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Gosling JH, Morozov SV, Vdovin EE, Greenaway MT, Khanin YN, Kudrynskyi Z, Patanè A, Eaves L, Turyanska L, Fromhold TM, Makarovsky O. Graphene FETs with high and low mobilities have universal temperature-dependent properties. NANOTECHNOLOGY 2023; 34:125702. [PMID: 36595273 DOI: 10.1088/1361-6528/aca981] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 12/07/2022] [Indexed: 06/17/2023]
Abstract
We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,Vg, for a series of monolayer graphene field effect transistors with mobilities,μ, ranging between 5000 and 250 000 cm2V-1s-1at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relationμ=4/eδnmaxfor all devices, whereρmaxis the resistivity maximum at the neutrality point andδnis an 'uncertainty' in the bipolar carrier density, given by the full width at half maximum of the resistivity peak expressed in terms of carrier density,n. This relation is consistent with thermal broadening of the carrier distribution and the presence of the disordered potential landscape consisting of so-called electron-hole puddles near the Dirac point. To demonstrate its utility, we combine this relation with temperature-dependent linearised Boltzmann transport calculations that include the effect of optical phonon scattering. This approach demonstrates the similarity in the temperature-dependent behaviour of carriers in different types of single layer graphene transistors with widely differing carrier mobilities. It can also account for the relative stability, over a wide temperature range, of the measured carrier mobility of each device.
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Affiliation(s)
- Jonathan H Gosling
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
- Centre for Additive Manufacturing, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Sergey V Morozov
- Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia
| | - Evgenii E Vdovin
- Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia
| | - Mark T Greenaway
- Department of Physics, Loughborough University, Loughborough, LE11 3TU, United Kingdom
| | - Yurii N Khanin
- Institute of Microelectronics Technology RAS, Chernogolovka 142432, Russia
| | - Zakhar Kudrynskyi
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Amalia Patanè
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Laurence Eaves
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Lyudmila Turyanska
- Centre for Additive Manufacturing, Faculty of Engineering, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - T Mark Fromhold
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
| | - Oleg Makarovsky
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom
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Navamani K, Rajkumar K. Generalization on Entropy-Ruled Charge and Energy Transport for Organic Solids and Biomolecular Aggregates. ACS OMEGA 2022; 7:27102-27115. [PMID: 35967056 PMCID: PMC9366796 DOI: 10.1021/acsomega.2c01118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2022] [Accepted: 07/13/2022] [Indexed: 05/27/2023]
Abstract
Herein, a generalized version of the entropy-ruled charge and energy transport mechanism for organic solids and biomolecular aggregates is presented. The effects of thermal disorder and electric field on electronic transport in molecular solids have been quantified by entropy, which eventually varies with respect to the typical disorder (static or dynamic). Based on our previous differential entropy (h s )-driven charge transport method, we explore the nonsteady carrier energy flux principle for soft matter systems from small organic solids to macrobiomolecular aggregates. Through this principle, the synergic nature of charge and energy transport in different organic systems is addressed. In this work, entropy is the key parameter to classify whether the carrier dynamics is in a nonsteady or steady state. Besides that, we also propose the formulation for unifying the hopping and band transport, which provides the relaxation time-hopping rate relation and the relaxation time-effective mass ratio. The calculated disorder drift time (or entropy-weighted carrier drift time) for hole transport in an alkyl-substituted triphenylamine (TPA) molecular device is 9.3 × 10-7 s, which illustrates nuclear dynamics-coupled charge transfer kinetics. The existence of nonequilibrium transport is anticipated while the carrier dynamics is in the nonsteady state, which is further examined from the rate of traversing potential in octupolar molecules. Our entropy-ruled Einstein model connects the adiabatic band and nonadiabatic hopping transport mechanisms. The logarithmic current density at different electric field-assisted site energy differences provides information about the typical transport (whether trap-free diffusion or trap-assisted recombination) in molecular devices, which reflects in the Navamani-Shockley diode equation.
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Affiliation(s)
- Karuppuchamy Navamani
- Department
of Physics, Centre for Research and Development
(CFRD), KPR Institute of Engineering and Technology, Coimbatore 641407, India
| | - Kanakaraj Rajkumar
- Department
of Physics, Indian Institute of Technology
Madras, Chennai 600036, India
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Spivak M, de Graaf C, Arcisauskaite V, López X. Gating the conductance of extended metal atom chains: a computational analysis of Ru 3(dpa) 4(NCS) 2 and [Ru 3(npa) 4(NCS) 2]. Phys Chem Chem Phys 2021; 23:14836-14844. [PMID: 34212973 DOI: 10.1039/d1cp02429a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The effects of a gate potential on the conductance of two members of the EMAC family, Ru3(dpa)4(NCS)2 and its asymmetric analogue, [Ru3(npa)4(NCS)2]+, are explored with a density functional approach combined with non-equilibrium Green's functions. From a computational perspective, the inclusion of an electrochemical gate potential represents a significant challenge because the periodic treatment of the electrode surface resists the formation of charged species. However, it is possible to mimic the effects of the electrochemical gate by including a very electropositive or electronegative atom in the unit cell that will effectively reduce or oxidize the molecule under study. In this contribution we compare this approach to the more conventional application of a solid-state gate potential, and show that both generate broadly comparable results. For two extended metal atom chain (EMAC) compounds, Ru3(dpa)4(NCS)2 and [Ru3(npa)4(NCS)2], we show that the presence of a gate potential shifts the molecular energy levels in a predictable way relative to the Fermi level, with distinct peaks in the conductance trace emerging as these levels enter the bias window.
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Affiliation(s)
- Mariano Spivak
- Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QZ, UK and Universitat Rovira I Virgili, Departament de Química Física i Inorgànica, Marcel·lí Domingo 1, 43007 Tarragona, Spain.
| | - Coen de Graaf
- Universitat Rovira I Virgili, Departament de Química Física i Inorgànica, Marcel·lí Domingo 1, 43007 Tarragona, Spain. and Institució Catalana de Recerca i Estudis Avançats (ICREA), Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Vaida Arcisauskaite
- Department of Chemistry, University of Oxford, South Parks Road, Oxford OX1 3QZ, UK
| | - Xavier López
- Universitat Rovira I Virgili, Departament de Química Física i Inorgànica, Marcel·lí Domingo 1, 43007 Tarragona, Spain.
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Yin J, Cong L, Liu Y, Wang P, Ma W, Zhu JL, Jiang K, Zhang W, Sun JL. Superionic Modulation of Polymethylmethacrylate-Assisted Suspended Few-Layer Graphene Nanocomposites for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:7600-7606. [PMID: 30698004 DOI: 10.1021/acsami.8b21055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Graphene is receiving significant attention for use in optoelectronic devices because it exhibits a wide range of desirable electrical properties. Although modified graphene that is fabricated on quantum dots (or similar integration strategies) has shown promise, it has not met the requirements for high-speed applications and highly sensitive detection. Herein, we report ion-modulated graphene composite nanostructures that were incorporated into photodetectors. We focus on the dynamical properties of the novel photodetectors, and they exhibit extraordinary photoelectric performances (photoresponsivity ∼1 A/W, response time ∼100 μs) over a broad range of wavelengths from 405 to 1064 nm (the maximum external quantum efficiency is greater than 300% at 635 nm with a 10 kHz chopping frequency). A theoretical model is proposed in this paper, and it is in good agreement with our experimental results. The dynamic analyses further confirmed the dissociation and recombination of ion-electron bound states to be responsible for the fast and sensitive photoresponse from the composite samples. Although ion-modulated optoelectronic nanomaterials are rarely studied, they require further exploration as they offer new insights and alternatives in nanomaterial research.
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Affiliation(s)
- Jun Yin
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | | | - Yu Liu
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Pengfei Wang
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Wanyun Ma
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | | | - Kaili Jiang
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
| | - Wei Zhang
- Institute of Applied Physics and Computational Mathematics , P. O. Box 8009 (28), Beijing 100088 , China
| | - Jia-Lin Sun
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China
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