1
|
Xu Y, Qi J, Ma C, He Q. Wet-Chemical Synthesis of Elemental 2D Materials. Chem Asian J 2024; 19:e202301152. [PMID: 38469659 DOI: 10.1002/asia.202301152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/13/2024]
Abstract
Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.
Collapse
Affiliation(s)
- Yue Xu
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Junlei Qi
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Cong Ma
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Qiyuan He
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| |
Collapse
|
2
|
Fickert M, Martinez-Haya R, Ruiz AM, Baldoví JJ, Abellán G. Exploring the effect of the covalent functionalization in graphene-antimonene heterostructures. RSC Adv 2024; 14:13758-13768. [PMID: 38681835 PMCID: PMC11046379 DOI: 10.1039/d4ra01029a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 03/24/2024] [Indexed: 05/01/2024] Open
Abstract
The growing field of two-dimensional (2D) materials has recently witnessed the emergence of heterostructures, however those combining monoelemental layered materials remain relatively unexplored. In this study, we present the chemical fabrication and characterization of a heterostructure formed by graphene and hexagonal antimonene. The interaction between these 2D materials is thoroughly examined through Raman spectroscopy and first-principles calculations, revealing that this can be considered as a van der Waals heterostructure. Furthermore, we have explored the influence of the antimonene 2D material on the reactivity of graphene by studying the laser-induced covalent functionalization of the graphene surface. Our findings indicate distinct degrees of functionalization based on the underlying material, SiO2 being more reactive than antimonene, opening the door for the development of controlled patterning in devices based on these heterostructures. This covalent functionalization implies a high control over the chemical information that can be stored but also removed on graphene surfaces, and its use as a patterned heterostructure based on antimonene and graphene. This research provides valuable insights into the antimonene-graphene interactions and their impact on the chemical reactivity during graphene covalent functionalization.
Collapse
Affiliation(s)
- M Fickert
- Department of Chemistry and Pharmacy, Joint Institute of Advanced Materials and Processes (ZMP), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) Fürth 90762 Germany
| | - R Martinez-Haya
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - A M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - J J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - G Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| |
Collapse
|
3
|
Khang ND, Nguyen CQ, Duc LM, Nguyen CV. First-principles investigation of a type-II BP/Sc 2CF 2 van der Waals heterostructure for photovoltaic solar cells. NANOSCALE ADVANCES 2023; 5:2583-2589. [PMID: 37143808 PMCID: PMC10153482 DOI: 10.1039/d3na00082f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Accepted: 03/28/2023] [Indexed: 05/06/2023]
Abstract
Constructing heterostructures has proven to be an effective strategy to manipulate the electronic properties and enlarge the application possibilities of two-dimensional (2D) materials. In this work, we perform first-principles calculations to generate the heterostructure between boron phosphide (BP) and Sc2CF2 materials. The electronic characteristics and band alignment of the combined BP/Sc2CF2 heterostructure, as well as the effects of an applied electric field and interlayer coupling, are examined. Our results predict that the BP/Sc2CF2 heterostructure is energetically, thermally and dynamically stable. All considered stacking patterns of the BP/Sc2CF2 heterostructure possess semiconducting behavior. Furthermore, the formation of the BP/Sc2CF2 heterostructure gives rise to the generation of type-II band alignment, which causes photogenerated electrons and holes to move in opposite ways. Therefore, the type-II BP/Sc2CF2 heterostructure could be a promising candidate for photovoltaic solar cells. More interestingly, the electronic properties and band alignment in the BP/Sc2CF2 heterostructure can be tuned by applying an electric field and modifying the interlayer coupling. Applying an electric field not only causes modulation of the band gap, but also leads to the transition from a semiconductor to a gapless semiconductor and from type-II to type-I band alignment of the BP/Sc2CF2 heterostructure. In addition, changing the interlayer coupling gives rise to modulation of the band gap of the BP/Sc2CF2 heterostructure. Our findings suggest that the BP/Sc2CF2 heterostructure is a promising candidate for photovoltaic solar cells.
Collapse
Affiliation(s)
- Nguyen Dang Khang
- Faculty of Electrical Engineering, Hanoi University of Industry Hanoi 100000 Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Le M Duc
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam
| |
Collapse
|
4
|
Xing F, Ji G, Li Z, Zhong W, Wang F, Liu Z, Xin W, Tian J. Preparation, properties and applications of two-dimensional superlattices. MATERIALS HORIZONS 2023; 10:722-744. [PMID: 36562255 DOI: 10.1039/d2mh01206e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.
Collapse
Affiliation(s)
- Fei Xing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Guangmin Ji
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Zongwen Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Feiyue Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhibo Liu
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Jianguo Tian
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| |
Collapse
|
5
|
Su J, Li X, Xu M, Zhang J, Liu X, Zheng X, Shi Y, Zhang Q. Enhancing Photodetection Ability of MoS 2 Nanoscrolls via Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3307-3316. [PMID: 36596237 DOI: 10.1021/acsami.2c18537] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (Rhybrid = 73.9 A/W vs Ronly = 1.1 A/W and R2D = 1.5 A/W at 470 nm, 0.58 mW·cm-2), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
Collapse
Affiliation(s)
- Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Jian Zhang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xiaolian Liu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| |
Collapse
|
6
|
Ham J, Lim J, Hong S, Lee WC. Spin Coating Promotes the Epitaxial Growth of AgCN Microwires on 2D Materials. ACS NANO 2022; 16:20521-20532. [PMID: 36475627 DOI: 10.1021/acsnano.2c06963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Epitaxial growth of inorganic crystals on 2D materials is expected to greatly advance nanodevices and nanocomposites. However, because pristine surfaces of 2D materials are chemically inert, it is difficult to grow inorganic crystals epitaxially on 2D materials. Previously, successful results were achieved only by vapor-phase deposition at high temperature, and solution-based deposition including spin coating made the epitaxial growth unaligned, sparse, or nonuniform on 2D materials. Here, we show that solvent-controlled spin coating can uniformly deposit a dense layer of epitaxial AgCN microwires onto various 2D materials. Adding ethanol to an aqueous AgCN solution facilitates uniform formation of the thin supersaturated solution layer during spin coating, which promotes heterogeneous crystal nucleation on 2D material surfaces over homogeneous nucleation in the bulk solution. Microscopic analysis confirms highly aligned, uniform, and dense growth of epitaxial AgCN microwires on graphene, MoS2, hBN, WS2, and WSe2. The epitaxial microwires, which are optically observable and chemically removable, enable crystallographic mapping of grains in millimeter-sized polycrystalline graphene as well as precise control of twist angles (<∼1°) in van der Waals heterostructures. In addition to these practical applications, our study demonstrates the potential of 2D materials as epitaxial templates even in spin coating of inorganic crystals.
Collapse
Affiliation(s)
- Jimin Ham
- Department of Mechanical Engineering, BK21FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi15588, Republic of Korea
| | - Jaemook Lim
- Department of Mechanical Engineering, BK21FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi15588, Republic of Korea
| | - Sukjoon Hong
- Department of Mechanical Engineering, BK21FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi15588, Republic of Korea
| | - Won Chul Lee
- Department of Mechanical Engineering, BK21FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi15588, Republic of Korea
| |
Collapse
|
7
|
Zhang X, Zhang Y, Yu H, Zhao H, Cao Z, Zhang Z, Zhang Y. Van der Waals-Interface-Dominated All-2D Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2207966. [PMID: 36353883 DOI: 10.1002/adma.202207966] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 11/06/2022] [Indexed: 06/16/2023]
Abstract
The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.
Collapse
Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yanzhe Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Hang Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhihong Cao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| |
Collapse
|
8
|
Lei P, Li Y, Song X, Hao Y, Deng Z. DNA‐Programmable AgAuS‐Primed Conductive Nanowelding Wires‐Up Wet Colloids. Angew Chem Int Ed Engl 2022; 61:e202203568. [DOI: 10.1002/anie.202203568] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Indexed: 12/11/2022]
Affiliation(s)
- Pengcheng Lei
- Center for Bioanalytical Chemistry Department of Chemistry University of Science and Technology of China Hefei Anhui 230026 China
| | - Yanjuan Li
- Center for Bioanalytical Chemistry Department of Chemistry University of Science and Technology of China Hefei Anhui 230026 China
| | - Xiaojun Song
- Center for Bioanalytical Chemistry Department of Chemistry University of Science and Technology of China Hefei Anhui 230026 China
| | - Yan Hao
- Center for Bioanalytical Chemistry Department of Chemistry University of Science and Technology of China Hefei Anhui 230026 China
| | - Zhaoxiang Deng
- Center for Bioanalytical Chemistry Department of Chemistry University of Science and Technology of China Hefei Anhui 230026 China
| |
Collapse
|
9
|
Vu VT, Phan TL, Vu TTH, Park MH, Do VD, Bui VQ, Kim K, Lee YH, Yu WJ. Synthesis of a Selectively Nb-Doped WS 2-MoS 2 Lateral Heterostructure for a High-Detectivity PN Photodiode. ACS NANO 2022; 16:12073-12082. [PMID: 35913119 DOI: 10.1021/acsnano.2c02242] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed. The different chemical activity reactivity (MoO3 > WO3 > Nb2O5) enable the separation of the growth temperature of intrinsic MoS2 to 700 °C (first grown inner layer) and Nb-doped WS2 to 800 °C (second grown outer layer). By controlling the Nb/(W+Nb) molar ratio in the solution precursor, the hole carrier density in the p-type WS2 layer is selectively controlled from approximately 1.87 × 107/cm2 at 1.5 at.% Nb to approximately 1.16 × 1013/cm2 at 8.1 at.% Nb, while the electron carrier density in n-type MoS2 shows negligible change with variation of the Nb molar ratio. As a result, the electrical behavior of the WS2-MoS2 heterostructure transforms from the N-N junction (0 at.% Nb) to the P-N junction (4.5 at.% Nb) and the P-N tunnel junction (8.1 at.% Nb). The band-to-band tunneling at the P-N tunnel junction (8.1 at.% Nb) is eliminated by applying negative gate bias, resulting in a maximum rectification ratio (105) and a minimum channel resistance (108 Ω). With this optimized photodiode (8.1 at.% Nb at Vg = -30 V), an Iphoto/Idark ratio of 6000 and a detectivity of 1.1 × 1014 Jones are achieved, which are approximately 20 and 3 times higher, respectively, than the previously reported highest values for CVD-grown transition-metal dichalcogenide P-N junctions.
Collapse
Affiliation(s)
- Van Tu Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thanh Luan Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Thanh Huong Vu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mi Hyang Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Van Dam Do
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Viet Quoc Bui
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kunnyun Kim
- Korea Electronics Technology Institute, Seongnam, 13509, Republic of Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| |
Collapse
|
10
|
Lei P, Li Y, Song X, Hao Y, Deng Z. DNA‐Programmable AgAuS‐Primed Conductive Nanowelding Wires up Wet Colloids. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202203568] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Pengcheng Lei
- University of Science and Technology of China Department of Chemistry CHINA
| | - Yanjuan Li
- University of Science and Technology of China Department of Chemistry CHINA
| | - Xiaojun Song
- University of Science and Technology of China Department of Chemistry CHINA
| | - Yan Hao
- University of Science and Technology of China Department of Chemistry CHINA
| | - Zhaoxiang Deng
- University of Science and Technology of China Department of Chemistry 96 Jinzhai Road 230026 Hefei CHINA
| |
Collapse
|
11
|
Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
Collapse
Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| |
Collapse
|