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Kang Y, Pei Y, He D, Xu H, Ma M, Yan J, Jiang C, Li W, Xiao X. Spatially selective p-type doping for constructing lateral WS 2 p-n homojunction via low-energy nitrogen ion implantation. LIGHT, SCIENCE & APPLICATIONS 2024; 13:127. [PMID: 38821920 PMCID: PMC11143290 DOI: 10.1038/s41377-024-01477-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 04/13/2024] [Accepted: 05/10/2024] [Indexed: 06/02/2024]
Abstract
The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work, we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth, which is more suitable for modulating the electrical and optical properties of 2D materials. Hence, we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS2 and successfully realize a precise regulation for WS2 with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore, the universality of this method is demonstrated by extending it to other 2D semiconductors, including WSe2, SnS2 and MoS2. Based on this method, a lateral WS2 p-n homojunction is fabricated, which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared, and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.
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Affiliation(s)
- Yufan Kang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Yongfeng Pei
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Dong He
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Hang Xu
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Mingjun Ma
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Jialu Yan
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Changzhong Jiang
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
| | - Wenqing Li
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
| | - Xiangheng Xiao
- School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China.
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Bianchi MG, Risplendi F, Re Fiorentin M, Cicero G. Engineering the Electrical and Optical Properties of WS 2 Monolayers via Defect Control. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305162. [PMID: 38009517 PMCID: PMC10811516 DOI: 10.1002/advs.202305162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2023] [Revised: 09/25/2023] [Indexed: 11/29/2023]
Abstract
Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.
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Affiliation(s)
- Michele Giovanni Bianchi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Francesca Risplendi
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Michele Re Fiorentin
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
| | - Giancarlo Cicero
- Department of Applied Science and TechnologyPolitecnico di Torinocorso Duca degli Abruzzi 24Torino10129Italy
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Mawlong LPL, Hoang AT, Chintalapalli J, Ji S, Lee K, Kim K, Ahn JH. Reduced Defect Density in MOCVD-Grown MoS 2 by Manipulating the Precursor Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:47359-47367. [PMID: 37756669 DOI: 10.1021/acsami.3c09027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.
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Affiliation(s)
- Larionette P L Mawlong
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jyothi Chintalapalli
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kihyun Lee
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, 50 Yonsei-ro, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), 50 Yonsei-ro, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seoul 03722, Republic of Korea
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Yao YC, Wu BY, Chin HT, Yen ZL, Ting CC, Hofmann M, Hsieh YP. Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS 2. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42746-42752. [PMID: 37646637 DOI: 10.1021/acsami.3c07793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising materials for optoelectronics due to their unique optical and electric properties. However, their potential has been limited by the occurrence of atomic vacancies during synthesis. While post-treatment processes have demonstrated the passivation of such vacancies, they increase process complexity and affect the TMDC's quality. We here introduce the concept of pretreatment as a facile and powerful route to solve the problem of vacancies in MoS2. Low-temperature nitridation of the sapphire substrate prior to growth provides a nondestructive method to MoS2 modification without introducing new processing steps or increasing the thermal budget. Spectroscopic characterization and atomic-resolution microscopy reveal the incorporation of nitrogen from the sapphire surface layer into chalcogen vacancies. The resulting MoS2 with nitrogen-saturated defects shows a decrease in midgap states and more intrinsic doping as confirmed by ab initio calculations and optoelectronic measurements. The demonstrated pretreatment method opens up new routes toward future, high-performance 2D electronics, as evidenced by a 3-fold reduction in contact resistance and a 10-fold improved performance of 2D photodetectors.
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Affiliation(s)
- Yu-Chi Yao
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Bo-Yi Wu
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Hao-Ting Chin
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan
| | - Chu-Chi Ting
- Graduate Institute of Opto-Mechatronics, Department of Mechanical Engineering, National Chung Cheng University, Chia-Yi 62102, Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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Wang J, Yue X, Zhu J, Hu L, Liu R, Cong C, Qiu ZJ. Revealing the origin of PL evolution of InSe flake induced by laser irradiation. RSC Adv 2023; 13:7780-7788. [PMID: 36909766 PMCID: PMC9994422 DOI: 10.1039/d3ra00324h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 03/01/2023] [Indexed: 03/11/2023] Open
Abstract
Two-dimensional InSe has been considered as a promising candidate for novel optoelectronic devices owing to large electron mobility and a near-infrared optical band gap. However, its widespread applications suffer from environmental instability. A lot of theoretical studies on the degradation mechanism of InSe have been reported whereas the experimental proofs are few. Meanwhile, the role of the extrinsic environment is still obscure during the degradation. As a common technique of studying the degradation mechanism of 2D materials, laser irradiation exhibits many unique advantages, such as being fast, convenient, and offering in situ compatibility. Here, we have developed a laser-treated method, which involves performing repeated measurements at the same point while monitoring the evolution of the resulting PL, to systematically study the photo-induced degradation process of InSe. Interestingly, we observe different evolution behavior of PL intensity under weak irradiation and strong irradiation. Our experimental results indicate the vacancy passivation and degrading effect simultaneously occurring in InSe under a weak laser irradiation, resulting in the PL increasing first and then decreasing during the measurement. Meanwhile we also notice that the passivation has a stronger effect on the PL than the degrading effect of weak oxidation. In contrast, under a strong laser irradiation, the InSe suffers serious destruction caused by excess heating and intense oxidation. This leads to a direct decrease of PL and corresponding oxidative products. Our work provides a reliable experimental supplement to the photo oxidation study of InSe and opens up a new avenue to regulate the PL of InSe.
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Affiliation(s)
- Jing Wang
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Xiaofei Yue
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - JunQiang Zhu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Laigui Hu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Ran Liu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
| | - Chunxiao Cong
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China .,Yiwu Research Institute of Fudan University Yiwu City 322000 Zhejiang China
| | - Zhi-Jun Qiu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University Shanghai 200433 China
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