Strain Loading Mode Dependent Bandgap Deformation Potential in ZnO Micro/Nanowires

Strain-Modulated and Nanorod-Waveguided Fluorescence in Single Zinc Oxide Nanorod-Based Immunodetection

Mechanical strain has been shown to be a versatile and tunable means to control various properties of nanomaterials. In this work, we investigate how strain applied to individual ZnO nanorods (NRs) can affect the fluorescence signals originated from external sources of bioanalytes, which are subsequently coupled and guided onto the NRs. Specifically, we determine how factors such as the NR length and protein concentration can influence the strain-induced changes in the waveguided fluorescence intensity along the NRs. We employ a protein of tumor necrosis factor-α (TNF-α) and a fluorophore-labeled antibody in a model immunoassay reaction, after which Alexa488-TNF-α immunocomplex is formed on ZnO NRs. We elucidate the relationships between the types as well as amounts of strain on the NRs and the fluorescence intensity originated from the Alexa488-TNF-α immunocomplexes. We show that tensile (compressive) strain applied to the NR leads to an increase (decrease) in the waveguided fluorescence signals. By assessing important optical phenomena such as fluorescence intensification on nanorod ends (FINE) and degree of FINE (DoF), we confirm their linear dependence with both the types and amounts of strain. Furthermore, the strain-induced changes in both FINE and DoF are found to be independent of protein concentration. We determine that NR length plays a critical role in obtaining high strain-dependence of the measured fluorescence signals. Particularly, we ascertain that longer NRs yield larger changes in both FINE and DoF in response to the applied strain, relative to shorter ones. In addition, longer NRs permit higher linear correlation between the protein concentration and the waveguided fluorescence intensity. These outcomes provide valuable insight into exploiting strain to enhance the detection of optical signals from bioanalytes, thus enabling their quantifications even at ultra-trace levels. Coupled with the use of individual ZnO NRs demonstrated in our measurements, this work may contribute to the development of a miniaturized, highly sensitive biosensor whose signal transduction is best optimized by the application of strain.

Elucidation of Strain-Dependent, Zinc Oxide Nanorod Response for Nanorod-Guided Fluorescence Intensity

In this work, we examine how strain exerted on individual ZnO nanorods (NRs) can influence the fluorescence signals that are emitted from fluorophore molecules and subsequently coupled into and guided along the NR. We elucidate the relationships between the incremental levels of compressive and tensile strain on the NRs and measured fluorescence intensity of a model fluorophore, rhodamine 6G (R6G), as a function of the position on the NRs. We reveal that compressive strain on the NRs leads to a decrease in the guided fluorescence signal, while tensile strain leads to an increase in the fluorescence intensity. Compared to an unstrained state, approximately 35% decrease (increase) in R6G fluorescence intensity was observed from ZnO NRs when they were under compressive strain of -14% (tensile strain of +10%). Further, our systematic acquisition of the incremental addition of uniaxial strain result in a linear relationship of the coupled fluorescence signal and the amount of applied strain. The degree of fluorescence intensification on nanorod ends (DoF), which is a quantitative indicator for the amount of R6G signals coupled into and waveguided to the NR ends compared to those on the main body, also exhibits a linear relationship with strain. These outcomes, in turn, demonstrate that strain alters the waveguiding capabilities of ZnO NRs in a predictable manner, which can be exploited to modulate and optimize fluorescence and other light signals emitted by a nearby source. Considering the wide utility of ZnO NRs in photonics, optoelectronics, and sensors, insights from our study may be highly valuable to effectively controlling and enhancing optical signals from chemical and biological analytes through strain.

Plasmonic enhanced piezoelectric photoresponse with flexible PVDF@Ag-ZnO/Au composite nanofiber membranes

The coordination of piezoelectric and plasmonic effects to regulate the separation and migration of photo-generated carriers is still a significant method to improve the performance of visible-light photoresponse. Herein, we propose the PVDF@Ag-ZnO/Au composite nanofiber membranes utilizing the piezoelectric and plasmonic effects to promote the photocatalytic degradation of organic dyes. Here, ZnO nanorods can generate a built-in electric field under vibration to separate electron-hole pairs. The Schottky junction formed by noble metal/semiconductor can not only inhibit the recombination of photo-generated carriers and accelerate the migration of carriers, but also enhance the utilization of visible light. In addition, the structure has excellent flexibility and easy recycling characteristics. We demonstrate that the plasmonic effect of noble metal can enhance the light response of membranes and broaden light absorption from ultraviolet to visible light region. With the help of the surface-enhanced Raman scattering (SERS), modulation effects of the piezoelectric effect on light response is proved. For catalytic processes, rhodamine B (98.8%) can be almost completely degraded using PVDF@Ag-ZnO/Au within 120 minutes in the piezoelectric photocatalysis process, which is 2.2 and 2.8 times higher than photocatalysis and piezoelectric catalysis, respectively. This work provides a promising strategy for harnessing solar and mechanical energy.

Dynamically regulated electroluminescence via strain engineering

Dynamic regulation of the light-emission wavelength has important scientific significance for developing new electroluminescent devices and expanding the application scope to the fields of lighting, display, sensing, and human-machine interaction. In this work, an electroluminescent device with a dynamically tunable emission wavelength is achieved based on the piezoresistive effect. The tunable range can reach up to 12 nm as the external strain increases from 0% to 0.148%. Also, the luminescence mechanism of the device is systematically analyzed, and is shown to be mainly due to the transition of electrons in the ground state to the excitation state caused by thermal tunneling excitation with the participation of multi-phonons. The shift of the emission wavelength originates from the narrowing of the energy band structure under the tensile strain and the change of the crystal field around the defect centers. This work provides a new, to the best of our knowledge, strategy for the development of wavelength-tunable light-emitting devices.

The Deformation Behavior and Bending Emissions of ZnO Microwire Affected by Deformation-Induced Defects and Thermal Tunneling Effect

The realization of electrically pumped emitters at micro and nanoscale, especially with flexibility or special shapes is still a goal for prospective fundamental research and application. Herein, zinc oxide (ZnO) microwires were produced to investigate the luminescent properties affected by stress. To exploit the initial stress, room temperature in situ elastic bending stress was applied on the microwires by squeezing between the two approaching electrodes. A novel unrecoverable deformation phenomenon was observed by applying a large enough voltage, resulting in the formation of additional defects at bent regions. The electrical characteristics of the microwire changed with the applied bending deformation due to the introduction of defects by stress. When the injection current exceeded certain values, bright emission was observed at bent regions, ZnO microwires showed illumination at the bent region priority to straight region. The bent emission can be attributed to the effect of thermal tunneling electroluminescence appeared primarily at bent regions. The physical mechanism of the observed thermoluminescence phenomena was analyzed using theoretical simulations. The realization of electrically induced deformation and the related bending emissions in single microwires shows the possibility to fabricate special-shaped light sources and offer a method to develop photoelectronic devices.

Strain-modulated high-quality ZnO cavity modes on different crystal orientations

Dynamically regulated coherent light emission offers a significant impact on improving white light generation, optical communication, on-chip photonic integration, and sensing. Here, we have demonstrated two mechanisms of strain-induced dynamic regulation of ZnO lasing modes through an individual ZnO microbelt and microrod prepared by vapor-phase transport method. We systematically explained the dependence on externally applied strain and crystal orientation. Compared with the reduced size of resonant cavity played a major role in the microbelt, the resonant wavelength variation of the microrod under tensile stress is affected by the change in both the cavity size and the refractive index, which tends to antagonize in the direction of movement. It shows that the refractive index can be effectively regulated only when the stress is in the same direction along the c-axis. The results on the linear relationship between the resonance wavelength variation and applied strain imply the capacity of the devices to detect tiny stresses due to the ultra-narrow line width of the cavity mode with a high-quality factor of ∼10⁴. It not only has a positive influence in the field of the modulated coherent light source, but also provides a feasible strategy for implementing color-resolved non-contact strain sensors.

Strong visible photoluminescence emission of ZnO nanosheets and nanoflowers by a facile hydrothermal route

Zinc oxide nanostructures such as nanosheets (NS) and nanoflowers (NF) were obtained by a facile hydrothermal synthesis using zinc chloride (ZnCl₂) as precursor with low molar concentrations and a short synthesis time (2 h) at 200 °C. By means of X-ray diffraction and Raman spectroscopy measurements, the wurtzite-type ZnO structure was confirmed with high crystalline quality. SEM micrographs showed the influence of ZnCl₂ concentration on ZnO morphology; ZnO NF were obtained at low concentrations (0.02 and 0.05 M), while ZnO NS were seen for higher concentrations (0.2-0.6 M) and their thicknesses can be estimated from 15 to 60 nm. In addition, TEM images showed a large number of pores with sizes below 15 nm in both ZnO nanostructures. Raman and photoluminescence displayed the surface defects density for ZnO nanostructures. Raman spectra showed the E₁(LO) mode localized at ∼581 cm^-1, associated with oxygen vacancies and zinc interstitials, being more intense for ZnO NF, while photoluminescence results showed a strong yellow-orange emission (centered from 587 to 618 nm) relative to UV emission, being more intense for ZnO NF. These properties reveal further potential for high performance luminescent devices based on ZnO NF and NS.

Reducing Electronic Transport Dimension to Topological Hinge States by Increasing Geometry Size of Dirac Semimetal Josephson Junctions

The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd_{3}As_{2} is predicted to be a higher-order topological semimetal, possessing three-dimensional bulk Dirac fermions, two-dimensional Fermi arcs, and one-dimensional hinge states. These topological states have different characteristic length scales in electronic transport, allowing one to distinguish their properties when changing sample size. Here, we report an anomalous dimensional reduction of supercurrent transport by increasing the size of Dirac semimetal Cd_{3}As_{2}-based Josephson junctions. An evolution of the supercurrent quantum interferences from a standard Fraunhofer pattern to a superconducting quantum interference device (SQUID)-like one is observed when the junction channel length is increased. The SQUID-like interference pattern indicates the supercurrent flowing through the 1D hinges. The identification of 1D hinge states should be valuable for deeper understanding of the higher-order topological phase in a 3D Dirac semimetal.

Crystal-Orientation-Related Dynamic Tuning of the Lasing Spectra of CdS Nanobelts by Piezoelectric Polarization

Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.

Controllable Growth of Aligned Monocrystalline CsPbBr3 Microwire Arrays for Piezoelectric-Induced Dynamic Modulation of Single-Mode Lasing

CsPbBr₃ shows great potential in laser applications due to its superior optoelectronic characteristics. The growth of CsPbBr₃ wire arrays with well-controlled sizes and locations is beneficial for cost-effective and largely scalable integration into on-chip devices. Besides, dynamic modulation of perovskite lasers is vital for practical applications. Here, monocrystalline CsPbBr₃ microwire (MW) arrays with tunable widths, lengths, and locations are successfully synthesized. These MWs could serve as high-quality whispering-gallery-mode lasers with high quality factors (>1500), low thresholds (<3 µJ cm^-2 ), and long stability (>2 h). An increase of the width results in an increase of the laser quality and the resonant mode number. The dynamic modulation of lasing modes is achieved by a piezoelectric polarization-induced refractive index change. Single-mode lasing can be obtained by applying strain to CsPbBr₃ MWs with widths between 2.3 and 3.5 µm, and the mode positions can be modulated dynamically up to ≈9 nm by changing the applied strain. Piezoelectric-induced dynamic modulation of single-mode lasing is convenient and repeatable. This method opens new horizons in understanding and utilizing the piezoelectric properties of lead halide perovskites in lasing applications and shows potential in other applications, such as on-chip strain sensing.

Piezoelectric Effect Tuning on ZnO Microwire Whispering-Gallery Mode Lasing

We report a dynamic tuning on coherent light emission wavelengths of single ZnO microwire by using the piezoelectric effect. Owing to the dominant role occupied by the piezoelectric polarization effect in the wurtzite-structure ZnO microwire, the effective dielectric constant (or refraction index) of the gain media was modulated toward an increasing trend by applying a tensile strain, resulting in a shift of the strain-mediated whispering-gallery mode (WGM) lasing at room temperature. Also, the strain required to resolve the spectra in the two operating types of PL and lasing were systematically analyzed and compared. Because of the narrow line width in the lasing mode, the strain-dependent spectral resolution was improved by an order of magnitude, making it feasible for achieving high-precision, ultrasensitive, and noncontact stress sensing. Our results have an important impact on laser modulation, optical communication, and optical sensing technology.

Dynamical Tuning of Nanowire Lasing Spectra

Realizing visionary concepts of integrated photonic circuits, nanospectroscopy, and nanosensing will tremendously benefit from dynamically tunable coherent light sources with lateral dimensions on the subwavelength scale. Therefore, we demonstrate an individual nanowire laser based device which can be gradually tuned by reversible length changes of the nanowire such that uniaxial tensile stress is applied to the respective semiconductor gain material. By straining the device, the spontaneous excitonic emission of the nanowire shifts to lower energies caused by the bandgap reduction of the semiconductor. Moreover, the optical gain spectrum of the nanolaser can be precisely strain-tuned in the high excitation regime. The tuning of the emission does not affect the laser threshold of the device, which is very beneficial for practical applications. The applied length change furthermore adjusts the laser resonances inducing a redshift of the longitudinal modes. Thus, this concept of gradually and dynamically tunable nanolasers enables controlling and modulating the coherent emission on the nanoscale without changing macroscopic ambient conditions. This concept holds therefore huge impact on nanophotonic switches and photonic circuit technology.

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10¹⁶/1.71 × 10¹⁶ cm·Hz^1/2/W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence

Photoelectrical properties of semiconductor nanostructures are expected to be improved significantly by strain engineering. Besides the local strain, the strain gradient is promising to tune the luminescence properties by modifying the crystal symmetry. Here, we report the investigation of strain-gradient induced symmetry-breaking effect on excitonic states in pure bending ZnO microwires by high spatial-resolved cathodoluminescence at low temperature of 80 K. In addition to the local-strain induced light emission peak shift, the bound exciton emission photon energy shows an extraordinary jump of ∼16.6 meV at a high strain-gradient of 1.22% μm^-1, which is ascribed to the strain gradient induced symmetry-breaking. Such a symmetry-breaking lifts the energy degeneracy of the electronic band structures, which significantly modifies the electron-hole interactions and the fine structures of the bound exciton states. These results provide a further understanding of the strain gradient effect on the excitonic states and possess a potential for the applications in optoelectronic devices.

Emission energy, exciton dynamics and lasing properties of buckled CdS nanoribbons

We report the modulation of emission energy, exciton dynamics and lasing properties in a single buckled CdS nanoribbon (NR) by strain-engineering. Inspired by ordered structure fabrication on elastomeric polymer, we develop a new method to fabricate uniform buckled NRs supported on polydimethylsiloxane (PDMS). Wavy structure, of which compressive and tensile strain periodically varied along the CdS NR, leads to a position-dependent emission energy shift as large as 14 nm in photoluminescence (PL) mapping. Both micro-PL and micro-reflectance reveal the spectral characteristics of broad emission of buckled NR, which can be understood by the discrepancy of strain-induced energy shift of A- and B-exciton of CdS. Furthermore, the dynamics of excitons under tensile strain are also investigated; we find that the B-exciton have much shorter lifetime than that of redshifted A-exciton. In addition, we also present the lasing of buckled CdS NRs, in which the strain-dominated mode selection in multi-mode laser and negligible mode shifts in single-mode laser are clearly observed. Our results show that the strained NRs may serve as new functional optical elements for flexible light emitter or on-chip all-optical devices.