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Han H, Zhang B, Zhang Z, Wang Y, Liu C, Singh AK, Song A, Li Y, Jin J, Zhang J. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. NANO LETTERS 2024. [PMID: 38954477 DOI: 10.1021/acs.nanolett.4c01679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
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Affiliation(s)
- Hecheng Han
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Baoqing Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Zihao Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Yiming Wang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Arun Kumar Singh
- Department of Electronics and Communications Engineering, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India
| | - Aimin Song
- Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuxiang Li
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Jidong Jin
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea
| | - Jiawei Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
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Song S, Rahaman M, Jariwala D. Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics? ACS NANO 2024; 18:10955-10978. [PMID: 38625032 DOI: 10.1021/acsnano.3c12938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.
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Affiliation(s)
- Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Mahfujur Rahaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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3
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Zhou Z, Lin JF, Zeng Z, Ma X, Liang L, Li Y, Zhao Z, Mei Z, Yang H, Li Q, Wu J, Fan S, Chen X, Xia TL, Wei Y. Engineering van der Waals Contacts by Interlayer Dipoles. NANO LETTERS 2024; 24:4408-4414. [PMID: 38567928 DOI: 10.1021/acs.nanolett.4c00056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.
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Affiliation(s)
- Zuoping Zhou
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Jun-Fa Lin
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zimeng Zeng
- Department of Physics, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Xiaoping Ma
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
- Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Liang Liang
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Yuheng Li
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Zhongyuan Zhao
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Zhen Mei
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Huaixin Yang
- Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qunqing Li
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Jian Wu
- Department of Physics, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Shoushan Fan
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
- State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Xi Chen
- Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
| | - Tian-Long Xia
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) and Laboratory for Neutron Scattering, Renmin University of China, Beijing 100872, P. R. China
| | - Yang Wei
- Department of Physics, Tsinghua University, Beijing 100084, China
- Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
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Qiao J, Liu H, Zhang D. Electric Tuning of Vortex Ratchet Effect in NbSe 2. NANO LETTERS 2024; 24:511-518. [PMID: 38147442 DOI: 10.1021/acs.nanolett.3c04585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Inversion symmetry breaking has played an important role in recent discoveries of nonreciprocal charge transport. Niobium diselenide, for example, lacks an inversion center in the monolayer form and can host prominent nonreciprocal transport property. Here, however, we observe a nonreciprocal transport signal in the second-harmonic channel of bulk-like NbSe2, in which inversion symmetry of the lattice seems preserved. The second-harmonic signal occurs along different in-plane current orientations and appears not only in the vortex-liquid regime but also even in the superconducting fluctuation regime without an applied magnetic field. By adding a direct current (DC) bias, we quantify the symmetry breaking effect in the vortex-liquid regime. The DC bias also suggests that the rectification effect at the contacts may account for the seemingly nonreciprocal transport at zero magnetic field. Our results demonstrate that DC biasing is a useful knob for addressing nonreciprocal charge transport in a wide range of materials.
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Affiliation(s)
- Jiabin Qiao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Haiwen Liu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 1000875, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
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5
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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6
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Ngo TD, Huynh T, Jung H, Ali F, Jeon J, Choi MS, Yoo WJ. Modulation of Contact Resistance of Dual-Gated MoS 2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2301400. [PMID: 37144526 PMCID: PMC10375162 DOI: 10.1002/advs.202301400] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Revised: 04/23/2023] [Indexed: 05/06/2023]
Abstract
Achieving low contact resistance (RC ) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS2 devices are systematically analyzed as a function of top and bottom gate-voltages (VTG and VBG ). The semimetal contacts not only significantly reduce RC but also induce a strong dependence of RC on VTG , in sharp contrast to Ti contacts that only modulate RC by varying VBG . The anomalous behavior is attributed to the strongly modulated pseudo-junction resistance (Rjun ) by VTG , resulting from weak Fermi level pinning (FLP) of Sb contacts. In contrast, the resistances under both metallic contacts remain unchanged by VTG as metal screens the electric field from the applied VTG . Technology computer aided design simulations further confirm the contribution of VTG to Rjun , which improves overall RC of Sb-contacted MoS2 devices. Consequently, the Sb contact has a distinctive merit in dual-gated (DG) device structure, as it greatly reduces RC and enables effective gate control by both VBG and VTG . The results offer new insight into the development of DG 2D FETs with enhanced contact properties realized by using semimetals.
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Affiliation(s)
- Tien Dat Ngo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tuyen Huynh
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hanggyo Jung
- Department of Electrical and Electronics Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Fida Ali
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, Espoo, FI-00076, Finland
| | - Jongwook Jeon
- Department of Electrical and Electronics Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Min Sup Choi
- Department of Materials Science and Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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