quality close packed polycrystalline RPP layers at lower hot cast temperatures. Moreover, we demonstrate that crystal growth of 2D BA₂PbI₄ can be dominantly controlled by the rate of solvent evaporation through substrate temperature or rotational speed, while molarity of the prepared RPP/DMF precursor is the dominant factor that determines the RPP layer thickness, and can affect the spectral response of the realized photodetector. Benefiting from the high light absorption and inherent chemical stability of 2D RPP layers, we achieved high responsivity and stability, and fast response photodetection from perovskite active layer. We achieved a fast photoresponse with rise and fall times of 189 µs and 300 µs, and the maximum responsivity of 119 mA/W and detectivity of 2.15 × 10⁸ Jones in response to illumination wavelength of 450 nm. The presented polycrystalline RPP-based photodetector benefits from a simple and low-cost fabrication process, suitable for large area production on glass substrate, a good stability and responsivity, and a promising fast photoresponse, even around that of exfoliated single crystal RPP-based counterparts. However, it is well known that exfoliation methods suffer from poor repeatability and scalability, which make them incompatible with mass production and large area applications.

Exciton polariton interactions in Van der Waals superlattices at room temperature

Monolayer transition-metal dichalcogenide (TMD) materials have attracted a great attention because of their unique properties and promising applications in integrated optoelectronic devices. Being layered materials, they can be stacked vertically to fabricate artificial van der Waals lattices, which offer unique opportunities to tailor the electronic and optical properties. The integration of TMD heterostructures in planar microcavities working in strong coupling regime is particularly important to control the light-matter interactions and form robust polaritons, highly sought for room temperature applications. Here, we demonstrate the systematic control of the coupling-strength by embedding multiple WS₂ monolayers in a planar microcavity. The vacuum Rabi splitting is enhanced from 36 meV for one monolayer up to 72 meV for the four-monolayer microcavity. In addition, carrying out time-resolved pump-probe experiments at room temperature we demonstrate the nature of polariton interactions which are dominated by phase space filling effects. Furthermore, we also observe the presence of long-living dark excitations in the multiple monolayer superlattices. Our results pave the way for the realization of polaritonic devices based on planar microcavities embedding multiple monolayers and could potentially lead the way for future devices towards the exploitation of interaction-driven phenomena at room temperature.

Preparation, properties and applications of two-dimensional superlattices

As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.

Collective interlayer pairing and pair superfluidity in vertically stacked layers of dipolar excitons

Layered bosonic dipolar fluids have been suggested to host a condensate of interlayer molecular bound states. However, experimental observation has remained elusive. Motivated by two recent experimental works [C. Hubert et al., Phys. Rev. X9, 021026 (2019) and D. J. Choksy et al., Phys. Rev. B 103, 045126 (2021)], we theoretically study, using numerically exact quantum Monte Carlo calculations, the experimental signatures of collective interlayer pairing in vertically stacked indirect exciton (IX) layers. We find that IX energy shifts associated with each layer evolve nontrivially as a function of density imbalance following a nonmonotonic trend with a jump discontinuity at density balance, identified with the interlayer IX molecule gap. This behavior discriminates between the superfluidity of interlayer bound pairs and independent dipole condensation in distinct layers. Considering finite temperature and finite density imbalance conditions, we find a cascade of Berezinskii-Kosterlitz-Thouless (BKT) transitions, initially into a pair superfluid and only then, at lower temperatures, into complete superfluidity of both layers. Our results may provide a theoretical interpretation of existing experimental observations in GaAs double quantum well (DQW) bilayer structures. Furthermore, to optimize the visibility of pairing dynamics in future studies, we present an analysis suggesting realistic experimental settings in GaAs and transition metal dichalcogenide (TMD) bilayer DQW heterostructures where collective interlayer pairing and pair superfluidity can be clearly observed.

Two-Dimensional GeC2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio

In this study, we present that 2D tetrahex-GeC₂ materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC₂ monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC₂ monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 10⁵ for the tetrahex-GeC₂ monolayer. A striking negative differential conductance arises with the maximum I_peak/I_valley on the order of 10⁴ under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC₂ monolayer. Overall, the 2D tetrahex-GeC₂ monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.

Exposing the trion's fine structure by controlling the carrier concentration in hBN-encapsulated MoS2

Atomically thin materials, like semiconducting transition metal dichalcogenides, are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. In this work, high-quality van der Waals heterostructures assembled from hBN-encapsulated monolayer MoS₂ are studied with the aid of photoluminescence, photoluminescence excitation, and reflectance contrast experiments. We demonstrate that carrier concentration in MoS₂ monolayers, arising from charge transfer from impurities in the substrate, can be significantly tuned within one order of magnitude by the modification of the bottom hBN flake thickness. The studied structures, characterized by spectral lines with linewidths approaching the narrow homogeneously broadened limit enabled observations of subtle optical and spin-valley properties of excitonic complexes. Our results allowed us to resolve three optically-active negatively charged excitons in MoS₂ monolayers, which are assigned to the intravalley singlet, intervalley singlet, and intervalley triplet states.