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Su T, Yu Y, Ross CA. Directed Self-Assembly of Oxide Nanocomposites by Ion-Beam Lithography. NANO LETTERS 2024; 24:195-201. [PMID: 38117033 DOI: 10.1021/acs.nanolett.3c03703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Vertically aligned self-assembled nanocomposite films have provided a unique platform to study magnetoelectric effects and other forms of coupling between complex oxides. However, the distribution in the locations and sizes of the phase-separated nanostructures limits their utility. In this work, we demonstrate a process to template the locations of the self-assembled structure using ion lithography, which is effective for general insulating substrates. This process was used to produce a nanocomposite consisting of fin-shaped vertical nanostructures of ferroelectric BiFeO3 and ferrimagnetic CoFe2O4 with a feature size of 100 nm on (111)-oriented SrTiO3 substrates. Cross-sectional imaging of the three-phase perovskite-spinel-substrate epitaxial interface reveals the selective nucleation of CoFe2O4 in the trenches of the patterned substrate, and the magnetic domains of CoFe2O4 were manipulated by applying an external magnetic field.
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Affiliation(s)
- Tingyu Su
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yang Yu
- International Applications Center, Raith America, Inc., Troy, New York 12180, United States
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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Liu C, Wang J, He W, Zhang C, Zhang S, Yuan S, Hou Z, Qin M, Xu Y, Gao X, Peng Y, Liu K, Qiu ZQ, Liu JM, Zhang X. Strain-Induced Reversible Motion of Skyrmions at Room Temperature. ACS NANO 2024; 18:761-769. [PMID: 38127497 DOI: 10.1021/acsnano.3c09090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Magnetic skyrmions are topologically protected swirling spin textures with great potential for future spintronic applications. The ability to induce skyrmion motion using mechanical strain not only stimulates the exploration of exotic physics but also affords the opportunity to develop energy-efficient spintronic devices. However, the experimental realization of strain-driven skyrmion motion remains a formidable challenge. Herein, we demonstrate that the inhomogeneous uniaxial compressive strain can induce the movement of isolated skyrmions from regions of high strain to regions of low strain at room temperature, which was directly observed using an in situ Lorentz transmission electron microscope with a specially designed nanoindentation holder. We discover that the uniaxial compressive strain can transform skyrmions into a single domain with in-plane magnetization, resulting in the coexistence of skyrmions with a single domain along the direction of the strain gradient. Through comprehensive micromagnetic simulations, we reveal that the repulsive interactions between skyrmions and the single domain serve as the driving force behind the skyrmion motion. The precise control of skyrmion motion through strain provides exciting opportunities for designing advanced spintronic devices that leverage the intricate interplay between strain and magnetism.
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Affiliation(s)
- Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Junlin Wang
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
- School of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K
| | - Wa He
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Senfu Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Shuai Yuan
- School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, P. R. China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yongbing Xu
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
- School of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yong Peng
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, P. R. China
| | - Kai Liu
- Physics Department, Georgetown University, Washington, D.C. 20057, United States
| | - Zi Qiang Qiu
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Jun-Ming Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 211102, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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Li M, Yang H, Xie Y, Huang K, Pan L, Tang W, Bao X, Yang Y, Sun J, Wang X, Che S, Li RW. Enhanced Stress Stability in Flexible Co/Pt Multilayers with Strong Perpendicular Magnetic Anisotropy. NANO LETTERS 2023; 23:8073-8080. [PMID: 37615627 DOI: 10.1021/acs.nanolett.3c02047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Due to the magnetoelastic coupling, the magnetic properties of many flexible magnetic films (such as Fe, Co, and Ni) are sensitive to mechanical stress, which deteriorates the performance of flexible magnetoelectronic devices. We show that by stacking Co and Pt alternatively to form multilayers with strong perpendicular magnetic anisotropy (PMA), both magnetic hysteresis and magnetic domain measurements reveal robust PMA against external stress. As the PMA weakens at increased Co thickness, the magnetic anisotropy is vulnerable to external stress. These results were understood based on a micromagnetic model, which suggests that the strength of magnetoelastic anisotropy with respect to initial effective magnetic anisotropy affects the stress-stability of the film. Although the stress coefficient of magnetoelastic anisotropy is enhanced at reduced Co thickness, the concomitant increase of initial effective magnetic anisotropy guarantees a robust PMA against external stress. Our results provide a route to constructing flexible magnetoelectronic devices with enhanced stress stability.
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Affiliation(s)
- Mengchao Li
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Huali Yang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yali Xie
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Kai Huang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Lili Pan
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Wei Tang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xilai Bao
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Jie Sun
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Xinming Wang
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
| | - Shenglei Che
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310034, People's Republic of China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China
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