Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures

Narrowband Solar-Blind Photodetection of the Plasmonic (In0.3Ga0.7)2O3 Detector via the Synergetic Enhancement of Small-Sized Ag-Nanoparticle Photoabsorbance and Surface Modification

Currently, research on Ag nanoparticles (AgNPs) predominantly focuses on UV/visible photodetection and UV emission, seemingly overlooking the significance of Ag in enhancing deep ultraviolet photon detection. In this work, (In0.3Ga0.7)2O3 thin films were fabricated by plasma-enhanced chemical vapor deposition. Due to the unique photoabsorbance characteristic and better interaction with photons of small-sized AgNPs, they effectively suppress the UVB absorbance caused by energy band engineering in the (In0.3Ga0.7)2O3 thin film while enhancing photoabsorbance in UVC due to the surface plasmon effect. Therefore, under the synergistic effect of enhanced photon absorbance and hot electron transfer, the performance of the detector is significantly improved, and its responsivity (R), external quantum efficiency, and detectivity (D*) are 193 mA/W, approximately 100%, and 1014 Jones, respectively, at a bias of -6 V. The fast response time and decay time are 634.6 and 194.1 ms, respectively; the rapid decay facilitated by AgNPs is attributed to the increased indirect recombination rate. AgNPs exhibit excellent narrowband response characteristics and absorbance properties in specific wavelength bands for the InGaO photodetector. This research lays the foundation for the practical application of localized surface plasmon resonance-enhanced photon-sensing capabilities.

Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures

Light emitting diodes represent a key technology that can be found in many areas of everydays life. Therefore, the improvement of the efficiency of such structures offers a high economic and ecological potential. One approach is electrostatic screening of the quantum-confined Stark effect (QCSE) in polar III-V heterostructures by n-type doping in order to increase the oscillator strength of electronic transitions in quantum structures. In this study, we analyzed the cathodoluminescene (CL) spectra of different functional parts of individual AlN/GaN nanowire superlattices and studied their decay characteristics with sub-nanosecond time resolution. This allows us to extract information about strain and electric fields in such heterostructures with an overall spatial resolution <100 nm. The samples, which were investigated in a temperature range from 10 to 300 K by using time-integrated cathodoluminescence spectroscopy (TICL) and time-resolved cathodoluminescence spectroscopy (TRCL) consist of GaN bottom and top layer and a 40-fold stack of GaN nanodiscs, embedded in AlN barriers that were doped with Ge. We show, that the QCSE is reduced with increasing doping concentration due to a screening of the internal electric fields inside GaN nanodiscs, resulting in a reduction of the carrier lifetimes and a blue shift of the emitted light. Due to the small diameter of the electron excitation beam CL offers the possibility to individually analyze the different functional parts of the nanowires.

4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection

4D-scanning transmission electron microscopy (4D-STEM) can be used to measure electric fields such as atomic fields or polarization-induced electric fields in crystal heterostructures. The paper focuses on effects occurring in 4D-STEM at interfaces, where two model systems are used: an AlN/GaN nanowire superlattice as well as a GaN/vacuum interface. Two different methods are applied: First, we employ the centre-of mass (COM) technique which uses the average momentum transfer evaluated from the intensity distribution in the diffraction pattern. Second, we measure the shift of the undiffracted disc (disc-detection method) in nano-beam electron diffraction (NBED). Both methods are applied to experimental and simulated 4D-STEM data sets. We find for both techniques distinct variations in the momentum transfer at interfaces between materials: In both model systems, peaks occur at the interfaces and we investigate possible sources and routes of interpretation. In case of the AlN/GaN superlattice, the COM and disc-detection methods are used to measure internal polarization-induced electric fields and we observed a reduction of the measured fields with increasing specimen thickness.

High-Performance Piezo-Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

III-nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo-phototronic effect on near-infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure-dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo-phototronic effect. This study paves avenue for designing high-performance near-infrared piezo-phototronic devices based on intersubband transition.

Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters

Quantum dots inserted in semiconducting nanowires are an interesting platform for the fabrication of single photon devices. To fully understand the physical properties of these objects, we need to correlate the optical, transport, and structural properties on the same nanostructure. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si₃N₄ membranes, so that transmission electron microscopy observations, photocurrent, and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modeling of the exact heterostructure provide a good description of the experimental observations. When the bias-induced band bending is strong enough to favor tunneling of the electron in the dot toward the stem or the cap, the spectral shift saturates and additional transitions associated with charged excitons can be observed.

Electrical Polarization in AlN/GaN Nanodisks Measured by Momentum-Resolved 4D Scanning Transmission Electron Microscopy

We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3±1.5  MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications.

One-step synthesis of nail-like Mn-doped CdS/CdBr2 hetero-nanostructures for potential lasing application

Nanoscale heterostructures, which incorporate two or more materials such as core-shell nanocrystals, core-crown nanoplates, or seeded nanorods, allow better control of the optical, electrical and magnetic properties that are inaccessible in single component nanostructure, yet their variety and controlled growth are still challenging. Here, a nail-like Mn-doped CdS/CdBr₂ hetero-nanostructure, which has a hexagonal plate on top of a nanowire, is firstly fabricated by a simple one-step thermal evaporation process. According to the characterization results, its growth mechanism could be obtained, in which the manganese bromide precursor plays a critical role in the formation of such nail morphology. The amplified spontaneous emission of the 'nanonail' is achieved at a low threshold at room temperature, which come from the local and dense exciton scattering due to their interactions excited by fs pulse. These interesting nail-like heterostructures may provide promising templates for constructing high-performance optoelectronic devices.

A universal and controllable strategy of constructing transition-metal nitride heterostructures for highly enhanced bifunctional electrocatalysis

A family of transition-metal nitride heterostructures were synthesized by a universal and controllable method to remedy the drawbacks of ordinary bifunctional electrocatalysts.