High-Frequency Graphene Base Hot-Electron Transistor

3D Porous Graphene Architecture Integrated with Cu2O for Enhanced Electrochemical Sensing Performance

Construction and functionalization of a 3D graphene architecture are crucial to harness and extend the unique features of graphene and thus essential for its numerous conventional and novel applications. Herein, a 3D honeycomb-patterned porous graphene architecture is constructed through a facile and low-cost self-assembly process and then integrated with Cu2O nanoparticles via a simple electrodeposition procedure. The 3D porous graphene structure is prepared by the breath figure method using a graphene oxide (GO)-based complex in which GO is modified by a surfactant as the casting material. Benefiting from the intercalation of the surfactant between the GO nanosheets and the fabrication of a 3D porous structure, the aggregation inhibition of GO nanosheets and increases in accessible surface area are realized at both nano- and microscales, resulting in good electrochemical performance. Moreover, the deposition of Cu2O nanoparticles can further improve the electrochemical sensing performance of the porous reduced graphene oxide (rGO) structure. Extremely low detection limit (30.72 nM) with a linear range of 0 μM to 30 μM, excellent anti-interference, repeatability, reproducibility, stability, and high accuracy for actual sample testing are shown when the 3D porous Cu2O/rGO film is applied as an electrochemical sensor for DA detection. This work provides not only a superior electrochemical biosensor but also a simple, yet effective and general strategy for the construction and functionalization of a 3D graphene structure.

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron transistor (HET) has been proposed. This device has the advantage of high working speed and some complex logic functions can be completed by using one component. Here, we demonstrate a mixed-dimensional HET composed of GaN/AlN microwires, graphene (Gr), and Si. The electrons between GaN/AlN are injected into graphene by an F-N tunneling mechanism to achieve high speed hot electrons, then cross graphene by ballistic transport, and are collected in a nearly lossless manner through a low-barrier Si. Therefore, the device shows a record DC gain of 16.2, a collection efficiency close to the limit of 99.9% based on the graphene hot electron transistor (GHET), an emitter current density of about 68.7 A/cm², and a high on/off current ratio reaching ∼10⁷. Meanwhile, the current saturation range is wide, beyond those of most GHETs. It has potential applications as a power amplifier.

Dual-mode frequency multiplier in graphene-base hot electron transistor

Since quantum computers have been gradually introduced in countries around the world, the development of the many related quantum components that can operate independently of temperature has become more important for enabling mature products with low power dissipation and high efficiency. As an alternative to studying cryo-CMOSs (complementary metal-oxide-semiconductors) to achieve this goal, quantum tunneling devices based on 2D materials can be examined instead. In this work, a vertical graphene-based quantum tunneling transistor has been used as a frequency modulator. The transistor can operate via different quantum tunneling mechanisms and generates, by applying the appropriate bias, voltage-resistance curves characteristic of variable nonlinear resistance for both base and emitter voltages. We experimentally demonstrate frequency modulation from input signals over the range of 100 kHz to 10 MHz, enabling a tunable frequency doubler or tripler in just a single transistor. This frequency multiplication with a tunneling mechanism makes the graphene-based tunneling device a promising option for frequency electronics in the emerging field of quantum technologies.