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Chen W, Yu N, Gong H, Li M, Xu W, Zhuo Z, Sun Z, Ni M, Huang W, Yang J, Lin Y, Wang L, Li H, Liang X, Sun N, Sun L, Bai L, Han Y, Tao Y, Xu M, Yin C, An X, Lin J, Huang W. Elastic-Plastic Fully π-Conjugated Polymer with Excellent Energy Dissipation Capacity for Ultra-Deep-Blue Flexible Polymer Light-Emitting Diodes with CIE y = 0.04. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402708. [PMID: 38837440 DOI: 10.1002/adma.202402708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 05/23/2024] [Indexed: 06/07/2024]
Abstract
Emerging intrinsically flexible fully π-conjugated polymers (FπCPs) are a promising functional material for flexible optoelectronics, attributed to their potential interchain interpenetration and entanglement. However, the challenge remains in obtaining elastic-plastic FπCPs with intrinsic robust optoelectronic property and excellent long-term and cycling deformation stability simultaneously for applications in deep-blue flexible polymer light-emitting diodes (PLEDs). This study, demonstrates a series of elastic-plastic FπCPs (P1-P4) with an excellent energy dissipation capacity via side-chain internal plasticization for the ultra-deep-blue flexible PLEDs. First, the freestanding P1 film exhibited a maximum fracture strain of 34.6%. More interestingly, the elastic behavior is observed with a low strain (≤10%), and the stretched film with a high deformation (>10%) attributed to plastic processing revealed the robust capacity to realize energy absorption and release. The elastic-plastic P1 film exhibits outstanding ultra-deep-blue emission, with an efficiency of 56.38%. Subsequently, efficient PLEDs are fabricated with an ultra-deep-blue emission of CIE (0.16, 0.04) and a maximum external quantum efficiency of 1.73%. Finally, stable and efficient ultra-deep-blue electroluminescence are obtained from PLEDs based on stretchable films with different strains and cycling deformations, suggesting excellent elastic-plastic behavior and deformation stability for flexible electronics.
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Affiliation(s)
- Wenyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ningning Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Huaqiang Gong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyuan Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Weifeng Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiqiang Zhuo
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyang Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mingjian Ni
- The Institute of Flexible Electronics, (IFE Future Technologies), Xiamen University(XMU), 422 Siming South Road, Xiamen, Fujian, 361005, China
| | - Wenxin Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jing Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yingru Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lizhi Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Hao Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Xinyu Liang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Ning Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lili Sun
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
| | - Lubing Bai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yamin Han
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Youtian Tao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Chengrong Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xiang An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen, 518107, China
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Song J, Lu H, Liu M, Hu H, Jiang J, Zhang L, Li H. Dopant Enhanced Conjugated Polymer Thin Film for Low-Power, Flexible and Wearable DMMP Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308595. [PMID: 38050930 DOI: 10.1002/smll.202308595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 11/15/2023] [Indexed: 12/07/2023]
Abstract
Conjugated polymer has the potential to be applied on flexible devices as an active layer, but further investigation is still hindered by poor conductivity and mechanical stability. Here, this work demonstrates a dopant-enhanced conductive polymer thin film and its application in dimethyl methylphosphonate (DMMP) sensor. Among five comparable polymers this work employs, poly(bisdodecylthioquaterthiophene) (PQTS12) achieves the highest doping efficiency after doped by FeCl3, with the conductivity increasing by about five orders of magnitude. The changes in Young's modulus are also considered to optimize the conductivity and flexibility of this thin film, and finally the decay of conductivity is only 9.2% after 3000 times of mechanical bending. This work applies this thin film as the active layer of the DMMP gas sensor, which could be operated under 1 mV driving voltage and 28 nW power consumption, with a sustainable durability against bending and compression. In addition, this sensor is provided with alarm capability while exposed to the DMMP atmospheres at different hazard levels. This work expects that this general approach could offer solutions for the fabrication of low-power and flexible gas sensors, and provide guidance for next-generation wearable devices with broader applications.
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Affiliation(s)
- Jian Song
- School of microelectronics, Shanghai University, Shanghai, 201800, China
- Shanghai Engineering Research Center of Organ Repair, Shanghai University, Shanghai, 201800, China
| | - Huimin Lu
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Meng Liu
- College of Chemistry and Materials Science, Shanghai Normal University, Shanghai, 200234, China
| | - Hong Hu
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Jingyan Jiang
- College of Big data and Internet, Shenzhen Technology University, Shenzhen, 518118, China
| | - Lei Zhang
- School of microelectronics, Shanghai University, Shanghai, 201800, China
| | - Hui Li
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai, 200050, China
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Sun N, Han Y, Huang W, Xu M, Wang J, An X, Lin J, Huang W. A Holistic Review of C = C Crosslinkable Conjugated Molecules in Solution-Processed Organic Electronics: Insights into Stability, Processibility, and Mechanical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309779. [PMID: 38237201 DOI: 10.1002/adma.202309779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 12/22/2023] [Indexed: 02/01/2024]
Abstract
Solution-processable organic conjugated molecules (OCMs) consist of a series of aromatic units linked by σ-bonds, which present a relatively freedom intramolecular motion and intermolecular re-arrangement under external stimulation. The cross-linked strategy provides an effective platform to obtain OCMs network, which allows for outstanding optoelectronic, excellent physicochemical properties, and substantial improvement in device fabrication. An unsaturated double carbon-carbon bond (C = C) is universal segment to construct crosslinkable OCMs. In this review, the authors will set C = C cross-linkable units as an example to summarize the development of cross-linkable OCMs for solution-processable optoelectronic applications. First, this review provides a comprehensive overview of the distinctive chemical, physical, and optoelectronic properties arising from the cross-linking strategies employed in OCMs. Second, the methods for probing the C = C cross-linking reaction are also emphasized based on the perturbations of chemical structure and physicochemical property. Third, a series of model C = C cross-linkable units, including styrene, trifluoroethylene, and unsaturated acid ester, are further discussed to design and prepare novel OCMs. Furthermore, a concise overview of the optoelectronic applications associated with this approach is presented, including light-emitting diodes (LEDs), solar cells (SCs), and field-effect transistors (FETs). Lastly, the authors offer a concluding perspective and outlook for the improvement of OCMs and their optoelectronic application via the cross-linking strategy.
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Affiliation(s)
- Ning Sun
- College of Chemistry and Chemical Engineering, Inner Mongolia Key Laboratory of Fine Organic Synthesis, Inner Mongolia University, Hohhot, 010021, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yamin Han
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wenxin Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Man Xu
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jianguo Wang
- College of Chemistry and Chemical Engineering, Inner Mongolia Key Laboratory of Fine Organic Synthesis, Inner Mongolia University, Hohhot, 010021, China
| | - Xiang An
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211816, China
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
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Wang P, Ma X, Lin Z, Chen F, Chen Z, Hu H, Xu H, Zhang X, Shi Y, Huang Q, Lin Y, Zheng Z. Well-defined in-textile photolithography towards permeable textile electronics. Nat Commun 2024; 15:887. [PMID: 38291087 PMCID: PMC10828459 DOI: 10.1038/s41467-024-45287-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 01/16/2024] [Indexed: 02/01/2024] Open
Abstract
Textile-based wearable electronics have attracted intensive research interest due to their excellent flexibility and breathability inherent in the unique three-dimensional porous structures. However, one of the challenges lies in achieving highly conductive patterns with high precision and robustness without sacrificing the wearing comfort. Herein, we developed a universal and robust in-textile photolithography strategy for precise and uniform metal patterning on porous textile architectures. The as-fabricated metal patterns realized a high precision of sub-100 µm with desirable mechanical stability, washability, and permeability. Moreover, such controllable coating permeated inside the textile scaffold contributes to the significant performance enhancement of miniaturized devices and electronics integration through both sides of the textiles. As a proof-of-concept, a fully integrated in-textiles system for multiplexed sweat sensing was demonstrated. The proposed method opens up new possibilities for constructing multifunctional textile-based flexible electronics with reliable performance and wearing comfort.
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Affiliation(s)
- Pengwei Wang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Xiaohao Ma
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Zhiqiang Lin
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Fan Chen
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Zijian Chen
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Hong Hu
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Hailong Xu
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
| | - Xinyi Zhang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuqing Shi
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qiyao Huang
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China.
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, China.
| | - Yuanjing Lin
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China.
| | - Zijian Zheng
- School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, China.
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong SAR, China.
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, China.
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong SAR, China.
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Ma X, Wang P, Huang L, Ding R, Zhou K, Shi Y, Chen F, Zhuang Q, Huang Q, Lin Y, Zheng Z. A monolithically integrated in-textile wristband for wireless epidermal biosensing. SCIENCE ADVANCES 2023; 9:eadj2763. [PMID: 37948514 PMCID: PMC10637736 DOI: 10.1126/sciadv.adj2763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 10/13/2023] [Indexed: 11/12/2023]
Abstract
Textile bioelectronics that allow comfortable epidermal contact hold great promise in noninvasive biosensing. However, their applications are limited mainly because of the large intrinsic electrical resistance and low compatibility for electronics integration. We report an integrated wristband that consists of multifunctional modules in a single piece of textile to realize wireless epidermal biosensing. The in-textile metallic patterning and reliable interconnect encapsulation contribute to the excellent electrical conductivity, mechanical robustness, and waterproofness that are competitive with conventional flexible devices. Moreover, the well-maintained porous textile architectures deliver air permeability of 79 mm s-1 and moisture permeability of 270 g m-2 day-1, which are more than one order of magnitude higher than medical tapes, thus ensuring superior wearing comfort. The integrated in-textile wristband performed continuous sweat potassium monitoring in the range of 0.3 to 40 mM with long-term stability, demonstrating its great potential for wearable fitness monitoring and point-of-care testing.
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Affiliation(s)
- Xiaohao Ma
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Pengwei Wang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Liting Huang
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Ruochen Ding
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kemeng Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuqing Shi
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Fan Chen
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Qiuna Zhuang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Qiyao Huang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
| | - Yuanjing Lin
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR 99077, China
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Hu H, Zhang C, Ding Y, Chen F, Huang Q, Zheng Z. A Review of Structure Engineering of Strain-Tolerant Architectures for Stretchable Electronics. SMALL METHODS 2023; 7:e2300671. [PMID: 37661591 DOI: 10.1002/smtd.202300671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 08/01/2023] [Indexed: 09/05/2023]
Abstract
Stretchable electronics possess significant advantages over their conventional rigid counterparts and boost game-changing applications such as bioelectronics, flexible displays, wearable health monitors, etc. It is, nevertheless, a formidable task to impart stretchability to brittle electronic materials such as silicon. This review provides a concise but critical discussion of the prevailing structural engineering strategies for achieving strain-tolerant electronic devices. Not only the more commonly discussed lateral designs of structures such as island-bridge, wavy structures, fractals, and kirigami, but also the less discussed vertical architectures such as strain isolation and elastoplastic principle are reviewed. Future opportunities are envisaged at the end of the paper.
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Affiliation(s)
- Hong Hu
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Chi Zhang
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Yichun Ding
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Fan Chen
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Qiyao Huang
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
| | - Zijian Zheng
- Laboratory for Advanced Interfacial Materials and Devices, School of Fashion and Textiles, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Department of Applied Biology and Chemical Technology, Faculty of Science, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
- Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hong Kong SAR, 999077, China
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Yi L, Hou B, Liu X. Optical Integration in Wearable, Implantable and Swallowable Healthcare Devices. ACS NANO 2023; 17:19491-19501. [PMID: 37807286 DOI: 10.1021/acsnano.3c04284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2023]
Abstract
Recent advances in materials and semiconductor technologies have led to extensive research on optical integration in wearable, implantable, and swallowable health devices. These optical systems utilize the properties of light─intensity, wavelength, polarization, and phase─to monitor and potentially intervene in various biological events. The potential of these devices is greatly enhanced through the use of multifunctional optical materials, adaptable integration processes, advanced optical sensing principles, and optimized artificial intelligence algorithms. This synergy creates many possibilities for clinical applications. This Perspective discusses key opportunities, challenges, and future directions, particularly with respect to sensing modalities, multifunctionality, and the integration of miniaturized optoelectronic devices. We present fundamental insights and illustrative examples of such devices in wearable, implantable, and swallowable forms. The constant pursuit of innovation and the dedicated approach to critical challenges are poised to influence diverse fields.
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Affiliation(s)
- Luying Yi
- Department of Chemistry, National University of Singapore, 117543, Singapore
| | - Bo Hou
- Department of Chemistry, National University of Singapore, 117543, Singapore
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, 117543, Singapore
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou 215123, China
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