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Mao X, Yang Y, Yang L, Qian H, Li W, Zhao W, Deng S, Jin S, Jiang L, Liu C, Li W, Yi M, Deng R, Zhu J. Orthogonal printing of uniform nanocomposite monolayer and oriented organic semiconductor crystals for high-performance nano-crystal floating gate memory. J Colloid Interface Sci 2024; 668:232-242. [PMID: 38677212 DOI: 10.1016/j.jcis.2024.04.160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 04/19/2024] [Accepted: 04/22/2024] [Indexed: 04/29/2024]
Abstract
Inkjet printing is of great interest in the preparation of optoelectronic and microelectronic devices due to its low cost, low process temperature, versatile material compatibility, and ability to precisely manufacture multi-layer devices on demand. However, interlayer solvent erosion is a typical problem that limits the printing of organic semiconductor devices with multi-layer structures. In this study, we proposed a solution to address this erosion problem by designing polystyrene-block-poly(4-vinyl pyridine)-grafted Au nanoparticles (Au@PS-b-P4VP NPs). With a colloidal ink containing the Au@PS-b-P4VP NPs, we obtained a uniform monolayer of Au nano-crystal floating gates (NCFGs) embedded in the PS-b-P4VP tunneling dielectric (TD) layer using direct-ink-writing (DIW). Significantly, PS-b-P4VP has high erosion resistance against the semiconductor ink solvent, which enables multi-layer printing. An active layer of semiconductor crystals with high crystallinity and well-orientation was obtained by DIW. Moreover, we developed a strategy to improve the quality of the TD/semiconductor interface by introducing a polystyrene intermediate layer. We show that the NCFG memory devices exhibit a low threshold voltage (<3 V), large memory window (66 V), stable endurance (>100 cycles), and long-term retention (>10 years). This study provides universal guidance for printing functional coatings and multi-layer devices.
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Affiliation(s)
- Xi Mao
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Yonghao Yang
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Lisong Yang
- Department of Chemistry, Durham University, Stockholm Road, Durham DH1 3LE, UK
| | - Haowen Qian
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Wang Li
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Wenqi Zhao
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Shuai Deng
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Shaohong Jin
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Liangzhu Jiang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Changxu Liu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Wen Li
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China.
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications (NUPT), Nanjing 210023, China
| | - Renhua Deng
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
| | - Jintao Zhu
- Key Laboratory of Material Chemistry for Energy Conversion and Storage of Ministry of Education (HUST), and State Key Laboratory of Materials Processing and Die & Mold Technology, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China.
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Zhao X, Zou H, Wang M, Wang J, Wang T, Wang L, Chen X. Conformal Neuromorphic Bioelectronics for Sense Digitalization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403444. [PMID: 38934554 DOI: 10.1002/adma.202403444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Revised: 06/03/2024] [Indexed: 06/28/2024]
Abstract
Sense digitalization, the process of transforming sensory experiences into digital data, is an emerging research frontier that links the physical world with human perception and interaction. Inspired by the adaptability, fault tolerance, robustness, and energy efficiency of biological senses, this field drives the development of numerous innovative digitalization techniques. Neuromorphic bioelectronics, characterized by biomimetic adaptability, stand out for their seamless bidirectional interactions with biological entities through stimulus-response and feedback loops, incorporating bio-neuromorphic intelligence for information exchange. This review illustrates recent progress in sensory digitalization, encompassing not only the digital representation of physical sensations such as touch, light, and temperature, correlating to tactile, visual, and thermal perceptions, but also the detection of biochemical stimuli such as gases, ions, and neurotransmitters, mirroring olfactory, gustatory, and neural processes. It thoroughly examines the material design, device manufacturing, and system integration, offering detailed insights. However, the field faces significant challenges, including the development of new device/system paradigms, forging genuine connections with biological systems, ensuring compatibility with the semiconductor industry and overcoming the absence of standardization. Future ambition includes realization of biocompatible neural prosthetics, exoskeletons, soft humanoid robots, and cybernetic devices that integrate smoothly with both biological tissues and artificial components.
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Affiliation(s)
- Xiao Zhao
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Haochen Zou
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Ming Wang
- Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai, 200433, China
| | - Jianwu Wang
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
- Innovative Centre for Flexible Devices (iFLEX) Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Wang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lianhui Wang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaodong Chen
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
- Innovative Centre for Flexible Devices (iFLEX) Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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3
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Wang H, Guo H, Guzman R, JiaziLa N, Wu K, Wang A, Liu X, Liu L, Wu L, Chen J, Huan Q, Zhou W, Yang H, Pantelides ST, Bao L, Gao HJ. Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311652. [PMID: 38502781 DOI: 10.1002/adma.202311652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Revised: 02/29/2024] [Indexed: 03/21/2024]
Abstract
The explosive growth of massive-data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise for innovations in memory devices. Here, this work presents non-volatile, floating-gate memory devices with all functional layers made of 2D materials, achieving ultrafast programming/erasing speeds (20 ns), high extinction ratios (up to 108), and multi-bit storage capability. These devices also exhibit long-term data retention exceeding 10 years, facilitated by a high gate-coupling ratio (GCR) and atomically sharp interfaces between functional layers. Additionally, this work demonstrates the realization of an "OR" logic gate on a single-device unit by synergistic electrical and optical operations. The present results provide a solid foundation for next-generation ultrahigh-speed, ultralong lifespan, non-volatile memory devices, with a potential for scale-up manufacturing and flexible electronics applications.
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Affiliation(s)
- Hao Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hui Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Roger Guzman
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Nuertai JiaziLa
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Aiwei Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xuanye Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Li Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liangmei Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jiancui Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qing Huan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haitao Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Sokrates T Pantelides
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Department of Physics and Astronomy & Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, 37235, USA
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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Jeon Y, Kim S, Seo J, Yoo H. Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials. SMALL METHODS 2024; 8:e2300391. [PMID: 37231569 DOI: 10.1002/smtd.202300391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/29/2023] [Indexed: 05/27/2023]
Abstract
Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.
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Affiliation(s)
- Yunchae Jeon
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
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Liu G, Guo F, Zhang M, Liu Y, Hao J, Yu W, Li S, Hu B, Zhang B, Hao L. All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37294624 DOI: 10.1021/acsami.3c04541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.
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Affiliation(s)
- Guanchu Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Jingyi Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
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Paramanik S, Pal AJ. Combining negative photoconductivity and resistive switching towards in-memory logic operations. NANOSCALE 2023; 15:5001-5010. [PMID: 36786743 DOI: 10.1039/d3nr00278k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A family of rudorffites based on silver-bismuth-iodide shows a transition from a conventional positive photoconductivity (PPC) to an unusual negative photoconductivity (NPC) upon variation in the precursor stoichiometry while forming the rudorffites. The NPC has arisen in silver-rich rudorffites due to the generation of illumination-induced trap-states which prompted the recombination of charge carriers and thereby a decrease in the conductivity of the compounds. In addition to photoconductivity, sandwiched devices based on all the rudorffites exhibited resistive switching between a pristine high resistive state (HRS) and a low resistive state (LRS) under a suitable voltage pulse; the switching process, which is reversible, is associated with a memory phenomenon. The devices based on NPC-exhibiting rudorffites switched to the HRS under illumination as well. That is, the resistive state of the devices could be controlled through both electrical and optical inputs. We employed such interesting optoelectronic properties of NPC-exhibiting rudorffites to exhibit OR logic gate operation. Because the devices could function as a logic gate and store the resistive state as well, we concluded that the materials could be an ideal candidate for in-memory logic operations.
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Affiliation(s)
- Subham Paramanik
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
| | - Amlan J Pal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
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Huang CY, Li H, Wu Y, Lin CH, Guan X, Hu L, Kim J, Zhu X, Zeng H, Wu T. Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications. NANO-MICRO LETTERS 2022; 15:16. [PMID: 36580150 PMCID: PMC9800676 DOI: 10.1007/s40820-022-00983-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Accepted: 10/31/2022] [Indexed: 05/19/2023]
Abstract
Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.
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Affiliation(s)
- Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Hanchen Li
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Ye Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xiaoming Zhu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia.
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Gou R, Ouyang Z, Xu C, He S, Cheng S, Shi C, Zhao J, Xiao Y, Lei S, Cheng B. Actual origin and precise control of asymmetrical hysteresis in an individual CH 3NH 3PbI 3 micro/nanowire for optical memory and logic operation. NANOSCALE HORIZONS 2022; 7:1095-1108. [PMID: 35913084 DOI: 10.1039/d2nh00209d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CH3NH3PbI3 micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Song He
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shouduan Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
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