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Wei Z, Mu Q, Fan R, Su Y, Lu Y, Deng Z, Shen M, Peng Y. Cupric porphyrin frameworks on multi-junction silicon photocathodes to expedite the kinetics of CO 2 turnover. NANOSCALE 2022; 14:8906-8913. [PMID: 35723269 DOI: 10.1039/d2nr01921c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Photoelectrochemical CO2 reduction utilizing silicon-based photocathodes offers a promising route to directly store solar energy in chemical bonds, provoking the development of heterogeneous molecular catalysts with high turnover rates. Herein, an in situ surface transformation strategy is adopted to grow metal-organic frameworks (MOFs) on Si-based photocathodes, serving as catalytic scaffolds for boosting both the kinetics and selectivity of CO2 reduction. Benefitting from the multi-junctional configuration for enhanced charge separation and the porous MOF scaffold enriching redox-active metalloporphyrin sites, the Si photocathode demonstrates a high CO faradaic efficiency of 87% at a photocurrent density of 10.2 mA cm-2, which is among the best seen for heterogeneous molecular catalysts. This study highlights the exploitation of reticular chemistry and macrocycle complexes as Earth-abundant alternatives for catalyzing artificial photosynthesis.
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Affiliation(s)
- Zhihe Wei
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China.
| | - Qiaoqiao Mu
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
| | - Ronglei Fan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China.
| | - Yanhui Su
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
| | - Yongtao Lu
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
| | - Zhao Deng
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
| | - Mingrong Shen
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China.
| | - Yang Peng
- Soochow Institute of Energy and Material Innovations, College of Energy, Soochow Municipal Laboratory for Lowe Carbon Technoliges and Industries, Soochow University, Suzhou 215006, China.
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2
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Zhang S, Lyu X, Hurtado Torres C, Darwish N, Ciampi S. Non-Ideal Cyclic Voltammetry of Redox Monolayers on Silicon Electrodes: Peak Splitting is Caused by Heterogeneous Photocurrents and Not by Molecular Disorder. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:743-750. [PMID: 34989574 DOI: 10.1021/acs.langmuir.1c02723] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Over the last three decades, research on redox-active monolayers has consolidated their importance as advanced functional material. For widespread monolayer systems, such as alkanethiols on gold, non-ideal multiple peaks in cyclic voltammetry are generally taken as indication of heterogeneous intermolecular interactions─namely, disorder in the monolayer. Our findings show that, contrary to metals, peak multiplicity of silicon photoelectrodes is not diagnostic of heterogeneous intermolecular microenvironments but is more likely caused by photocurrent being heterogeneous across the monolayer. This work is an important step toward understanding the cause of electrochemical non-idealities in semiconductor electrodes so that these can be prevented and the redox behavior of molecular monolayers, as photocatalytic systems, can be optimized.
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Affiliation(s)
- Song Zhang
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Xin Lyu
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Carlos Hurtado Torres
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Nadim Darwish
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
| | - Simone Ciampi
- School of Molecular and Life Sciences, Curtin University, Bentley, Western Australia 6102, Australia
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3
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High-speed III-V nanowire photodetector monolithically integrated on Si. Nat Commun 2020; 11:4565. [PMID: 32917898 PMCID: PMC7486389 DOI: 10.1038/s41467-020-18374-z] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2019] [Accepted: 08/07/2020] [Indexed: 11/12/2022] Open
Abstract
Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links. Direct epitaxial growth of III-V on Si for optical emitters and detectors remains a challenge. Here, the authors demonstrate in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si capable of high-speed optical data reception at 32 Gbps enabled by a 3 dB bandwidth exceeding 25 GHz.
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Zhang X, Yao X, Li Z, Zhou C, Yuan X, Tang Z, Hu W, Gan X, Zou J, Chen P, Lu W. Surface-States-Modulated High-Performance InAs Nanowire Phototransistor. J Phys Chem Lett 2020; 11:6413-6419. [PMID: 32673487 DOI: 10.1021/acs.jpclett.0c01879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report a high-performance InAs nanowire phototransistor with the photoresponse mechanism governed by the gate-controlled surface states. Detailed characterizations suggest that the high density of surface defect states of the InAs nanowire can capture electrons from the nanowire core to form negative surface charge centers. Before and after light illumination, nanowire surface states undergo processes of capturing and neutralizing the electrons, respectively. This leads to an increase in the concentration and mobility of electrons after light illumination, which endows the device with remarkable photoresponsivity. After modulating the surface states through gate voltage and surface passivation, significantly high responsivity of up to 4.4 × 103 A/W and gain of up to 2.7 × 103 under the illumination of light at the wavelength of 2000 nm are obtained, putting our devices among the high-performance short-wave infrared nanowire photodetectors. This work provides an important reference for understanding the surface effects of nanomaterials and enhancing the performance of nanophotodetectors by modulating the surface states.
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Affiliation(s)
- Xutao Zhang
- School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, Shaanxi 710129, China
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xiaomei Yao
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Ziyuan Li
- Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | | | - Xiaoming Yuan
- Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
| | - Zhou Tang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xuetao Gan
- School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, Shaanxi 710129, China
| | | | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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5
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Xu T, Wang H, Chen X, Luo M, Zhang L, Wang Y, Chen F, Shan C, Yu C. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires. NANOTECHNOLOGY 2020; 31:294004. [PMID: 32235081 DOI: 10.1088/1361-6528/ab8591] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III-V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
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Affiliation(s)
- Tengfei Xu
- Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, People's Republic of China. Key Laboratory of Space Active Opto-Electronics Technology, and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
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6
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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. MATERIALS 2020; 13:ma13061400. [PMID: 32204482 PMCID: PMC7142779 DOI: 10.3390/ma13061400] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/14/2020] [Accepted: 03/17/2020] [Indexed: 12/13/2022]
Abstract
Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.
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7
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Wen Y, He P, Wang Q, Yao Y, Zhang Y, Hussain S, Wang Z, Cheng R, Yin L, Getaye Sendeku M, Wang F, Jiang C, He J. Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices. ACS NANO 2019; 13:14519-14528. [PMID: 31794184 DOI: 10.1021/acsnano.9b08375] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mixed-dimensional van der Waals (vdW) heterostructures based on two-dimensional (2D) materials exhibit immense potential in infrared optoelectronic applications. However, the weak vdW coupling results in limiting performance of infrared optoelectronic device. Here, we exploit a gapless heterostructure that S dangling bonds of nonlayered PbS are connected to the bonding sites of MoS2 (with factitious S vacancies) via strong orbital hybridization. The strong interface coupling leads to ultrahigh responsivity and photogain (G) exceeding 105, and the detectivity (D*) is greater than 1014 Jones. More importantly, the gapless heterostructure shows fast rise and decay times about 47 and 49 μs, respectively, which is 5 orders of magnitude faster than that of transferred vdW heterostructures. Furthermore, an ultrahigh photon-triggered on/off ratio of 1.6 × 106 is achieved, which is 4 orders of magnitude higher than that of transferred vdW heterostructures. This architecture can offer an effective approach for advanced infrared optoelectronic devices.
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Affiliation(s)
- Yao Wen
- School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Peng He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Qisheng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Yu Zhang
- School of Physics and Technology , Wuhan University , Wuhan 430072 , China
| | - Sabir Hussain
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Chao Jiang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100190 , China
| | - Jun He
- School of Physics and Technology , Wuhan University , Wuhan 430072 , China
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8
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Sumikura H, Zhang G, Takiguchi M, Takemura N, Shinya A, Gotoh H, Notomi M. Mid-Infrared Lasing of Single Wurtzite InAs Nanowire. NANO LETTERS 2019; 19:8059-8065. [PMID: 31638818 DOI: 10.1021/acs.nanolett.9b03249] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 μm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.
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Affiliation(s)
- Hisashi Sumikura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Guoqiang Zhang
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Naotomo Takemura
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Akihiko Shinya
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
- Nanophotonics Center , Nippon Telegraph and Telephone Corporation , Atsugi , Kanagawa 243-0198 , Japan
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9
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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10
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Ren D, Meng X, Rong Z, Cao M, Farrell AC, Somasundaram S, Azizur-Rahman KM, Williams BS, Huffaker DL. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p- n Heterojunctions. NANO LETTERS 2018; 18:7901-7908. [PMID: 30444964 DOI: 10.1021/acs.nanolett.8b03775] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays on InP substrates, forming InAs-InP heterojunctions. We measure a rectification ratio greater than 300 at room temperature, which indicates a desirable diode performance. The dark current density, normalized to the area of nanowire heterojunctions, is 130 mA/cm2 at a temperature of 300 K and a reverse bias of 0.5 V, making it comparable to the state-of-the-art bulk InAs p- i- n photodiodes. An analysis of the Arrhenius plot of the dark current at reverse bias yields an activation energy of 175 meV from 190 to 300 K, suggesting that the Shockley-Read-Hall (SRH) nonradiative current is the primary contributor to the dark current. By using three-dimensional electrical simulations, we determine that the SRH nonradiative current originates from the acceptor-like surface traps at the nanowire-passivation heterointerfaces. The spectral response at room temperature is also measured, with a clear photodetection signature observed at wavelengths up to 2.5 μm. This study provides an understanding of dark current for small band gap selective-area nanowires and paves the way to integrate these improved nanostructured photoabsorbers on large band gap substrates for high-performance photodetectors at SWIR.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiao Meng
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Zixuan Rong
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Minh Cao
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Alan C Farrell
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Siddharth Somasundaram
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Khalifa M Azizur-Rahman
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
| | - Benjamin S Williams
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Diana L Huffaker
- Department of Electrical and Computer Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States
- School of Physics and Astronomy , Cardiff University , Cardiff , Wales CF24 3AA , United Kingdom
- California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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Zhang Y, Zheng H, Wang Q, Cong C, Hu L, Tian P, Liu R, Zhang SL, Qiu ZJ. Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800691. [PMID: 29766647 DOI: 10.1002/smll.201800691] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2018] [Revised: 03/29/2018] [Indexed: 06/08/2023]
Abstract
Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.
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Affiliation(s)
- Youwei Zhang
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
- Solid-State Electronics, The Ångström Laboratory, Uppsala University, Box 534, SE-751 21, Uppsala, Sweden
| | - Hemei Zheng
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Qiyuan Wang
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Chunxiao Cong
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Laigui Hu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Pengfei Tian
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Ran Liu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Shi-Li Zhang
- Solid-State Electronics, The Ångström Laboratory, Uppsala University, Box 534, SE-751 21, Uppsala, Sweden
| | - Zhi-Jun Qiu
- State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
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12
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Ren D, Scofield AC, Farrell AC, Rong Z, Haddad MA, Laghumavarapu RB, Liang B, Huffaker DL. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. NANOSCALE 2018; 10:7792-7802. [PMID: 29663009 DOI: 10.1039/c8nr01908h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Time-resolved photoluminescence (TRPL) has been implemented experimentally to measure the carrier lifetime of semiconductors for decades. For the characterization of nanowires, the rich information embedded in TRPL curves has not been fully interpreted and meaningfully mapped to the respective material properties. This is because their three-dimensional (3-D) geometries result in more complicated mechanisms of carrier recombination than those in thin films and analytical solutions cannot be found for those nanostructures. In this work, we extend the intrinsic power of TRPL by developing a full 3-D transient model, which accounts for different material properties and drift-diffusion, to simulate TRPL curves for nanowires. To show the capability of the model, we perform TRPL measurements on a set of GaAs nanowire arrays grown on silicon substrates and then fit the measured data by tuning various material properties, including carrier mobility, Shockley-Read-Hall recombination lifetime, and surface recombination velocity at the GaAs-Si heterointerface. From the resultant TRPL simulations, we numerically identify the lifetime characteristics of those material properties. In addition, we computationally map the spatial and temporal electron distributions in nanowire segments and reveal the underlying carrier dynamics. We believe this study provides a theoretical foundation for interpretation of TRPL measurements to unveil the complex carrier recombination mechanisms in 3-D nanostructured materials.
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Affiliation(s)
- Dingkun Ren
- Department of Electrical and Computer Engineering, University of California at Los Angeles, Los Angeles, California 90095, USA.
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Sarkar K, Palit M, Guhathakurata S, Chattopadhyay S, Banerji P. Single In x Ga 1-x As nanowire/p-Si heterojunction based nano-rectifier diode. NANOTECHNOLOGY 2017; 28:385202. [PMID: 28696342 DOI: 10.1088/1361-6528/aa7f19] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.
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Affiliation(s)
- K Sarkar
- Materials Science Centre, Indian Institute of Technology, Kharagpur, 721302, India
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Malheiros-Silveira GN, Bhattacharya I, Deshpande SV, Skuridina D, Lu F, Chang-Hasnain CJ. Room-temperature Fabry-Perot resonances in suspended InGaAs/InP quantum-well nanopillars on a silicon substrate. OPTICS EXPRESS 2017; 25:271-277. [PMID: 28085820 DOI: 10.1364/oe.25.000271] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present a new platform based on suspended III-V semiconductor nanopillars for direct integration of optoelectronic devices on a silicon substrate. Nanopillars grown in core-shell mode with InGaAs/InP quantum wells can support long-wavelength Fabry-Pérot resonances at room temperature with this novel configuration. Experimental results are demonstrated at a silicon-transparent wavelength of 1460 nm, facilitating integration with silicon platform.
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Fang H, Hu W, Wang P, Guo N, Luo W, Zheng D, Gong F, Luo M, Tian H, Zhang X, Luo C, Wu X, Chen P, Liao L, Pan A, Chen X, Lu W. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire. NANO LETTERS 2016; 16:6416-6424. [PMID: 27598791 DOI: 10.1021/acs.nanolett.6b02860] [Citation(s) in RCA: 58] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.
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Affiliation(s)
- Hehai Fang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Weida Hu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Peng Wang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Nan Guo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Wenjin Luo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Dingshan Zheng
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Fan Gong
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Man Luo
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Hongzheng Tian
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Xutao Zhang
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Chen Luo
- Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China
| | - Xing Wu
- Key Laboratory of Polar Materials and Devices of MOE, East China Normal University , Shanghai 200241, China
| | - Pingping Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University , Wuhan 430072, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronics, Hunan University , Changsha 410082, China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
- University of Chinese Academy of Sciences , Beijing 100049, China
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