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Domröse T, Fernandez N, Eckel C, Rossnagel K, Weitz RT, Ropers C. Nanoscale Operando Imaging of Electrically Driven Charge-Density Wave Phase Transitions. NANO LETTERS 2024. [PMID: 39316412 DOI: 10.1021/acs.nanolett.4c03324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
Structural transformations in strongly correlated materials promise efficient and fast control of materials' properties via electrical or optical stimulation. The desired functionality of devices operating based on phase transitions, however, will also be influenced by nanoscale heterogeneity. Experimentally characterizing the relationship between microstructure and phase switching remains challenging, as nanometer resolution and high sensitivity to subtle structural modifications are required. Here, we demonstrate nanoimaging of a current-induced phase transformation in the charge-density wave (CDW) material 1T-TaS2. Combining electrical characterizations with tailored contrast enhancement, we correlate macroscopic resistance changes with the nanoscale nucleation and growth of CDW phase domains. In particular, we locally determine the transformation barrier in the presence of dislocations and strain, underlining their non-negligible impact on future functional devices. Thereby, our results demonstrate the merit of tailored contrast enhancement and beam shaping for advanced operando microscopy of quantum materials and devices.
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Affiliation(s)
- Till Domröse
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, 37077 Göttingen, Germany
- 4th Physical Institute - Solids and Nanostructures, University of Göttingen, 37077 Göttingen, Germany
| | - Noelia Fernandez
- 1st Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Christian Eckel
- 1st Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
| | - Kai Rossnagel
- Institute of Experimental and Applied Physics, Kiel University, 24098 Kiel, Germany
- Ruprecht Haensel Laboratory, Deutsches Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
| | - R Thomas Weitz
- 1st Institute of Physics, University of Göttingen, 37077 Göttingen, Germany
- International Center for Advanced Studies of Energy Conversion (ICASEC), University of Göttingen, 37077 Göttingen, Germany
| | - Claus Ropers
- Department of Ultrafast Dynamics, Max Planck Institute for Multidisciplinary Sciences, 37077 Göttingen, Germany
- 4th Physical Institute - Solids and Nanostructures, University of Göttingen, 37077 Göttingen, Germany
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Lee SJ, Chuang HJ, Yeats AL, McCreary KM, O'Hara DJ, Jonker BT. Ferroelectric Modulation of Quantum Emitters in Monolayer WS 2. ACS NANO 2024; 18:25349-25358. [PMID: 39179534 DOI: 10.1021/acsnano.4c10528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2024]
Abstract
Quantum photonics promises significant advances in secure communications, metrology, sensing, and information processing/computation. Single-photon sources are fundamental to this endeavor. However, the lack of high-quality single photon sources remains a significant obstacle. We present here a paradigm for the control of single photon emitters (SPEs) and single photon purity by integrating monolayer WS2 with the organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)). We demonstrate that the ferroelectric domains in the P(VDF-TrFE) film control the purity of single photon emission from the adjacent WS2. By switching the ferroelectric polarization, we reversibly tune the single photon purity between the semiclassical and quantum light regimes, with single photon purities as high as 94%. This demonstrates a method for modulating and encoding quantum photonic information, complementing more complex approaches. This multidimensional heterostructure introduces an approach for control of quantum emitters by combining the nonvolatile ferroic properties of a ferroelectric with the radiative properties of the zero-dimensional atomic-scale emitters embedded in the two-dimensional WS2 semiconductor monolayer.
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Affiliation(s)
- Sung-Joon Lee
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Hsun-Jen Chuang
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Andrew L Yeats
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Kathleen M McCreary
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Dante J O'Hara
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Berend T Jonker
- U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
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Cheng WN, Niu M, Meng Y, Han X, Qiao J, Zhang J, Zhao X. Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide. NANO LETTERS 2024; 24:6441-6449. [PMID: 38757836 DOI: 10.1021/acs.nanolett.4c01771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS2 consecutively transform into metastable ABC stacking, resulting in unique 3a × 1a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.
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Affiliation(s)
- Wing Ni Cheng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Niu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Meng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jingsi Qiao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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Yue D, Tang C, Wu J, Luo X, Chen H, Qian Y. Potassium hydroxide treatment of layered WSe 2 with enhanced electronic performances. NANOSCALE 2024; 16:8345-8351. [PMID: 38606457 DOI: 10.1039/d3nr05432b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
2D WSe2-based electronic devices have received much research interest. However, it is still a challenge to achieve high electronic performance in WSe2-based devices. In this work, we report greatly enhanced performances of different thickness WSe2 ambipolar transistors and demonstrate homogeneous WSe2 inverter devices, which are obtained by using a semiconductor processing-compatible layer removal technique via chemical removal of the surface top WOx layer formed by O2 plasma treatment. Importantly, monolayer WSe2 was realised after several consecutive removal processes, demonstrating that the single layer removal is accurate and reliable. After subsequent removal of the top layer WOx by KOH, the fabricated WSe2 field-effect transistors exhibit greatly enhanced electronic performance along with the high electron and hole mobilities of 40 and 85 cm2 V-1 s-1, respectively. Our work demonstrates that the layer removal technique is an efficient route to fabricate high performance 2D material-based electronic devices.
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Affiliation(s)
- Dewu Yue
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, P. R. China
| | - Cheng Tang
- Graduate School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Jiajing Wu
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, P. R. China
| | - Xiaohui Luo
- College of Pharmacy, Jinhua Polytechnic, Jinhua, Zhejiang Province, 321007, P. R. China.
| | - Hongyu Chen
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
| | - Yongteng Qian
- College of Pharmacy, Jinhua Polytechnic, Jinhua, Zhejiang Province, 321007, P. R. China.
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Song X, Huang X, Yang H, Jia L, Zhang Q, Huang Y, Wu X, Liu L, Gao HJ, Wang Y. Robust Behavior of Charge Density Wave Quantum Motif Star-of-David in 2D NbSe 2 Nanocrystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2305159. [PMID: 37635109 DOI: 10.1002/smll.202305159] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/02/2023] [Indexed: 08/29/2023]
Abstract
Charge density wave (CDW) is a typical collective phenomenon, and the phase change is generally accompanied by electronic transition with potential device applications. For the continuous miniaturization of devices, it is important to investigate the size effect down to the nanoscale. In this work, single-layer (SL) 1T-NbSe2 islands provide an ideal research platform to investigate the size effect on CDW arrangement and electronic states. The CDW motifs (Star-of-David [SOD]) at the island border are along the edge, and those at the interior tend to arrange in a triangular lattice for islands as small as 5 nm. Interestingly, in some small islands, the SOD clusters rearrange into a square-like lattice, and each SOD cluster remains robust as a quantum motif, both in the sense of geometry and electronic structures. Moreover, the electronic structure at the center of the small islands is downwards shifted compared to the big islands, explained by the spatial extension of the band bending originating from the edge of the islands. These findings reveal the robust behavior of CDW motifs down to the nanoscale and provide new insights into the size-limiting effect on 2D2D CDW ordering and electronic states down to a few nanometer extremes.
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Affiliation(s)
- Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xinyu Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liangguang Jia
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Wu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
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Husremović S, Goodge BH, Erodici MP, Inzani K, Mier A, Ribet SM, Bustillo KC, Taniguchi T, Watanabe K, Ophus C, Griffin SM, Bediako DK. Encoding multistate charge order and chirality in endotaxial heterostructures. Nat Commun 2023; 14:6031. [PMID: 37758701 PMCID: PMC10533556 DOI: 10.1038/s41467-023-41780-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 09/16/2023] [Indexed: 09/29/2023] Open
Abstract
High-density phase change memory (PCM) storage is proposed for materials with multiple intermediate resistance states, which have been observed in 1T-TaS2 due to charge density wave (CDW) phase transitions. However, the metastability responsible for this behavior makes the presence of multistate switching unpredictable in TaS2 devices. Here, we demonstrate the fabrication of nanothick verti-lateral H-TaS2/1T-TaS2 heterostructures in which the number of endotaxial metallic H-TaS2 monolayers dictates the number of resistance transitions in 1T-TaS2 lamellae near room temperature. Further, we also observe optically active heterochirality in the CDW superlattice structure, which is modulated in concert with the resistivity steps, and we show how strain engineering can be used to nucleate these polytype conversions. This work positions the principle of endotaxial heterostructures as a promising conceptual framework for reliable, non-volatile, and multi-level switching of structure, chirality, and resistance.
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Affiliation(s)
- Samra Husremović
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Berit H Goodge
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
- Max-Planck-Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Matthew P Erodici
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Katherine Inzani
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Alberto Mier
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA
| | - Stephanie M Ribet
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- International Institute of Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Karen C Bustillo
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Colin Ophus
- National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Sinéad M Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, CA, 94720, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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Barani Z, Geremew T, Stokey M, Sesing N, Taheri M, Hilfiker MJ, Kargar F, Schubert M, Salguero TT, Balandin AA. Quantum Composites with Charge-Density-Wave Fillers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209708. [PMID: 36812299 DOI: 10.1002/adma.202209708] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 02/12/2023] [Indexed: 05/12/2023]
Abstract
A unique class of advanced materials-quantum composites based on polymers with fillers composed of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases-is demonstrated. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapse of the quantum states. The macroscopic charge-density-wave phases of filler particles after multiple composite processing steps are successfully preserved in this work. The prepared composites display strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.
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Affiliation(s)
- Zahra Barani
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Tekwam Geremew
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Megan Stokey
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Nicholas Sesing
- Department of Chemistry, University of Georgia, Athens, GA, 30602, USA
| | - Maedeh Taheri
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Matthew J Hilfiker
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Fariborz Kargar
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Mathias Schubert
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Tina T Salguero
- Department of Chemistry, University of Georgia, Athens, GA, 30602, USA
| | - Alexander A Balandin
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
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