Building Large-Domain Twisted Bilayer Graphene with van Hove Singularity

Observation of Chirality Transfer in Twisted Few-Layer Graphene

Chiral materials are the focus of research in a variety of fields such as chiroptical sensing, biosensing, catalysis, and spintronics. Twisted two-dimensional (2D) materials are rapidly developing into a class of atomically thin chiral materials that can be effectively modulated through interlayer twist. However, chirality transfer in chiral 2D materials has not been reported. Here, we show that the chirality from the twist interface of graphene can directly transfer to achiral few-layer graphene and lead to a strong chiroptical response probed with circularly polarized Raman spectroscopy. Distinct Raman optical activity (ROA) for the interlayer shear modes in achiral few-layer graphene is observed, with the degree of polarization reaching as high as 0.5. These findings demonstrate the programmability of chiroptical response through stacking and twist engineering in 2D materials and offer insights into the transfer of chirality in atomically thin chiral materials for optical and electronic applications.

Waveguide-integrated twisted bilayer graphene photodetectors

Graphene photodetectors have exhibited high bandwidth and capability of being integrated with silicon photonics (SiPh), holding promise for future optical communication devices. However, they usually suffer from a low photoresponsivity due to weak optical absorption. In this work, we have implemented SiPh-integrated twisted bilayer graphene (tBLG) detectors and reported a responsivity of 0.65 A W-1 for telecom wavelength 1,550 nm. The high responsivity enables a 3-dB bandwidth of >65 GHz and a high data stream rate of 50 Gbit s-1. Such high responsivity is attributed to the enhanced optical absorption, which is facilitated by van Hove singularities in the band structure of high-mobility tBLG with 4.1o twist angle. The uniform performance of the fabricated photodetector arrays demonstrates a fascinating prospect of large-area tBLG as a material candidate for heterogeneous integration with SiPh.

Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications

Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.

Preparation, properties and applications of two-dimensional superlattices

As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene

To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moiré potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a 2.4°-twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to "tear-and-stack" exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly.

Self-Trapped Interlayer Excitons in van der Waals Heterostructures

The self-trapped state (STS) of the interlayer exciton (IX) has aroused enormous interest owing to its significant impact on the fundamental properties of the van der Waals heterostructures (vdWHs). Nevertheless, the microscopic mechanisms of STS are still controversial. Herein, we study the corrections of the binding energies of the IXs stemming from the exciton-interface optical phonon coupling in four kinds of vdWHs and find that these IXs are in the STS for the appropriate ratio of the electron and hole effective masses. We show that these self-trapped IXs could be classified into type I with the increasing binding energy in the tens of millielectronvolts range, which are very agreement with the red-shift of the IX spectra in experiments, and type II with the decreasing binding energy, which provides a possible explanation for the blue-shift and broad line width of the IX's spectra at low temperatures. Moreover, these two types of exciton states could be transformed into each other by adjusting the structural parameters of vdWHs. These results not only provide an in-depth understanding for the self-trapped mechanism but also shed light on the modulations of IXs in vdWHs.

Rotation of Graphene on Cu during Chemical Vapor Deposition and Its Application to Control the Stacking Angle of Bilayer Graphene

Control of the stacking angle (θ_S) of bilayer graphene (BLG) is essential for fundamental studies and applications of BLG. Especially, the use of chemical vapor deposition (CVD) to grow high-quality BLG requires this control, but methods to achieve it are not available. Here, we found that graphene rotates during the CVD process, and this action can be exploited as a new strategy to control θ_S. The rotation of graphene was revealed by the population changes of AB-stacked BLG and 30°-twisted BLG upon the growth time change; this change can only be explained by rotation of graphene. The rotation is largely affected by the edge state of graphene which can be tuned by growth temperature. The rotation was observed through experimental results combined with theoretical calculation. The rotation can be blocked or accelerated by controlling the growth temperature, by which highly selective growth of AB-stacked BLG or 30°-twisted BLG can be achieved.

Influence of Twist-Angle and Concentration Disorder on the Density of Electronic States of Twisted Graphene

In this paper, we present an approach that makes it possible to describe, from unified physical considerations, the influence of rotation-angle and concentration disorder on the density of electronic states of two-layer twisted graphene. The electron relaxation time and the density of electronic states near the Fermi level are calculated by considering the multiple elastic scattering of electrons by impurities and structural inhomogeneities of the short-range order type. An analysis is presented of the change in the contributions to the density of electronic states from electron scattering on foreign atoms with variations in the defectiveness of the structure, impurity concentration, temperature, and the external electric field magnitude. It is shown that the formation of short-range order areas by foreign atoms in the first coordination sphere relative to the surface of the material can lead to the opening of a gap in the density of electronic states of twisted graphene. Point defects and short-range order regions formed by foreign atoms in the second coordination sphere lead to metallization of twisted graphene.

Surface Van Hove Singularity Enabled Efficient Catalysis in Low-Dimensional Systems: CO Oxidation and Hydrogen Evolution Reactions

Surface Van Hove singularity (SVHS) triggers exciting physical phenomena distinct from the bulk. Herein, we explore the potential role of SVHS in catalysis for both CO oxidation and the hydrogen evolution reaction (HER) using the graphene/Ca₂N (Gra/Ca₂N) heterojunction and Pt₂HgSe₃ (001) surface as prototype systems. It is demonstrated that both systems with SVHS could serve as an electron bath to promote O₂ adsorption and subsequent CO oxidation with low energy barriers of 0.2-0.6 eV for the Gra/Ca₂N and Pt₂HgSe₃ (001) surface and similarly facilitate the HER with near-zero hydrogen adsorption free energy. Importantly, the catalytically active sites associated with SVHS are well-defined and distributed over the whole surface plane, and further, the chemical reactivity of SVHS can also be tuned easily via adjusting its position with respect to E_F. Our study demonstrates the enabling power of SVHS and provides novel physical insights into the promising potential role of VHS in designing high-efficiency catalysts.

Tunnel barrier engineering of spin-polarized mild band gap vertical ternary heterostructures

The atomic and electronic structures and properties of advanced 2D ternary vertical spin-polarized semiconducting heterostructures based on mild band gap graphitic carbon nitride g-C₃N₄ and ferromagnetic single-layer CrI₃ fragments, namely CrI₃/g-C₃N₄/CrI₃ and g-C₃N₄/CrI₃/g-C₃N₄, were proposed and examined using the ab initio GGA PBE PBC technique. Both possible ferromagnetic (FM) and antiferromagnetic (AFM) spin ordering configurations of CrI₃/g-C₃N₄/CrI₃ were considered and found to be energetically degenerated, being significantly different in the density of states. Electronic structure calculations revealed that weak van der Waals interactions between the fragments are responsible for the main features of the atomic and electronic structures of both the types of heterostructures. The combination of flat valence and conduction bands and conductivity channels localized at spin-polarized semiconducting CrI₃ fragments makes proposed heterostructures as magnetic tunnel junctions for spin- and photo-related applications such as spintronics, magnetoresistive random-access memory, photocatalysis, and as elements for highly efficient spin-polarized photovoltaic nanodevices.

Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm² V^-1 s^-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Graphene adlayer growth between nonepitaxial graphene and the Ni(111) substrate: a theoretical study

Understanding the fundamentals of chemical vapor deposition bilayer graphene growth is crucial for its synthesis. By employing density functional theory calculations and classical molecular dynamics simulations, we have investigated the evolution of carbon structures and the kinetics of the adlayer graphene nucleation between the graphene top layer (GTL) and the Ni(111) substrate. Compared to the epitaxial GTL, the weaker interaction between the nonepitaxial GTL and the Ni(111) substrate makes the nucleation of the adlayer more favorable. Furthermore, the defects involving in the adlayer graphene are easier to be healed by adopting the nonepitaxial GTL. Our results agree well with the experimental observation and demonstrate that the adlayer graphene with a high quality can be grown underneath the nonepitaxial GTL on Ni-like substrates.

Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method

Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (h-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging. Here, we propose a simple and handy method to prepare atomically clean twisted bilayer graphene with controllable twist angles based on wetting-induced delamination. This method can transfer tBLG onto a patterned substrate, which offers an excellent platform for the observation of physical phenomena such as relaxation of moiré pattern in marginally tBLG. These findings and insight should ultimately guide the designable packaging and atomic characterization of the two-dimensional (2D) materials.

Pattern Pick and Place Method for Twisted Bi- and Multi-Layer Graphene

Twisted bi-layer graphene (tBLG) has attracted much attention because of its unique band structure and properties. The properties of tBLG vary with small differences in the interlayer twist angle, but it is difficult to accurately adjust the interlayer twist angle of tBLG with the conventional fabrication method. In this study, we introduce a facile tBLG fabrication method that directly picks up a single-crystalline graphene layer from a growth substrate and places it on another graphene layer with a pre-designed twist angle. Using this approach, we stacked single-crystalline graphene layers with controlled twist angles and thus fabricated tBLG and twisted multi-layer graphene (tMLG). The structural, optical and electrical properties depending on the twist angle and number of layers, were investigated using transmission electron microscopy (TEM), micro–Raman spectroscopy, and gate-dependent sheet resistance measurements. The obtained results show that the pick and place approach enables the direct dry transfer of the top graphene layer on the as-grown graphene to fabricate uniform tBLG and tMLG with minimal interlayer contamination and pre-defined twist angles.

Low-Temperature Heteroepitaxy of 2D PbI2 /Graphene for Large-Area Flexible Photodetectors

Heterostructures based on graphene and other 2D atomic crystals exhibit fascinating properties and intriguing potential in flexible optoelectronics, where graphene films function as transparent electrodes and other building blocks are used as photoactive materials. However, large-scale production of such heterostructures with superior performance is still in early stages. Herein, for the first time, the preparation of a submeter-sized, vertically stacked heterojunction of lead iodide (PbI2 )/graphene on a flexible polyethylene terephthalate (PET) film by vapor deposition of PbI2 on graphene/PET substrate at a temperature lower than 200 °C is demonstrated. This film is subsequently used to fabricate bendable graphene/PbI2 /graphene sandwiched photodetectors, which exhibit high responsivity (45 A W-1 cm-2 ), fast response (35 µs rise, 20 µs decay), and high-resolution imaging capability (1 µm). This study may pave a facile pathway for scalable production of high-performance flexible devices.

A Perspective on the Application of Spatially Resolved ARPES for 2D Materials

In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy

We developed a high-yield synthesis of highly crystalline bilayer graphene (BLG) with two preferential stacking modes using a Ni-Cu gradient alloy growth substrate. Previously reported approaches for BLG growth include flat growth substrates of Cu or Ni-Cu uniform alloys and "copper pocket" structures. Use of flat substrates has the advantage of being scalable, but the growth mechanism is either "surface limited" (for Cu) or carbon precipitation (for uniform Ni-Cu), which results in multicrystalline BLG grains. For copper pockets, growth proceeds through a carbon back-diffusion mechanism, which leads to the formation of highly crystalline BLG, but scaling of the copper pocket structure is expected to be difficult. Here we demonstrate a Ni-Cu gradient alloy that combines the advantages of these earlier methods: the substrate is flat, so easy to scale, while growth proceeds by a carbon back-diffusion mechanism leading to high-yield growth of BLG with high crystallinity. The BLG layer stacking was almost exclusively Bernal or twisted with an angle of 30°, consistent with first-principles calculations we conducted. Furthermore, we demonstrated scalable production of transistor arrays based crystalline Bernal-stacked BLG with a band gap that was tunable at room temperature.

Chemical and electronic structure imaging of graphene on Cu: a NanoARPES study

Electronic structure, which describes the distribution of electronic states in reciprocal space, is one of the most fundamental concepts in condensed matter physics, since it determines the electrical, optical and magnetic behaviours of materials. Graphene has great promise for both fundamental physics and future applications. Chemical vapour deposition (CVD) is currently the dominant technology for its scaled growth on metal foils. The polycrystalline nature of metal foil makes NanoARPES, one energy-momentum dispersion probe with spatial resolution down to a few tens of nanometers, a unique tool to study the intrinsic electronic structure of polycrystalline graphene films. In this topical review, we present the latest NanoARPES studies on graphene grains and films grown on copper foil by CVD. The comprehensive chemical and electronic images probed by NanoARPES provide deep insight about graphene and point out potential ways to functionalize graphene properties. This knowledge may stimulate us to look into the future of this field from both the material synthesis and the instrumental characterisation.

Stranski-Krastanov and Volmer-Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene

Aside from unusual properties of monolayer graphene, bilayer has been shown to have even more interesting physics, in particular allowing bandgap opening with dual gating for proper interlayer symmetry. Such properties, promising for device applications, ignited significant interest in understanding and controlling the growth of bilayer graphene. Here we systematically investigate a broad set of flow rates and relative gas ratio of CH₄ to H₂ in atmospheric pressure chemical vapor deposition of multilayered graphene. Two very different growth windows are identified. For relatively high CH₄ to H₂ ratios, graphene growth is relatively rapid with an initial first full layer forming in seconds upon which new graphene flakes nucleate then grow on top of the first layer. The stacking of these flakes versus the initial graphene layer is mostly turbostratic. This growth mode can be likened to Stranski-Krastanov growth. With relatively low CH₄ to H₂ ratios, growth rates are reduced due to a lower carbon supply rate. In addition bi-, tri-, and few-layer flakes form directly over the Cu substrate as individual islands. Etching studies show that in this growth mode subsequent layers form beneath the first layer presumably through carbon radical intercalation. This growth mode is similar to that found with Volmer-Weber growth and was shown to produce highly oriented AB-stacked materials. These systematic studies provide new insight into bilayer graphene formation and define the synthetic range where gapped bilayer graphene can be reliably produced.