Sizing Up Excitons in Core-Shell Quantum Dots via Shell-Dependent Photoluminescence Blinking

Progress on quantum dot photocatalysts for biomass valorization

Biomass with abundant reproducible carbon resource holds great promise as an intriguing substitute for fossil fuels in the manufacture of high-value-added chemicals and fuels. Photocatalytic biomass valorization using inexhaustible solar energy enables to accurately break desired chemical bonds or selectively functionalize particular groups, thus emerging as an extremely creative and low carbon cost strategy for relieving the dilemma of the global energy. Quantum dots (QDs) are an outstandingly dynamic class of semiconductor photocatalysts because of their unique properties, which have achieved significant successes in various photocatalytic applications including biomass valorization. In this review, the current development rational design for QDs photocatalytic biomass valorization effectively is highlighted, focusing on the principles of tuning their particle size, structure, and surface properties, with special emphasis on the effect of the ligands for selectively broken chemical bonds (C─O, C─C) of biomass. Finally, the present issues and possibilities within that exciting field are described.

Solvent Modulation of Chiral Perovskite Films Enables High Circularly Polarized Luminescence Performance from Chiral Perovskite/Quantum Dot Composites

Materials with circularly polarized luminescence (CPL) activity are promising in many chiroptoelectronics fields, such as for biological probes, asymmetric photosynthesis, information storage, spintronic devices, and so on. Promoting the value of the dissymmetry factor (glum) for the CPL-active materials based on chiral perovskite draws increasing attention since a higher glum value indicates better CPL. In this work, we find that, after being treated with a facile solvent modulation strategy, the chirality of 2D chiral perovskite films has been enhanced a lot, which we attribute to an increased lattice distortion degree. By forming chiral perovskite/quantum dot (QD) composites, the CPL-active material is successfully obtained. The calculated maximum |glum| of these composites increased over 4 times after solvent modulation treatment (1.53 × 10-3 for the pristine sample of R-DMF and 6.91 × 10-3 for R-NMP) at room temperature. Moreover, the enhancement of the CPL intensity is ascribed to two aspects: one is the generation and transportation of spin-polarized charge carriers from chiral perovskite films to combine in the QD layer, and the other is the solvent modulation strategy to enlarge the lattice distortion of chiral perovskite films. This facile route provides an effective way to construct CPL-active materials. More importantly, this kind of composite material (chiral perovskite film/QD layer) can be easily applied for fabricating circularly polarized light-emitting diode devices for electroluminescence.

Self-trapped excitons in soft semiconductors

Self-trapped excitons (STEs) have attracted tremendous attention due to their intriguing properties and potential optoelectronic applications. STEs are formed from the lattice distortion induced by the strong electron (exciton)-phonon coupling in soft semiconductors upon photoexcitation, which features in broadband photoluminescence (PL) emission spectra with a large Stokes shift. Recently, significant progress has been achieved in this field but many remain challenges that need to be solved, including the understanding of the underlying physical mechanism, tuning of the performance, and device applications. Along these lines, for the first time, systematic experimental characterizations and advanced theoretical calculations are presented in this review to shed light on the physical mechanism. The possibility of tuning the STEs through multiple degrees of freedom is also presented, along with an overview of the STE-based emerged applications and future research perspectives.

Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) is a promising host material for room-temperature, tunable solid-state quantum emitters. A key technological challenge is deterministic and scalable spatial emitter localization, both laterally and vertically, while maintaining the full advantages of the 2D nature of the material. Here, we demonstrate emitter localization in hBN in all three dimensions via a monolayer (ML) engineering approach. We establish pretreatment processes for hBN MLs to either fully suppress or activate emission, thereby enabling such differently treated MLs to be used as select building blocks to achieve vertical (z) emitter localization at the atomic layer level. We show that emitter bleaching of ML hBN can be suppressed by sandwiching between two protecting hBN MLs, and that such thin stacks retain opportunities for external control of emission. We exploit this to achieve lateral (x-y) emitter localization via the addition of a patterned graphene mask that quenches fluorescence. Such complete emitter site localization is highly versatile, compatible with planar, scalable processing, allowing tailored approaches to addressable emitter array designs for advanced characterization, monolithic device integration, and photonic circuits.

Sub-Bandgap Optical Modulation of Quantum Dot Blinking Statistics

Colloidal quantum dots (QDs) suffer from pervasive photoluminescence intermittency that frustrates applications and correlates with irreversible photodegradation. In single-QD spectroscopies, blinking manifests as sporadic switching between ON and OFF states without a characteristic time scale, and the longstanding search for mechanisms has been recently accelerated by techniques to controllably modulate the QD environment. Here, we develop an all-optical modulation scheme and demonstrate that sub-bandgap light tuned to the stimulated emission transition perturbs the blinking statistics of individual CdSe/ZnS core/shell QDs. Resonant optical modulation progressively suppresses long-duration ON events, quantified by a power-law slope that is more negative on average (Δα_ON = 0.46 ± 0.09), while OFF distributions and truncation times are unaffected. This characteristic effect is robust to choices in background subtraction and statistical analysis but supports mechanistic descriptions beyond first-order kinetics. This demonstration of all-optical perturbation of QD blinking dynamics provides an experimental avenue to disentangle the complex photophysics of photoluminescence intermittency.

Spectrally Resolved Photodynamics of Individual Emitters in Large-Area Monolayers of Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) is a 2D, wide band gap semiconductor that has recently been shown to display bright room-temperature emission in the visible region, sparking immense interest in the material for use in quantum applications. In this work, we study highly crystalline, single atomic layers of chemical vapor deposition grown h-BN and find predominantly one type of emissive state. Using a multidimensional super-resolution fluorescence microscopy technique we simultaneously measure spatial position, intensity, and spectral properties of the emitters, as they are exposed to continuous wave illumination over minutes. As well as low emitter heterogeneity, we observe inhomogeneous broadening of emitter line-widths and power law dependency in fluorescence intermittency; this is strikingly similar to previous work on quantum dots. These results show that high control over h-BN growth and treatment can produce a narrow distribution of emitter type and that surface interactions heavily influence the photodynamics. Furthermore, we highlight the utility of spectrally resolved wide-field microscopy in the study of optically active excitations in atomically thin two-dimensional materials.

Plasmonic resonance energy transfer from a Au nanosphere to quantum dots at a single particle level and its homogenous immunoassay

PRET from a AuNS to a QD is discovered at a single particle level, and then is used to develop ultra-sensitive homogenous immunoassays.

Blinking Suppression in Highly Excited CdSe/ZnS Quantum Dots by Electron Transfer under Large Positive Gibbs (Free) Energy Change

Semiconductor quantum dots with stable photoluminescence are necessary for next generation optoelectronic and photovoltaic devices. Photoluminescence intensity fluctuations of cadmium and lead chalcogenide quantum dots have been extensively investigated since the first observation of blinking in CdSe nanocrystals in 1996. In a quantum dot, blinking originates from stochastic photocharging, nonradiative Auger recombination, and delayed neutralization. So far, blinking is suppressed by defect passivation, electron transfer, and shell preparation, but without any deep insight into free energy change of electron transfer. We report real-time detection of significant blinking suppression for CdSe/ZnS quantum dots exposed to N, N-dimethylaniline, which is accompanied by a considerable increase in the time-averaged photoluminescence intensity of quantum dots. Although the Gibbs (free) energy change (Δ G_et = +2.24 eV), which is estimated electrochemically and from density functional theory calculations, is unfavorable for electron transfer from N, N-dimethylaniline to a quantum dot in the minimally excited (band-edge) state, electron transfer is obvious when a quantum dot is highly excited. Nonetheless, Δ G_et crosses from the positive to negative scale as the solvent dielectric constant exceeds 5, favoring electron transfer from N, N-dimethylaniline to a quantum dot excited to the band-edge state. Based on single-molecule photoluminescence and ensemble electron transfer studies, we assign blinking suppression to the transfer of an electron from N, N-dimethylaniline to the hot hole state of a quantum dot. In addition to blinking suppression by electron transfer, complete removal of blinking is limited by short-living OFF states induced by the negative trion.