Directional Exciton-Energy Transport in a Lateral Heteromonolayer of WSe2-MoSe2

Remote Excitation of Tip-Enhanced Photoluminescence with a Parallel AgNW Coupler

Tip-enhanced photoluminescence (TEPL) microscopy allows for the correlation of scanning probe microscopic images and photoluminescent spectra at the nanoscale level in a similar way to tip-enhanced Raman scattering (TERS) microscopy. However, due to the higher cross-section of fluorescence compared to Raman scattering, the diffraction-limited background signal generated by far-field excitation is a limiting factor in the achievable spatial resolution of TEPL. Here, we demonstrate a way to overcome this drawback by using remote excitation TEPL (RE-TEPL). With this approach, the excitation and detection positions are spatially separated, minimizing the far-field contribution. Two probe designs are evaluated, both experimentally and via simulations. The first system consists of gold nanoparticles (AuNPs) through photoinduced deposition on a silver nanowire (AgNW), and the second system consists of two offset parallel AgNWs. This latter coupler system shows a higher coupling efficiency and is used to successfully demonstrate RE-TEPL spectral mapping on a MoSe2/WSe2 lateral heterostructure to reveal spatial heterogeneity at the heterojunction.

Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe2-WSe2) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.

High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides

van der Waals (vdW) layered materials have attracted much attention because their physical properties can be controlled by varying the twist angle and layer composition. However, such twisted vdW assemblies are often prepared using mechanically exfoliated monolayer flakes with unintended shapes through a time-consuming search for such materials. Here, we report the rapid and dry fabrication of twisted multilayers using chemical vapor deposition (CVD) grown transition metal chalcogenide (TMDC) monolayers. By improving the adhesion of an acrylic resin stamp to the monolayers, the single crystals of various TMDC monolayers with desired grain size and density on a SiO2/Si substrate can be efficiently picked up. The present dry transfer process demonstrates the one-step fabrication of more than 100 twisted bilayers and the sequential stacking of a twisted 10-layer MoS2 single crystal. Furthermore, we also fabricated hBN-encapsulated TMDC monolayers and various twisted bilayers including MoSe2/MoS2, MoSe2/WSe2, and MoSe2/WS2. The interlayer interaction and quality of dry-transferred, CVD-grown TMDCs were characterized by using photoluminescence (PL), cathodoluminescence (CL) spectroscopy, and cross-sectional electron microscopy. The prominent PL peaks of interlayer excitons can be observed for MoSe2/MoS2 and MoSe2/WSe2 with small twist angles at room temperature. We also found that the optical spectra were locally modulated due to nanosized bubbles, which are formed by the presence of interface carbon impurities. The present findings indicate the widely applicable potential of the present method and enable an efficient search of the emergent optical and electrical properties of TMDC-based vdW heterostructures.

The Spatial Correlation and Anisotropy of β-(AlxGa1-x)2O3 Single Crystal

The long-range crystallographic order and anisotropy in β-(Al_xGa_1-x)₂O₃ (x = 0.0, 0.06, 0.11, 0.17, 0.26) crystals, prepared by optical floating zone method with different Al composition, is systematically studied by spatial correlation model and using an angle-resolved polarized Raman spectroscopy. Alloying with aluminum is seen as causing Raman peaks to blue shift while their full widths at half maxima broadened. As x increased, the correlation length (CL) of the Raman modes decreased. By changing x, the CL is more strongly affected for low-frequency phonons than the modes in the high-frequency region. For each Raman mode, the CL is decreased by increasing temperature. The results of angle-resolved polarized Raman spectroscopy have revealed that the intensities of β-(Al_xGa_1-x)₂O₃ peaks are highly polarization dependent, with significant effects on the anisotropy with alloying. As the Al composition increased, the anisotropy of Raman tensor elements was enhanced for the two strongest phonon modes in the low-frequency range, while the anisotropy of the sharpest Raman phonon modes in the high-frequency region decreased. Our comprehensive study has provided meaningful results for comprehending the long-range orderliness and anisotropy in technologically important β-(Al_xGa_1-x)₂O₃ crystals.

Interface engineering of charge-transfer excitons in 2D lateral heterostructures

The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe₂-WSe₂ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. We show that for hBN-encapsulated heterostructures, CT excitons exhibit small binding energies of just a few tens meV and at the same time large dipole moments, making them promising materials for optoelectronic applications (benefiting from an efficient exciton dissociation and fast dipole-driven exciton propagation). Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.

Surface acoustic wave induced phenomena in two-dimensional materials

Surface acoustic wave (SAW)-matter interaction provides a fascinating key for inducing and manipulating novel phenomena and functionalities in two-dimensional (2D) materials. The dynamic strain field and piezo-electric field associated with propagating SAWs determine the coherent manipulation and transduction between 2D excitons and phonons. Over the past decade, many intriguing acoustic-induced effects, including the acousto-electric effect, acousto-galvanic effect, acoustic Stark effect, acoustic Hall effect and acoustic exciton transport, have been reported experimentally. However, many more phenomena, such as the valley acousto-electric effect, valley acousto-electric Hall effect and acoustic spin Hall effect, were only theoretically proposed, the experimental verification of which are yet to be achieved. In this minireview, we attempt to overview the recent breakthrough of SAW-induced phenomena covering acoustic charge transport, acoustic exciton transport and modulation, and coherent acoustic phonons. Perspectives on the opportunities of the proposed SAW-induced phenomena, as well as open experimental challenges, are also discussed, attempting to offer some guidelines for experimentalists and theorists to explore the desired exotic properties and boost practical applications of 2D materials.

Copper sulfide nanoribbon growth triggered by carbon nanotube aggregation via dialysis

The growth of copper sulfide (Cu _x S) nanoribbons, a class of Cu _x S nanomaterials, was achieved by the aggregation of single-walled carbon nanotubes (SWCNTs) via a dialysis process. The obtained nanoribbon structure and its constituent elements on a film of SWCNT aggregates were confirmed by transmission electron microscopy (TEM) and scanning transmittance electron microscopy-energy dispersive X-ray spectroscopy. The subsequently obtained TEM images and Raman spectra revealed that nucleus synthesis and subsequent growth of Cu _x S nanoribbons occurred during the aggregation of SWCNTs. The growth procedure described in this work provides an approach for the wet chemical synthesis of metal sulfide nanomaterials.

Electronic property modulation in two-dimensional lateral superlattices of monolayer transition metal dichalcogenides

Fabricating lateral heterostructures (HSs) and superlattices (SLs) provides a unique degree of freedom for modulating the physical properties of two-dimensional (2D) materials by varying the chemical component, geometric size and interface structure in the ultra-thin atomic thickness limit. While a variety of 2D lateral HSs/SLs have been synthesized, especially for transition metal dichalcogenides (TMDs), how such structures affect quantitatively the physical properties of 2D materials has not yet been established. We herein explore electronic property modulation in 2D lateral SLs of monolayer TMDs through first-principles high-throughput calculations. The dependence of the electronic structure, bandgap, carrier effective masses, charge density overlap on chemical components, interface type, and sub-lattice size of lateral TMD-SLs are investigated. We find that by comparison with their random alloy counterparts, the lateral TMD-SLs exhibit generally type-II band alignment, a wider range of bandgap tunability, larger carrier effective masses, and stronger electron-hole charge separation tendency. The bandgap variation with a sub-lattice size shows larger bowing parameters for the SLs with heterogeneous anions, by comparison with the homogeneous anion cases. A similar behavior is observed for the SLs with an armchair-type interface, by comparison with the zigzag-type interface cases. Further analyses reveal that the underlying physical mechanism can be attributed to the synergistic interplay among the band offset of sub-lattices, quantum confinement effect, and existing internal strain.