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Zhang T, Fan C, Hu L, Zhuge F, Pan X, Ye Z. A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications. ACS NANO 2024; 18:16236-16247. [PMID: 38868857 DOI: 10.1021/acsnano.4c02278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Retina-inspired visual sensors play a crucial role in the realization of neuromorphic visual systems. Nevertheless, significant obstacles persist in the pursuit of achieving bidirectional synaptic behavior and attaining high performance in the context of photostimulation. In this study, we propose a reconfigurable all-optical controlled synaptic device based on the IGZO/SnO/SnS heterostructure, which integrates sensing, storage and processing functions. Relying on the simple heterojunction stack structure and the role of energy band engineering, synaptic excitatory and inhibitory behaviors can be observed under the light stimulation of ultraviolet (266 nm) and visible light (405, 520 and 658 nm) without additional voltage modulation. In particular, junction field-effect transistors based on the IGZO/SnO/SnS heterostructure were fabricated to elucidate the underlying bidirectional photoresponse mechanism. In addition to optical signal processing, an artificial neural network simulator based on the optoelectrical synapse was trained and recognized handwritten numerals with a recognition rate of 91%. Furthermore, we prepared an 8 × 8 optoelectrical synaptic array and successfully demonstrated the process of perception and memory for image recognition in the human brain, as well as simulated the situation of damage to the retina by ultraviolet light. This work provides an effective strategy for the development of high-performance all-optical controlled optoelectronic synapses and a practical approach to the design of multifunctional artificial neural vision systems.
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Affiliation(s)
- Tao Zhang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chao Fan
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Lingxiang Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Fei Zhuge
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xinhua Pan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zhizhen Ye
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
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Sui N, Ji Y, Li M, Zheng F, Shao S, Li J, Liu Z, Wu J, Zhao J, Li LJ. Photoprogrammed Multifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer-Sorted Semiconducting Single-Walled Carbon Nanotubes for Image Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401794. [PMID: 38828719 DOI: 10.1002/advs.202401794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/12/2024] [Indexed: 06/05/2024]
Abstract
The development of neuromorphic optoelectronic systems opens up the possibility of the next generation of artificial vision. In this work, the novel broadband (from 365 to 940 nm) and multilevel storage optoelectronic synaptic thin-film transistor (TFT) arrays are reported using the photosensitive conjugated polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(bithiophene)], F8T2) sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) as channel materials. The broadband synaptic responses are inherited to absorption from both photosensitive F8T2 and sorted sc-SWCNTs, and the excellent optoelectronic synaptic behaviors with 200 linearly increasing conductance states and long retention time > 103 s are attributed to the superior charge trapping at the AlOx dielectric layer grown by atomic layer deposition. Furthermore, the synaptic TFTs can achieve IOn/IOff ratios up to 106 and optoelectronic synaptic plasticity with the low power consumption (59 aJ per single pulse), which can simulate not only basic biological synaptic functions but also optical write and electrical erase, multilevel storage, and image recognition. Further, a novel Spiking Neural Network algorithm based on hardware characteristics is designed for the recognition task of Caltech 101 dataset and multiple features of the images are successfully extracted with higher accuracy (97.92%) of the recognition task from the multi-frequency curves of the optoelectronic synaptic devices.
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Affiliation(s)
- Nianzi Sui
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
| | - Yixi Ji
- School of Artificial Intelligence, Xidian University, Xi'an, 710071, P. R. China
| | - Min Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
| | - Fanyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, P. R. China
| | - Shuangshuang Shao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
| | - Jiaqi Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
| | - Zhaoxin Liu
- School of Artificial Intelligence, Xidian University, Xi'an, 710071, P. R. China
| | - Jinjian Wu
- School of Artificial Intelligence, Xidian University, Xi'an, 710071, P. R. China
| | - Jianwen Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
- Division of Nanodevices and Related Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, Suzhou Industrial Park, Suzhou, Jiangsu Province, 215123, P. R. China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, 999077, P. R. China
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Lu B, Stolte M, Liu D, Zhang X, Zhao L, Tian L, Frisbie CD, Würthner F, Tao X, He T. High Sensitivity and Ultra-Broad-Range NH 3 Sensor Arrays by Precise Control of Step Defects on The Surface of Cl 2-Ndi Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308036. [PMID: 38308194 PMCID: PMC11005746 DOI: 10.1002/advs.202308036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 01/02/2024] [Indexed: 02/04/2024]
Abstract
Vapor sensors with both high sensitivity and broad detection range are technically challenging yet highly desirable for widespread chemical sensing applications in diverse environments. Generally, an increased surface-to-volume ratio can effectively enhance the sensitivity to low concentrations, but often with the trade-off of a constrained sensing range. Here, an approach is demonstrated for NH3 sensor arrays with an unprecedentedly broad sensing range by introducing controllable steps on the surface of an n-type single crystal. Step edges, serving as adsorption sites with electron-deficient properties, are well-defined, discrete, and electronically active. NH3 molecules selectively adsorb at the step edges and nearly eliminate known trap-like character, which is demonstrated by surface potential imaging. Consequently, the strategy can significantly boost the sensitivity of two-terminal NH3 resistance sensors on thin crystals with a few steps while simultaneously enhancing the tolerance on thick crystals with dense steps. Incorporation of these crystals into parallel sensor arrays results in ppb-to-% level detection range and a convenient linear relation between sheet conductance and semi-log NH3 concentration, allowing for the precise localization of vapor leakage. In general, the results suggest new opportunities for defect engineering of organic semiconductor crystal surfaces for purposeful vapor or chemical sensing.
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Affiliation(s)
- Bin Lu
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Matthias Stolte
- Universität WürzburgInstitut für Organische Chemie & Center for Nanosystems ChemistryAm Hubland97074WürzburgGermany
| | - Dong Liu
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Xiaojing Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Lihui Zhao
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Liehao Tian
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - C. Daniel Frisbie
- Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolisMinnesota55455USA
| | - Frank Würthner
- Universität WürzburgInstitut für Organische Chemie & Center for Nanosystems ChemistryAm Hubland97074WürzburgGermany
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
| | - Tao He
- State Key Laboratory of Crystal Materials and Institute of Crystal MaterialsShandong UniversityJinan250100China
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Chen H, Cai Y, Han Y, Huang H. Towards Artificial Visual Sensory System: Organic Optoelectronic Synaptic Materials and Devices. Angew Chem Int Ed Engl 2024; 63:e202313634. [PMID: 37783656 DOI: 10.1002/anie.202313634] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 10/01/2023] [Accepted: 10/02/2023] [Indexed: 10/04/2023]
Abstract
Developing an artificial visual sensory system requires optoelectronic materials and devices that can mimic the behavior of biological synapses. Organic/polymeric semiconductors have emerged as promising candidates for optoelectronic synapses due to their tunable optoelectronic properties, mechanic flexibility, and biological compatibility. In this review, we discuss the recent progress in organic optoelectronic synaptic materials and devices, including their design principles, working mechanisms, and applications. We also highlight the challenges and opportunities in this field and provide insights into potential applications of these materials and devices in next-generation artificial visual systems. By leveraging the advances in organic optoelectronic materials and devices, we can envision its future development in artificial intelligence.
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Affiliation(s)
- Hao Chen
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunhao Cai
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yinghui Han
- College of Resources and Environment, University of Chinese Academy of Sciences, Beijing, 101408, China
| | - Hui Huang
- College of Materials Science and Opto-Electronic Technology &, Center of Materials Science and Optoelectronics Engineering &, College of Resources and Environment &, CAS Center for Excellence in Topological Quantum Computation &, CAS Key Laboratory of Vacuum Physic, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Fan A, Xu T, Teng G, Wang X, Zhang Y, Xu C, Xu X, Li J. Full-Stokes polarization multispectral images of various stereoscopic objects. Sci Data 2023; 10:328. [PMID: 37244913 DOI: 10.1038/s41597-023-02184-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Accepted: 04/25/2023] [Indexed: 05/29/2023] Open
Abstract
Polarization multispectral imaging (PMI) has been applied widely with the ability of characterizing physicochemical properties of objects. However, traditional PMI relies on scanning each domain, which is time-consuming and occupies vast storage resources. Therefore, it is imperative to develop advanced PMI methods to facilitate real-time and cost-effective applications. In addition, PMI development is inseparable from preliminary simulations based on full-Stokes polarization multispectral images (FSPMI). Whereas, FSPMI measurements are always necessary due to the lack of relevant databases, which is extremely complex and severely limits PMI development. In this paper, we therefore publicize abundant FSPMI with 512 × 512 spatial pixels measured by an established system for 67 stereoscopic objects. In the system, a quarter-wave plate and a linear polarizer are rotated to modulate polarization information, while bandpass filters are switched to modulate spectral information. The required FSPMI are finally calculated from designed 5 polarization modulation and 18 spectral modulation. The publicly available FSPMI database may have the potential to greatly promote PMI development and application.
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Affiliation(s)
- Axin Fan
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing, 401151, China
| | - Tingfa Xu
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China.
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing, 401151, China.
| | - Geer Teng
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Department of Engineering Science, Institute of Biomedical Engineering, University of Oxford, Oxford, OX3 7DQ, UK
| | - Xi Wang
- School of Printing & Packaging Engineering, Beijing Institute of Graphic Communication, Beijing, 102600, China
| | - Yuhan Zhang
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing, 401151, China
| | - Chang Xu
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xin Xu
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Institute of Technology Chongqing Innovation Center, Chongqing, 401151, China
| | - Jianan Li
- Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China.
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