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Sudare T, Ueda M, Yamaguchi T, Tipplook M, Tanaka H, Hayashi F, Teshima K. Layer-Stacking Sequence Governs Ion-Storage in Layered Double Hydroxides. J Phys Chem Lett 2023; 14:584-591. [PMID: 36633441 DOI: 10.1021/acs.jpclett.2c03553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In layered materials, the layer-stacking sequence allows the tuning of ion transport and storage properties by modulating the host-ion interactions. However, unlike in the case of cations, the relationship between the stacking sequence and anion transport and storage properties is less clearly understood. Herein, we demonstrate that the stacking sequence governs the nitrate-storage properties of layered double hydroxides (LDHs); the 2H1 polytype enhances the nitrate-storage capacity to 400% of that of the 3R1 polytype. A quartz crystal microbalance with dissipation monitoring combined with multimodal ex situ experiments indicated that the high ion-storage capacity of the 2H1 polytype originates from the soft nature of LDHs lattices, which facilitates nitrate with minimal lattice changes. In contrast, the rigid lattice of the 3R1 sequence requires a notably large lattice expansion, which is detrimental to ion storage. Our findings can aid the rational design of anion-host interaction-derived functionalities.
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Affiliation(s)
- Tomohito Sudare
- Research Initiative for Supra-Materials (RISM), Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Mizuki Ueda
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Takuro Yamaguchi
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Mongkol Tipplook
- Research Initiative for Supra-Materials (RISM), Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Hideki Tanaka
- Research Initiative for Supra-Materials (RISM), Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Fumitaka Hayashi
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
| | - Katsuya Teshima
- Research Initiative for Supra-Materials (RISM), Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
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2
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You J, Pan J, Shang SL, Xu X, Liu Z, Li J, Liu H, Kang T, Xu M, Li S, Kong D, Wang W, Gao Z, Zhou X, Zhai T, Liu ZK, Kim JK, Luo Z. Salt-Assisted Selective Growth of H-phase Monolayer VSe 2 with Apparent Hole Transport Behavior. NANO LETTERS 2022; 22:10167-10175. [PMID: 36475688 DOI: 10.1021/acs.nanolett.2c04133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jie Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Xiang Xu
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jingwei Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Mengyang Xu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shaobo Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Deqi Kong
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wenliang Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China
- CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China
| | - Xing Zhou
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Jang-Kyo Kim
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- The Hong Kong University of Science and Technology Shenzhen Research Institute, No. 9 Yuexing first RD, South Area Hi-tech Park, Nanshan, Shenzhen518057, China
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3
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Hernandez Ruiz K, Wang Z, Ciprian M, Zhu M, Tu R, Zhang L, Luo W, Fan Y, Jiang W. Chemical Vapor Deposition Mediated Phase Engineering for 2D Transition Metal Dichalcogenides: Strategies and Applications. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100047] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
Affiliation(s)
- Karla Hernandez Ruiz
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Ziqian Wang
- Department of Materials Science and Engineering Johns Hopkins University Baltimore MD 21218 USA
| | - Matteo Ciprian
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Meifang Zhu
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Rong Tu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Lianmeng Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China
| | - Wei Luo
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Yuchi Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
| | - Wan Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Institute of Functional Materials College of Materials Science and Engineering, Donghua University Shanghai 201620 China
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4
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Reifsnyder Hickey D, Nayir N, Chubarov M, Choudhury TH, Bachu S, Miao L, Wang Y, Qian C, Crespi VH, Redwing JM, van Duin ACT, Alem N. Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS 2 Monolayer Films. NANO LETTERS 2021; 21:6487-6495. [PMID: 34314181 DOI: 10.1021/acs.nanolett.1c01517] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant challenge. Using electron microscopy and ReaxFF reactive force field-based molecular dynamics simulations, we provide insights into WS2 crystal growth mechanisms, providing a direct link between synthetic conditions and microstructure. Dark-field TEM imaging of coalesced monolayer WS2 films illuminates defect arrays that atomic-resolution STEM imaging identifies as translational grain boundaries. Electron diffraction and high-resolution imaging reveal that the films have nearly a single orientation with imperfectly stitched domains that tilt out-of-plane when released from the substrate. Imaging and ReaxFF simulations uncover two types of translational mismatch, and we discuss their origin related to relatively fast growth rates. Statistical analysis of >1300 facets demonstrates that microstructural features are constructed from nanometer-scale building blocks, describing the system across sub-Ångstrom to multimicrometer length scales.
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Affiliation(s)
- Danielle Reifsnyder Hickey
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nadire Nayir
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmet University, Karaman 70000, Turkey
| | - Mikhail Chubarov
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tanushree H Choudhury
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leixin Miao
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yuanxi Wang
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chenhao Qian
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Vincent H Crespi
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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5
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Canton-Vitoria R, Hotta T, Liu Z, Inoue T, Kitaura R. Stabilization of metallic phases through formation of metallic/semiconducting lateral heterostructures. J Chem Phys 2020; 153:084702. [PMID: 32872864 DOI: 10.1063/5.0012782] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
In this study, we develop a new approach for stabilization of metallic phases of monolayer MoS2 through the formation of lateral heterostructures composed of semiconducting/metallic MoS2. The structure of metallic (a mixture of T and T') and semiconducting (2H) phases was unambiguously characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, photoluminescence imaging, and transmission electron microscope observations. The amount of NaCl, reaction temperature, reaction time, and locations of substrates are essential for controlling the percentage of metallic/semiconducting phases in lateral heterostructures; loading a large amount of NaCl at low temperatures with short reaction times prefers metallic phases. The existence of the semiconducting phase in MoS2 lateral heterostructures significantly enhances the stability of the metallic phases through passivation of reactive edges. The same approach can be applied to other transition metal dichalcogenides (TMDs), such as WS2, leading to boosting of basic research and application of TMDs in metallic phases.
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Affiliation(s)
| | - Takato Hotta
- Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
| | - Zheng Liu
- National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
| | - Tsukasa Inoue
- Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
| | - Ryo Kitaura
- Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan
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6
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Qian Q, Shen X, Luo D, Jia L, Kozina M, Li R, Lin MF, Reid AH, Weathersby S, Park S, Yang J, Zhou Y, Zhang K, Wang X, Huang S. Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction. ACS NANO 2020; 14:8449-8458. [PMID: 32538617 DOI: 10.1021/acsnano.0c02643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The inspection of Friedel's law in ultrafast electron diffraction (UED) is important to gain a comprehensive understanding of material atomic structure and its dynamic response. Here, monoclinic gallium telluride (GaTe), as a low-symmetry, layered crystal in contrast to many other 2D materials, is investigated by mega-electronvolt UED. Strong out-of-phase oscillations of Bragg peak intensities are observed for Friedel pairs, which does not obey Friedel's law. As evidenced by the preserved mirror symmetry and supported by both kinematic and dynamic scattering simulations, the intensity oscillations are provoked by the lowest-order longitudinal acoustic breathing phonon. Our results provide a generalized understanding of Friedel's law in UED and demonstrate that by designed misalignment of surface normal and primitive lattice vectors, coherent lattice wobbling and effective shear strain can be generated in crystal films by laser pulse excitation, which is otherwise hard to achieve and can be further utilized to dynamically tune and switch material properties.
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Affiliation(s)
- Qingkai Qian
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Duan Luo
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lanxin Jia
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Michael Kozina
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Renkai Li
- Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ming-Fu Lin
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Alexander H Reid
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Stephen Weathersby
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Suji Park
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jie Yang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Yu Zhou
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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7
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Wang Z, Luo R, Johnson I, Kashani H, Chen M. Inlaid ReS 2 Quantum Dots in Monolayer MoS 2. ACS NANO 2020; 14:899-906. [PMID: 31825587 DOI: 10.1021/acsnano.9b08186] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are prospective materials for quantum devices owing to their inherent 2D confinements. They also provide a platform to realize even lower-dimensional in-plane electron confinement, for example, 0D quantum dots, for exotic physical properties. However, fabrication of such laterally confined monolayer (1L) nanostructure in 1L crystals remains challenging. Here we report the realization of 1L ReS2 quantum dots epitaxially inlaid in 1L MoS2 by a two-step chemical vapor deposition method combining with plasma treatment. The lateral lattice mismatch between ReS2 and MoS2 leads to size-dependent crystal structure evolution and in-plane straining of the 1L ReS2 quantum dots. Optical spectroscopies reveal the abnormal charge transfer between the 1L ReS2 quantum dots and the MoS2 matrix, resulting from electron trapping in the 1L ReS2 quantum dots. This study may shed light on the development of in-plane quantum-confined devices in 2D materials for potential applications in quantum information.
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Affiliation(s)
- Ziqian Wang
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Ruichun Luo
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Isaac Johnson
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Hamzeh Kashani
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Mingwei Chen
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
- WPI Advanced Institute for Materials Research , Tohoku University , Sendai 980-8577 , Japan
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8
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Zhao X, Ning S, Fu W, Pennycook SJ, Loh KP. Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802397. [PMID: 30160317 DOI: 10.1002/adma.201802397] [Citation(s) in RCA: 45] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2018] [Revised: 05/31/2018] [Indexed: 06/08/2023]
Abstract
The presence of rich polymorphs and stacking polytypes in molybdenum disulfide (MoS2 ) endows it with a diverse range of electrical, catalytic, optical, and magnetic properties. This has stimulated a lot of interest in the unique properties associated with each polymorph. Most techniques used for polymorph identification in MoS2 are macroscopic techniques that sample averaged properties due to their limited spatial resolution. A reliable way of differentiating the atomic structure of different polymorphs is needed in order to understand their growth dynamics and establish the correlation between structure and properties. Herein, the use of electron microscopy for identifying the atomic structures of several important polymorphs in MoS2 , some of which are the subjects of mistaken assignment in the literature, is discussed. In particular, scanning transmission electron microscopy-annular dark field imaging has emerged as the most effective and reliable approach for identifying the different phases in MoS2 and other 2D materials because its images can be directly correlated to the atomic structures. Examples of the identification of polymorphs grown under different conditions in molecular beam epitaxy or chemical vapor deposition, for example, 3R, 1T, 1T'-phases, and 1T'-edges, are presented, including their atomic structures, fascinating properties, growth methods, and corresponding thermodynamic stabilities.
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Affiliation(s)
- Xiaoxu Zhao
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore, 117456, Singapore
| | - Shoucong Ning
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Wei Fu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Stephen J Pennycook
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore, 117456, Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 13 Centre for Life Sciences, #05-01, 28 Medical Drive, Singapore, 117456, Singapore
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9
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Wang Z, Luo M, Ning S, Ito Y, Kashani H, Zhang X, Chen M. One-Dimensional Atomic Segregation at Semiconductor-Metal Interfaces of Polymorphic Transition Metal Dichalcogenide Monolayers. NANO LETTERS 2018; 18:6157-6163. [PMID: 30207733 DOI: 10.1021/acs.nanolett.8b01839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Interface segregation is a powerful approach to tailor properties of bulk materials by interface engineering. Nevertheless, little is known about the chemical inhomogeneity at interfaces of polymorphic two-dimensional transition metal dichalcogenides (TMDs) and its influence on the properties of the 2D materials. Here we report one-dimensional monatomic segregation at coherent semiconductor-metal 1H/1T interfaces of Mo-doped WS2 monolayers. The monatomic interface segregation takes place at an intact transition metal plane and is associated with the topological defects caused by reflection symmetry breaking at the 1T/1H interfaces and the weak difference in bonding strength between Mo-S and W-S. This finding enriches our understanding of the interaction between topological defects and impurities in 2D crystals and enlightens a potential approach to manipulate the properties of 2D TMDs by local chemical modification and interface engineering for applications in 2D TMD electronic devices.
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Affiliation(s)
- Ziqian Wang
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Min Luo
- Department of Physics , Shanghai Second Polytechnic University , Shanghai 201209 , P. R. China
| | - Shoucong Ning
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , 117575 Singapore
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba 305-8573 , Japan
| | - Hamzeh Kashani
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Xuanyi Zhang
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
| | - Mingwei Chen
- Department of Materials Science and Engineering , Johns Hopkins University , Baltimore , Maryland 21218 , United States
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577 , Japan
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10
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Bayer BC, Kaindl R, Reza Ahmadpour Monazam M, Susi T, Kotakoski J, Gupta T, Eder D, Waldhauser W, Meyer JC. Atomic-Scale in Situ Observations of Crystallization and Restructuring Processes in Two-Dimensional MoS 2 Films. ACS NANO 2018; 12:8758-8769. [PMID: 30075065 PMCID: PMC6117750 DOI: 10.1021/acsnano.8b04945] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2018] [Accepted: 08/03/2018] [Indexed: 05/26/2023]
Abstract
We employ atomically resolved and element-specific scanning transmission electron microscopy (STEM) to visualize in situ and at the atomic scale the crystallization and restructuring processes of two-dimensional (2D) molybdenum disulfide (MoS2) films. To this end, we deposit a model heterostructure of thin amorphous MoS2 films onto freestanding graphene membranes used as high-resolution STEM supports. Notably, during STEM imaging the energy input from the scanning electron beam leads to beam-induced crystallization and restructuring of the amorphous MoS2 into crystalline MoS2 domains, thereby emulating widely used elevated temperature MoS2 synthesis and processing conditions. We thereby directly observe nucleation, growth, crystallization, and restructuring events in the evolving MoS2 films in situ and at the atomic scale. Our observations suggest that during MoS2 processing, various MoS2 polymorphs co-evolve in parallel and that these can dynamically transform into each other. We further highlight transitions from in-plane to out-of-plane crystallization of MoS2 layers, give indication of Mo and S diffusion species, and suggest that, in our system and depending on conditions, MoS2 crystallization can be influenced by a weak MoS2/graphene support epitaxy. Our atomic-scale in situ approach thereby visualizes multiple fundamental processes that underlie the varied MoS2 morphologies observed in previous ex situ growth and processing work. Our work introduces a general approach to in situ visualize at the atomic scale the growth and restructuring mechanisms of 2D transition-metal dichalcogenides and other 2D materials.
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Affiliation(s)
- Bernhard C. Bayer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
- Institute
of Materials Chemistry, Vienna University
of Technology (TU Wien), Getreidemarkt 9, A-1060 Vienna, Austria
| | - Reinhard Kaindl
- Joanneum
Research - Materials, Institute of Surface
Technologies and Photonics, Leobner Straße 94, A-8712 Niklasdorf, Austria
| | | | - Toma Susi
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Jani Kotakoski
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
| | - Tushar Gupta
- Institute
of Materials Chemistry, Vienna University
of Technology (TU Wien), Getreidemarkt 9, A-1060 Vienna, Austria
| | - Dominik Eder
- Institute
of Materials Chemistry, Vienna University
of Technology (TU Wien), Getreidemarkt 9, A-1060 Vienna, Austria
| | - Wolfgang Waldhauser
- Joanneum
Research - Materials, Institute of Surface
Technologies and Photonics, Leobner Straße 94, A-8712 Niklasdorf, Austria
| | - Jannik C. Meyer
- Faculty
of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
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11
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Wang Z, Shen Y, Ito Y, Zhang Y, Du J, Fujita T, Hirata A, Tang Z, Chen M. Synthesizing 1T-1H Two-Phase Mo 1-xW xS 2 Monolayers by Chemical Vapor Deposition. ACS NANO 2018; 12:1571-1579. [PMID: 29365263 DOI: 10.1021/acsnano.7b08149] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
1T-1H metal-semiconductor interfaces in two-dimensional (2D) transition-metal dichalcogenides (TMDs) play a crucial role in utilizing the band gaps of TMDs for applications in electronic devices. Although the 1T-1H two-phase structure has been observed in exfoliated 2D nanosheets and chemically or physically treated TMDs, it cannot in principle be achieved in large-scale TMD monolayers grown by chemical vapor deposition (CVD), which is a fabrication method for electronic device applications, because of the metastable nature of the 1T phase. In this study we report CVD growth of 1T-1H two phase TMD monolayers by controlling thermal strains and alloy compositions. It was found that in-plane thermal strains arising from the difference in thermal expansion coefficients between TMD monolayers and substrates can drive the 1H to 1T transition during cooling after CVD growth. Moreover, grain boundaries in the 2D crystals act as the nucleation sites of the 1T phase and the lattice strain perturbations from alloying noticeably promote the formation of the metastable 1T phase. This work has an important implication in tailoring structure and properties of CVD grown 2D TMDs by phase engineering.
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Affiliation(s)
- Ziqian Wang
- Department of Materials Science and Engineering, Johns Hopkins University , Baltimore, Maryland 21218, United States
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
| | - Yuhao Shen
- Key Laboratory of Polar Materials and Devices, East China Normal University , Shanghai 200062, P. R. China
| | - Yoshikazu Ito
- Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba 305-8573, Japan
| | - Yongzheng Zhang
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
| | - Jing Du
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
| | - Takeshi Fujita
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
| | - Akihiko Hirata
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
| | - Zheng Tang
- Key Laboratory of Polar Materials and Devices, East China Normal University , Shanghai 200062, P. R. China
| | - Mingwei Chen
- Department of Materials Science and Engineering, Johns Hopkins University , Baltimore, Maryland 21218, United States
- Advanced Institute for Materials Research, Tohoku University , Sendai 980-8577, Japan
- CREST, JST , 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
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12
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Cai Z, Liu B, Zou X, Cheng HM. Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures. Chem Rev 2018; 118:6091-6133. [PMID: 29384374 DOI: 10.1021/acs.chemrev.7b00536] [Citation(s) in RCA: 440] [Impact Index Per Article: 73.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.
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Affiliation(s)
- Zhengyang Cai
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) , Tsinghua University , Shenzhen , Guangdong 518055 , People's Republic of China.,Shenyang National Laboratory for Materials Sciences, Institute of Metal Research , Chinese Academy of Sciences , Shenyang , Liaoning 110016 , People's Republic of China.,Center of Excellence in Environmental Studies (CEES) , King Abdulaziz University , Jeddah 21589 , Saudi Arabia
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