Experimental and Theoretical Study of Possible Collective Electronic States in Exfoliable Re-Doped NbS2

Theoretical study of CDW phases for bulk NbX2 (X = S and Se)

In most two-dimensional transition metal chalcogenides, the superconducting phase coexists with the charge density wave (CDW) phase. There exists at least one case, i.e. bulk 2H-NbS2, that does not conform to this picture. Scientists have shown great interest in trying to experimentally find the CDW phase of bulk NbS2 since 1975. Is there any theoretically more stable thermodynamic state than its higher-temperature metal phase, especially in the case of charge injection? Theoretically more stable CDW bulk configurations (TC for 2H-NbS2 and TTs for 2H-NbSe2) with partial pseudo energy gaps were predicted through the harmonic phonon softening theory and first-principles calculations. The ratios of larger to smaller pseudo gaps around K-H segment in the Brillouin zone for CDW phases are basically equal to those of superconductivity phases for bulk 2H-NbX2 (X = S and Se). The CDW phase should coexist with its superconductor state below the critical temperature rather than the metal phase for bulk 2H-NbS2. The presence of CDW phase should be more easily observed experimentally when the injected charge reaches 0.5e/Nb18S36 for bulk 2H-NbS2. Our calculations of density of state (DOS) indicated that, during Nb atoms contracting to form the CDW phases with symmetry breaking in the in-plane direction, dominant conductive carriers are always of p-type for bulk 2H-NbS2 while the alternation of carrier type from p-type to n-type occurs for bulk 2H-NbSe2. The Fermi level continuously drops and then the M-L segment of the out-of-plane energy band emerges from the Fermi surface, which corresponds to the reversal of p-n type sign. Lifshitz transition of pocket-vanishing types occurs in the out-of-plane direction without symmetry breaking during the geometrical structural phase transition for bulk 2H-NbSe2. Our calculations have theoretically addressed the long-standing coexistence issue of CDW and superconducting phases.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Organic self-assembled monolayers on superconducting NbSe2: interfacial electronic structure and energetics

While organic self-assembled monolayers (SAMs) have been widely used to modify the work function of metal and metal-oxide surfaces, their application to tune the critical temperature of a superconductor has only been considered recently when SAMs were deposited on NbSe₂monolayers (Calavalle et al 2021Nano Lett.21136-143). Here, we describe the results of density functional theory calculations performed on the experimentally reported organic/NbSe₂systems. Our objectives are: (i) to determine how the organic layers impact the NbSe₂work function and electronic density of states; (ii) to understand the possible correlation with the experimental variations in superconducting behavior upon SAM deposition. We find that, upon adsorption of the organic monolayers, the work-function modulation induced by the SAM and interface dipoles is consistent with the experimental results. However, there occurs no significant difference in the electronic density of states near the Fermi level, a consequence of the absence of any charge transfer across the organic/NbSe₂interfaces. Therefore, our results indicate that it is not a SAM-induced tuning of the NbSe₂density of states near the Fermi level that leads to the tuning of the superconducting critical temperature. This calls for further explorations, both experimentally and theoretically, of the mechanism underlying the superconducting critical temperature variation upon formation of SAM/NbSe₂interfaces.

Targeting One- and Two-Dimensional Ta-Te Structures via Nanotube Encapsulation

Fine control over material synthesis on the nanoscale can facilitate the stabilization of competing crystalline structures. Here, we demonstrate how carbon nanotube reaction vessels can be used to selectively create one-dimensional TaTe₃ chains or two-dimensional TaTe₂ nanoribbons with exquisite control of the chain number or nanoribbon thickness and width. Transmission electron microscopy and scanning transmission electron microscopy reveal the detailed atomic structure of the encapsulated materials. Complex superstructures such as multichain spiraling and apparent multilayer moirés are observed. The rare 2H phase of TaTe₂ (1H in monolayer) is found to be abundant as an encapsulated nanoribbon inside carbon nanotubes. The experimental results are complemented by density functional theory calculations for the atomic and electronic structure, which uncovers the prevalence of 2H-TaTe₂ due to nanotube-to-nanoribbon charge transfer and size confinement. Calculations also reveal new 1T' type charge density wave phases in TaTe₂ that could be observed in experimental studies.