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Zhu Y, Chen T, Li Y, Qiao L, Ma X, Liu C, Hu T, Gao H, Ren W. Multipiezo Effect in Altermagnetic V 2SeTeO Monolayer. NANO LETTERS 2024; 24:472-478. [PMID: 38146703 DOI: 10.1021/acs.nanolett.3c04330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Strain engineering has been used as an efficient method to modulate various properties of quantum materials and electronic devices. One may establish piezo effects based on a disciplined response to the strain in multifunctional nanosystems. Inspired by a recent theoretical proposal on the interesting piezomagnetism and C-paired valley polarization in the V2Se2O monolayer, we predict a stable altermagnetic Janus monolayer V2SeTeO using density functional theory calculations. It exhibits a novel "multipiezo" effect combining piezoelectricity, piezovalley, and piezomagnetism. Most interestingly, the valley polarization and the net magnetization under strain in V2SeTeO exceed these in V2Se2O, along with the additional large piezoelectric coefficient. The "multipiezo" effect makes Janus monolayer V2SeTeO as a tantalizing material for potential applications in nanoelectronics, optoelectronics, spintronics, and valleytronics.
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Affiliation(s)
- Yu Zhu
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Taikang Chen
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Yongchang Li
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Lei Qiao
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Xiaonan Ma
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Chang Liu
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Tao Hu
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Heng Gao
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
| | - Wei Ren
- Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- Zhejiang Laboratory, Hangzhou 311100, China
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2
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Zheng X, Du Q, Zhao J, Li M, Liu Q, Ling F, Zhang Y, Wang W, Wang F, Qin S. Optical-fiber-integrated high-speed organic phototransistor with broadband imaging capacity. OPTICS EXPRESS 2023; 31:33378-33386. [PMID: 37859120 DOI: 10.1364/oe.502564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 09/13/2023] [Indexed: 10/21/2023]
Abstract
Fiber optic communication is becoming the central pillar of modern high-speed communication technology, which involves the abundant fiber components. Currently, most of photodetectors are fabricated on the silicon chip, so mass fiber-to-chip interfaces increase the complexity of advanced optoelectronic system, and also grow the risk of optical information loss. Here, we report an all-fiber organic phototransistor by employing rubrene single crystal and few-layer graphene to realize the "plug-to-play" operation. The device shows a broadband photoresponse from the ultraviolet to visible range, with fast response times of approximately 130/170 µs and reasonable specific detectivity of 6 × 109 Jones, which is close to the level of commercial on-chip device. Finally, several imaging applications are successfully demonstrated by deploying this all-fiber device. Our work provided an efficient strategy for fabricating all-fiber organic devices, and confirmed their significant potential in future optical fiber optoelectronics.
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3
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Bao X, Zhuo L, Dong W, Guo J, Wang G, Wang B, Wei Q, Huang Z, Li J, Shen J, Yu J, Nie Z, Ren W, Liu G, Xing G, Shao H. Black Arsenic-Phosphorus Nanosheets for Highly Responsive Photodetection and Dual-Wavelength Ultrafast Pulse Generation at Telecommunication Bands. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52270-52278. [PMID: 36350786 DOI: 10.1021/acsami.2c10857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Black arsenic-phosphorus (b-AsP), an alloy containing black phosphorus and arsenic in the form of b-AsxP1-x, has a broadly tunable band gap changing with the chemical ratios of As and P. Although mid-infrared photodetectors and mode-locked or Q-switched pulse lasers based on b-AsP (mostly b-As0.83P0.17) are investigated, the potential of this family of materials for near-infrared photonic and optoelectronic applications at telecommunication bands is not fully explored. Here, we have verified a multifunctional fiber device based on b-As0.4P0.6 nanosheets for highly responsive photodetection and dual-wavelength ultrafast pulse generation at around 1550 nm. The fiber laser with a saturable absorber (SA) based on b-As0.4P0.6 nanosheets can output dual-wavelength mode-locking pulses with a larger bandwidth and spectral separation than those based on other two-dimensional (2D) materials. Remarkably, it is found that the b-As0.4P0.6-based photodetector can achieve a high responsivity of 10,200 A/W at 1550 nm and a peak responsivity of 2.29 × 105 A/W at 980 nm. Our work suggests that b-As0.4P0.6 shows great potential in ultrafast photonics, dual-comb spectroscopy, and infrared signal detection.
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Affiliation(s)
- Xiaozhi Bao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Linqing Zhuo
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
- School of Electronics and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
| | - Weikang Dong
- 1 Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Junpo Guo
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Gang Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Bingzhe Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, China
| | - Zongyu Huang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Jianding Li
- Huzhou Key Laboratory of Materials for Energy Conversion and Storage, School of Science, Huzhou University, Huzhou 313000, China
| | - Jingjun Shen
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Jianhui Yu
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes, Department of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China
| | - Zhaogang Nie
- School of Physics & Photoelectric Engineering, Guangdong University of Technology, Guangzhou 510650, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Guanyu Liu
- School of Physics & Photoelectric Engineering, Guangdong University of Technology, Guangzhou 510650, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
| | - Huaiyu Shao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau SAR 999078, China
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Huang Y, Zhang L, Zhou X, Liao L, Jin F, Han X, Dong T, Xu S, Zhao L, Dai Y, Cheng Q, Huang X, Zhang Q, Wang L, Wang NL, Yue M, Bai X, Li Y, Wu Q, Gao HJ, Gu G, Wang Y, Zhou XJ. Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi 2Sr 2CaCu 2O 8+δ in Water-Bearing Environments. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39489-39496. [PMID: 35976742 DOI: 10.1021/acsami.2c08997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The physical properties of copper oxide high-temperature superconductors have been studied extensively, such as the band structure and doping effects of Bi2Sr2CaCu2O8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in water-bearing environments. Herein, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flakes with exposure to water for different time intervals was tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl, and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in an acidic environment. Our results imply that hydrogen ions are primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in the Bi-O plane are relatively stable when compared to the inner atoms in Sr-O, Ca-O, and Cu-O planes. This work contributes toward understanding the chemical stability of a Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.
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Affiliation(s)
- Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Xiaocheng Zhou
- Jiangsu Key Laboratory of New Power Batteries, Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Lei Liao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Feng Jin
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Tao Dong
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Shuxiang Xu
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lin Zhao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yunyun Dai
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Qiuzhen Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xinyu Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Qingming Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lifen Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Nan-Lin Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Ming Yue
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yafei Li
- Jiangsu Key Laboratory of New Power Batteries, Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, School of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Qiong Wu
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Yeliang Wang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xing-Jiang Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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5
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Lin H, Zhang Z, Zhang H, Lin KT, Wen X, Liang Y, Fu Y, Lau AKT, Ma T, Qiu CW, Jia B. Engineering van der Waals Materials for Advanced Metaphotonics. Chem Rev 2022; 122:15204-15355. [PMID: 35749269 DOI: 10.1021/acs.chemrev.2c00048] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
The outstanding chemical and physical properties of 2D materials, together with their atomically thin nature, make them ideal candidates for metaphotonic device integration and construction, which requires deep subwavelength light-matter interaction to achieve optical functionalities beyond conventional optical phenomena observed in naturally available materials. In addition to their intrinsic properties, the possibility to further manipulate the properties of 2D materials via chemical or physical engineering dramatically enhances their capability, evoking new science on light-matter interaction, leading to leaped performance of existing functional devices and giving birth to new metaphotonic devices that were unattainable previously. Comprehensive understanding of the intrinsic properties of 2D materials, approaches and capabilities for chemical and physical engineering methods, the resulting property modifications and novel functionalities, and applications of metaphotonic devices are provided in this review. Through reviewing the detailed progress in each aspect and the state-of-the-art achievement, insightful analyses of the outstanding challenges and future directions are elucidated in this cross-disciplinary comprehensive review with the aim to provide an overall development picture in the field of 2D material metaphotonics and promote rapid progress in this fast emerging and prosperous field.
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Affiliation(s)
- Han Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Zhenfang Zhang
- School of Textile Science and Engineering, Xi'an Polytechnic University, Xi'an 710048, China
| | - Huihui Zhang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Keng-Te Lin
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia
| | - Xiaoming Wen
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yao Liang
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Yang Fu
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Alan Kin Tak Lau
- Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Tianyi Ma
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, Victoria 3000, Australia.,The Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.,Centre for Translational Atomaterials, School of Science, Computing and Engineering Technologies, Swinburne University of Technology, P.O. Box 218, Hawthorn, Victoria 3122, Australia
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6
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Dai Y, Yu Q, Yang X, Guo K, Zhang Y, Zhang Y, Zhang J, Li J, Chen J, Deng H, Xian T, Wang X, Wu J, Zhang K. Controllable Synthesis of Narrow-Gap van der Waals Semiconductor Nb 2GeTe 4 with Asymmetric Architecture for Ultrafast Photonics. ACS NANO 2022; 16:4239-4250. [PMID: 35191693 DOI: 10.1021/acsnano.1c10241] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultrafast photonics has become an interdisciplinary topic of great consequence due to the spectacular progress of compact and efficient ultrafast pulse generation. Wide spectrum bandwidth is the key element for ultrafast pulse generation due to the Fourier transform limitation. Herein, monoclinic Nb2GeTe4, an emerging class of ternary narrow-gap semiconductors, was used as a real saturable absorber (SA), which manifests superior wide-range optical absorption. The crystallization form and growth mechanism of Nb2GeTe4 were revealed by a thermodynamic phase diagram. Furthermore, the Nb2GeTe4-SA showed reliable saturation intensity and larger modulation depth, ascribed to a built-in electric field driven by the asymmetric crystal architecture confirmed via X-ray diffraction, polarized Raman spectra, and scanning transmission electron microscopy. Based on the Nb2GeTe4-SA, femtosecond mode-locked operation with good overall performance was achieved by a properly designed ring cavity. These results suggest that Nb2GeTe4 shows great promise for ultrafast photonic applications and arouse interests in exploring the intriguing properties of the ternary van der Waals material family.
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Affiliation(s)
- Yongping Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Xiaoxin Yang
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Shanghai IC R&D Center, Shanghai 201210, China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
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7
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Yu Q, Wang S, Zhang Y, Dong Z, Deng H, Guo K, Wang T, Shi X, Liu F, Xian T, Zhu S, Wu J, Zhang Z, Zhang K, Zhan L. Femtosecond ultrafast pulse generation with high-quality 2H-TaS 2 nanosheets via top-down empirical approach. NANOSCALE 2021; 13:20471-20480. [PMID: 34851329 DOI: 10.1039/d1nr07075d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tantalum disulfide (TaS2), an emerging group VB transition metal dichalcogenide, with unique layered structure, rich phase diagrams, metallic behavior, higher carrier concentration and mobility is emerging as a prototype for revealing basic physical phenomena and developing practical applications. However, its photonics properties and even engineering-related processes are still rare. Here, the top-down experiment demonstration, including synthesis, thickness optimization and nonlinear optical application, has been reported. In addition, the ultrafast (∼373 fs) erbium-doped fiber pulse with a small time-bandwidth product (∼0.34) and long-term stability (∼25 days) was realized using the nonlinear absorption properties of the high-quality 2H-TaS2 nanosheet. These results suggest an experimental route for further ultrafast photonics exploration based on metallic transition metal dichalcogenides.
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Affiliation(s)
- Qiang Yu
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Shun Wang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China
| | - Yan Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Zhuo Dong
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Xinyao Shi
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Fangqi Liu
- College of Science and Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Tianhao Xian
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Sicong Zhu
- College of Science and Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
| | - Ziyang Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Kai Zhang
- i-Lab & Key Laboratory of Nanodevices and Applications & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
| | - Li Zhan
- State Key Laboratory of Advanced Optical Communication System and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
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