1
|
Bonaventura E, Martella C, Macis S, Dhungana DS, Krotkus S, Heuken M, Lupi S, Molle A, Grazianetti C. Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene. NANOTECHNOLOGY 2024; 35:23LT01. [PMID: 38467059 DOI: 10.1088/1361-6528/ad3254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 03/10/2024] [Indexed: 03/13/2024]
Abstract
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets exhibits a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of ultra-thin tin films therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.
Collapse
Affiliation(s)
- Eleonora Bonaventura
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
- Dipartment of Materials Science, University of Milano-Bicocca, via R. Cozzi 55, Milano, Italy
| | - Christian Martella
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | - Salvatore Macis
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Roma, Italy
| | - Daya S Dhungana
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | | | | | - Stefano Lupi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Roma, Italy
- CNR-IOM, Q2 Building, Area Science Park, Basovizza-Trieste, Italy
| | - Alessandro Molle
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | - Carlo Grazianetti
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| |
Collapse
|
2
|
Wang K, Prévot G, Aqua JN. Anomalous intralayer growth of epitaxial Si on Ag(111). Sci Rep 2024; 14:2401. [PMID: 38287099 PMCID: PMC10825137 DOI: 10.1038/s41598-024-52348-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2023] [Accepted: 01/17/2024] [Indexed: 01/31/2024] Open
Abstract
The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard [Formula: see text] shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.
Collapse
Affiliation(s)
- Kejian Wang
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France
| | - Geoffroy Prévot
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France
| | - Jean-Noël Aqua
- Sorbonne Université, Centre National de la Recherche Scientifique, Institut des NanoSciences de Paris, INSP, 4, place Jussieu, 75005, Paris, France.
| |
Collapse
|
3
|
Koch J, Ghosal C, Sologub S, Tegenkamp C. Morphology of Bi(110) quantum islands on epitaxial graphene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:065701. [PMID: 37871600 DOI: 10.1088/1361-648x/ad05fb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 10/23/2023] [Indexed: 10/25/2023]
Abstract
Proximitized 2D materials present exciting prospects for exploring new quantum properties, enabled by precise control of structures and interfaces through epitaxial methods. In this study, we investigated the structure of ultrathin coverages formed by depositing high-Z element bismuth (Bi) on monolayer graphene (MLG)/SiC(0001). By utilizing electron diffraction and scanning tunneling microscopy, ultrathin Bi nanostructures epitaxially grown on MLG were studied. Deposition at 300 K resulted in formation of needle-like Bi(110)-terminated islands elongated in the zig-zag direction and aligned at an angle of approximately 1.75∘with respect to the MLG armchair direction. By both strain and quantum size effects, the shape, the orientation and the thickness of the Bi(110) islands can be rationalized. Additionally, a minority phase of Bi(110) islands orthogonally aligned to the former ones were seen. The four sub-domains of this minority structure are attributed to the formation of mirror twin boundaries, resulting in two potential alignments of Bi(110) majority and minority domains with respect to each other, in addition to two possible alignments of the majority domain with respect to graphene. Notably, an annealing step at 410 K or lowering the deposition temperature, significantly increases the concentration of the Bi(110) minority domain. Our findings shed light on the structural control of proximitized 2D materials, showcasing the potential for manipulating 2D interfaces.
Collapse
Affiliation(s)
- Julian Koch
- Institut für Physik, Technische Universtät Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
| | - Chitran Ghosal
- Institut für Physik, Technische Universtät Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
| | - Sergii Sologub
- Institut für Physik, Technische Universtät Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
- Institute of Physics, National Academy of Sciences of Ukraine, Nauki avenue 46, 03028 Kyiv, Ukraine
| | - Christoph Tegenkamp
- Institut für Physik, Technische Universtät Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
| |
Collapse
|
4
|
Lu H, Liu W, Wang H, Liu X, Zhang Y, Yang D, Pi X. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide. NANOTECHNOLOGY 2023; 34:132001. [PMID: 36563353 DOI: 10.1088/1361-6528/acae28] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.
Collapse
Affiliation(s)
- Hui Lu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Wenji Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Xiao Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| |
Collapse
|