Abrupt Size Partitioning of Multimodal Photoluminescence Relaxation in Monodisperse Silicon Nanocrystals

Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?

Silicon quantum dots (QDs) are a promising non-toxic alternative to the already well-developed platform of light-emitting semiconductor QDs based on III-V and II-VI materials. Oxidized SiQDs or those surface-terminated with long alkyl chains typically feature long-lived orange-red photoluminescence originating in quantum-confined core states. However, sometimes an additional short-lived PL band, whose mechanism is still highly debated, is reported. Here, we perform a detailed study of the room-temperature PL of SiQDs using samples covering three main fabrication techniques. We find evidence for the presence of only one set of radiative processes in addition to the typical long-lived PL. Moreover, we experimentally determine the ratio between the short- and long-lived PL component, obtaining a wide range of values (0.003 - 0.1) depending on the type of sample. In accordance with an already published report, we observe a tendency of SiQDs with stronger short-lived PL to have lower external quantum yield. We explain this trend using a model of the optical performance of an ensemble of QDs with widely varying optical characteristics through a mechanism we call selective lifetime-based quenching.

Luminescence mechanism in hydrogenated silicon quantum dots with a single oxygen ligand

Though photoluminescence (PL) of Si quantum dots (QDs) has been known for decades and both theoretical and experimental studies have been extensive, their luminescence mechanism has not been elaborated. Several models have been proposed to explain the mechanism. A deep insight into the origin of light emissions in Si QDs is necessary. This work calculated the ground- and excited state properties of hydrogenated Si QDs with various diameters, including full hydrogen passivation, single Si[double bond, length as m-dash]O ligands, single epoxide and coexisting Si[double bond, length as m-dash]O and epoxide structures in order to investigate the dominant contribution states for luminescence. The results revealed that even a single oxygen atom in hydrogenated Si QDs can dramatically change their electronic and optical properties. Intriguingly, we found that a size-independent emission, the strongest among all possible emissions, was induced by the single Si[double bond, length as m-dash]O passivated Si-QDs. In non-oxidized Si-QDs exhibiting a core-related size-tunable emission, the luminescence properties can be modulated by the ligands of Si QDs, and a very small number of oxygen ligands can strongly influence the luminescence of nanocrystalline silicon. Our findings deepen the understanding of the PL mechanism of Si QDs and can further promote the development of silicon-based optoelectronic devices.

Precise size separation of water-soluble red-to-near-infrared-luminescent silicon quantum dots by gel electrophoresis

Gel electrophoresis, which is a standard method for separation and analysis of macromolecules such as DNA, RNA and proteins, is applied for the first time to silicon (Si) quantum dots (QDs) for size separation. In the Si QDs studied, boron (B) and phosphorus (P) are simultaneously doped. Codoping induces a negative potential on the surface of a Si QD and makes it dispersible in water. Si QDs with different B and P concentrations and grown at different temperatures (950 °C-1200 °C) are studied. It is shown that native polyacrylamide gel electrophoresis can separate codoped Si QDs by size. The capability of gel electrophoresis to immobilize size-separated QDs in a solid matrix makes detailed analyses of size-purified Si QDs possible. For example, the photoluminescence (PL) studies of the dried gel of Si QDs grown at 1100 °C demonstrate that a PL spectrum of a Si QD solution with the PL maximum around 1.4 eV can be separated into more than 15 spectra with the PL maximum changing from 1.2 to 1.8 eV depending on the migration distance. It is found that the relationship between the PL peak energy and the migration distance depends on the growth temperature of Si QDs as well as the B and P concentration. For all the samples with different impurity concentrations and grown at different temperatures, a clear trend is observed in the relationship between the full width at half maximum (FWHM) and the peak energy of the PL spectra in a wide energy range. The FWHM increases with the increasing peak energy and it is nearly twice larger than those observed for undoped Si QDs. The large PL FWHM of codoped Si QDs suggests that excitons are further localized in codoped Si QDs due to the existence of charged impurities.

Bright Silicon Nanocrystals from a Liquid Precursor: Quasi-Direct Recombination with High Quantum Yield

Silicon nanocrystals (SiNCs) with bright bandgap photoluminescence (PL) are of current interest for a range of potential applications, from solar windows to biomedical contrast agents. Here, we use the liquid precursor cyclohexasilane (Si₆H₁₂) for the plasma synthesis of colloidal SiNCs with exemplary core emission. Through size separation executed in an oxygen-shielded environment, we achieve PL quantum yields (QYs) approaching 70% while exposing intrinsic constraints on efficient core emission from smaller SiNCs. Time-resolved PL spectra of these fractions in response to femtosecond pulsed excitation reveal a zero-phonon radiative channel that anticorrelates with QY, which we model using advanced computational methods applied to a 2 nm SiNC. Our results offer additional insight into the photophysical interplay of the nanocrystal surface, quasi-direct recombination, and efficient SiNC core PL.

Silicon Quantum Dots: Synthesis, Encapsulation, and Application in Light-Emitting Diodes

Silicon quantum dots (SiQDs) are semiconductor Si nanoparticles ranging from 1 to 10 nm that hold great applicative potential as optoelectronic devices and fluorescent bio-marking agents due to their ability to fluoresce blue and red light. Their biocompatibility compared to conventional toxic Group II-VI and III-V metal-based quantum dots makes their practical utilization even more attractive to prevent environmental pollution and harm to living organisms. This work focuses on their possible use for light-emitting diode (LED) manufacturing. Summarizing the main achievements over the past few years concerning different Si quantum dot synthetic methods, LED formation and characteristics, and strategies for their stabilization by microencapsulation and modification of their surface by specific ligands, this work aims to provide guidance en route to the development of the first stable Si-based light-emitting diodes.

Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures

This review highlights many spectroscopy-based studies and selected phenomenological studies of silicon-based nanostructures that provide insight into their likely PL mechanisms, and also covers six application areas.

Nitrogen-terminated silicon nanoparticles obtained via chemical etching and passivation are specific fluorescent probes for creatinine

A method is described here to prepare water-dispersible nitrogen-functionalized silicon nanoparticles (N-SiNPs). It consists of two steps, viz. etching of the oxidized shell of SiNPs and nitrogen-passivation of the exposed silicon. The resulting N-SiNPs have an average diameter of 2.6±0.7 nm and show blue fluorescence (with excitation/emission peaks at 340/420 nm). The fluorescence quantum yield is 23% and the decay time is in the nanosecond regime. Compared to etching methods using a plasma or hydrofluoric acid, the process described here (etching and passivation) is mild, continuous, fast, and air-compatible. The N-SiNPs modified with chlorotetracycline are shown to be a viable fluorescent probe for creatinine. Fluorescence drops in the 0 to 20 μM creatinine concentration range, and the limit of detection is 0.14 μM.

The influence of conjugated alkynyl(aryl) surface groups on the optical properties of silicon nanocrystals: photoluminescence through in-gap states

Developing new methods, other than size and shape, for controlling the optoelectronic properties of semiconductor nanocrystals is a highly desired target. Here we demonstrate that the photoluminescence (PL) of silicon nanocrystals (SiNCs) can be tuned in the range 685-800 nm solely via surface functionalization with alkynyl(aryl) (phenylacetylene, 2-ethynylnaphthalene, 2-ethynyl-5-hexylthiophene) surface groups. Scanning tunneling microscopy/spectroscopy on single nanocrystals revealed the formation of new in-gap states adjacent to the conduction band edge of the functionalized SiNCs. PL red-shifts were attributed to emission through these in-gap states, which reduce the effective band gap for the electron-hole recombination process. The observed in-gap states can be associated with new interface states formed via (-Si-C≡C-) bonds in combination with conjugated molecules as indicated by ab initio calculations. In contrast to alkynyl(aryl)s, the formation of in-gap states and shifts in PL maximum of the SiNCs were not observed with aryl (phenyl, naphthalene, 2-hexylthiophene) and alkynyl (1-dodecyne) surface groups. These outcomes show that surface functionalization with alkynyl(aryl) molecules is a valuable tool to control the electronic structure and optical properties of SiNCs via tuneable interface states, which may enhance the performance of SiNCs in semiconductor devices.

Unraveling Photodimerization of Cyclohexasilane from Molecular Dynamics Studies

Photoinduced reactions of a pair of cyclohexasilane (CHS) monomers are explored by time-dependent excited-state molecular dynamics (TDESMD) calculations. In TDESMD trajectories, one observes vivid reaction events including dimerization and fragmentation. A general reaction pathway is identified as (i) ring-opening formation of a dimer, (ii) rearrangement induced by bond breaking, and (iii) decomposition through the elimination of small fragments. The identified pathway supports the chemistry proposed for the fabrication of silicon-based materials using CHS as a precursor. In addition, we find dimers have smaller HOMO-LUMO gaps and exhibit a red shift and line-width broadening in the computed photoluminescence spectra compared with a pair of CHS monomers.

Mechanism of Ligand-Controlled Emission in Silicon Nanoparticles

Although bulk silicon (Si) is known to be a poor emitter, Si nanoparticles (NPs) exhibit size-dependent photoluminescence in the red or near-infrared due to quantum confinement. Recently, it has been shown that surface modification of Si NPs with nitrogen-capped ligands results in bluer emission wavelengths and quantum yields of up to 90%. However, the emission mechanism operating in these surface-modified Si NPs and the factors that determine their emission maxima are still unclear. Here, the emission in these species is shown to arise from a charge-transfer state between the Si surface and the ligand. The energy of this state is linearly correlated to the calculated ground-state dipole moment of the free ligand. This trend can be used in a predictive fashion for the design and synthesis of Si NPs with a broader range of emission wavelengths.

Changes of the absorption cross section of Si nanocrystals with temperature and distance

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.

Long-lived luminescence of silicon nanocrystals: from principles to applications

Understanding parameters affecting the luminescence of silicon nanocrystals will guide the design of improved systems for a plethora of applications.