1
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Yuan J, Hu F, Ju Y, Li S, Zhao H, Zhang C, Gan Z, Xiao M, Wang X. Perovskite Quantum Heterostructure Constructed by Halide Mixing between a Single CsPbI 3 Nanocrystal and an Individual CsPbBr 3 Microplate. J Phys Chem Lett 2024; 15:6763-6770. [PMID: 38912978 DOI: 10.1021/acs.jpclett.4c01312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
Ion migration is significantly enhanced in lead-halide perovskites with a soft crystal lattice, which can promote the formation of a heterogeneous interface between two such materials with different halide-anion compositions. Here we have deposited a single CsPbI3 nanocrystal (NC) on top of an individual CsPbBr3 microplate to create a mixed-halide CsPbBrxI3-x (0 < x < 3) NC by means of the anion exchange process. The formation of a CsPbBrxI3-x/CsPbBr3 heterostructure is confirmed by the much-enlarged geometric volume of the CsPbBrxI3-x NC as compared to the original CsPbI3 one, as well as by its capability of receiving photogenerated excitons from the CsPbBr3 microplate with a larger bandgap energy. The quantum nature of this heterostructure is reflected from single-photon emission of the composing CsPbBrxI3-x NC, which can also be bulk-like during phase segregation to demonstrate a red shift in the photoluminescence peak that is opposite to the common trend observed in smaller-sized mixed-halide NCs.
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Affiliation(s)
- Junyang Yuan
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fengrui Hu
- College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University, Nanjing 210093, China
| | - Yu Ju
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Si Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Hao Zhao
- School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhixing Gan
- School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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2
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Duan J, Li J, Divitini G, Cortecchia D, Yuan F, You J, Liu SF, Petrozza A, Wu Z, Xi J. 2D Hybrid Perovskites: From Static and Dynamic Structures to Potential Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403455. [PMID: 38723249 DOI: 10.1002/adma.202403455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Revised: 04/29/2024] [Indexed: 05/22/2024]
Abstract
2D perovskites have received great attention recently due to their structural tunability and environmental stability, making them highly promising candidates for various applications by breaking property bottlenecks that affect established materials. However, in 2D perovskites, the complicated interplay between organic spacers and inorganic slabs makes structural analysis challenging to interpret. A deeper understanding of the structure-property relationship in these systems is urgently needed to enable high-performance tunable optoelectronic devices. Herein, this study examines how structural changes, from constant lattice distortion and variable structural evolution, modeled with both static and dynamic structural descriptors, affect macroscopic properties and ultimately device performance. The effect of chemical composition, crystallographic inhomogeneity, and mechanical-stress-induced static structural changes and corresponding electronic band variations is reported. In addition, the structure dynamics are described from the viewpoint of anharmonic vibrations, which impact electron-phonon coupling and the carriers' dynamic processes. Correlated carrier-matter interactions, known as polarons and acting on fine electronic structures, are then discussed. Finally, reliable guidelines to facilitate design to exploit structural features and rationally achieve breakthroughs in 2D perovskite applications are proposed. This review provides a global structural landscape of 2D perovskites, expected to promote the prosperity of these materials in emerging device applications.
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Affiliation(s)
- Jianing Duan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering & International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Giorgio Divitini
- Electron Spectroscopy and Nanoscopy, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
| | - Daniele Cortecchia
- Department of Industrial Chemistry "Toso Montanari", University of Bologna, Via Piero Gobetti 85, Bologna, 40129, Italy
- Center for Nano Science and Technology@Polimi, Istituto Italiano di Tecnologia, via Rubattino 81, Milano, 20134, Italy
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jiaxue You
- Department of Materials Science and Engineering, Hong Kong Institute for Clean Energy, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shengzhong Frank Liu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science & Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Annamaria Petrozza
- Center for Nano Science and Technology@Polimi, Istituto Italiano di Tecnologia, via Rubattino 81, Milano, 20134, Italy
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
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3
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Gong X, Hao X, Si J, Deng Y, An K, Hu Q, Cai Q, Gao Y, Ke Y, Wang N, Du Z, Cai M, Ye Z, Dai X, Liu Z. High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr 3 Emitters in a Carrier-Confined Heterostructure. ACS NANO 2024; 18:8673-8682. [PMID: 38471123 DOI: 10.1021/acsnano.3c09004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.
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Affiliation(s)
- Xinquan Gong
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Xiaoming Hao
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Junjie Si
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yunzhou Deng
- Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE U.K
| | - Kai An
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Qianqing Hu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - You Ke
- Shaanxi Institute of Flexible Electronics (SIFE), Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU) 127 West Youyi Road, Xi'an 710072, People's Republic of China
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Zhuopeng Du
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Muzhi Cai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Zugang Liu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
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4
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Jastrzebska-Perfect P, Zhu W, Saravanapavanantham M, Li Z, Spector SO, Brenes R, Satterthwaite PF, Ram RJ, Niroui F. On-site growth of perovskite nanocrystal arrays for integrated nanodevices. Nat Commun 2023; 14:3883. [PMID: 37414770 DOI: 10.1038/s41467-023-39488-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Accepted: 06/15/2023] [Indexed: 07/08/2023] Open
Abstract
Despite remarkable progress in the development of halide perovskite materials and devices, their integration into nanoscale optoelectronics has been hindered by a lack of control over nanoscale patterning. Owing to their tendency to degrade rapidly, perovskites suffer from chemical incompatibility with conventional lithographic processes. Here, we present an alternative, bottom-up approach for precise and scalable formation of perovskite nanocrystal arrays with deterministic control over size, number, and position. In our approach, localized growth and positioning is guided using topographical templates of controlled surface wettability through which nanoscale forces are engineered to achieve sub-lithographic resolutions. With this technique, we demonstrate deterministic arrays of CsPbBr3 nanocrystals with tunable dimensions down to <50 nm and positional accuracy <50 nm. Versatile, scalable, and compatible with device integration processes, we then use our technique to demonstrate arrays of nanoscale light-emitting diodes, highlighting the new opportunities that this platform offers for perovskites' integration into on-chip nanodevices.
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Affiliation(s)
- Patricia Jastrzebska-Perfect
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Weikun Zhu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mayuran Saravanapavanantham
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zheng Li
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Sarah O Spector
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Roberto Brenes
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Peter F Satterthwaite
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Rajeev J Ram
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Farnaz Niroui
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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5
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Zhang Z, Kim W, Ko MJ, Li Y. Perovskite single-crystal thin films: preparation, surface engineering, and application. NANO CONVERGENCE 2023; 10:23. [PMID: 37212959 PMCID: PMC10203094 DOI: 10.1186/s40580-023-00373-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Accepted: 05/08/2023] [Indexed: 05/23/2023]
Abstract
Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.
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Affiliation(s)
- Zemin Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China
| | - Wooyeon Kim
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
| | - Min Jae Ko
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea.
| | - Yuelong Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China.
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6
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Ma F, Huang Z, Ziółek M, Yue S, Han X, Rong D, Guo Z, Chu K, Jia X, Wu Y, Zhao J, Liu K, Xing J, Wang Z, Qu S. Template-Assisted Synthesis of a Large-Area Ordered Perovskite Nanowire Array for a High-Performance Photodetector. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12024-12031. [PMID: 36812095 DOI: 10.1021/acsami.2c20887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
One-dimensional (1D) organic-inorganic hybrid perovskite nanowires (NWs) with well-defined structures possess superior optical and electrical properties for optoelectronic applications. However, most of the perovskite NWs are synthesized in air, which makes the NWs susceptible to water vapor, resulting in large amounts of grain boundaries or surface defects. Here, a template-assisted antisolvent crystallization (TAAC) method is designed to fabricate CH3NH3PbBr3 NWs and arrays. It is found that the as-synthesized NW array has designable shapes, low crystal defects, and ordered alignment, which is attributed to the sequestration of water and oxygen in air by the introduction of acetonitrile vapor. The photodetector based on the NWs exhibits an excellent response to light illumination. Under the illumination of a 532 nm laser with 0.1 μW and a bias of -1 V, the responsivity and detectivity of the device reach 1.55 A/W and 1.21 × 1012 Jones, respectively. The transient absorption spectrum (TAS) shows a distinct ground state bleaching signal only at 527 nm, which corresponds to the absorption peak induced by the interband transition of CH3NH3PbBr3. Narrow absorption peaks (a few nanometers) indicate that the energy-level structures of CH3NH3PbBr3 NWs only have a few impurity-level-induced transitions leading to additional optical loss. This work provides an effective and simple strategy to achieve high-quality CH3NH3PbBr3 NWs, which exhibit potential application in photodetection.
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Affiliation(s)
- Fangyuan Ma
- School of Science, China University of Geosciences, Beijing 100083, China
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Zhitao Huang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Marcin Ziółek
- Faculty of Physics, Adam Mickiewicz University Poznan, 61-614 Poznan, Poland
| | - Shizhong Yue
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Han
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Dongke Rong
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zihao Guo
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Kaiwen Chu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaohao Jia
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yulin Wu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Zhao
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kong Liu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Xing
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zhijie Wang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shengchun Qu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Liang Z, Tian C, Li X, Cheng L, Feng S, Yang L, Yang Y, Li L. Organic-Inorganic Lead Halide Perovskite Single Crystal: From Synthesis to Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4235. [PMID: 36500856 PMCID: PMC9741294 DOI: 10.3390/nano12234235] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 11/15/2022] [Accepted: 11/23/2022] [Indexed: 06/17/2023]
Abstract
Organic-inorganic lead halide perovskite is widely used in the photoelectric field due to its excellent photoelectric characteristics. Among them, perovskite single crystals have attracted much attention due to its lower trap density and better carrier transport capacity than their corresponding polycrystalline materials. Owing to these characteristics, perovskite single crystals have been widely used in solar cells, photodetectors, light-emitting diode (LED), and so on, which have greater potential than polycrystals in a series of optoelectronic applications. However, the fabrication of single-crystal devices is limited by size, thickness, and interface problems, which makes the development of single-crystal devices inferior to polycrystalline devices, which also limits their future development. Here, several representative optoelectronic applications of perovskite single crystals are introduced, and some existing problems and challenges are discussed. Finally, we outlook the growth mechanism of single crystals and further the prospects of perovskite single crystals in the further field of microelectronics.
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Affiliation(s)
- Zhenye Liang
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Tian
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoxi Li
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Liwei Cheng
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
| | - Shanglei Feng
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lifeng Yang
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yingguo Yang
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Lina Li
- Zhangjiang Laboratory, Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Institute of Applied Physics & Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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8
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Diyali S, Manna M, Mahato S, Kumar V, Roy Choudhury A, Biswas B, Bhandari S. Hybrid Lead Bromide Perovskite Single Crystals Coupled with a Zinc(II) Complex for White Light Emission. J Phys Chem Lett 2022; 13:10759-10766. [PMID: 36374525 DOI: 10.1021/acs.jpclett.2c02876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Herein we report the fabrication of green emitting hybrid lead bromide perovskite single crystals (HLBPSCs), their anion exchange mediated tunable yellow luminescence and thereby their coupling ability with blue emitting inorganic complex leading to generation of a photostable white light emission, with properties close to bright day sunlight. The partial anion exchange reaction to green emitting HLBPSCs led to formation of yellow emitting anion exchanged HLBPSCs─which are termed as AE-HLBPSCs herein. Then, AE-HLBPSCs were chemically combined with blue emitting Zn-aspirin complex to produce white light with a photoluminescence quantum yield (PLQY) of 47.7%. The solid form of the white light emitting (WLE) composite (followed by coating with poly methyl methacrylate─PMMA) showed color coordinates of (0.34, 0.33), color rendering index of 76 and correlated color temperature of 5282 K. Furthermore, the PMMA coated inorganic complex coupled AE-HLBPSCs showed the preservation of their WLE nature and luminescence stability in their solid form.
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Affiliation(s)
- Sangharaj Diyali
- Department of Chemistry, University of North Bengal, Darjeeling, West Bengal 734013, India
| | - Mihir Manna
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
| | - Shreya Mahato
- Department of Chemistry, University of North Bengal, Darjeeling, West Bengal 734013, India
| | - Vierandra Kumar
- Department of Chemical Sciences, Indian Institute of Science Education and Research, Mohali, Sector 81, Knowledge City, S. A. S. Nagar, Manauli PO, Mohali, Punjab 140306, India
| | - Angshuman Roy Choudhury
- Department of Chemical Sciences, Indian Institute of Science Education and Research, Mohali, Sector 81, Knowledge City, S. A. S. Nagar, Manauli PO, Mohali, Punjab 140306, India
| | - Bhaskar Biswas
- Department of Chemistry, University of North Bengal, Darjeeling, West Bengal 734013, India
| | - Satyapriya Bhandari
- Department of Chemistry, University of North Bengal, Darjeeling, West Bengal 734013, India
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