Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2 Monolayers by Electron Diffraction

Layer-Stacking Sequence Governs Ion-Storage in Layered Double Hydroxides

In layered materials, the layer-stacking sequence allows the tuning of ion transport and storage properties by modulating the host-ion interactions. However, unlike in the case of cations, the relationship between the stacking sequence and anion transport and storage properties is less clearly understood. Herein, we demonstrate that the stacking sequence governs the nitrate-storage properties of layered double hydroxides (LDHs); the 2H₁ polytype enhances the nitrate-storage capacity to 400% of that of the 3R₁ polytype. A quartz crystal microbalance with dissipation monitoring combined with multimodal ex situ experiments indicated that the high ion-storage capacity of the 2H₁ polytype originates from the soft nature of LDHs lattices, which facilitates nitrate with minimal lattice changes. In contrast, the rigid lattice of the 3R₁ sequence requires a notably large lattice expansion, which is detrimental to ion storage. Our findings can aid the rational design of anion-host interaction-derived functionalities.

Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior

Vanadium diselenide (VSe₂) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe₂ on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe₂ with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.

Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS2 Monolayer Films

Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge. Using electron microscopy and ReaxFF reactive force field-based molecular dynamics simulations, we provide insights into WS₂ crystal growth mechanisms, providing a direct link between synthetic conditions and microstructure. Dark-field TEM imaging of coalesced monolayer WS₂ films illuminates defect arrays that atomic-resolution STEM imaging identifies as translational grain boundaries. Electron diffraction and high-resolution imaging reveal that the films have nearly a single orientation with imperfectly stitched domains that tilt out-of-plane when released from the substrate. Imaging and ReaxFF simulations uncover two types of translational mismatch, and we discuss their origin related to relatively fast growth rates. Statistical analysis of >1300 facets demonstrates that microstructural features are constructed from nanometer-scale building blocks, describing the system across sub-Ångstrom to multimicrometer length scales.

Stabilization of metallic phases through formation of metallic/semiconducting lateral heterostructures

In this study, we develop a new approach for stabilization of metallic phases of monolayer MoS₂ through the formation of lateral heterostructures composed of semiconducting/metallic MoS₂. The structure of metallic (a mixture of T and T') and semiconducting (2H) phases was unambiguously characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, photoluminescence imaging, and transmission electron microscope observations. The amount of NaCl, reaction temperature, reaction time, and locations of substrates are essential for controlling the percentage of metallic/semiconducting phases in lateral heterostructures; loading a large amount of NaCl at low temperatures with short reaction times prefers metallic phases. The existence of the semiconducting phase in MoS₂ lateral heterostructures significantly enhances the stability of the metallic phases through passivation of reactive edges. The same approach can be applied to other transition metal dichalcogenides (TMDs), such as WS₂, leading to boosting of basic research and application of TMDs in metallic phases.

Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction

The inspection of Friedel's law in ultrafast electron diffraction (UED) is important to gain a comprehensive understanding of material atomic structure and its dynamic response. Here, monoclinic gallium telluride (GaTe), as a low-symmetry, layered crystal in contrast to many other 2D materials, is investigated by mega-electronvolt UED. Strong out-of-phase oscillations of Bragg peak intensities are observed for Friedel pairs, which does not obey Friedel's law. As evidenced by the preserved mirror symmetry and supported by both kinematic and dynamic scattering simulations, the intensity oscillations are provoked by the lowest-order longitudinal acoustic breathing phonon. Our results provide a generalized understanding of Friedel's law in UED and demonstrate that by designed misalignment of surface normal and primitive lattice vectors, coherent lattice wobbling and effective shear strain can be generated in crystal films by laser pulse excitation, which is otherwise hard to achieve and can be further utilized to dynamically tune and switch material properties.

Inlaid ReS2 Quantum Dots in Monolayer MoS2

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron confinement, for example, 0D quantum dots, for exotic physical properties. However, fabrication of such laterally confined monolayer (1L) nanostructure in 1L crystals remains challenging. Here we report the realization of 1L ReS₂ quantum dots epitaxially inlaid in 1L MoS₂ by a two-step chemical vapor deposition method combining with plasma treatment. The lateral lattice mismatch between ReS₂ and MoS₂ leads to size-dependent crystal structure evolution and in-plane straining of the 1L ReS₂ quantum dots. Optical spectroscopies reveal the abnormal charge transfer between the 1L ReS₂ quantum dots and the MoS₂ matrix, resulting from electron trapping in the 1L ReS₂ quantum dots. This study may shed light on the development of in-plane quantum-confined devices in 2D materials for potential applications in quantum information.

Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy

The presence of rich polymorphs and stacking polytypes in molybdenum disulfide (MoS₂ ) endows it with a diverse range of electrical, catalytic, optical, and magnetic properties. This has stimulated a lot of interest in the unique properties associated with each polymorph. Most techniques used for polymorph identification in MoS₂ are macroscopic techniques that sample averaged properties due to their limited spatial resolution. A reliable way of differentiating the atomic structure of different polymorphs is needed in order to understand their growth dynamics and establish the correlation between structure and properties. Herein, the use of electron microscopy for identifying the atomic structures of several important polymorphs in MoS₂ , some of which are the subjects of mistaken assignment in the literature, is discussed. In particular, scanning transmission electron microscopy-annular dark field imaging has emerged as the most effective and reliable approach for identifying the different phases in MoS₂ and other 2D materials because its images can be directly correlated to the atomic structures. Examples of the identification of polymorphs grown under different conditions in molecular beam epitaxy or chemical vapor deposition, for example, 3R, 1T, 1T'-phases, and 1T'-edges, are presented, including their atomic structures, fascinating properties, growth methods, and corresponding thermodynamic stabilities.

One-Dimensional Atomic Segregation at Semiconductor-Metal Interfaces of Polymorphic Transition Metal Dichalcogenide Monolayers

Interface segregation is a powerful approach to tailor properties of bulk materials by interface engineering. Nevertheless, little is known about the chemical inhomogeneity at interfaces of polymorphic two-dimensional transition metal dichalcogenides (TMDs) and its influence on the properties of the 2D materials. Here we report one-dimensional monatomic segregation at coherent semiconductor-metal 1H/1T interfaces of Mo-doped WS₂ monolayers. The monatomic interface segregation takes place at an intact transition metal plane and is associated with the topological defects caused by reflection symmetry breaking at the 1T/1H interfaces and the weak difference in bonding strength between Mo-S and W-S. This finding enriches our understanding of the interaction between topological defects and impurities in 2D crystals and enlightens a potential approach to manipulate the properties of 2D TMDs by local chemical modification and interface engineering for applications in 2D TMD electronic devices.

Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS2 Films

We employ atomically resolved and element-specific scanning transmission electron microscopy (STEM) to visualize in situ and at the atomic scale the crystallization and restructuring processes of two-dimensional (2D) molybdenum disulfide (MoS2) films. To this end, we deposit a model heterostructure of thin amorphous MoS2 films onto freestanding graphene membranes used as high-resolution STEM supports. Notably, during STEM imaging the energy input from the scanning electron beam leads to beam-induced crystallization and restructuring of the amorphous MoS2 into crystalline MoS2 domains, thereby emulating widely used elevated temperature MoS2 synthesis and processing conditions. We thereby directly observe nucleation, growth, crystallization, and restructuring events in the evolving MoS2 films in situ and at the atomic scale. Our observations suggest that during MoS2 processing, various MoS2 polymorphs co-evolve in parallel and that these can dynamically transform into each other. We further highlight transitions from in-plane to out-of-plane crystallization of MoS2 layers, give indication of Mo and S diffusion species, and suggest that, in our system and depending on conditions, MoS2 crystallization can be influenced by a weak MoS2/graphene support epitaxy. Our atomic-scale in situ approach thereby visualizes multiple fundamental processes that underlie the varied MoS2 morphologies observed in previous ex situ growth and processing work. Our work introduces a general approach to in situ visualize at the atomic scale the growth and restructuring mechanisms of 2D transition-metal dichalcogenides and other 2D materials.

Synthesizing 1T-1H Two-Phase Mo1-xWxS2 Monolayers by Chemical Vapor Deposition

1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.