1
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Zhu M, Yin H, Cao J, Xu L, Lu P, Liu Y, Ding L, Fan C, Liu H, Zhang Y, Jin Y, Peng LM, Jin C, Zhang Z. Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403743. [PMID: 38862115 DOI: 10.1002/adma.202403743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 06/05/2024] [Indexed: 06/13/2024]
Abstract
Semiconducting carbon nanotubes (CNTs) are considered as the most promising channel material to construct ultrascaled field-effect transistors, but the perfect sp2 C─C structure makes stable doping difficult, which limits the electrical designability of CNT devices. Here, an inner doping method is developed by filling CNTs with 1D halide perovskites to form a coaxial heterojunction, which enables a stable n-type field-effect transistor for constructing complementary metal-oxide-semiconductor electronics. Most importantly, a quasi-broken-gap (BG) heterojunction tunnel field-effect transistor (TFET) is first demonstrated based on an individual partial-filling CsPbBr3/CNT and exhibits a subthreshold swing of 35 mV dec-1 with a high on-state current of up to 4.9 µA per tube and an on/off current ratio of up to 105 at room temperature. The quasi-BG TFET based on the CsPbBr3/CNT coaxial heterojunction paves the way for constructing high-performance and ultralow power consumption integrated circuits.
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Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
- School of Integrated Circuits, Nanjing University, Suzhou, Jiangsu, 210023, China
| | - Huimin Yin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Jiang Cao
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Peng Lu
- Institute of Microelectronics, Chinese Academy of Science, Beijing, 100029, China
| | - Yang Liu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Haiyang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Yuanfang Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yizheng Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Key Laboratory of Excited-State Materials of Zhejiang Province, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, China
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2
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Teng Y, Zhang Y, Xie X, Yao J, Zhang Z, Geng L, Zhao P, Yang C, Gong W, Wang X, Hu Z, Kang L, Fang X, Li Q. Interfacial Electron Transfer in PbI 2@Single-Walled Carbon Nanotube van der Waals Heterostructures for High-Stability Self-Powered Photodetectors. J Am Chem Soc 2024; 146:6231-6239. [PMID: 38386884 DOI: 10.1021/jacs.3c14188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/24/2024]
Abstract
Acquiring a deep insight into the electron transfer mechanism and applications of one-dimensional (1D) van der Waals heterostructures (vdWHs) has always been a significant challenge. Herein, through direct observation using aberration-corrected transmission electron microscopy (AC-TEM), we verify the stable formation of a high-quality 1D heterostructure composed of PbI2@single-walled carbon nanotubes (SWCNTs). The phenomenon of electron transfer between PbI2 and SWCNT is elucidated through spectroscopic investigations, including Raman and X-ray photoelectron spectroscopy (XPS). Electrochemical testing indicates the electron transfer and enduring stability of 1D PbI2 within SWCNTs. Moreover, leveraging the aforementioned electron transfer mechanism, we engineer self-powered photodetectors that exhibit exceptional photocurrent and a 3-order-of-magnitude switching ratio. Subsequently, we reveal its unique electron transfer behavior using Kelvin probe force microscopic (KPFM) tests. According to KPFM, the average surface potential of SWCNTs decreases by 80.6 mV after filling. Theoretical calculations illustrate a charge transfer of 0.02 e per unit cell. This work provides an effective strategy for the in-depth investigation and application of electron transfer in 1D vdWHs.
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Affiliation(s)
- Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- School of Nano Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, P.R. China
| | - Xiaoxuan Xie
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- Department of Chemistry, College of Sciences, Shanghai University, Shanghai 200444, P.R. China
| | - Jian Yao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- School of Nano-Technology and Nano-Bionics, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Zhen Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Lin Geng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Chengpeng Yang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Wenbin Gong
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Xiujun Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
| | - Lixing Kang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- School of Nano-Technology and Nano-Bionics, University of Science and Technology of China, Hefei 230026, P.R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai 200433, P.R. China
| | - Qingwen Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P.R. China
- School of Nano-Technology and Nano-Bionics, University of Science and Technology of China, Hefei 230026, P.R. China
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3
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Milligan G, Yao ZF, Cordova DLM, Tong B, Arguilla MQ. Single Quasi-1D Chains of Sb 2Se 3 Encapsulated within Carbon Nanotubes. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:730-741. [PMID: 38282683 PMCID: PMC10809716 DOI: 10.1021/acs.chemmater.3c02114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 12/27/2023] [Accepted: 12/28/2023] [Indexed: 01/30/2024]
Abstract
The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.
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Affiliation(s)
- Griffin
M. Milligan
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Ze-Fan Yao
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
- Department
of Chemical and Biomolecular Engineering, University of California Irvine, Irvine, California 92697, United States
| | | | - Baixin Tong
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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4
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Liu S, Teng Y, Zhang Z, Lai J, Hu Z, Zhang W, Zhang W, Zhu J, Wang X, Li Y, Zhao J, Zhang Y, Qiu S, Zhou W, Cao K, Chen Q, Kang L, Li Q. Interlayer Charge Transfer Induced Electrical Behavior Transition in 1D AgI@sSWCNT van der Waals Heterostructures. NANO LETTERS 2024; 24:741-747. [PMID: 38166145 DOI: 10.1021/acs.nanolett.3c04298] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The emergence of one-dimensional van der Waals heterostructures (1D vdWHs) opens up potential fields with unique properties, but precise synthesis remains a challenge. The utilization of mixed conductive types of carbon nanotubes as templates has imposed restrictions on the investigation of the electrical behavior and interlayer interaction of 1D vdWHs. In this study, we efficiently encapsulated silver iodide in high-purity semiconducting single-walled carbon nanotubes (sSWCNTs), forming 1D AgI@sSWCNT vdWHs. We characterized the semiconductor-metal transition and increased the carrier concentration of individual AgI@sSWCNTs via sensitive dielectric force microscopy and confirmed the results through electrical device tests. The electrical behavior transition was attributed to an interlayer charge transfer, as demonstrated by Kelvin probe force microscopy. Furthermore, we showed that this method of synthesizing 1D heterostructures can be extended to other metal halides. This work opens the door for the further exploration of the electrical properties of 1D vdWHs.
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Affiliation(s)
- Shuai Liu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China
| | - Zhen Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Junqi Lai
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Wendi Zhang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
| | - Wujun Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Juntong Zhu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China
| | - Xiujun Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Yunfei Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Jintao Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
- School of Nano Science and Technology, University of Science and Technology of China, 96 Jinzhai Road, Hefei 230026, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Song Qiu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Wu Zhou
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of the Chinese Academy of Sciences, Beijing 100190, China
| | - Kecheng Cao
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Lixing Kang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
| | - Qingwen Li
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Shanghai, 201210, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou 215123, China
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5
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Zhao X, Wang K, Yang G, Wang X, Qiu C, Huang J, Long Y, Yang X, Yu B, Jia G, Yang F. Sorting of Cluster-Confined Metallic Single-Walled Carbon Nanotubes for Fabricating Atomically Vacant Uranium Oxide. J Am Chem Soc 2023; 145:25242-25251. [PMID: 37767700 DOI: 10.1021/jacs.3c08534] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/29/2023]
Abstract
Single-walled carbon nanotube (SWCNT) heterostructures have shown great potential in catalysis, magnetism, and nanofluidics, in which host SWCNTs with certain conductivity (metallic or semiconducting) are highly required. Herein, inspired by the large molecular weight and redox properties of polyoxometalate (POM) clusters, we reported the selective separation of POM encapsulated metallic SWCNTs (POM@m-SWCNTs) with a uniform diameter through density gradient ultracentrifugation (DGU). The confined POMs increased the SWCNT density and amplified the nanotubes' density difference, thus greatly lowering the centrifugal force (70,000g) of DGU. With this strategy, a series of POM@m-SWCNTs of ∼1.2 nm with high purity were sorted. The mechanism supported by theoretical and experimental evidence showed that the separation of m-SWCNTs depended on not only nanotube/cluster size but also the conductivity of SWCNTs. The smallest 1.2 nm m-SWCNT that can exactly accommodate a 0.9 nm-{Mo6} cluster exhibited the maximum electron transfer to inner clusters; thus, intertube π-π stacking of such m-SWCNTs was greatly loosened, leading to the preferential dispersion into individual ones and partitioning in the uppermost layer after DGU. As a proof-of-concept application, this sorting strategy was extended to separate heavy-element 238U-encapsulated m-SWCNTs. The phase-pure, tiny (1-2.5 nm) U4O9 crystals with atomic vacancy clusters were fabricated on m-SWCNTs through growth kinetic control. This work may provide a general way to construct desired actinide materials on specific SWCNTs.
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Affiliation(s)
- Xin Zhao
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Kun Wang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Guoping Yang
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, Jiangxi Province Key Laboratory of Synthetic Chemistry, East China University of Technology, Nanchang 330013, China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Chenguang Qiu
- Department of Electronics, Peking University, Beijing 100871, China
| | - Jian Huang
- Jiangxi Key Laboratory for Mass Spectrometry and Instrumentation, Jiangxi Province Key Laboratory of Synthetic Chemistry, East China University of Technology, Nanchang 330013, China
| | - Yanglin Long
- Department of Electronics, Peking University, Beijing 100871, China
| | - Xiaoxin Yang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Boyuan Yu
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Guodong Jia
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
| | - Feng Yang
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, China
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6
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Cull W, Skowron ST, Hayter R, Stoppiello CT, Rance GA, Biskupek J, Kudrynskyi ZR, Kovalyuk ZD, Allen CS, Slater TJA, Kaiser U, Patanè A, Khlobystov AN. Subnanometer-Wide Indium Selenide Nanoribbons. ACS NANO 2023; 17:6062-6072. [PMID: 36916820 PMCID: PMC10061931 DOI: 10.1021/acsnano.3c00670] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/22/2023] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
Indium selenides (InxSey) have been shown to retain several desirable properties, such as ferroelectricity, tunable photoluminescence through temperature-controlled phase changes, and high electron mobility when confined to two dimensions (2D). In this work we synthesize single-layer, ultrathin, subnanometer-wide InxSey by templated growth inside single-walled carbon nanotubes (SWCNTs). Despite the complex polymorphism of InxSey we show that the phase of the encapsulated material can be identified through comparison of experimental aberration-corrected transmission electron microscopy (AC-TEM) images and AC-TEM simulations of known structures of InxSey. We show that, by altering synthesis conditions, one of two different stoichiometries of sub-nm InxSey, namely InSe or β-In2Se3, can be prepared. Additionally, in situ AC-TEM heating experiments reveal that encapsulated β-In2Se3 undergoes a phase change to γ-In2Se3 above 400 °C. Further analysis of the encapsulated species is performed using X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), energy dispersive X-ray analysis (EDX), and Raman spectroscopy, corroborating the identities of the encapsulated species. These materials could provide a platform for ultrathin, subnanometer-wide phase-change nanoribbons with applications as nanoelectronic components.
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Affiliation(s)
- William
J. Cull
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Stephen T. Skowron
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Ruth Hayter
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Craig T. Stoppiello
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Graham A. Rance
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
| | - Johannes Biskupek
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Zakhar R. Kudrynskyi
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
- Faculty
of Engineering, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Zakhar D. Kovalyuk
- Institute
for Problems of Materials Science, National Academy of Sciences of
Ukraine, Chernivtsi Branch, 58001 Chernivtsi, Ukraine
| | - Christopher S. Allen
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Thomas J. A. Slater
- Electron
Physical Sciences Imaging Centre, Diamond
Light Source ltd, Didcot OX11 0DE, United Kingdom
| | - Ute Kaiser
- Central
Facility of Electron Microscopy, Electron Microscopy Group of Materials
Science, University of Ulm, 89081 Ulm, Germany
| | - Amalia Patanè
- School
of Physics, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrei N. Khlobystov
- School
of Chemistry, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
- Nanoscale
and Microscale Research Centre, University
of Nottingham, Nottingham NG7 2QL, United Kingdom
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7
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Hu Z, Breeze B, Walker M, Faulques E, Sloan J, Lloyd-Hughes J. Spectroscopic Insights into the Influence of Filling Carbon Nanotubes with Atomic Nanowires for Photophysical and Photochemical Applications. ACS APPLIED NANO MATERIALS 2023; 6:2883-2893. [PMID: 36875181 PMCID: PMC9972344 DOI: 10.1021/acsanm.2c05266] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
Studying the optical performance of carbon nanotubes (CNTs) filled with guest materials can reveal the fundamental photochemical nature of ultrathin one-dimensional (1D) nanosystems, which are attractive for applications including photocatalysis. Here, we report comprehensive spectroscopic studies of how infiltrated HgTe nanowires (NWs) alter the optical properties of small-diameter (d t < 1 nm) single-walled carbon nanotubes (SWCNTs) in different environments: isolated in solution, suspended in a gelatin matrix, and heavily bundled in network-like thin films. Temperature-dependent Raman and photoluminescence measurements revealed that the HgTe NW filling can alter the stiffness of SWCNTs and therefore modify their vibrational and optical modes. Results from optical absorption and X-ray photoelectron spectroscopy demonstrated that the semiconducting HgTe NWs did not provide substantial charge transfer to or from the SWCNTs. Transient absorption spectroscopy further highlighted that the filling-induced nanotube distortion can alter the temporal evolution of excitons and their transient spectra. In contrast to previous studies on functionalized CNTs, where electronic or chemical doping often drove changes to the optical spectra, we highlight structural distortion as playing an important role.
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Affiliation(s)
- Ziyi Hu
- Department
of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Ben Breeze
- Department
of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Marc Walker
- Department
of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Eric Faulques
- Institut
des Matriaux de Nantes Jean Rouxel, CNRS,
University of Nantes, Nantes F-44000, France
| | - Jeremy Sloan
- Department
of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
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8
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Kharlamova MV, Kramberger C. Electrochemistry of Carbon Materials: Progress in Raman Spectroscopy, Optical Absorption Spectroscopy, and Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:640. [PMID: 36839009 PMCID: PMC9961505 DOI: 10.3390/nano13040640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 01/27/2023] [Accepted: 01/29/2023] [Indexed: 06/18/2023]
Abstract
This paper is dedicated to the discussion of applications of carbon material in electrochemistry. The paper starts with a general discussion on electrochemical doping. Then, investigations by spectroelectrochemistry are discussed. The Raman spectroscopy experiments in different electrolyte solutions are considered. This includes aqueous solutions and acetonitrile and ionic fluids. The investigation of carbon nanotubes on different substrates is considered. The optical absorption experiments in different electrolyte solutions and substrate materials are discussed. The chemical functionalization of carbon nanotubes is considered. Finally, the application of carbon materials and chemically functionalized carbon nanotubes in batteries, supercapacitors, sensors, and nanoelectronic devices is presented.
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Affiliation(s)
- Marianna V. Kharlamova
- Centre for Advanced Materials Application (CEMEA) of Slovak Academy of Sciences, Dúbravská cesta 5807/9, 845 11 Bratislava, Slovakia
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9
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Yousefipour K, Sarraf-Mamoory R, Mollayousefi S. Synthesis of manganese molybdate/MWCNT nanostructure composite with a simple approach for supercapacitor applications. RSC Adv 2022; 12:27868-27876. [PMID: 36320277 PMCID: PMC9520677 DOI: 10.1039/d2ra04691a] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 09/15/2022] [Indexed: 01/07/2023] Open
Abstract
Recently, magnesium molybdate materials have attracted scientific attention for application in supercapacitor devices due to advantages like low synthesis cost and good redox reactions. Nevertheless, these materials endure low electrical conductivity leading to inferior electrochemical performance. To eliminate this drawback, we prepare a composite powder containing magnesium molybdate and functionalized carbon nanotubes (MMO/C) using a simple process to improve the supercapacitive properties. The results proved an electrostatic interaction between the two components of the composite powder, which contains 18-30 nm magnesium molybdate nanoparticles. A crystal model related to magnesium molybdate powder (MMO) was simulated, illustrating that MnO6 octahedra are formed next to MoO4 tetrahedra. The mesoporous structure of both powders was confirmed whereas the specific surface area of the MMO was enhanced by 69.9% to 36.86 m2 g-1 in the MMO/C powder with more electroactive sites. The higher electrical conductivity of the MMO/C electrode was proved using electrochemical impedance spectroscopy (EIS) results, with the MMO/C electrode achieving a specific capacitance of 571 F g-1 at 1 A g-1 current density, improved by more than 4.5 times that of the MMO. Furthermore, the rate performance and cycling stability of the MMO/C electrode reached 87% and 85.2%, respectively. Finally, a two-electrode energy storage device (MMO/C//AC) was assembled. It reveals a specific capacitance of 94.7 F g-1, a maximum energy density of 29.6 W h kg-1 at a power density of 660.1 W kg-1, and cycling performance of 84.3% after 2000 cycles. As a result, the resulting data demonstrate that the MMO/C electroactive material has promising abilities in capacitive energy storage systems.
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Affiliation(s)
- Kian Yousefipour
- Department of Materials Engineering, Tarbiat Modares University Tehran Iran
| | | | - Shadi Mollayousefi
- Department of Materials Engineering, Tarbiat Modares University Tehran Iran
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