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Cheng WN, Niu M, Meng Y, Han X, Qiao J, Zhang J, Zhao X. Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide. NANO LETTERS 2024; 24:6441-6449. [PMID: 38757836 DOI: 10.1021/acs.nanolett.4c01771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS2 consecutively transform into metastable ABC stacking, resulting in unique 3a × 1a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.
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Affiliation(s)
- Wing Ni Cheng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Niu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Meng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jingsi Qiao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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2
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Zhang T, Li R, Hao X, Zhang Q, Yang H, Hou Y, Hou B, Jia L, Jiang K, Zhang Y, Wu X, Zhuang X, Liu L, Yao Y, Guo W, Wang Y. Ullmann-Like Covalent Bond Coupling without Participation of Metal Atoms. ACS NANO 2023; 17:4387-4395. [PMID: 36802507 DOI: 10.1021/acsnano.2c09467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Ullmann-like on-surface synthesis is one of the most appropriate approaches for the bottom-up fabrication of covalent organic nanostructures and many successes have been achieved. The Ullmann reaction requires the oxidative addition of a catalyst (a metal atom in most cases): the metal atom will insert into a carbon-halogen bond, forming organometallic intermediates, which are then reductively eliminated and form C-C covalent bonds. As a result, traditional Ullmann coupling involves reactions of multiple steps, making it difficult to control the final product. Moreover, forming the organometallic intermediates will potentially poison the metal surface catalytic reactivity. In the study, we used the 2D hBN, an atomically thin sp2-hybridized sheet with a large band gap, to protect the Rh(111) metal surface. It is an ideal 2D platform to decouple the molecular precursor from the Rh(111) surface while maintaining the reactivity of Rh(111). We realize an Ullmann-like coupling of a planar biphenylene-based molecule, i.e., 1,8-dibromobiphenylene (BPBr2), on an hBN/Rh(111) surface with an ultrahigh selectivity of the biphenylene dimer product, containing 4-, 6-, and 8-membered rings. The reaction mechanism, including electron wave penetration and the template effect of the hBN, is elucidated by combining low-temperature scanning tunneling microscopy and density functional theory calculations. Our findings are expected to play an essential role regarding the high-yield fabrication of functional nanostructures for future information devices.
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Affiliation(s)
- Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Renyi Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoyu Hao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Quanzhen Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yanhui Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Baofei Hou
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Liangguang Jia
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Kaiyue Jiang
- The Meso-Entropy Matter Lab., The State Key Laboratory of Metal Matrix Composites, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Yu Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xu Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaodong Zhuang
- The Meso-Entropy Matter Lab., The State Key Laboratory of Metal Matrix Composites, Shanghai Key Laboratory of Electrical Insulation and Thermal Ageing, School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Liwei Liu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Wei Guo
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Frontiers Science Center for High Energy Material (MOE), State Key Laboratory of Explosion Science and Technology, School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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Qu Z, Sugawara Y, Li Y. Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:185001. [PMID: 36848678 DOI: 10.1088/1361-648x/acbf93] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Accepted: 02/27/2023] [Indexed: 06/18/2023]
Abstract
Studies of the physics underlying carrier transport characteristics and band bending of semiconductors are critical for developing new types of devices. In this work, we investigated the physical properties of Co ring-like cluster (RC) reconstruction with a low Co coverage on a Si(111)-7 × 7 surface at atomic resolution by atomic force microscopy/Kelvin probe force microscopy at 78 K. We compared the applied bias dependence of frequency shift between two types of structure: Si(111)-7 × 7 and Co-RC reconstructions. As a result, the accumulation, depletion, and reversion layers were identified in the Co-RC reconstruction by bias spectroscopy. For the first time, we found that Co-RC reconstruction on the Si(111)-7 × 7 surface shows semiconductor properties by Kelvin probe force spectroscopy. The findings of this study are useful for developing new materials for semiconductor devices.
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Affiliation(s)
- Zhang Qu
- Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Yasuhiro Sugawara
- Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Yanjun Li
- Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Zhang H, Yan C, Ge Z, Weinert M, Li L. Impenetrable Barrier at the Metal-Mott Insulator Junction in Polymorphic 1H and 1T NbSe 2 Lateral Heterostructure. J Phys Chem Lett 2022; 13:10713-10721. [PMID: 36367815 DOI: 10.1021/acs.jpclett.2c02546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
When a metal makes contact with a band insulator, charge transfer occurs across the interface leading to band bending and a Schottky barrier with rectifying behavior. The nature of metal-Mott insulator junctions, however, is still debated due to challenges in experimental probes of such vertical heterojunctions with buried interfaces. Here, we grow lateral polymorphic heterostructures of single-layer metallic 1H and Mott insulating 1T NbSe2 by molecular beam epitaxy. We find a one-dimensional metallic channel along the interface due to the appearance of quasiparticle states with an intensity decay following 1/x2, indicating an impenetrable barrier. Near the interface, the Mott gap exhibits a strong spatial dependence arising from the difference in lattice constants between the two phases, consistent with our density functional theory calculations. These results provide clear experimental evidence for an impenetrable barrier at the metal-Mott insulator junction and the high tunability of a Mott insulator by strain.
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Affiliation(s)
- Huimin Zhang
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024, China
| | - Chenhui Yan
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
| | - Zhuozhi Ge
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
| | - Michael Weinert
- Department of Physics, University of Wisconsin, Milwaukee, Wisconsin 53201, United States
| | - Lian Li
- Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States
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Atomic-scale visualization of chiral charge density wave superlattices and their reversible switching. Nat Commun 2022; 13:1843. [PMID: 35383190 PMCID: PMC8983771 DOI: 10.1038/s41467-022-29548-2] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2021] [Accepted: 03/16/2022] [Indexed: 11/08/2022] Open
Abstract
Chirality is essential for various phenomena in life and matter. However, chirality and its switching in electronic superlattices, such as charge density wave (CDW) superlattices, remain elusive. In this study, we characterize the chirality switching with atom-resolution imaging in a single-layer NbSe2 CDW superlattice by the technique of scanning tunneling microscopy. The atomic arrangement of the CDW superlattice is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, the switching is reversibly realized with an external electric field. Our findings unveil the delicate switching process of chiral CDW superlattice in a two-dimensional (2D) crystal down to the atomic scale.
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Huang Z, Song X, Chen Y, Yang H, Yuan P, Ma H, Qiao J, Zhang Y, Sun J, Zhang T, Huang Y, Liu L, Gao HJ, Wang Y. Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe 2 Hetero/Homophase Junctions. J Phys Chem Lett 2022; 13:1901-1907. [PMID: 35179388 DOI: 10.1021/acs.jpclett.1c04138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Controlling charge-density-wave (CDW) orders in two-dimensional (2D) crystals has attracted a great deal of interest because of their fundamental physics and their demand inse in miniaturized devices. In this work, we systematically studied the size-dependent CDW orders in single-layer hetero/homo-NbSe2 stacking junctions. We found that the CDW orders in the top 1T-NbSe2 layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe2 heterojunction, the critical lateral size of 1T-NbSe2 islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt. However, for the 1T/1T-NbSe2 homojunction, the CDW orders in the islands can persist even with a lateral size of <11 nm. Our findings illuminate the fresh phenomenon of size-dependent CDW orders existing in 2D van der Waals hetero/homojunctions and provide useful information for the control of CDW orders.
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Affiliation(s)
- Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Peiwen Yuan
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hang Ma
- School of Automation, Beijing Information Science and Technology University, Beijing 100085, China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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Zhang Q, Zhang Y, Hou Y, Xu R, Jia L, Huang Z, Hao X, Zhou J, Zhang T, Liu L, Xu Y, Gao HJ, Wang Y. Nanoscale Control of One-Dimensional Confined States in Strongly Correlated Homojunctions. NANO LETTERS 2022; 22:1190-1197. [PMID: 35043640 DOI: 10.1021/acs.nanolett.1c04363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Construction of lateral junctions is essential to generate one-dimensional (1D) confined potentials that can effectively trap quasiparticles. A series of remarkable electronic phases in one dimension, such as Wigner crystallization, are expected to be realized in such junctions. Here, we demonstrate that we can precisely tune the 1D-confined potential with an in situ manipulation technique, thus providing a dynamic way to modify the correlated electronic states at the junctions. We confirm the existence of 1D-confined potential at the homojunction of two single-layer 1T-NbSe2 islands. Such potential is structurally sensitive and shows a nonmonotonic function of their interspacing. Moreover, there is a change of electronic properties from the correlated insulator to the generalized 1D Wigner crystallization while the confinement becomes strong. Our findings not only establish the capability to fabricate structures with dynamically tunable properties, but also pave the way toward more exotic correlated systems in low dimensions.
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Affiliation(s)
- Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yanhui Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Runzhang Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyu Hao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiadong Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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Yang H, Zhang T, Huang Z, Chen Y, Song X, Hao X, Yang H, Wu X, Zhang Y, Liu L, Gao HJ, Wang Y. Visualization of Charge-Density-Wave Reconstruction and Electronic Superstructure at the Edge of Correlated Insulator 1T-NbSe 2. ACS NANO 2022; 16:1332-1338. [PMID: 34941258 DOI: 10.1021/acsnano.1c09249] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Edges of low-dimensional quantum systems have profound effects on both fundamental research and device functionality. Real-space investigation of the microscopic edge structures and understanding the edge-modulated electronic properties are of great essence. Here we report the nanoscale structural reconstruction at the atomically sharp edge of a charge-density-wave (CDW) correlated insulator 1T-NbSe2 and the induced electronic properties. We find the CDW unit cells at the edge of single layer (SL) 1T-NbSe2 evolve from the well-defined CDW order in bulk and spontaneously reconstruct into the quartet along the edge. Moreover, we capture an anomalous electronic superstructure along the edge, the periodicity of which is four times that of ordinary CDW lattice. Our findings provide a way to design the one-dimensional electronic superstructure in 2D quantum materials.
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Affiliation(s)
- Han Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Zeping Huang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyu Hao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Huixia Yang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Yu Zhang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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