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Jiang W, Lee S, Zan G, Zhao K, Park C. Alternating Current Electroluminescence for Human-Interactive Sensing Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304053. [PMID: 37696051 DOI: 10.1002/adma.202304053] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 09/04/2023] [Indexed: 09/13/2023]
Abstract
The development of stimuli-interactive displays based on alternating current (AC)-driven electroluminescence (EL) is of great interest, owing to their simple device architectures suitable for wearable applications requiring resilient mechanical flexibility and stretchability. AC-EL displays can serve as emerging platforms for various human-interactive sensing displays (HISDs) where human information is electrically detected and directly visualized using EL, promoting the development of the interaction of human-machine technologies. This review provides a holistic overview of the latest developments in AC-EL displays with an emphasis on their applications for HISDs. AC-EL displays based on exciton recombination or impact excitations of hot electrons are classified into four representative groups depending upon their device architecture: 1) displays without insulating layers, 2) displays with single insulating layers, 3) displays with double insulating layers, and 4) displays with EL materials embedded in an insulating matrix. State-of-the-art AC HISDs are discussed. Furthermore, emerging stimuli-interactive AC-EL displays are described, followed by a discussion of scientific and engineering challenges and perspectives for future stimuli-interactive AC-EL displays serving as photo-electronic human-machine interfaces.
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Affiliation(s)
- Wei Jiang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Seokyeong Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Guangtao Zan
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Kaiying Zhao
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea
- Spin Convergence Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
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Liu T, Fu Q, Li Y, Han X, Wang S, Taniguchi T, Watanabe K, Wan D, Zhang Q, Zhao Y, Ni Z, Ding F, Hu Z, Yuan X, Lu J. Silver nanoparticle-induced enhancement of light extraction in two-dimensional light-emitting diodes. OPTICS LETTERS 2023; 48:4372-4375. [PMID: 37582035 DOI: 10.1364/ol.498850] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 07/26/2023] [Indexed: 08/17/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with direct bandgaps are considered promising candidates for building light-emitting diodes (LEDs). One crucial indicator of their performance is the brightness of electroluminescence (EL). In this study, we fabricate WS2-based LEDs that make full use of the assistance of effective transient-mode charge injection. By introducing self-assembled silver nanoparticles (NPs) on top of the LED, the extraction efficiency is significantly improved, with a 2.9-fold EL enhancement observed in the experiment. Full-wave simulations further confirm that the improvement comes from the scattering capability of silver NPs, with results qualitatively fitting the experiment. This approach, with its compatibility with van der Waals heterostructures, can be further promoted to enhance the brightness of 2D monolayer TMDC-based LEDs.
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Wang V, Uddin SZ, Park J, Javey A. Highly multicolored light-emitting arrays for compressive spectroscopy. SCIENCE ADVANCES 2023; 9:eadg1607. [PMID: 37075124 PMCID: PMC10115405 DOI: 10.1126/sciadv.adg1607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Miniaturized, multicolored light-emitting device arrays are promising for applications in sensing, imaging, computing, and more, but the range of emission colors achievable by a conventional light-emitting diode is limited by material or device constraints. In this work, we demonstrate a highly multicolored light-emitting array with 49 different, individually addressable colors on a single chip. The array consists of pulsed-driven metal-oxide-semiconductor capacitors, which generate electroluminescence from microdispensed materials spanning a diverse range of colors and spectral shapes, enabling facile generation of arbitrary light spectra across a broad wavelength range (400 to 1400 nm). When combined with compressive reconstruction algorithms, these arrays can be used to perform spectroscopic measurements in a compact manner without diffractive optics. As an example, we demonstrate microscale spectral imaging of samples using a multiplexed electroluminescent array in conjunction with a monochrome camera.
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Affiliation(s)
- Vivian Wang
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Junho Park
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Corresponding author.
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Chang YH, Lin YS, James Singh K, Lin HT, Chang CY, Chen ZZ, Zhang YW, Lin SY, Kuo HC, Shih MH. AC-driven multicolor electroluminescence from a hybrid WSe 2 monolayer/AlGaInP quantum well light-emitting device. NANOSCALE 2023; 15:1347-1356. [PMID: 36562246 DOI: 10.1039/d2nr03725d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.
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Affiliation(s)
- Ya-Hui Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Shou Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Konthoujam James Singh
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Hsiang-Ting Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
| | - Chiao-Yun Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202301, Taiwan
| | - Zheng-Zhe Chen
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Physics, National Taiwan University, Taipei, Taiwan, Taipei 10617, Taiwan
| | - Yu-Wei Zhang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Shih-Yen Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Chung Kuo
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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Saengsonachai A, Seekaew Y, Traiwatcharanon P, Wongchoosuk C. Dual functions of alternating current electroluminescent device for light emission and humidity detection. NANOTECHNOLOGY 2022; 33:405202. [PMID: 35767930 DOI: 10.1088/1361-6528/ac7cf5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Accepted: 06/29/2022] [Indexed: 06/15/2023]
Abstract
Alternating current electroluminescent (AC-EL) device can be considered as a potential candidate for next generation of multifunctional light-emitting sources. In this work, we present a new design of AC-EL device with inclusion of a silver oxide humidity-sensing layer instead of an insulating buffer layer for humidity detection. The ZnS:Cu, Cl and ZnS:Ag+(Zn,Cd)S:Ag phosphors were used as an emissive layer prepared by screen printing method. The silver oxide (AgO/Ag2O) nanoparticles synthesized via a green method were employed as a humidity sensing layer. The developed AC-EL devices exhibited high response, good productivity, high stability, high repeatability and linear relationship with humidity in range of 10%-90% RH as well as no significant effects with several VOCs/gases such as NH3, CO2, acetone, methanol, toluene and propan at room temperature. The effects of parameters such as excitation frequency, applied voltage, and waveforms on the luminance intensity are discussed. The development of the present AC-EL device offers a simplified architecture to enable sensing functions of the AC-EL device via monitoring of light emission changing.
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Affiliation(s)
- Alisa Saengsonachai
- Department of Physics, Faculty of Science, Kasetsart University, Chatuchak, Bangkok 10900, Thailand
| | - Yotsarayuth Seekaew
- Department of Physics, Faculty of Science, Ramkhamhaeng University, Bang Kapi, Bangkok 10240, Thailand
| | | | - Chatchawal Wongchoosuk
- Department of Physics, Faculty of Science, Kasetsart University, Chatuchak, Bangkok 10900, Thailand
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Li Y, Dai X, Bu Y, Zhang H, Liu J, Yuan W, Guo X, Ao JP. Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200454. [PMID: 35363421 DOI: 10.1002/smll.202200454] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 03/12/2022] [Indexed: 06/14/2023]
Abstract
Surface passivation of the photoelectrode by wide bandgap semiconductor quantum layer is an important strategy to improve work stability and surface state inhibition. However, an inevitable energy barrier is generated during the quantum tunneling process of the photocarriers. To overcome this shortage, a tandem photo-generated hole transfer route is fabricated on BiVO4 photoanode by doped dual-quantum layers modification, Ni-ZnO (5 nm) and Rh-SrTiO3 (≈10 nm). Modulated photoelectrochemical (PEC), Scanning Kelvin Probe (SKP), and DFT calculation method results indicate that a tandem hole ohmic contact route is formed in the photoanode to reduce the quantum tunneling energy barrier, meanwhile, the photon absorption capacity of BiVO4 is improved after doped quantum layers modification. Both a phenomenal attribute to the energy band hybridization between Ni, Rh 3d orbits in quantum layers with BiVO4 photoanode. Then, the modified BiVO4 photoanode achieves the recoded photocurrent density of 6.47 and 5.18 mA cm-2 (Na2 SO3 electrolyte, VRHE = 1.23 V) under simulated sun light (100 mW cm-2 AM 1.5 G) by xenon lamp illumination without and with UV composition cutting down to ≈5%, respectively. Generally, this work will highlight a potential application in the fields of PEC water splitting and photovoltaic conversion for various semiconductor nanomaterials.
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Affiliation(s)
- Yang Li
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Xianying Dai
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Yuyu Bu
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Hanzhi Zhang
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Jie Liu
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Wenyu Yuan
- Key Laboratory of Macromolecular Science of Shaanxi Province, Key Laboratory of Applied Surface and Colloid Chemistry, School of Chemistry & Chemical Engineering, Shannxi Normal University, Xi'an, 710062, China
| | - Xiaohui Guo
- Key Laboratory of Synthetic and Natural Functional Molecule of the Ministry of Education, The College of Chemistry and Materials Science, Northwest University, Xi'an, 710061, China
| | - Jin-Ping Ao
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China
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