1
|
Sang L, Liao M, Sumiya M, Yang X, Shen B. High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications. FUNDAMENTAL RESEARCH 2023; 3:403-408. [PMID: 38933765 PMCID: PMC11197494 DOI: 10.1016/j.fmre.2021.11.024] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 11/02/2021] [Accepted: 11/21/2021] [Indexed: 11/22/2022] Open
Abstract
The highly efficient photovoltaic cells require the In-rich InGaN film with a thickness more than 300 nm to achieve the effective photo⋅electricity energy conversion. However, the InGaN thick films suffer from poor crystalline quality and phase separations by using the conventional low-pressure metal organic chemical vapor deposition (MOCVD). We report on the growth of 0.3-1 μm-thick InGaN films with a specially designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms. The In incorporation is found to be greatly enhanced at the elevated pressures although the growth temperatures are the same. The phase separations are inhibited when the growth pressure is higher than atmospheric pressure, leading to the improved crystalline quality and better surface morphologies especially for the In-rich InGaN. The In0.4Ga0.6N with the thickness of 300 nm is further demonstrated as the active region of solar cells, and the widest photoresponse range from ultraviolet to more than 750 nm is achieved.
Collapse
Affiliation(s)
- Liwen Sang
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- JST-PRESTO, The Japan Science and Technology Agency, Tokyo 102-0076, Japan
| | - Meiyong Liao
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Masatomo Sumiya
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Xuelin Yang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China
| |
Collapse
|
2
|
Interaction between Electromechanical Fields and Carriers in a Multilayered Piezoelectric Semiconductor Beam. MICROMACHINES 2022; 13:mi13060857. [PMID: 35744471 PMCID: PMC9229770 DOI: 10.3390/mi13060857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 05/23/2022] [Accepted: 05/27/2022] [Indexed: 02/04/2023]
Abstract
This study discusses the interaction between electromechanical fields and carriers in a multilayered ZnO beam where the c-axis of every two adjacent layers is alternately opposite along the thickness direction. A multi-field coupling model is proposed from the Timoshenko beam theory together with the phenomenological theory of piezoelectric semiconductors, including Gauss’s law and the continuity equation of currents. The analytical solutions are obtained for a bent beam with different numbers of layers. Numerical results show that polarized charges occur at the interfaces between every two adjacent layers due to the opposite electromechanical coupling effects. It was found that a series of alternating potential-barrier/well structures are induced by the polarized charges, which can be used to forbid the passing of low-energy mobile charges. Moreover, it was also observed that the induced polarized charges could weaken the shielding effect of carrier redistribution. These results are useful for the design of piezotronic devices.
Collapse
|
3
|
Zhou S, Wan Z, Lei Y, Tang B, Tao G, Du P, Zhao X. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes. OPTICS LETTERS 2022; 47:1291-1294. [PMID: 35230348 DOI: 10.1364/ol.452477] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 02/15/2022] [Indexed: 06/14/2023]
Abstract
High-efficiency GaN-based green LEDs are of paramount importance to the development of the monolithic integration of multicolor emitters and full-color high-resolution displays. Here, the InGaN quantum well with gradually varying indium (In) content was proposed for improving the performance of GaN-based green LEDs. The InGaN quantum well with gradually varying In content not only alleviates the quantum-confined Stark effect (QCSE), but also yields a low Auger recombination rate. Consequently, the gradual In content green LEDs exhibited increased light output power (LOP) and reduced efficiency droop as compared to constant In content green LEDs. At 60 A/cm2, the LOPs of the constant In content green LEDs and the gradual In content green LEDs were 33.9 mW and 55.2 mW, respectively. At 150 A/cm2, the efficiency droops for the constant In content green LEDs and the gradual In content green LEDs were 61% and 37.6%, respectively. This work demonstrates the potential for the gradual In content InGaN to replace constant In content InGaN as quantum wells in LED devices in a technologically and commercially effective manner.
Collapse
|
4
|
Sha W, Hua Q, Wang J, Cong Z, Cui X, Ji K, Dai X, Wang B, Guo W, Hu W. Enhanced Photoluminescence of Flexible InGaN/GaN Multiple Quantum Wells on Fabric by Piezo-Phototronic Effect. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3000-3007. [PMID: 34990111 DOI: 10.1021/acsami.1c12835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Fabric-based wearable electronics are showing advantages in emerging applications in wearable devices, Internet of everything, and artificial intelligence. Compared to the one with organic materials, devices based on inorganic semiconductors (e.g., GaN) commonly show advantages of superior characteristics and high stability. Upon the transfer of GaN-based heterogeneous films from their rigid substrates onto flexible/fabric substrates, changes in strain would influence the device performance. Here, we demonstrate the transfer of InGaN/GaN multiple quantum well (MQW) films onto flexible/fabric substrates with an effective lift-off technique. The physical properties of the InGaN/GaN MQWs film are characterized by atomic force microscopy and high-resolution X-ray diffraction, indicating that the transferred film does not suffer from huge damage. Excellent flexible properties are observed in the film transferred on fabric, and the photoluminescence (PL) intensity is enhanced by the piezo-phototronic effect, which shows an increase of about 10% by applying an external strain with increasing the film curvature to 6.25 mm-1. Moreover, energy band diagrams of the GaN/InGaN/GaN heterojunction at different strains are illustrated to clarify the internal modulation mechanism by the piezo-phototronic effect. This work would facilitate the guidance of constructing high-performance devices on fabrics and also push forward the rapid development of flexible and wearable electronics.
Collapse
Affiliation(s)
- Wei Sha
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Qilin Hua
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jiangwen Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zifeng Cong
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xiao Cui
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Keyu Ji
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
| | - Xinhuan Dai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Bingjun Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
| | - Wenbin Guo
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Weiguo Hu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
| |
Collapse
|
5
|
Zheng S, Tang J, Lv D, Wang M, Yang X, Hou C, Yi B, Lu G, Hao R, Wang M, Wang Y, He H, Yao X. Continuous Energy Harvesting from Ubiquitous Humidity Gradients using Liquid-Infused Nanofluidics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106410. [PMID: 34715720 DOI: 10.1002/adma.202106410] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 10/19/2021] [Indexed: 05/24/2023]
Abstract
Humidity-based power generation that converts internal energy of water molecules into electricity is an emerging approach for harvesting clean energy from nature. Here it is proposed that intrinsic gradient within a humidity field near sweating surfaces, such as rivers, soil, or animal skin, is a promising power resource when integrated with liquid-infused nanofluidics. Specifically, capillary-stabilized ionic liquid (IL, Omim+ Cl- ) film is exposed to the above humidity field to create a sustained transmembrane water-content difference, which enables asymmetric ion-diffusion across the nanoconfined fluidics, facilitating long-term electricity generation with the power density of ≈12.11 µW cm-2 . This high record is attributed to the nanoconfined IL that integrates van der Waals and electrostatic interactions to block movement of Omim+ clusters while allowing for directional diffusion of moisture-liberated Cl+ . This humidity gradient triggers large ion-diffusion flux for power generation indicates great potential of sweating surfaces considering that most of the earth is covered by water or soil.
Collapse
Affiliation(s)
- Shuang Zheng
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| | - Jiayue Tang
- Department of Chemistry, Hong Kong University of Science and Technology, Hong Kong, China
| | - Dong Lv
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| | - Mi Wang
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuan Yang
- Beihang University, Beijing, 100191, China
| | - Changshun Hou
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| | - Bo Yi
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| | - Gang Lu
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| | - Ruiran Hao
- School of environmental engineering, Yellow River Conservancy Technical Institute, Kaifeng, 475004, China
| | - Mingzhan Wang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Yanlei Wang
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hongyan He
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xi Yao
- Department of Biomedical Sciences, City University of Hong Kong, Hong Kong, China
| |
Collapse
|
6
|
Dai B, Biesold GM, Zhang M, Zou H, Ding Y, Wang ZL, Lin Z. Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes. Chem Soc Rev 2021; 50:13646-13691. [PMID: 34821246 DOI: 10.1039/d1cs00506e] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.
Collapse
Affiliation(s)
- Baoying Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Haiyang Zou
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Yong Ding
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| |
Collapse
|
7
|
Guo Q, Li D, Hua Q, Ji K, Sun W, Hu W, Wang ZL. Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect. NANO LETTERS 2021; 21:4062-4070. [PMID: 33885320 DOI: 10.1021/acs.nanolett.1c00999] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As a new generation of light sources, GaN-based light-emitting diodes (LEDs) have wide applications in lighting and display. Heat dissipation in LEDs is a fundamental issue that leads to a decrease in light output, a shortened lifespan, and the risk of catastrophic failure. Here, the temperature spatial distribution of the LEDs is revealed by using high-resolution infrared thermography, and the piezo-phototronic effect is proved to restrain efficaciously the temperature increment for the first time. We observe the temperature field and current density distribution of the LED array under external strain compensation. Specifically, the temperature rise caused by the self-heating effect is reduced by 47.62% under 0.1% external strain, which is attributed to the enhanced competitiveness of radiative recombination against nonradiative recombination due to the piezo-phototronic effect. This work not only deepens the understanding of the piezo-phototronic effect in LEDs but also provides a novel, easy-to-implement, and economical method to effectively enhance thermal management.
Collapse
Affiliation(s)
- Qi Guo
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P.R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Ding Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Qilin Hua
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Keyu Ji
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P.R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Wenhong Sun
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Weiguo Hu
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P.R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhong Lin Wang
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004, P.R. China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 101400, P.R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| |
Collapse
|
8
|
Gao X, Jia B, Ye Z, Wang L, Fu K, Liu P, Hu F, Zhu H, Wang Y. Simultaneous transmission, detection, and energy harvesting. OPTICS LETTERS 2021; 46:2075-2078. [PMID: 33929422 DOI: 10.1364/ol.423496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Accepted: 03/27/2021] [Indexed: 06/12/2023]
Abstract
Due to the electro-optic property of InGaN multiple quantum wells, a III-nitride diode can provide light transmission, photo detection, and energy harvesting under different bias conditions. Made of III-nitride diodes arrayed in a single chip, the combination allows the diodes to transmit, detect, and harvest visible light at the same time. Here, we monolithically integrate a III-nitride transmitter, receiver, and energy harvester using a compatible foundry process. By adopting a bottom SiO2/TiO2 distributed Bragg reflector, we present a III-nitride diode with a peak external quantum efficiency of 50.65% at a forward voltage of 2.6 V for light emission, a power conversion efficiency of 6.68% for energy harvesting, and a peak external quantum efficiency of 50.9% at a wavelength of 388 nm for photon detection. The energy harvester generates electricity from ambient light to directly turn the transmitter on. By integrating a circuit, the electrical signals generated by the receiver pulse the emitted light to relay information. The multifunctioning system can continuously operate without an external power supply. Our work opens up a promising approach to develop multicomponent systems with new interactive functions and multitasking devices, due to III-nitride diode arrays that can simultaneously transmit, detect, and harvest light.
Collapse
|
9
|
Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate. CRYSTALS 2020. [DOI: 10.3390/cryst10070621] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Fabricating GaN-based light-emitting diodes (LEDs) on a silicon (Si) substrate, which is compatible with the widely employed complementary metal–oxide–semiconductor (CMOS) circuits, is extremely important for next-generation high-performance electroluminescence devices. We conducted a systematic investigation of the optical properties of vertical LEDs, to reveal the impacts of the manufacturing process on their optical characteristics. Here, we fabricated and characterized high-efficiency GaN-based LEDs with integrated surface textures including micro-scale periodic hemispherical dimples and nano-scale random hexagonal pyramids on a 4 inch p-type Si substrate. The highly reflective Ag/TiW metallization scheme was performed to decrease downward-absorbing light. We demonstrated the influence of transferring LED epilayers from a sapphire substrate onto the Si substrate on the emission characteristics of the vertical LEDs. The removal of the sapphire substrate reduced the adverse impacts of the quantum-confined Stark effect (QCSE). The influence of integrated surface textures on the light extraction efficiency (LEE) of the vertical LEDs was studied. With the injection current of 350 mA, vertical LEDs with integrated surface textures demonstrated an excellent light output power of 468.9 mW with an emission peak wavelength of 456 nm. This work contributes to the integration of GaN-based vertical LEDs into Si-based integrated circuits.
Collapse
|
10
|
Effect of the Uniaxial Compression on the GaAs Nanowire Solar Cell. MICROMACHINES 2020; 11:mi11060581. [PMID: 32532075 PMCID: PMC7345117 DOI: 10.3390/mi11060581] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/27/2020] [Revised: 06/05/2020] [Accepted: 06/08/2020] [Indexed: 11/16/2022]
Abstract
Research regarding ways to increase solar cell efficiency is in high demand. Mechanical deformation of a nanowire (NW) solar cell can improve its efficiency. Here, the effect of uniaxial compression on GaAs nanowire solar cells was studied via conductive atomic force microscopy (C-AFM) supported by numerical simulation. C-AFM I–V curves were measured for wurtzite p-GaAs NW grown on p-Si substrate. Numerical simulations were performed considering piezoresistance and piezoelectric effects. Solar cell efficiency reduction of 50% under a −0.5% strain was observed. The analysis demonstrated the presence of an additional fixed electrical charge at the NW/substrate interface, which was induced due to mismatch between the crystal lattices, thereby affecting the efficiency. Additionally, numerical simulations regarding the p-n GaAs NW solar cell under uniaxial compression were performed, showing that solar efficiency could be controlled by mechanical deformation and configuration of the wurtzite and zinc blende p-n segments in the NW. The relative solar efficiency was shown to be increased by 6.3% under −0.75% uniaxial compression. These findings demonstrate a way to increase efficiency of GaAs NW-based solar cells via uniaxial mechanical compression.
Collapse
|
11
|
Probing the energy conversion process in piezoelectric-driven electrochemical self-charging supercapacitor power cell using piezoelectrochemical spectroscopy. Nat Commun 2020; 11:2351. [PMID: 32393749 PMCID: PMC7214414 DOI: 10.1038/s41467-020-15808-6] [Citation(s) in RCA: 50] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Accepted: 03/18/2020] [Indexed: 11/08/2022] Open
Abstract
The design and development of self-charging supercapacitor power cells are rapidly gaining interest due to their ability to convert and store energy in an integrated device. Here, we have demonstrated the fabrication of a self-charging supercapacitor using siloxene sheets as electrodes and siloxene-based polymeric piezofiber separator immobilized with an ionogel electrolyte. The self-charging properties of the fabricated device subjected to various levels of compressive forces showed their ability to self-charge up to a maximum of 207 mV. The mechanism of self-charging process in the fabricated device is discussed via "piezoelectrochemical effect" with the aid of piezoelectrochemical spectroscopy measurements. These studies revealed the direct evidence of the piezoelectrochemical phenomenon involved in the energy conversion and storage process in the fabricated device. This study can provide insight towards understanding the energy conversion process in self-charging supercapacitors, which is of significance considering the state of the art of piezoelectric driven self-charging supercapacitors.
Collapse
|
12
|
Yu J, Wang L, Hao Z, Luo Y, Sun C, Wang J, Han Y, Xiong B, Li H. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903407. [PMID: 31486182 DOI: 10.1002/adma.201903407] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2019] [Revised: 07/07/2019] [Indexed: 06/10/2023]
Abstract
III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp2 -bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.
Collapse
Affiliation(s)
- Jiadong Yu
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Lai Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Zhibiao Hao
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yi Luo
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Changzheng Sun
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Jian Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yanjun Han
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Bing Xiong
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Hongtao Li
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
13
|
Strain-controlled power devices as inspired by human reflex. Nat Commun 2020; 11:326. [PMID: 31949147 PMCID: PMC6965117 DOI: 10.1038/s41467-019-14234-7] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2019] [Accepted: 12/16/2019] [Indexed: 12/03/2022] Open
Abstract
Bioinspired electronics are rapidly promoting advances in artificial intelligence. Emerging AI applications, e.g., autopilot and robotics, increasingly spur the development of power devices with new forms. Here, we present a strain-controlled power device that can directly modulate the output power responses to external strain at a rapid speed, as inspired by human reflex. By using the cantilever-structured AlGaN/AlN/GaN-based high electron mobility transistor, the device can control significant output power modulation (2.30–2.72 × 103 W cm−2) with weak mechanical stimuli (0–16 mN) at a gate bias of 1 V. We further demonstrate the acceleration-feedback-controlled power application, and prove that the output power can be effectively adjusted at real-time in response to acceleration changes, i.e., ▵P of 72.78–132.89 W cm−2 at an acceleration of 1–5 G at a supply voltage of 15 V. Looking forward, the device will have great significance in a wide range of AI applications, including autopilot, robotics, and human-machine interfaces. Designing intelligent power devices that can directly control the output power modulation responses to external stimuli at a rapid speed remains a challenge. Here, the authors report a strain-controlled power device by using the cantilever-structured AlGaN/AlN/GaN HEMT to emulate human reflex process.
Collapse
|
14
|
Zhu J, Zhou X, Jing L, Hua Q, Hu W, Wang ZL. Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors. ACS NANO 2019; 13:13161-13168. [PMID: 31633906 DOI: 10.1021/acsnano.9b05999] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Flexible electronic technology has attracted great attention due to its wide range of potential applications in the fields of healthcare, robotics, and artificial intelligence, etc. In this work, we have successfully fabricated flexible AlGaN/GaN high-electron-mobility transistors (HEMTs) arrays through a low-damage and wafer-scale substrate transfer technology from a rigid Si substrate. The flexible AlGaN/GaN HEMTs have excellent electrical performances with the Id,max achieving 290 mA/mm at Vgs = +2 V and the gm,max reaching to 40 mS/mm. The piezotronic effect provides a different freedom to optimize device performances, and flexible HEMTs can endure the larger mechanical distortions. Based on the piezotronic effect, we applied an external stress to significantly modulate the electrical performances of flexible HEMTs. The piezotronic effect modulated flexible AlGaN/GaN HEMTs exhibit great potential in human-machine interface, intelligent microinductor systems, and active sensors, etc, and introduce an opportunity to sensing or feedback external mechanical stimuli and so on.
Collapse
Affiliation(s)
- Jiyuan Zhu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Xingyu Zhou
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Liang Jing
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Qilin Hua
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China
| | - Weiguo Hu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China
- School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332-0245 , United States
| |
Collapse
|
15
|
Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
Collapse
Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| |
Collapse
|
16
|
Cho Y, Pak S, An G, Hou B, Cha S. Quantum Dots for Hybrid Energy Harvesting: From Integration to Piezo‐Phototronics. Isr J Chem 2019. [DOI: 10.1002/ijch.201900035] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Yuljae Cho
- Department of Engineering ScienceUniversity of Oxford Parks Road Oxford OX1 3PJ United Kingdom
- Department of EngineeringUniversity of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA United Kingdom
| | - Sangyeon Pak
- Department of PhysicsSungkyunkwan University Suwon Republic of Korea
| | - Geon‐Hyoung An
- Department of Energy EngineeringGyeongnam National University of Science and Technology Jinju-si, Geyongsangnam-do 52725 Republic of Korea
| | - Bo Hou
- Department of EngineeringUniversity of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA United Kingdom
| | - SeungNam Cha
- Department of PhysicsSungkyunkwan University Suwon Republic of Korea
| |
Collapse
|
17
|
Development of a Tree-Shaped Hybrid Nanogenerator Using Flexible Sheets of Photovoltaic and Piezoelectric Films. ENERGIES 2019. [DOI: 10.3390/en12020229] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
This paper reports on the feasibility of a tree-shaped hybrid nanogenerator (TSHG) made of flexible sheets of photovoltaic (PV) and piezoelectric (piezo) films for harnessing both wind and solar energy. The proposed system has been designed to produce electricity if there is any light, wind or strong rainfall. It shows how the power developed by each piezo film sheet was integrated in conjunction with its limited power output which is produced by the sporadic movement of the sheets. Regardless of its magnitude, the AC power output of each piezo film sheet was converted with a full wave bridge rectifier and then passed to a capacitor. The TSHG has an excellent performance with an open circuit voltage of 5.071 V, a short-circuit current of 1.282 mA, and a maximum power output of 3.42 mW at a loading resistance of 5 kΩ. Moreover, a wind driven TSHG was capable of charging a 1000 µF capacitor, which was subsequently discharged through LED lighting.
Collapse
|